RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W

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Darcy McDonald
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1 ELECTROSTATIC SENSITIVE DEVICE RDHVS Silicon MOSFET wer Transistor 75MHz,.5W DESCRIPTION RDHVS is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING.+/-..6+/-. TYPE NAME.5+/-. FEATURES High power gain ut>.5w, φ. LOT No. 3.9+/-.3.8 MIN 3.5+/-..5+/ APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets..+/-.7.5+/-.7.+/-.7. MAX Terminal No. : GATE : SOURSE 3 : DRAIN UNIT : mm ABSOLUTE MAXIMUM RATINGS (Tc=5 C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=V 3 V VGSS Gate to source voltage Vds=V +/- V Pch Channel dissipation Tc=5 C 3. W Pin Input wer Zg=Zl=5Ω mw ID Drain Current - ma Tch Channel Temperature - 5 C Tstg Storage temperature - - to +5 C Rth j-c Thermal resistance Junction to case C/W Note : Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=5deg.C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current VDS=7V, VGS=V ua IGSS Gate to source leak current VGS=V, VDS=V - - ua Vth Gate threshold Voltage VDS=V, IDS=mA 3 V ut Output power VDD=.5V, Pin=5mW, W ηd Drain efficiency f=75mhz,idq=5ma % Note : Above parameters, ratings, limits and conditions are subject to change. RDHVS MITSUBISHI ELECTRIC REV.5 Apr. /6

2 TYPICAL CHARACTERISTICS ELECTROSTATIC SENSITIVE DEVICE RDHVS Silicon MOSFET wer Transistor 75MHz,.5W CHANNEL DISSIPATION Pch(W) 3 DRAIN DISSIPATION VS. AMBIENT TEMPERATURE On PCB(*) *:The material of the PCB Glass epoxy (t=.6 mm) On PCB(*) with Heat-sink 8 6 AMBIENT TEMPERATURE Ta( C) Ids(A) Vgs-Ids CHARACTERISTICS Vds=V 3 5 Vgs(V) Ids(A).5.5 Vds-Ids CHARACTERISTICS 6 8 Vgs=V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=V Vgs=3V Ciss(pF) Vds VS. Ciss CHARACTERISTICS f=mhz 5 5 Coss(pF) Vds VS. Coss CHARACTERISTICS f=mhz 5 5 Crss(pF) 3 Vds VS. Crss CHARACTERISTICS f=mhz 5 5 RDHVS MITSUBISHI ELECTRIC REV.5 Apr. /6

3 TYPICAL CHARACTERISTICS ELECTROSTATIC SENSITIVE DEVICE RDHVS Silicon MOSFET wer Transistor 75MHz,.5W Pin- CHARACTERISTICS Pin- CHARACTERISTICS Gp 9. (dbm), Gp(dB), (A) f=75mhz Vdd=.5V Idq=5mA Pin(dBm) ut(w), (A) Ta=5 C f=75mhz Vdd=.5V Idq=5mA 5 5 Pin(mW) 8 6 Pin- CHARACTERISTICS Pin- CHARACTERISTICS (dbm), Gp(dB), (A) Gp f=5mhz Vdd=.5V Idq=5mA Pin(dBm) ut(w), (A) Ta=5 C f=5mhz Vdd=.5V Idq=5mA 5 5 Pin(mW) 8 6 Vdd- CHARACTERISTICS Vdd- CHARACTERISTICS (W) Ta=5 C f=75mhz Pin=5mW Idq=5mA Zg=ZI=5 ohm (ma) (W) Ta=5 C f=5mhz Pin=5mW Idq=5mA Zg=ZI=5 ohm (ma) Vdd(V). 6 8 Vdd(V) RDHVS MITSUBISHI ELECTRIC REV.5 Apr. 3/6

4 TEST CIRCUIT(f=75MHz) ELECTROSTATIC SENSITIVE DEVICE RDHVS Silicon MOSFET wer Transistor 75MHz,.5W Vgg Vdd C C uf,5v 8.mm 8.mm mm mm RF-in 8pF 9.5mm pf L.7kOHM.5mm.5mm mm L 8pF 7OHM RDHVS L mm 6.5mm.5mm 5mm.mm 5mm L3 5pF RF-out 3pF 8pF pf L: Enameled wire Turns,D:.3mm,.6mmO.D L:LQGA68N(68nH,murata) L3: Enameled wire 9Turns,D:.3mm,.6mmO.D L: Enameled wire 7Turns,D:.3mm,.6mmO.D C,C:pF,.uF in parallel Note:Board material-glass epoxi substrate Micro strip line width=.mm/5 OHM,er:.8,t=.6mm TEST CIRCUIT(f=5MHz) Vgg Vdd C C W 9mm W 9mm RF-in 6pF 8.5mm mm.7kohm 7.7mm 6.6nH RDHVS 5MHz.6mm 3.mm.5mm 8.nH 6mm.8nH 3.5nH.mm 5.8mm 5mm 9pF RF-out 8pF 5pF pf pf 5pF pf pf 3pF 7pF Note: Board material- Glass epoxy copper-clad laminates FR- Micro strip line width=mm,5 OHM, er:.8, t=.6mm C,C:pF,.uF in parallel W:Line width=.mm RDHVS MITSUBISHI ELECTRIC REV.5 Apr. /6

5 ELECTROSTATIC SENSITIVE DEVICE RDHVS Silicon MOSFET wer Transistor 75MHz,.5W RDHVS S-PARAMETER DATA Id=5mA) Freq. S S S S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) RDHVS S-PARAMETER DATA (@Vdd=.5V, Id=5mA) Freq. S S S S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) RDHVS MITSUBISHI ELECTRIC REV.5 Apr. 5/6

6 ELECTROSTATIC SENSITIVE DEVICE RDHVS Silicon MOSFET wer Transistor 75MHz,.5W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RDHVS MITSUBISHI ELECTRIC REV.5 Apr. 6/6

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,1W DESCRIPTION is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING.+/-.1 1.6+/-.1 TYPE NAME