800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC

Transcription

1 NJG14KB 8MHz BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE NJG14KB is a variable gain low noise amplifier (LNA). At 8MHz band, noise figure is 1.dB, variable gain re is 1dB and input 3rd order intercept point is +dbm. These characteristics are very suitable for CDMA cellular phone application. The variable attenuators placed in front of LNA realize wide NJG14KB re of input power with low distortion. An ultra small and ultra thin FLP-B package is adopted. FEATURES Low voltage operation +.8V typ. Low current consumption.ma typ. High gain 1dB Low noise figure 1.dB Variable gain control 1dB =. to 1.7V High input IP3 +dbm P in =-3dBm High output IP3 +1dBm P in =-3dBm Ultra small & ultra thin package FLP-B (Mount Size:.1x.x.7mm) PIN COIGURATION KB Type (Top View) 4 3 Pin Connection AMP ATT 1 1.SOURCE.GND 3.RFout 4.GND.V.RFin Note: The portion above shows orientation mark printed on the package surface

2 NJG14KB ABSOLUTE MAXIMUM RATINGS ( T a = C, Z s =Z l =Ω ) PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V. V Control Voltage V 4. V Input Power P in V =.8V + dbm Power Dissipation P D 4 mw Operating Temperature T opr -4~+8 C Storage Temperature T stg -~+1 C ELECTRICAL CHARACTERISTICS =.8V, V =1.7V, f=8mhz, T a = C, Z s =Z l =Ω ) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq MHz Drain Voltage V.7.8. V Control Voltage V V Operating Current I No RF Signal ma Control Terminal Current I No RF Signal ua Small Signal db Flatness G flat f=83~9mhz db Control Re G V =.V, 1.7V... db Noise Figure db Pout at 1dB Compression point P -1dB dbm Output 3rd Order f=8.+8.1mhz Intercept Point Pin=-3dBm dbm Input 3rd Order f=8.+8.1mhz IIP3-1 Intercept Point 1 Pin=-3dBm dbm f=8.+8.1mhz Input 3rd Order IIP3- Pin=-dBm Intercept Point V =.V dbm RF Input Port VSWR VSWR i RF Output Port VSWR VSWR o

3 NJG14KB TERMINAL IORMATION Pin Function Description This terminal is internally connected to FET s source of LNA. Please connect selfbias resistor (R1) and bypass capacitor (C3) through source inductor (L). and 1 SOURCE IIP3 are tunable by C3 and L., 4 GND Ground ) terminal. Ground plane should be placed as close to the ground terminals.. 3 RFout RF output and drain voltage supplies terminal. External matching circuit is required. V control voltage ) supplies terminal. RFin RF input terminal. External matching circuit and DC blocking capacitor are required

4 NJG14KB 4., vs. frequency =1.7V,I =ma), vs. frequency =.V,I =ma) frequency (MHz) frequency (MHz) 1 Pout, vs. Pin =1.7V,f=8MHz) Pout, vs. Pin =.V,f=8MHz) Pout (dbm) P-1dB=7.7dBm 1 Pout (dbm) Pout - -3 Pout Pin (dbm) Pin (dbm) Pout,IM3 (dbm) Pout, IM3 vs. Pin =1.7V,I =ma,f=8+8.1mhz) Pout IM3 f=84.9mhz IM3 f=8.mhz IM3 Pout Pout,IM3 (dbm) Pout Pout IM3 f=84.9mhz IM3 f=8.mhz Pout, IM3 vs. Pin =.8V, V =.V, f=8+8.1mhz) -8 IIP3=.dBm Pin (dbm) -8 IM3 IIP3=.dBm Pin (dbm) - 4 -

5 NJG14KB 3, vs. V =.8V, f=8mhz),iip3 vs. V =.8V,I =ma,f=8+8.1mhz,pin=-3dbm) (dbm) 1 IIP3 (dbm) V ) IIP V )., vs. I =1.7V,f=8MHz) 1,IIP3 vs. I =1.7V,f=8+8.1MHz,Pin=-3dBm) (dbm) 1 IIP3 IIP3 (dbm) I (ma) I (ma) Rbias vs. I =.8V, V =1.7V) Rbias (ohm) Equations of and IIP3 3 Pout - IM3 = IIP3 = - V=1.7V@ Pin=-3dBm V=.V@ Pin=-dBm I (ma) - -

6 NJG14KB., vs. V =1.7V,f=8MHz),IIP3 vs. V =1.7V,f=8+8.1MHz,Pin=-3dBm) (dbm) 1 IIP3 IIp3 (dbm) V ) V ) 7. I vs. V =1.7V),IIP3 vs. frequency =1.7V,f1=freq,f=freq+kHz,Pin=-3dBm) I (ma)..4 (dbm) IIP3 (dbm). 19 IIP V frequency (MHz) I vs. Ta =1.7V) I (ma) Equations of and IIP3 3 Pout - IM3 = IIP3 = - V=1.7V@ Pin=-3dBm V=.V@ Pin=-dBm - Ta ( o C) - -

7 NJG14KB 1 - vs. Ta ariable V) Delta (max)=1.3db@ta=-4to8 o C,V=1.3V V=1.3V V=1.V V=1.1V V=1.4V V=.V V=.4V V=.V - - Ta ( o C) =.8V,freq=8MHz) V=1.V V=.9V V=.8V V=V, vs. Ta, vs. Ta =1.7V,freq=8MHz) =.V,freq=8MHz) Ta ( o C) - - Ta ( o C),IIP3 vs. Ta =1.7V,freq=8+8.1MHz,Pin=-3dBm) 3,IIP3 vs. Ta =.V,freq=8+8.1MHz,Pin=-dBm) IIP3 IIP3 (dbm) 4 4 IIP3 (dbm) (dbm) 4 IIP3 (dbm) - Ta ( o C) 1 - Ta ( o C) - 7 -

8 NJG14KB S11,S1,S1,S vs. frequency S11,S1,S1,S vs. frequency S1 =1.7V,I =ma) 3 - S11 =.V,I =ma) S S11,S,S1 (db) S S11 S1 - - S1 (db) S11,S,S1 (db) - -1 S1 S S1 (db) frequency (MHz) frequency (MHz) S11,S vs. frequency =1.7V,I =ma) S11,S vs. frequency =.V,I =ma) - - S11,S (db) - -1 S11,S (db) - -1 S S11 S S11-1 frequency (GHz) - 1 frequency (GHz) S1 S1,S1 vs. frequency =1.7V,I =ma) - S1 S1,S1 vs. frequency =.V,I =ma) - - S1 (db) S frequency (GHz) S1 (db) S1 (db) S frequency (GHz) S1 (db) - 8 -

9 NJG14KB Scattering Parameter Table at Maximum V =.8V, V =1.7V, I =.1mA, Z o =Ω Freq (MHz) S11 S1 S1 S Reference Plane GND 4 3 Network Analyzer Port RFout V =1.7V Vcont AMP GND p RFin ATT SOURCE 1 Network Analyzer Port1 1.n Reference Plane p Note V (=.8V) is supplied through BIAS CONNECT (PORT) of Network Analyzer

10 NJG14KB Scattering Parameter Table at Minimum V =.8V, V =.V, I =.1mA, Zo=Ω Freq (MHz) S11 S1 S1 S Reference Plane GND 4 3 Network Analyzer Port RFout V =.V Vcont AMP GND p RFin ATT SOURCE 1 Network Analyzer Port1 1.n Reference Plane p Note V (=.8V) is supplied through BIAS CONNECT (PORT) of Network Analyzer. - -

11 NJG14KB RECOMMENDED CIRCUIT GND 4 RFout 3 L3 C RF Output V =.V to 1.7V Vcont AMP GND L4 V =.8V C C4 RF Input L1 C1 L RFin ATT SOURCE 1 L R1 C3 RECOMMENDED PCB DESIGN V V C4 C L4 L3 C RF Output RF Input L1 L C1 C3 L R1 PCB: FR4 t=.mm MICROSTRIP LINE WIDTH=.4mm(Zo=Ω) PCB SIZE:.x.mm Parts List (f=83~9mhz) PARTS ID Constant Comment L1 nh TAIYO-YUDEN HK Series L nh TAIYO-YUDEN HK18 Series L3 nh TAIYO-YUDEN HK Series L4 1nH TAIYO-YUDEN HK Series L.nH TAIYO-YUDEN HK Series C1, C4, C pf MURATA GRM3 Series C pf MURATA GRM3 Series C3 pf MURATA GRM3 Series R1 1Ω - PRECAUTIONS 1) The inductor of 18 size is recommended for characteristics. ) The value of C3 is selected to get lower gain and higher output IP

12 NJG14KB PACKAGE OUTLINE (FLP-B).±.1 4.7± ±.1.1± Lead material : Copper Lead surface finish: Solder plating Molding material : Epoxy resin UNIT : mm Weight :.mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be daed with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these daes