GNSS LOW NOISE AMPLIFIER
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- Augustine Harrington
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1 GNSS LOW NOISE AMPLIFIER GENERAL DESCRIPTION The NJG11KA1 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). This amplifier achieves high gain and a good balance between ultra-low noise figure and excellent VSWR, while low current consumption and high IP, respectively. The NJG11KA1 operates from +1.V to +.V supply voltage range and current consumes is as low as.ma. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance. An ultra-small and easy mounting package of FLP-A1 is adopted. PACKAGE OUTLINE NJG11KA1 APPLICATIONS GNSS applications, like GPS, Galileo, GLONASS and COMPASS. FEATURES Low supply voltage 1.V/.V Low current consumption.ma V DD =.V 1.mA V DD =1.V High gain 1.dB f=17mhz, V DD =.V Low noise figure.db f=17mhz, V DD =.V High Input IP -.dbm f=17mhz, V DD =.V Small package FLP-A1 (Package size: 1.mm x 1.mm x.mm typ.) RoHS compliant and halogen free, MSL1 PIN CONFIGURATION (Top View) RFIN GND NC(GND) GND GND RFOUT 1 Pin connection 1. RFOUT. GND. GND. RFIN. GND. NC (GND) 1 Pin INDEX Note: Specifications and description listed in this datasheet are subject to change without notice. Ver
2 ABSOLUTE MAXIMUM RATINGS NJG11KA1 Ta=+ C, Zs=Zl=Ω PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage V DD. V Input power P IN V DD =.V +1 dbm Power dissipation P D -layer FR PCB with through-hole (7.mmx7.mm), T j =1 C mw Operating temperature T opr - to + C Storage temperature T stg - to +1 C ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS) General conditions: V DD =.V, Ta=+ C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Supply voltage V DD V Supply current 1 I DD 1 RF OFF, VDD=.V -.. ma Supply current I DD RF OFF, VDD=1.V ma - -
3 ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS) General conditions: V DD =.V, f RF =1.7GHz, Ta=+ C, Zs=Zl=Ω, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Small signal gain Gain db Noise figure Input power at 1dB gain compression point 1 Input rd order intercept point 1 NF1 Exclude PCB, Connector Losses(.dB) -..9 db P-1dB(IN) dbm IIP_1 f1=f RF, f=f1+khz, Pin=-dBm dbm RF input VSWR 1 VSWRi RF output VSWR 1 VSWRo ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS) General conditions: V DD =1.V, f RF =1.7GHz, Ta=+ C, Zs=Zl=Ω, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Small signal gain Gain -. - db Noise figure Input power at 1dB gain compression point Input rd order intercept point NF Exclude PCB, Connector Losses(.dB) -. - db P-1dB(IN) dbm IIP_ f1=f RF, f=f1+khz, Pin=-dBm dbm RF input VSWR VSWRi RF output VSWR VSWRo
4 TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 RFOUT RF output and voltage supply terminal. GND Ground terminal (V), Connect to the PCB ground plane. GND Ground terminal (V), Connect to the PCB ground plane. RFIN RF input terminal. DC blocking capacitor is not required. An external matching circuit is required. GND Ground terminal (V), Connect to the PCB ground plane. NC(GND) No connected terminal. This terminal is not connected with internal circuit. Please connect to the PCB ground Plane. - -
5 ELECTRICAL CHARACTERRISTICS (V DD =.V) (Conditions: Ta=+ C, V DD =.V, Zs=Zl=Ω, with application circuit.) 1 Pout vs. Pin (VDD=.V, frf=17mhz) Gain Gain, IDD vs. Pin (VDD=.V, frf=17mhz) 9 Pout (dbm) - Pout Gain (db) IDD (ma) - 1 IDD -1 P-1dB(IN)=-1.dBm Pin (dbm) P-1dB(IN)=-1.dBm Pin (dbm) Pout, IM vs. Pin (VDD=.V, f1=17mhz, f=f1+khz) OIP, IIP vs. frequency (VDD=.V, f1=1~1mhz, f=f1+khz, Pin=-dBm) Pout, IM (dbm) Pout IM - IIP=-.dBm Pin (dbm) OIP (dbm) OIP 1 IIP frequency (MHz) - IIP (dbm). NF, Gain vs. frequency (VDD=.V, f=1~1mhz) k factor vs. frequency (VDD=.V, f=mhz~ghz). Noise Figure (db) NF Gain 1 Gain (db) k factor 1 (NF: Exclude PCB, Connector Losses) frequency (MHz) 1 frequency (GHz) - -
6 ELECTRICAL CHARACTERRISTICS (V DD =.V) (Conditions: V DD =.V, Zs=Zl=Ω, with application circuit.) Gain, NF vs Temperature (VDD=.V, f=17mhz). - P-1dB(IN) vs. Temperature (VDD=.V, f=17mhz). -1 Gain (db) 1 19 Gain NF Noise Figure (db) P-1dB(IN) (dbm) P-1dB(IN) (NF: Exclude PCB, Connector Losses) OIP, IIP vs. Temperature (VDD=.V, f1=17mhz, f=f1+khz, Pin=-dBm).. VSWR vs. Temperature (VDD=.V, f=17mhz) VSWRi VSWRo OIP (dbm) OIP IIP 1 IIP (dbm) -1 - VSWR IDD vs. Temperature (VDD=.V, RF OFF) IDD (ma) IDD
7 ELECTRICAL CHARACTERRISTICS (V DD =1.V) (Conditions: Ta=+ C, V DD =1.V, Zs=Zl=Ω, with application circuit.) Pout vs. Pin (VDD=1.V, frf=17mhz) Gain, IDD vs. Pin (VDD=1.V, frf=17mhz) Gain 7 Pout (dbm) Pout Gain (db) IDD IDD (ma) - P-1dB(IN)=-17.dBm Pin (dbm) 1 P-1dB(IN)=-17.dBm Pin (dbm) Pout, IM vs. Pin (VDD=1.V, f1=17mhz, f=f1+khz) OIP, IIP vs. frequency (VDD=1.V, f1=1~1mhz, f=f1+khz, Pin=-dBm) Pout, IM (dbm) Pout IM - IIP=-.dBm Pin (dbm) OIP (dbm) 1 OIP 1 1 IIP frequency (MHz) - - IIP (dbm). NF, Gain vs. frequency (VDD=1.V, f=1~1mhz) Noise Figure (db) NF Gain 1 1 Gain (db). 1 (NF: Exclude PCB, Connector Losses) frequency (MHz) - 7 -
8 ELECTRICAL CHARACTERRISTICS (V DD =1.V) (Conditions: V DD =1.V, Zs=Zl=Ω, with application circuit.) 1 Gain, NF vs Temperature (VDD=1.V, f=17mhz). - P-1dB(IN) vs. Temperature (VDD=1.V, f=17mhz). -1 Gain (db) Gain NF Noise Figure (db) P-1dB(IN) (dbm) P-1dB(IN) (NF: Exclude PCB, Connector Losses) OIP, IIP vs. Temperature (VDD=1.V, f1=17mhz, f=f1+khz, Pin=-dBm) VSWR vs. Temperature (VDD=1.V, f=17mhz) VSWRi VSWRo OIP (dbm) OIP IIP - IIP (dbm) VSWR IDD vs. Temperature (VDD=1.V, RF OFF) k factor vs. Temperature (VDD=1.V, f=mhz~ghz) 1 IDD (ma) IDD k factor - o C - o C - o C 1 o C + o C + o C o C 1 frequency [GHz] - -
9 ELECTRICAL CHARACTERRISTICS (Conditions: Ta=+ C, Zs=Zl=Ω, with application circuit.) Gain, NF vs. VDD (f=17mhz). -1 P-1dB(IN) vs. VDD (f=17mhz). -1 Gain (db) Gain NF (NF: Exclude PCB, Connector Losses) VDD (V) Noise Figure (db) P-1dB(IN) (dbm) P-1dB(IN) VDD (V) OIP (dbm) OIP, IIP vs. VDD (f1=17mhz, f=f1+khz, Pin=-dBm) OIP IIP IIP (dbm) VSWR VSWRi VSWRo VSWR vs. VDD (f=17mhz) VDD (V) VDD (V) IDD vs. VDD (RF OFF) IDD (ma) IDD VDD (V) - 9 -
10 ELECTRICAL CHARACTERRISTICS (V DD =.V) (Conditions: Ta=+ C, V DD =.V, Zs=Zl=Ω, with application circuit.) VSWR S1, S1 S11, S Zin, Zout S11, S (MHz to GHz) S1, S1 (MHz to GHz) - -
11 ELECTRICAL CHARACTERRISTICS (V DD =1.V) (Conditions: Ta=+ C, V DD =1.V, Zs=Zl=Ω, with application circuit.) VSWR S1, S1 S11, S Zin, Zout S11, S (MHz to GHz) S1, S1 (MHz to GHz)
12 APPLICATION CIRCUIT (Top View) RF IN L1.nH RFIN GND GND GND NC(GND) RFOUT 1 L 1nH L.1nH C1 1.pF RF OUT 1 Pin INDEX C pf V DD TEST PCB LAYOUT (Top View) Parts list: Parts ID Comments RF IN L1 C1 L L C RF OUT L1 to L C1, C MURATA LQPT_ Series MURATA GRM Series 1 Pin INDEX V DD PCB (FR-): t=.mm MICROSTRIP LINE WIDTH =.mm (Z =Ω) PCB SIZE=1.mm x 1.mm Caution: In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC
13 MEASUREMENT BLOCK DIAGRAM S parameter Measurements V DD VDD=.9V RF Input DUT RF Output Port1 Port Network Analyzer S parameter Measurement Block Diagram IIP Measurements freq1 Signal Generator Signal Generator freq Isolator Isolator Power. Comb. db Attenuator RF Input DUT RF Output IF and IM Measurement Block Diagram for IIP V DD Spectrum Analyzer - 1 -
14 Noise Figure Measurements Measuring instruments NF Analyzer : Agilent 97A, 97A Noise Source : Agilent A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 1 Average mode : Point Bandwidth : MHz Loss comp : off Tcold : setting the temperature of noise source (.1K) NF Analyzer (Agilent 97A, 97A) Noise Source (Agilent A) * Noise source and NF analyzer Input (Ω) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 97A, 97A) Noise Source (Agilent A) * Noise source and DUT, IN DUT OUT Input (Ω) Noise Source Drive Output DUT and NF analyzer are connected directly. Measurement Setup - 1 -
15 PACKAGE OUTLINE (FLP-A1) Unit:mm...1 Unit: mm Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights
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More information20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
More informationFeatures. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
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More informationFeatures. = +25 C, Vdd = +5V, Idd = 400mA [1]
v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
More informationData Sheet. AMMP to 32 GHz GaAs Low Noise Amplifier. Description. Features. Specifications (Vd=3.0V, Idd=65mA) Applications.
AMMP-6233 18 to 32 GHz GaAs Low Noise Amplifier Data Sheet Description Avago Technologies AMMP-6233 is a high gain, lownoise amplifier that operates from 18 GHz to 32 GHz. It has a 3 db noise figure, over
More informationFeatures. = +25 C, Vdd = +7V, Idd = 1340 ma [1]
Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Features Saturated
More informationFeatures. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
More informationFeatures. = +25 C, Vdd 1, 2, 3 = +3V
v.11 HMC6LC AMPLIFIER, 6-2 GHz Typical Applications The HMC6LC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military
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Data Sheet FEATURES Conversion gain: db typical Sideband rejection: dbc typical Output P1dB compression at maximum gain: dbm typical Output IP3 at maximum gain: dbm typical LO to RF isolation: db typical
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v.312 27-31. GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar & VSAT Test Equipment Functional Diagram Features Wide Gain Control
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9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
More information20 MHz to 500 MHz IF Gain Block ADL5531
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More informationFeatures. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V
v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
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Features: Low noise figure and high associated gain NF=0.42dB Typ., Ga=17.0dB Typ. @Vdd=3.0V, Idd=10mA, f=1.575ghz Description: Low Noise and High Gain On chip Bias supply circuit On chip ESD protection
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More informationFeatures. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
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