MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OUTLINE DRAWING 24.0+/-0.6
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1 RD7HHF1 Silicon MOSFET Power Transistor 3MHz,7W DESCRIPTION RD7HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 5.+/ / / C FEATURES High power and High Gain: Pout>7W, High Efficiency: %typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets..+/ / / / /-.3 R1.+/ /-.7.+/ /-. PIN 1.DRAIN.SOURCE 3.GATE ABSOLUTE MAXIMUM RATINGS (Tc=5 C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=V 5 V VGSS Gate to source voltage Vds=V +/- V Pch Channel dissipation Tc=5 C 15 W Pin Input power Zg=Zl=5Ω 5 W ID Drain current - A Tch Channel Temperature C Tstg Storage temperature - - to +175 C Rth j-c Thermal resistance junction to case 1. C/W Note 1: Above parameters are guaranteed independently. UNIT:mm ELECTRICAL CHARACTERISTICS (Tc=5deg.C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=V ua IGSS Gate to source leak current VGS=1V, VDS=V ua VTH Gate threshold voltage VDS=1V, IDS=1mA V Pout Output power f=3mhz,vdd=1.5v 7 - W ηd Drain efficiency Pin=3.5W,Idq=1.A 55 - % Load VSWR tolerance VDD=15.V,Po=7W(Pin Control) f=3mhz,idq=1.a,zg=5ω Load VSWR=:1(All Phase) No destroy - Note : Above parameters, ratings, limits and conditions are subject to change. RD7HHF1 MITSUBISHI ELECTRIC REV.5 APRIL. 1/7
2 RD7HHF1 Silicon MOSFET Power Transistor 3MHz,7W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION Pch(W) 1 1 DRAIN DISSIPATION VS. AMBIENT TEMPERATURE Ids(A) 1 Vgs-Ids CHARACTERISTICS Vds=1V 1 1 AMBIENT TEMPERATURE Ta( C) Vgs(V) Ids(A) 1 Vds-Ids CHARACTERISTICS 1 Vgs=V Vgs=5.7V Vgs=5.V Vgs=5.1V Vgs=.V Vgs=.5V Vgs=.V Ciss(pF) Vds VS. Ciss CHARACTERISTICS 5 f=1mhz Vds VS. Coss CHARACTERISTICS f=1mhz 3 Vds VS. Crss CHARACTERISTICS f=1mhz Coss(pF) 3 Crss(pF) RD7HHF1 MITSUBISHI ELECTRIC REV.5 APRIL. /7
3 RD7HHF1 Silicon MOSFET Power Transistor 3MHz,7W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po(dBm), Gp(dB), Idd(A) f=3mhz Vdd=1.5V Idq=1A Gp Po 1 d(%) Pout(W), Idd(A) 1 Po Idd d Ta=5 C f=3mhz Vdd=1.5V Idq=1A 1 d(%) 1 3 Pin(dBm) 1 3 Pin(W) Po(W) 1 1 Vdd-Po CHARACTERISTICS Ta=5 C f=3mhz Pin=3.5W Idq=1A Zg=ZI=5 ohm Po Idd Idd(A) Ids(A) Vgs-Ids CHARACTORISTICS +5 C 1 Vds=1V Tc=-5~+75 C +75 C -5 C Vdd(V) Vgs(V) 5 Vgs-gm CHARACTORISTICS Vds=1V Tc=-5~+75 C gm(s) 3 +5 C C -5 C Vgs(V) RD7HHF1 MITSUBISHI ELECTRIC REV.5 APRIL. 3/7
4 RD7HHF1 Silicon MOSFET Power Transistor 3MHz,7W TEST CIRCUIT(f=3MHz) Vgg Vdd 33uF,5V Pin pf C L3 1 OHM L 1K OHM pf 33 OHM 1pF L1 33uF,5V pf*3 33pF L 33pF 7pF 1pF Pout pf 1pF pf*3 7pF pf 33pF 33pF :1pF,.uF,.1uF in parallel C:7uF* in parallel L1:Turns,I.Dmm,D1.mm silver plateted copper wire L:1Turns,I.Dmm,D1.mm silver plateted copper wire L3:5Turns,I.Dmm,D.7mm copper wire P=.5mm L:1Turns,I.D1mm,D1.mm silver plateted copper wire Dimensions:mm Note:Board material-teflon substrate micro strip line width=.mm / 5 OHM,er:.7,t=1.mm RD7HHF1 MITSUBISHI ELECTRIC REV.5 APRIL. /7
5 RD7HHF1 Silicon MOSFET Power Transistor 3MHz,7W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=1Ω f=3mhz Zout f=3mhz Zin Zin, Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 3 5.-j..77-j. Po=97W, Vdd=1.5V,Pin=3.5W RD7HHF1 MITSUBISHI ELECTRIC REV.5 APRIL. 5/7
6 RD7HHF1 Silicon MOSFET Power Transistor 3MHz,7W RD7HHF1 S-PARAMETER DATA Id=mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) RD7HHF1 MITSUBISHI ELECTRIC REV.5 APRIL. /7
7 RD7HHF1 Silicon MOSFET Power Transistor 3MHz,7W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD7HHF1 MITSUBISHI ELECTRIC REV.5 APRIL. 7/7
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