RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W

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1 RD1HHF1 Silicon MOSFET Power Transistor 3MHz,1W DESCRIPTION RD1HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 5.+/ / / C FEATURES High power and High Gain: Pout>1W, High Efficiency: %typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets..+/ / / / /-.3 R1.+/ /-.7.+/ /-. PIN 1.DRAIN.SOURCE 3.GATE ABSOLUTE MAXIMUM RATINGS (Tc=5 C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=V 5 V VGSS Gate to source voltage Vds=V +/- V Pch Channel dissipation Tc=5 C 17.5 W Pin Input power Zg=Zl=5Ω 1.5 W ID Drain current - 5 A Tch Channel temperature C Tstg Storage temperature - - to +175 C Rth j-c Thermal resistance junction to case.5 C/W Note 1: Above parameters are guaranteed independently. UNIT:mm ELECTRICAL CHARACTERISTICS (Tc=5 C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zerogate voltage drain current VDS=17V, VGS=V ua IGSS Gate to source leak current VGS=1V, VDS=V ua VTH Gate threshold voltage VDS=1V, IDS=1mA V Pout Output power f=3mhz,vdd=1.5v W ηd Drain efficiency Pin=7W, Idq=1.A 55 - % Load VSWR tolerance VDD=15.V,Po=1W(Pin Control) f=3mhz,idq=1.a,zg=5ω Load VSWR=:1(All Phase) No destroy - Note : Above parameters, ratings, limits and conditions are subject to change. RD1HHF1 MITSUBISHI ELECTRIC REV.3 APRIL. 1/7

2 RD1HHF1 Silicon MOSFET Power Transistor 3MHz,1W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION Pch(W) 1 1 DRAIN DISSIPATION VS. AMBIENT TEMPERATURE Ids(A) 1 Vgs-Ids CHARACTERISTICS Vds=1V 1 1 AMBIENT TEMPERATURE Ta( C) Vgs(V) Ids(A) 1 Vds-Ids CHARACTERISTICS 1 Vgs=V Vgs=5.7V Vgs=5.V Vgs=5.1V Vgs=.V Vgs=.5V Vgs=.V Ciss(pF) Vds VS. Ciss CHARACTERISTICS 5 f=1mhz 1 3 Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS 5 f=1mhz 3 f=1mhz Coss(pF) 3 Crss(pF) RD1HHF1 MITSUBISHI ELECTRIC REV.3 APRIL. /7

3 RD1HHF1 Silicon MOSFET Power Transistor 3MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po(dBm), Gp(dB), Idd(A) f=3mhz Vdd=1.5V Idq=1A Gp Po Idd ηd 1 ηd(%) Pout(W), Idd(A) 1 1 Po Idd ηd Ta=5 C f=3mhz Vdd=1.5V Idq=1A ηd(%) 1 3 Pin(dBm) 1 Pin(W) Po(W) Vdd-Po CHARACTERISTICS Ta=5 C f=3mhz Pin=7W Idq=1A Zg=ZI=5 ohm Po Idd Vdd(V) Idd(A) Ids(A) 1 Vgs-Ids CHARACTERISTICS +5 C Vds=1V Tc=-5~+75 C +75 C -5 C Vgs(V) RD1HHF1 MITSUBISHI ELECTRIC REV.3 APRIL. 3/7

4 RD1HHF1 Silicon MOSFET Power Transistor 3MHz,1W TEST CIRCUIT(f=3MHz) Vgg Vdd C1.7kOHM* L 33uF,5V -5pF kohm /5pF L1 C 7/7/pF C3 L3.7OHM* RF-IN 1OHM L C RF-OUT /pf -5pF 11pF 7pF /5pF -11pF 3/3pF C1:33pF*3,.uF in parallel C:33uF*,pF in parallel C3:pF,pF in parallel C:15pF,1pF in parallel 1 L1:7Turns,I.D1mm,D1.mm P= silver plateted copper wire L:1Turns,I.D1mm,D1.mm P= silver plateted copper wire L3:Turns,I.D1mm,D1.mm P=3 silver plateted copper wire L:3Turns,I.D1mm,D1.mm P=3 silver plateted copper wire Dimensions:mm Note:Board material-teflon substrate micro strip line width=.mm/5ohm,er:.7,t=1.mm RD1HHF1 MITSUBISHI ELECTRIC REV.3 APRIL. /7

5 RD1HHF1 Silicon MOSFET Power Transistor 3MHz,1W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=1Ω f=3mhz Zout f=3mhz Zin Zin, Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 3.-j1.31.-j.1 Po=115W, Vdd=1.5V,Pin=7W RD1HHF1 MITSUBISHI ELECTRIC REV.3 APRIL. 5/7

6 RD1HHF1 Silicon MOSFET Power Transistor 3MHz,1W RD1HHF1 S-PARAMETER DATA Id=mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) RD1HHF1 MITSUBISHI ELECTRIC REV.3 APRIL. /7

7 RD1HHF1 Silicon MOSFET Power Transistor 3MHz,1W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD1HHF1 MITSUBISHI ELECTRIC REV.3 APRIL. 7/7

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OUTLINE DRAWING 24.0+/-0.6

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OUTLINE DRAWING 24.0+/-0.6 RD7HHF1 Silicon MOSFET Power Transistor 3MHz,7W DESCRIPTION RD7HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 5.+/-.3 7.+/-.5 11.+/-.3