RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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1 RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W DESCRIPTION RD7MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.+/-.1.6+/-. 1 FEATURES High power gain: ut>7w, Gp>1dB@Vdd=7.V,f=MHz High Efficiency: 6%typ. (17MHz) High Efficiency: %typ. (MHz).9+/ /-. 3.+/-. APPLICATION For output stage of high power amplifiers in VHF/UHF band mobile radio sets. LASER MARK (Gate).9+/-.1 Terminal No. 1.Drain (output).source (GND) 3.Gate (input) UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc= C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage 3 V VGSS Gate to source voltage +/- V Pch Channel dissipation Tc= C W Tj Junction Temperature 1 C Tstg Storage temperature - to +1 C Rthj-c Thermal resistance Junction to case. C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc= C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=V - - ua IGSS Gate to source leak current VGS=1V, VDS=V ua VTH Gate threshold Voltage VDS=1V, IDS=1mA V ut1 Output power f=17mhz, VDD=7.V W ηd1 Drain efficiency Pin=.3W,Idq=7mA 6 - % ut Output power f=mhz, VDD=7.V W ηd Drain efficiency Pin=.7W,Idq=7mA - % Load VSWR tolerance VDD=9.V,=7W(PinControl) No destroy - f=17mhz,idq=7ma,zg=ω Load VSWR=:1(All Phase) Load VSWR tolerance VDD=9.V,=7W(PinControl) f=mhz,idq=7ma,zg=ω Load VSWR=:1(All Phase) No destroy - Note : Above parameters, ratings, limits and conditions are subject to change. RD7MVS1 MITSUBISHI ELECTRIC REV.1 1 May. 3 1/8
2 RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION Pch(W) DRAIN DISSIPATION VS. AMBIENT TEMPERATURE On PCB(*1) *1:The material of the PCB Glass epoxy (t=.6 mm) On PCB(*1) with Heat-sink Ids(A) Vgs-Ids CHARACTERISTICS Vds=1V AMBIENT TEMPERATURE Ta( C). 1 3 Vgs(V) Vds-Ids CHARACTERISTICS Vds VS. Ciss CHARACTERISTICS Ids(A) Vds(V) Vgs=.V Vgs=V Vgs=.V Vgs=V Vgs=3.V Vgs=3V Ciss(pF) f=1mhz 1 1 Vds(V) Coss(pF) Vds VS. Coss CHARACTERISTICS f=1mhz 1 1 Vds(V) Crss(pF) Vds VS. Crss CHARACTERISTICS f=1mhz 1 1 Vds(V) RD7MVS1 MITSUBISHI ELECTRIC REV.1 1 May. 3 /8
3 RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W TYPICAL CHARACTERISTICS (dbm), Gp(dB), (A) 3 1 Pin- f=17mhz Vdd=7.V Idq=7mA Gp ηd 8 6 ηd(%) ut(w), (A) Pin- ηd Ta= C f=17mhz Vdd=7.V Idq=7mA ηd(%) Pin(dBm). 1 Pin(mW) (dbm), Gp(dB), (A) 3 1 Pin- f=mhz Vdd=7.V Idq=7mA Gp ηd 8 6 ηd(%) ut(w), (A) Pin- ηd Ta= C f=mhz Vdd=7.V Idq=7mA ηd(%) Pin(dBm) Pin(W) 3 (W) Vdd- Ta= C f=17mhz Pin=.3W Icq=7mA Zg=ZI= ohm 6 3 (A) (W) 1 1 Vdd- Ta= C f=mhz Pin=.7W Icq=7mA Zg=ZI= ohm 3 (A) Vdd(V) Vdd(V) RD7MVS1 MITSUBISHI ELECTRIC REV.1 1 May. 3 3/8
4 RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W TYPICAL CHARACTERISTICS 1 8 Vgs-Ids CHARACTERISTICS Vds=1V Tc=-~+7 C - C + C Ids(A) 6 +7 C 3 Vgs(V) RD7MVS1 MITSUBISHI ELECTRIC REV.1 1 May. 3 /8
5 RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W EQUIVALENT CIRCUIT(f=17MHz) Vgg Vdd RF-in mm C1 W 19mm.7kOHM 19.mm.mm 1mm 11.mm 6pF 68OHM 1pF 1pF 18pF 19mm C 1uF,V W RD7MVS1 pf 17MHz L 6.mm 8.mm 3mm 3.mm 11.mm pf 16pF 6pF 1mm mm 6pF RF-out L: Enameled wire 7Turns,D:.3mm,.6mmO.D C1,C:1pF,.uF in parallel Note:Board material- Teflon substrate Micro strip line width=.mm/ohm,er:.7,t=.8mm W:line width=1.mm EQUIVALENT CIRCUIT(f=MHz) Vgg Vdd RF-in C1 W 19mm.7kOHM 6mm 9mm 68pF 3.mm RD7MVS1 MHz 3.mm 3.mm pf 6.mm C 1uF,V 19mm W L 6.mm.mm RF-out 68pF 37pF 1pF pf 6pF 18pF L: Enameled wire Turns,D:.3mm,.6mmO.D C1,C:1pF,.uF in parallel Note:Board material- Teflon substrate Micro strip line width=.mm/ohm,er:.7,t=.8mm W:ine width=1.mm RD7MVS1 MITSUBISHI ELECTRIC REV.1 1 May. 3 /8
6 RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 17MHz Zin* Zout* Zo=1Ω Vdd=7.V, Idq=7mA(Vgg adj.),pin=.8w Zin*=1.+j.3 17MHz Zin* Zout*=3.-j.6 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 17MHz Zout* MHz Zin* Zout* Zo=Ω Vdd=7.V, Idq=7mA(Vgg adj.),pin=.7w Zin*=.76+j.6 Zout*=1.61-j. MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance MHz Zout* RD7MVS1 MITSUBISHI ELECTRIC REV.1 1 May. 3 6/8
7 RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W RD7MVS1 S-PARAMETER DATA Id=1mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) RD7MVS1 S-PARAMETER DATA (@Vdd=1.V, Id=1mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) RD7MVS1 MITSUBISHI ELECTRIC REV.1 1 May. 3 7/8
8 RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD7MVS1 MITSUBISHI ELECTRIC REV.1 1 May. 3 8/8
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