RA30H4452M MITSUBISHI RF MOSFET MODULE 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MHz 30W 12.

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1 MITSUBISHI RF MOSFET MODULE RA3H5M -5MHz 3W 1.5V MOBILE RADIO DESCRIPTION The RA3H5M is a 3-watt RF MOSFET Amplifier Module for 1.5-volt mobile radios that operate in the - to 5-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage ( =V), only a small leakage current flows into the drain and the RF input signal attenuates up to db. The output power and drain current increase as the gate voltage increases. With a gate voltage around V (minimum), output power and drain current increases substantially. The nominal output power becomes available at.5v (typical) and 5V (maximum). At, the typical gate current is 1 ma. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES Enhancement-Mode MOSFET Transistors =1.5V, =V) >3W, η T =1.5V,, P in =5mW Broadband Frequency Range: -5MHz Low-Power Control Current I GG =1mA (typ) at x 1 x 9. mm Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power BLOCK DIAGRAM RF Input (P in) Gate Voltage (), Power Control 3 Drain Voltage (), Battery RF Output () 5 RF Ground (Case) 5 ORDERING INFORMATION: ORDER NUMBER RA3H5M-E1 RA3H5M-1 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 1 modules/tray RA3H5M MITSUBISHI ELECTRIC Dec 1/9

2 RA3H5M MAXIMUM RATINGS (T case=+5 C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT Drain Voltage <5V 17 V Gate Voltage <1.5V, P in=mw V P in Input Power f=-5mhz, 1 mw Output Power Z G=Z L=5Ω 5 W T case(op) Operation Case Temperature Range -3 to +11 C T stg Storage Temperature Range - to +11 C Above Parameters are guaranteed independently ELECTRICAL CHARACTERISTICS (T case=+5 C, Z G=Z L=5Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 5 MHz Output Power 3 W η T Total Efficiency =1.5V, % f o nd Harmonic, -5 dbc ρ in Input VSWR P in=5mw 3:1 I GG Gate Current Stability Load VSWR Tolerance =1.-15.V, P in=5-7mw, <W ( control), Load VSWR=3:1 =15.V, P in=5mw, =3W ( control), Load VSWR=:1 1 ma No parasitic oscillation No degradation or destroy All Parameters, Conditions, Ratings and Limits are subject to change without notice RA3H5M MITSUBISHI ELECTRIC Dec /9

3 RA3H5M TYPICAL PERFORMANCE (T case=+5 C, Z G=Z L=5Ω, unless otherwise specified) INPUT VSWR ρin (-) OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY ρ in η T =1.5V P in =5mW FREQUENCY f(mhz) 1 TOTAL EFFICIENCY ηt(%) HARMONICS (dbc) nd, 3 rd HARMONICS versus FREQUENCY =1.5V P in =5mW nd 3 rd FREQUENCY f(mhz) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER Gp INPUT POWER P in (dbm) f=mhz, =1.5V, 1 1 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER Gp INPUT POWER P in (dbm) f=7mhz, =1.5V, 1 1 DRAIN CURRENT IDD(A) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 1 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 1 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) Gp f=9mhz, =1.5V, 1 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) Gp f=5mhz, =1.5V, 1 DRAIN CURRENT IDD(A) INPUT POWER P in (dbm) INPUT POWER P in (dbm) versus DRAIN VOLTAGE f=mhz, =1.5V, DRAIN CURRENT (A) versus DRAIN VOLTAGE f=7mhz, =1.5V, DRAIN CURRENT (A) DRAIN VOLTAGE (V) DRAIN VOLTAGE (V) RA3H5M MITSUBISHI ELECTRIC Dec 3/9

4 RA3H5M TYPICAL PERFORMANCE (T case=+5 C, Z G=Z L=5Ω, unless otherwise specified) versus DRAIN VOLTAGE 9 1 f=9mhz, 1 7 =1.5V, DRAIN VOLTAGE (V) DRAIN CURRENT (A) OUTPUT POWER (W) versus DRAIN VOLTAGE 9 1 f=5mhz, 1 =1.5V, DRAIN VOLTAGE (V) DRAIN CURRENT (A) versus GATE VOLTAGE f=mhz, =1.5V, GATE VOLTAGE (V) 1 DRAIN CURRENT (A) versus GATE VOLTAGE f=7mhz, =1.5V, GATE VOLTAGE (V) 1 DRAIN CURRENT (A) versus GATE VOLTAGE f=9mhz, =1.5V, GATE VOLTAGE (V) 1 DRAIN CURRENT (A) versus GATE VOLTAGE f=5mhz, =1.5V, GATE VOLTAGE (V) 1 DRAIN CURRENT (A) RA3H5M MITSUBISHI ELECTRIC Dec /9

5 RA3H5M OUTLINE DRAWING (mm). ±.5 3. ± ±.. ± ±.5 -R ±.5 1. ±1 1. ± ±.5. ± Ø.5 ±.15. ± ±.5 1. ±1 1.5 ±1 3.5 ± ± /-..9 ±. 7.5 ±.5.3 ±.3 (9.) (5.) 1 RF Input (P in ) Gate Voltage ( ) 3 Drain Voltage ( ) RF Output ( ) 5 RF Ground (Case) RA3H5M MITSUBISHI ELECTRIC Dec 5/9

6 RA3H5M TEST BLOCK DIAGRAM Power Meter DUT 5 Spectrum Analyzer 1 3 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler Z G=5Ω Z L=5Ω Directional Coupler Attenuator Power Meter C1 C C1, C: 7pF, uf in parallel - + DC Power Supply + - DC Power Supply 1 RF Input (P in ) Gate Voltage ( ) 3 Drain Voltage ( ) RF Output ( ) 5 RF Ground (Case) EQUIVALENT CIRCUIT RA3H5M MITSUBISHI ELECTRIC Dec /9

7 RA3H5M PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is attached. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection. Following conditions shall be avoided: a) Bending forces on the alumina substrate (for example during srewing or by fast thermal changes) b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion) c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichlorethylene) d) Frequent on/off switching causing thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc. ESD: This MOSFET module is sensitive to ESD voltages down to 1V. Appropriate ESD precautions are required. Mounting: The heat sink flatness shall be less than 5µm (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB. M3 screws are recommended with tightening torque. to.nm. Soldering and Defluxing: This module is designed for manual soldering. The leads shall be soldered after the module is screwed onto the heat sink. The soldering temperature shall be lower than C for maximum 1 seconds, or lower than 35 C for maximum 3 seconds. Ethyl Alcohol is recommend to remove flux. Trichlorethylene type solvents must not be used (they may cause bubbles in the coating of the transistor chips, which can lift off bond wires). Thermal Design of the Heat Sink: At =3W, =1.5V and P in =5mW each stage transistor operating conditions are: Stage P in R η T=% (W) (W) ( C/W) (A) (V) 1 st nd rd The channel temperatures of each stage transistor T ch = T case + ( x - + P in ) x R th(ch-case) are: T ch1 = T case + (1.5V x.3a - 1.5W +.5W) x 5. C/W = T case C T ch = T case + (1.5V x 1.5A - 9.W + 1.5W) x. C/W = T case + 7. C T ch3 = T case + (1.5V x.a - 3.W + 9.W) x 1. C/W = T case C For long term reliability the module case temperature T case is better kept below 9 C. For an ambient temperature T air = C and =3W the required thermal resistance R th (case-air) = ( T case - T air ) / ( ( / η T ) - + P in ) of the heat sink, including the contact resistance, is: R th(case-air) = (9 C - C) / (3W/% 3W +.5W) =.7 C/W When mounting the module with the thermal resistance of.7 C/W, the channel temperature of each stage transistor is: T ch1 = T air C T ch = T air C T ch3 = T air + 7. C 175 C maximum rating for the channel temperature ensures application under derated conditions. RA3H5M MITSUBISHI ELECTRIC Dec 7/9

8 RA3H5M Output Power Control: Depending on linearity following methods are recommended to control the output power: a) Non-linear FM modulation: By Gate voltage. When the Gate voltage is close to zero, the RF input signal is attenuated up to db and only a small leakage current is flowing from the battery into the Drain. Around =3.5V the output power and Drain current increases strongly. Around =V, latest at, the nominal output power becomes available. b) Linear AM modulation: By RF input power P in. The Gate voltage is used to set the Drain quiescent current for the required linearity. Oscillation: To test RF characteristic this module is put on a fixture with bias decoupling capacitors each on Gate and Drain, a.7pf chip capacitor, located close to the module, and a µf (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance Z L =5Ω? c) Is the source impedance Z G =5Ω? Frequent on/off switching: In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time thermally induced mechanical stress. Quality: MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating conditions exceeding those in Mobile Radios. The technology of this module is the result of more than years experience, field proven in several 1 million Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which are caused by handling or operating conditions. Few degradation failures can be found. Keep safety first in your circuit Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RA3H5M MITSUBISHI ELECTRIC Dec /9

MITSUBISHI RF MOSFET MODULE RA30H1317M

MITSUBISHI RF MOSFET MODULE RA3H1317M RoHS Compliance, 135-175MHz 3W 1.5V Stage Amp. For MOBILE RADIO DESCRIPTION The RA3H1317M is a 3-watt RF MOSFET Amplifier Module for 1.5-volt mobile radios that operate