Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin Connections and Package Marking
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1 MGA W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features high gain, low operating current, low noise figure with good input and output return loss. Power consumption can be further reduced by reducing the quiescent bias current using two external bias resistors. The device can be easily matched at different frequencies to obtain optimal linearity performance at those frequencies. MGA is especially ideal for 5 wireless infrastructure application operating from DC to 2 GHz frequency range. With the high linearity, excellent gain flatness and low noise figure the MGA may be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receiver chain. This device uses Avago Technologies proprietary.25 m GaAs Enhancement mode PHEMT process. Pin Connections and Package Marking Vd YYWW XXXX TOP VIEW NC 14 Vctrl 15 Vbias 16 Features Very high linearity at low DC bias power [1] High Gain with good gain flatness ROHS compliant Good Noise Figure Halogen free Advanced enhancement-mode PHEMT Technology QFN 3X3 16-Lead standard package Lead-free MSL1 Specifications At, Vd = 5 V, Id = 68 ma 25 C OI P3 = 39.5 dbm Noise Figure = 1.9 db Gain = 2.6 db P1dB = 22.5 dbm IRL = 15.5 db, ORL = 15.5 db Note: 1. The MGA has a superior LFOM of 16.5 db. Linearity-Figure-of- Merit (LFOM) is the ratio of OIP3 to total DC bias power. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = V ESD Human Body Model = 3 V Refer to Avago Application Note A4R: Electrostatic Discharge, Damage and Control. NC 12 RFout 11 RFout 1 NC 9 Gnd 1 NC 2 NC 3 RFin 4 NC Vdd 8 NC 7 NC 6 NC 5 NC NC - not connected BOTTOM VIEW Notes: Package marking provides orientation and identification = Device Part Number YYWW = Work Week and Year of manufacturing XXXX = Last 4 digit of Lot Number Vbias Vctrl Biasing Network RFIN Figure 1. Simplified Application Circuit RFOUT
2 Table 1. MGA Absolute Maximum Rating [1] T A = 25 C Symbol Parameter Units Absolute Maximum V d, max Drain Voltage V 5.5 V bias, max Bias Voltage V 5.5 V ctrl, max Control Voltage V 5.5 P d Power Dissipation [2] mw 5 P in CW RF Input Power dbm 24 T j Junction Temperature C 15 T stg Storage Temperature C -65 to 15 T amb Ambient Temperature C -4 to 85 Thermal Resistance Thermal Resistance [3] (V d = 5. V, T c = 85 C) jc = 67. C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage 2. Source lead temperature is 25 C. Derate 14.9 mw/ C for T L > 13. C. 3. Thermal resistance measured using 15 C Infra-Red Microscopy Technique. Table 2. MGA Electrical Specification [1] T C = 25 C, V d = 5. V, unless otherwise noted Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. I ds Quiescent Current 45 MHz 15 MHz NF Noise Figure 45 MHz 15 MHz Gain Gain 45 MHz 15 MHz OIP3 [2, 4] Output Third Order Intercept Point 45 MHz 15 MHz LFOM [3] Linearity Figure of Merit 45 MHz 15 MHz P1dB Output Power at 1dB Gain Compression 45 MHz 15 MHz PAE Power Added Efficiency at P1dB 45 MHz 15 MHz IRL Input Return Loss 45 MHz 15 MHz ORL Output Return Loss 45 MHz 15 MHz ISOL Isolation 45 MHz 15 MHz ma 37 db db 18.5 dbm 37 dbm dbm 19.5 Notes: 1. Measurements obtained from test circuit and demoboard detailed in Figures 46 and 47 and Table OIP3 test condition: F1 F2 = 1 MHz, with input power of -12 dbm per tone measured at worst case side band. 3. LFOM is defined as LFOM = OIP3 (in dbm) P DC (in dbm). It is a measure of the linearity of an amplifier per unit of DC power consumed. 4. Demoboard tuned to best OIP3 with minimum over-temperature drift. % db db db
3 MGA Consistency Distribution Chart [1, 2] Figure 2. ; LSL = 37 ma, Nominal = 68 ma, USL = 83 ma Figure 3. ; Nominal = 1.9 db, USL = 2.7 db Figure 4. ; LSL = 18.5 db, Nominal = 2.6 db, USL = 21.5 db Figure 5. ; Nominal = 39.5 dbm, LSL = 37 dbm Figure 6. ; Nominal = 22.5 dbm, LSL = 19.5 dbm Notes: 1. Data sample size is 4 samples taken from 4 different wafers and 2 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. Measurements are made on production test board which represents a trade-off between optimal Gain, NF, OIP3 and P1dB. Circuit losses have been de-embedded from actual measurements. 3
4 MGA Typical Performance Data for 45 MHz T C = 25 C, V d = 5. V, I d = ma (Based on BOM for 45 MHz optimal linearity tuning in Table 3) Figure 7. OIP3 vs Pin and Temperature Pin (dbm) OIP3(dBm) Figure 8. OIP3 vs Frequency and Temperature 23 Gain (db) Input Return Loss Figure 9. Gain vs Frequency and Temperature Figure 1. IRL vs Frequency and Temperature Output Return Loss (db) Figure 11. ORL vs Frequency and Temperature Isola on (db) Figure 12. Isolation vs Frequency and Temperature 4
5 MGA Typical Performance Data for 45 MHz T C = 25 C, V d = 5. V, I d = ma (Based on BOM in Table 3, tuned for optimal linearity with over temperature) P1dB(dBm) Noise Figure(dB) Frequency(MHz) Figure 13. P1dB vs Frequency and Temperature Frequency(MHz) Figure 14. Noise Figure vs Frequency and Temperature Voltage (V) R1( ) Figure 15. Current vs Voltage and Temperature Figure 16. OIP3 and Quiescent Current with different R1 [1] OIP3 at R2= Idd at R2= Idd (m A) OIP3 at R1=1.2K Idd at R1=1.2K R2( ) Figure 17. OIP3 and Quiescent Current with different R2 [1] Note: 1. Vbias and Vctrl can be externally controlled by change external biasing resistors R1 = Rbias and R2 = Rctrl (as shown in Fig. 46). 5
6 MGA Typical Performance Data for 45 MHz T C = 25 C, V d = 5. V, I d = ma (Based on BOM in Table 3, tuned for optimal linearity with over temperature) P1dB (dbm) P1dB at R2=39 56 Idd at R2= R1( ) P1dB (dbm) P1dB at R1=1.2K Idd at R1=1.2K R2( ) Figure 18. P1dB and Quiescent Current with different R1 [1] Figure 19. P1dB and Quiescent Current with different R2 [1] Note: 1. Vbias and Vctrl can be externally controlled by change external biasing resistors R1 = Rbias and R2 = Rctrl (as shown in Fig. 46). 6
7 MGA Typical Performance Data for T C = 25 C, V d = 5. V, I d = 68 ma (Based on BOM in Table 3, tuned for optimal linearity with over temperature) Figure 2. OIP3 vs Pin and Temperature Pin (dbm) Figure 21. OIP3 vs Frequency and Temperature Gain (db) Input Return Loss Figure 22. Gain vs Frequency and Temperature Figure 23. IRL vs Frequency and Temperature Output Return Loss (db) Figure 24. ORL vs Frequency and Temperature Isola on (db) Figure 25. Isolation vs Frequency and Temperature 7
8 MGA Typical Performance Data for T C = 25 C, V d = 5. V, I d = 68 ma (Based on BOM in Table 3, tuned for optimal linearity with over temperature) P1dB(dBm) Noise Figure(dB) Frequency(MHz) Figure 26. P1dB vs Frequency and Temperature Figure 27. Noise Figure vs Frequency and Temperature Voltage (V) 38.5 OIP3 at R2= Idd at R2= R1( ) Figure 28. Current vs Voltage and Temperature Figure 29. OIP3 and Quiescent current with different R1 [1] OIP3 at R1= Idd at R1= R2( ) Figure 3. OIP3 and Quiescent current with different R2 [1] Note: 1. Vbias and Vctrl can be externally controlled by change external biasing resistors R1 = Rbias and R2 = Rctrl (as shown in Fig. 46). 8
9 MGA Typical Performance Data for T C = 25 C, V d = 5. V, I d = 68 ma (Based on BOM in Table 3, tuned for optimal linearity with over temperature) P1dB (dbm) P1dB at R2= Idd at R2= R1( ) P1dB (dbm) P1dB at R1= Idd at R1= R2( ) Figure 31. P1dB and Quiescent current with different R1 [1] Figure 32. P1dB and Quiescent current with different R2 [1] Note: 1. Vbias and Vctrl can be externally controlled by change external biasing resistors R1 = Rbias and R2 = Rctrl (as shown in Fig. 46). 9
10 MGA Typical Performance Data for 15 MHz T C = 25 C, V d = 5. V, I d = 5 ma (Based on BOM in Table 3, tuned for optimal linearity with over temperature) Figure 33. OIP3 vs Pin and Temperature Pin (dbm) OIP3 (db) Figure 34. OIP3 vs Frequency and Temperature Gain (db) Input Return Loss Figure 35. Gain vs Frequency and Temperature Figure 36. IRL vs Frequency and Temperature Output Return Loss (db) Figure 37. ORL vs Frequency and Temperature Isola on (db) Figure 38. Isolation vs Frequency and Temperature 1
11 MGA Typical Performance Data for 15 MHz T C = 25 C, V d = 5. V, I d = 5 ma (Based on BOM in Table 3, tuned for optimal linearity with over temperature) P1dB(dBm) Figure 39. P1dB vs Frequency and Temperature Noise Figure(dB) Figure 4. Noise Figure vs Frequency and Temperature OIP3 at R2= Idd at R2= R1( ) Figure 41. Current vs Voltage and Temperature Figure 42. OIP3 and Quiescent current with different R1 [1] OIP3 at R1= 1.8K 44 Idd at R1=1.8K R2( ) Figure 43. OIP3 and Quiescent current with different R2 [1] Note: 1. Vbias and Vctrl can be externally controlled by change external biasing resistors R1 = Rbias and R2 = Rctrl (as shown in Fig. 46). 11
12 MGA Typical Performance Data for 15 MHz T C = 25 C, V d = 5. V, I d = 5 ma (Based on BOM in Table 3, tuned for optimal linearity with over temperature) P1dB (dbm) P1dB at R2= Idd at R2= R1( ) P1dB(dBm) P1db at R1=1.8K 21.8 Idd at R1=1.8K R2( ) Figure 44. P1dB and Quiescent current with different R1 [1] Figure 45. P1dB and Quiescent current with different R2 [1] Note: 1. Vbias and Vctrl can be externally controlled by change external biasing resistors R1 = Rbias and R2 = Rctrl (as shown in Fig. 46). 12
13 Application Circuit Description and Layout Vdd C3 GND VDD RK_v3. R1 R2 Pin 16 Pin 15 Vbias Vctrl C2 L1 Pin 13 IN C11 R2 R1 L1 C3 C2 C1 C15 OUT Biasing Network C12 L2 C13 C14 RFIN C11 Pin 3 L2 Pin 11 Pin 1 C13 RFOUT AVAGO Technologies QFN3x3 Oct 21 Figure 46. Application Circuit Diagram Figure 47. Demoboard Table 3. Bill of Materials Tuned for optimal linearity performance at different frequencies Circuit Symbol Size Description Optimum linearity at 45 MHz Optimum linearity at Value Value Value Optimum linearity at 15 MHz Manufacturer C pf 5 pf 1 pf Murata C F 2.2 F 2.2 F Murata C pf 1 pf 1 pf Murata C pf 3.6 pf 1.8 pf Murata L nh 8.2 nh 3.3 nh Murata L2 [2] 42 NR 2.4 pf 1 pf Murata R1 [1] k k KOA R2 [1] KOA Notes: NR Not required in actual PCB design 1. R1 and R2 can be varied to bias Vbias and Vctrl which will provide flexibility to have the product operates at desirable Id, LFOM, and OIP3 drift across temperature also P1dB. 2. Capacitor is used at L2. 5 Bias T 5 Bias T 5 Bias T Vbias Vctrl Vd Biasing Network RF in RF out Note: 1. Measurements are conducted on.1 inch think ROGER 435. The input reference plane is at the end of the RFin pin and the output reference plane is at the end of the RFout pin as shown in Figure 48. Figure 48. Circuit to measure de-embedded S-parameters and Noise Parameter in Table 4 and 5. 13
14 Table 4. MGA Typical Scattering Parameters T C = 25 C, V d = 5. V, I d = 68 ma, Z o = 5 (Data is de-embedded to the RFin & RFout pins on package. Measurements were made with Bias-Tees at Vd, Vctrl and Vbias in Figure 48) Freq GHz 14 S11 S11 S11 S21 S21 S21 S12 S12 S12 S22 S22 S22 Mag. db Ang. Mag. db Ang. Mag. db Ang. Mag. db Ang. K Factor
15 MGA Stability T C = 25 C, V d = 5. V, I d = 58 ma, Z o = 5 (Data is de-embedded to the RFin & RFout pins. Measurements were made with Bias-T at Vd, Vctrl and Vbias in Figure 48) K Factor Frequency (GHz) Figure 49. K-Factor vs Frequency K Factor Table 5. MGA Typical Noise Parameters T C = 25 C, V d = 5. V, I d = 58 ma, Z o = 5 (Data is de-embedded to the RFin & RFout pins on package. Measurements were made with Bias-Tees at Vd, Vctrl and Vbias in Figure 48) Freq (GHz) F min (db) opt Mag opt Ga Ang R n /Z (db)
16 PCB Layout and Stencil Design Chamfer Chamfer.6 Chamfer ø PCB LAND PATTERN (TOP VIEW) 3.2 STENCIL OUTLINE Notes: 1. All dimensions are in milimeters 2. 4mil stencil thickness recommended COMBINED PCB & STENCIL LAYOUTS 16
17 Package Dimensions Pin 1 dot By marking 3. ±.1.2 Ref ±.5 Exp.DAP.4 ±.5 Pin #1 identification Chamfer.3 x ± YYWW XXXX.5 Bsc 1.55 ±.5 Exp.DAP.23 ± ± Ref. TOP VIEW SIDE VIEW BOTTOM VIEW Notes: 1. All dimensions are in milimeters. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash and metal burr. Part Number Ordering Information Part Number No. of Devices Container MGA BLKG 1 Antistatic Bag MGA TR1G 3 13 Tape/Reel 17
18 Device Orientation REEL USER FEED DIRECTION CARRIER TAPE YYWW XXXX YYWW XXXX YYWW XXXX USER FEED DIRECTION COVER TAPE TOP VIEW END VIEW Tape Dimensions 2.±.1 [1] 4.±.1 [2] 1.75±.1.3± ±.5 5.5±.1 [1] C L 3.3±.1 1.6±.1 12.±.3 R.3 Typical 1.55±.1 8.±.1 3.3±.1 Notes: 1. Measured from centerline of sprocket hole to centerline of pocket 2. Cumulative tolerance of 1 sprocket holes is ±.2 3. Other material available 4. All dimensions in millimeter unless otherwise stated 18
19 2 2 Reel Dimension 13 Reel 12 mm Width DATE CODE 12MM EMBOSSED LETTERING 16. mm HEIGHT x MIN..4 mm THICK. Ø329.±1. HUB Ø1.±.5 6 PS CPN MPN EMBOSSED LETTERING 7.5 mm HEIGHT EMBOSSED LINE (2x) 89. mm LENGTH LINES 147. mm AWAY FROM CENTER POINT 6 PS RECYCLE LOGO SEE DETAIL "X" ESD LOGO Ø16. FRONT VIEW ** * -. EMBOSSED LETTERING 7.5 mm HEIGHT Detail "X" Ø (MIN.) 1.5 (MIN.) 6 PS Ø1.±.5 Ø329.±1. BACK VIEW SLOT 5.±.5 (3x) R19.±.5 Ø12.3±.5(3x) 18.4 MAX.* For product information and a complete list of distributors, please go to our web site: Avago Technologies and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright Avago Technologies. All rights reserved. AV2-3264EN - April 29, 216
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ATF-2189 High Linearity Mode [1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies s ATF-2189 is a single-voltage high linearity, low noise E-pHEMT FET packaged
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ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies ATF 531P8 is a single-voltage high linearity, low noise E phemt housed
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More informationFeatures. = +25 C, Vdd = +10 V, Idd = 350 ma
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More informationMGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic
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7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
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AMMP-622 18 to 2 GHz GaAs High Linearity LNA in SMT Package Data Sheet Description Avago s AMMP-622 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier in a surface mount package.
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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.38 POWER AMPLIFIER, 2-2 GHz Typical
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