MITSUBISHI RF POWER SEMICONDUCTORS

RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W

ELECTROSTATIC SENSITIVE DEVICE RDHVS Silicon MOSFET wer Transistor 75MHz,.5W DESCRIPTION RDHVS is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING.+/-..6+/-.

MITSUBISHI RF POWER MOS FET RD01MUS2. RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

RDMUS RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,W DESCRIPTION RDMUS is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic

INDEX MARK (Gate) Terminal No. For output stage of high power amplifiers in 1.Drain (output)

DESCRIPTION OUTLINE DRAWING is a MOS FET type transistor.+/-.5 specifically designed for VHF RF power 3.3+/-.5.+/-.15.+/-.5.+/-.5 amplifiers applications. FEATURES High Power Gain: Pout>11.5W, Gp>1dB@Vdd=7.V,f=175MHz

RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W

RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W DESCRIPTION RD7MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.+/-.1.6+/-. 1 FEATURES

RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W

Silicon MOSFET Power Transistor 3MHz,1W DESCRIPTION is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>1W, Gp>1dB @Vdd=1.V,f=3MHz

RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W

RD3HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,5MHz,3W DESCRIPTION RD3HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. FEATURES High power gain:

RD9MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 2MHz, W DESCRIPTION RD9MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications..+/-.2.2+/-. (b) 7.+/-.2

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,1W DESCRIPTION is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING.+/-.1 1.6+/-.1 TYPE NAME

RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W

RD3HVF1 Silicon MOSFET Power Transistor,175MHz,3W DESCRIPTION RD3HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>3W, Gp>1.7dB

MITSUBISHI RF POWER MOS FET RD06HVF1. RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

RD6HVF1 DESCRIPTION RD6HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES High power gain: Pout>6W, Gp>1dB @Vdd=1.5V,f=175MHz APPLICATION

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OUTLINE DRAWING 24.0+/-0.6

RD7HHF1 Silicon MOSFET Power Transistor 3MHz,7W DESCRIPTION RD7HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 5.+/-.3 7.+/-.5 11.+/-.3

RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W

RD1HHF1 Silicon MOSFET Power Transistor 3MHz,1W DESCRIPTION RD1HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 5.+/-.3 7.+/-.5 11.+/-.3

OUTLINE DRAWING. SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 25 V

< Silicon RF wer MOS FET (Discrete) > RD7MUSB RoHS Compliance,Silicon MOSFET wer Transistor,17MHz,7MHz,7MHz,7W DESCRIPTION RD7MUSB of RoHS-compliant product is a MOS FET type transistor specifically designed

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING 24.0+/-0.6

RD7HVF1 RoHS Compliance, Silicon MOSFET wer Transistor, 175MHz7W 5MHz,5W DESCRIPTION RD7HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. FEATURES

Product Datasheet Revision: January 2015

Applications Short Haul / High Capacity Links Sensors X=23 mm Y=16 mm Product Features RF Frequency: 92 to 96 GHz Linear Gain: 7.5 db typ. Psat: 25 dbm typ. Die Size: 3.7 sq. mm. 2 mil substrate DC Power:

OUTLINE DRAWING Pin 1. SOURCE (COMMON) 2. OPEN 3. DRAIN 4. SOURCE (COMMON) 5. SOURCE (COMMON) 6. OPEN 7. GATE 8.

5.87 3.65 3..22.34 5.56 a-a' SECTION 12.95 12.69 6.38 < Silicon RF Power MOS FET (Discrete) > DESCRIPTION is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

MMA R GHz, 0.1W Gain Block Data Sheet October, 2012

Features: Frequency Range: 17 43 GHz P1dB: 18 dbm Psat: 2 dbm Gain: 21 db Vdd =4.5 V (3 V to 5 V) Ids = 25 ma (15mA to 3mA) Input and Output Fully Matched to 5 Ω 2x and 3x Frequency multiplier applications

4W CW, MHz Power Transistor

4W CW, 30-2700 Power Transistor FEATURES Frequency: 30-2700 Gain @ 900Mhz: 16.5dB Psat @ 900: 37dBm PAE @ Psat: 47% @ 900 15-28V Operation DESCRIPTION The is a broadband capable 4W GaN on Silicon power

OUTLINE DRAWING SYMBOL PARAMETER CONDITIONS RATINGS UNIT

< Silicon RF wer MOS FET (Discrete) > RDHMS RoHS Compliant,Silicon MOSFET wer Transistor,17MHz,9MHz,W DESCRIPTION RDHMS of RoHS-compliant product is a MOS FET type transistor specifically designed for

AH102. Product Description. Functional Diagram. Product Features. Typical Parameters. Specifications. Absolute Maximum Ratings. Ordering Information

Medium Power, High Linearity Amplifier The Communications Edge Product Features - MHz Bandwidth +45 dbm Output IP3 13 db Gain +27 dbm P1dB MTBF > 7 Hours Internally Matched Multiple Bias Voltages (+7.

OUTLINE DRAWING 6.0+/ INDEX MARK (Gate)

DESCRIPTION is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain: ut>2w, Gp>16dB @Vdd=7.2V,f=17MHz, MHz High Efficiency: 6%typ. (17MHz)

MGA HP GHz 12W High Efficiency GaN Power Amplifier Data Sheet

Features: 13 db Gain 41 dbm and LSG 10 db CW OIP3 54 dbm at 34 dbm per tone PAE 46% at 42 dbm Matched Input and Output for Easy Cascade Surface Mount Package with RoHS Compliance Thermal Resistance is

SPDT SWITCH GaAs MMIC

NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion

< Silicon RF Power MOS FET (Discrete) > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz, 6W, 12.5V DESCRIPTION FEATURES APPLICATION

RoHS Compliance, Silicon MOSFET Power Transistor 75MHz, 6W,.5V DESCRIPTION is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W,

UHF BAND LOW NOISE AMPLIFIER GaAs MMIC

NJGHA UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJGHA is a low noise amplifier GaAs MMIC designed for mobile digital TV application (~ MHz). This IC features good gain flatness, and low

SP3T SWITCH GaAs MMIC

NJG184K64 SP3T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG184K64 is a GaAs SP3T switch MMIC which is suitable for WLAN(82.11a/b/g/n/ac) and Bluetooth applications. This MMIC switches between a common

OUTLINE DRAWING. SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V

RD7MVS1B RoHS Compliant product, Silicon MOSFET wer Transistor,17MHz,2MHz,7W DESCRIPTION RD7MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD7MVS1B

< Silicon RF Power MOS FET (Discrete) > RD16HHF1 DESCRIPTION FEATURES APPLICATION. RoHS COMPLIANT PINS 1:GATE 9.5MAX

RoHS Compliance, Silicon MOSFET Power Transistor 3MHz,16W DESCRIPTION is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>16W, Gp>16dB

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC NJG1528KC1 Revised Feb./16/01 Ver.2 GENERAL DESCRIPTION NJG1528KC1 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as

< Silicon RF Power MOS FET (Discrete) > RD35HUP2 RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W, 12.5V

RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 53MHz, 35W,.5V DESCRIPTION is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING FEATURES

PDC Dual Band LNA GaAs MMIC

PDC Dual Band LNA GaAs MMIC GENERAL DESCRIPTION The is a dual band low noise amplifier for 8MHz and MHz band. The band switching between 8MHz CD, A Band and MHz is made by bit control signal by using inverter

12.5W CW, MHz Power Transistor

Preliminary Specification 12.5W CW, 2-3MHz Power Transistor FEATURES Frequency: 2-3MHz Gain @ 8Mhz: 17dB Psat @ 8MHz: 42dBm PAE @ Psat: 52% @ 8MHz 28V Operation DESCRIPTION The is a broadband capable 12.5W

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit

FEATURES High Voltage Operation : VDS=V High Power :.5dBm (typ.) @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6ghz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency,

SPDT SWITCH GaAs MMIC

NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion

< Silicon RF Power MOS FET (Discrete) > RD10MMS2

RD1MMS RoHS Compliance, Silicon MOSFET Power Transistor,7MHz,1W DESCRIPTION RD1MMS RoHS-compliant product is a MOS FET type transistor specifically designed for 7MHz RF power amplifiers applications. OUTLINEDRAWING

QPA1003P 1 8 GHz 10 W GaN Power Amplifier

QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from

MMA M4. Features:

Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:

WIDE BAND AGC AMPLIFIER GaAs MMIC

NJGF WIDE BAND AGC AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJGF is a GaAs MMIC designed mainly for wireless phone handsets at frequency range of 8MHz from.ghz. NJGF is a variable gain amplifier with db

OUTLINEDRAWING SYMBOL PARAMETER CONDITIONS RATINGS UNIT

RD1MMS RoHS Compliance, Silicon MOSFET Power Transistor,7MHz,1W DESCRIPTION RD1MMS RoHS-compliant product is a MOS FET type transistor specifically designed for 7MHz RF power amplifiers applications. OUTLINEDRAWING

TB266 Frequency=1.5-30MHz Pout=150W Gain=21-23dB Vds=24Vdc Idq=1.5A Efficiency=52-53% LS2541HF

TB266 Frequency=1.5-30MHz Pout=150W Gain=21-23dB Vds=24Vdc Idq=1.5A Efficiency=52-53% LS2541HF Order of Operations: 1. Review amplifier s performance curves in the data package to learn its RF power limitations.

MMA M GHz, 3W Power Amplifier Data Sheet

Features: Frequency Range: 21 27 GHz Psat: 34 dbm IM3 Level -40dBc @Po=20dBm/tone Gain: 25 db Vdd =6 V Ids = 1500 to 2800 ma Input and Output Fully Matched to 50 Ω Integrated RF power detector 1 2 3 4

HIGH POWER SP4T SWITCH GaAs MMIC

NJG189ME7 HIGH POWER SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG189ME7 is a high power SP4T switch MMIC suitable for LTE-U / LAA, WLAN, and LTE applications. This switch features very low insertion

Type Marking Ordering code (taped) CGY 180 CGY 180 Q68000-A8882 MW 12

Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 5 Ω, simple

8.0+/-0.2. (d) (4.5) INDEX MARK [Gate] SIDE VIEW

RD9MUP RoHS Compliance, Silicon MOSFET Power Transistor, MHz, W, 7.V DESCRIPTION RD9MUP is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications..+/-..+/-. (b) 7.+/-.

MMA GHz, 0.1W Gain Block

Total Size: 172 x 76 Scribe Alley: 7 x 7 MMA-174321 Features: Frequency Range: 17 43 GHz P1dB: 21 dbm Psat: 22 dbm Gain: 22 db Vdd =5 V (3 V to 5 V) Ids = 2 ma (15mA to 3mA) Input and Output Fully Matched

SPDT SWITCH GaAs MMIC

NJG115K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG115K75 is a 1bit control SPDT switch. The switch is used for WLAN system. The switch features low insertion loss, high isolation for high frequency

MMA GHz, 1W MMIC Power Amplifier Data Sheet March, 2012

Features: Frequency Range: 37 40 GHz P1dB: +30.5 dbm IM3 Level: -40 dbc @Po=18dBm/tone Gain: 22 db Vdd = 5V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector Applications:

SPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1516R is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch features low loss, high isolation at high power, and exhibits

LOW NOISE AMPLIFIER GaAs MMIC. -4.0dBm

LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG7HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP operated by single low positive

SPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC! GENERAL DESCRIPTION! PACKAGE OUTLINE The NJG1608KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. The NJG1608KB2 is suitable for switching

RoHS COMPLIANT MGF4841CL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking.

DESCRIPTION The power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The is designed for automotive application and AEC-Q1 qualified. FEATURES High gain and High

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG162HE3 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as CDMA, GPS and PCS. This switch features

MMA M GHz, 1W MMIC Power Amplifier Data Sheet

Features: Frequency Range: 37-41 GHz P1dB: +30.5 dbm IM3 Level: -41 dbc @Po=18dBm/tone Gain: 22 db Vdd = 4 to 6 V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector

700MHz Band Application

7MHz Band Application SUMMARY The characteristics of 7MHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed. MEASURED DATA DC Characteristics General Condition:

MMA R GHz 4W MMIC Power Amplifier Data Sheet Old package not recommended for new designs

Old package not recommended for new designs Features: Frequency Range: 28-31 GHz P1dB: +36 dbm IM3 Level: -35 dbc @Po=26dBm/tone Gain: 22 db Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched

TGA2710-SM 8W GHz Power Amplifier

Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9.5-11.5 GHz Saturated Output Power: 39 dbm Small

SP3T SWITCH GaAs MMIC

SP3T SWITCH GaAs MMIC NJG188K94 GENERAL DESCRIPTION PACKAGE OUTLINE The NJG188K94 is a low power SP3T switch controlled by two bits signals. The low loss performance and high Isolation makes the switch

SGK A C-Band Internally Matched GaN-HEMT

FEATURES High Output Power: P5dB=43.0dBm (Typ.) High Gain: GL=12.0 to 13.0dB (Typ.) High Power Added Efficiency: PAE=41% (Typ.) Broad Band: 5.85 to 7.2GHz Internally Matched Plastic Package for SMT applications

Innogration (Suzhou) Co., Ltd.

Gallium Nitride 28V 50W, RF Power Transistor Description The GTAH58050GX is a 50W internally matched, GaN HEMT, designed from 5 to 6GHz, especially point-to-point communication, broadband wireless access,

TGA2704-SM 8W 9-11 GHz Power Amplifier

Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9 - Saturated Output Power: 39 dbm Small Signal

SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V

DESCRIPTION is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. improved a drain surge than RD2MUS1 by optimizing MOSFET structure. OUTLINE DRAWING FEATURES

MMA M GHz 4W MMIC Power Amplifier Data Sheet

Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN

TQP Data Sheet. 2.4GHz ISM Band InGaP HBT Matched Power Amplifier. Functional Block Diagram. Features. Product Description

TQP Functional Block Diagram N/C RF In N/C Vref 1 2 3 4 Vc1 16 N/C 5 6 N/C N/C Product Description 15 Bias controller Vc2 14 Vc3 13 7 8 N/C Vdet_out 12 N/C 11 RF Out 1 N/C 9 N/C The TQP is a high performance,

Features: Applications: Description: Absolute Maximum Ratings: (Ta= 25 C)* 28-31GHz 2.5W MMIC Power Amplifier Preliminary Data Sheet

Features: Frequency Range: 28-31 GHz P3dB: +34 dbm IM3 Level: -35 dbc @Po=26dBm/tone Gain: 20 db Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω Integrated Output Power Detector

Advance Datasheet Revision: April 2015

APN 1-1 GHz Advance Datasheet Revision: April Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios VSAT Test Instrumentation X = 3 um Y = 3 um Product Features RF frequency: 1

MMA D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet

Features: Frequency Range: 30KHz 50 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 15.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω On-Chip Output Power Voltage Detector Die Size 2.35mm

TB269 Frequency= MHz Pout=250W Gain=18.0dB Vds=28Vdc Idq=1.1A 56% Efficiency LS2641

TB269 Frequency=38-5MHz Pout=25W Gain=18.dB Vds=28Vdc Idq=1.1A 56% Efficiency LS2641 Order of Operations: 1. Review amplifier s performance curves in the data package to learn its RF power limitations.

800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC

NJG14KB 8MHz BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE NJG14KB is a variable gain low noise amplifier (LNA). At 8MHz band, noise figure is 1.dB, variable gain re is 1dB and

MQ1270VP LDMOS TRANSISTOR

700W, 50V High Power RF LDMOS FETs Description The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz. It is featured

MMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012

Features: Frequency Range: 30KHz 40 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 13.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω In 4x4mm QFN package Applications: Fiber optics communication

Өjc Thermal Resistance Pulse Width=128uS, Duty=10% 0.2 C/W Bias Condition: Vdd=+65V, Idq=1000mA peak current (Vgs= -2.0 ~ -4.

Preliminary 0912GN-600 GENERAL DESCRIPTION The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain, 600 Watts of pulsed RF output

Application Note. RFG1M20180, 2110MHz to 2170MHz, 48V, 300Wpk Doherty Reference Design

Abstract Application Note RFG1M20180, 2110MHz to 2170MHz, 48V, 300Wpk Doherty Reference Design This application note is intended to provide a reference point for an amplifier circuit design using RFMD

W-LAN/WiMAX Application

1. 2.4GHz BAND APPLICATION W-LAN/WiMAX Application 1-1 SUMMARY The characteristics of 2.4GHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 1-2-1 MEASURED

ENGDA Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA Features. Typical Applications. Description. Functional Block Diagram

Typical Applications ENGDA00072 Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA00072 Features Military EW and SIGINT Receiver or Transmitter Telecom Infrastructure Space Hybrids Test and Measurement

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1528HD3 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as CDMA, AMPS and PCS. This switch features

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC! GENERAL DESCRIPTION! PACKAGE OUTLINE The NJG1657MD7 is a GaAs DPDT switch featured low insertion loss, high isolation and small size package, and suited for mobile terminal applications.

CHX2090-QDG RoHS COMPLIANT

RoHS COMPLIANT Description GaAs Monolithic Microwave IC in SMD leadless package The CHX2090-QDG is a cascadable frequency doubler monolithic circuit, which integrate an output buffer amplifier that produces

TB263 Frequency=30-512MHz Pout=180W Gain= dB Vds=28Vdc Idq=0.5A Efficiency=56-70% LS2641

TB263 Frequency=-512MHz Pout=18W Gain=16.87-2.51dB Vds=28Vdc Idq=.5A Efficiency=56-7% LS2641 Order of Operations: 1. Review amplifier s performance curves in the data package to learn its RF power limitations.

MMA GHz 1W Traveling Wave Amplifier Data Sheet

Features: Frequency Range:.1 2 GHz P3dB: +29 dbm Gain: 12.5 db Vdd =12 V Ids =5 ma Input and Output Fully Matched to 5 Ω Applications: Fiber optics communication systems Microwave and wireless communication

GPS LOW NOISE AMPLIFIER GaAs MMIC. -2.0dBm GND RFOUT

GPS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION This IC is a Low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP operated by single low

SILICON POWER MOS FET NE A

SILICON POWER MOS FET 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The is an N-channel silicon power laterally diffused MOS FET specially designed as

Wide Band Low Noise Amplifier GaAs MMIC

NJG12KA1 Wide Band Low Noise Amplifier GaAs MMIC GENERAL DESCRIPTION The NJG12KA1 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial application. To achieve wide dynamic range,

NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mw) 3-PIN POWER MINIMOLD (34 PACKAGE)

NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (8 mw) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (8 mw) AMPLIFICATION PO = 29 dbm TYP.

MMA M GHz, 2W Power Amplifier Data Sheet

Features: Frequency Range: 12.5 15.5 GHz P1dB: 32 dbm IM3 Level -44dBc @Po=dBm/tone Gain: 23.5 db Vdd =4 to 6 V Ids = 10 to 2500 ma Input and Output Fully Matched to 50 Ω Integrated RF power detector Surface

NPA105-D. Preliminary GHz GaN 40W Power Amplifier. Product Description: Key Features:

Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.

ASL 1005P3 Data Sheet Rev: 1.0 Apr 2017

ASL P3 Rev:. Apr 27.8 4 GHz Frequency Tunable Ultra Low Noise Amplifier Features Frequency Range:.8-4 GHz.7 db typ. NF Tunable Noise match 2 db 4dBm Nominal PdB On-chip DC Blocks -7mA Tunable Bias current.-um

MEDIUM POWER AMPLIFIER GaAs MMIC

MEDIUM POWER AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG132V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanese PHS handset, but suitable digital wireless phone and wireless

800MHz BAND FRONT-END GaAs MMIC

MHz BAND FRONT-END GaAs MMIC GENERAL DESCRIPTION NJG7KC is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for MHz band cellular phone handsets. The ultra small &

500 MHz AM/ASK RECEIVER IC UPC8116GR

MHz AM/ASK RECEIVER IC UPCGR FEATURES INTERNAL BLOCK DIAGRAM WIDEBAND RF & LO BANDWITH: ~ MHz HIGH GAIN: db Typical DYNAMIC RANGE: 7 db LOW POWER DISSIPATION: mw @ V POWER SAVE FUNCTION SMALL PACKAGE:

< Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V DESCRIPTION FEATURES APPLICATION

DESCRIPTION is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>16dB @Vdd=1.5V,f=3MHz Integrated gate protection diode 1.3MIN

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1648HB6 is a GaAs DPDT switch IC that features low loss, low current consumption and low control voltage. This IC includes logic decoder, and can be operated

14-17 GHz Packaged Doubler with Amplifier. TriQuint Semiconductor: www. triquint.com (972) Fax (972) April 2012 Rev B

14-17 GHz Packaged Doubler with Amplifier Key Features RF Output Frequency Range: 28-34 GHz Input Frequency Range: 14-17 GHz Output Power: 20 dbm Nominal Conversion Gain: 15 db Nominal Input Frequency

PD RF power transistor The LdmoST plastic family. Features. Description

RF power transistor The LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P OUT = 2 W with 13 db gain @ 870 MHz Plastic package ESD protection

Advanced Information: AI GHz Low Noise Amplifier. GaAs Monolithic Microwave IC

: AI1801 GaAs Monolithic Microwave IC UMS has developed a two-stage self-biased wide band monolithic Low Noise Amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from

AH1. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (4) Absolute Maximum Rating

Product Features 25 4 MHz +41 dbm OIP3 3 db Noise Figure.5 db Gain +22 dbm P1dB Lead-free/Green/RoHS-compliant SOT-8 Package Single +5 V Supply MTTF > 1 years Applications Mobile Infrastructure CATV /

GPS Front-End Module

NJGPCD GPS Front-End Module GENERAL DESCRIPTION The NJGPCD is a front-end module (FEM) designed for GPS applications. Its ultra-low current consumption is particularly suitable for wearable devices. This

900 MHz SILICON MMIC DOWN CONVERTER

900 MHz SILICON MMIC DOWN CONVERTER UPC1687G FEATURES CONVERSION GAIN AND NOISE FIGURE vs. FREQUENCY WIDE-BAND OPERATION: DC to 890 MHz 16 SMALL PACKAGE DOUBLE BALANCED MIXER: Low Distortion Low Oscillator

30dB P IN =25dBm. 0.50dB P IN =25dBm. 33dB P IN =25dBm. 21dB

NJG1HA8 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1HA8 is a GaAs SPDT switch IC suited for antenna switch of WiMAX application and other wireless handsets. The NJG1HA8 features high power handling,

MMA GHz, 0.1W Gain Block Data Sheet

Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vds=5V Psat: 19.5 dbm @ Gain: 14 db Vdd =3 to 6 V Ids = 13 ma Input and Output Fully Matched to 5 Ω Applications: Communication systems Microwave instrumentations

GND N/C GND RF IN N/C N/C N/C GND

MAAP-11246 Features High Gain: 23 db P1dB: dbm P SAT : 33 dbm IM3 Level: -22 dbc @ P OUT 27 dbm/tone Power Added Efficiency: 24% at P SAT Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant Description