Data Sheet. ALM High Linearity MHz Variable Gain Amplifier. Description. Features. Typical Performances.

Transcription

1 ALM-2 High Linearity 1 27 MHz Variable Amplifier Data Sheet Description Avago Technologies ALM-2 is a high linearity variable-gain amplifier module for use in the 1-27MHz band. control is achieved using a single DC voltage input pin. High linearity is achieved through the use of Avago Technologies proprietary GaAs Enhancementmode phemt process 1. It is housed in a miniature 6. x 6. x 1. mm 2-pin Molded Chip On Board (MCOB) package. changes monotonically with gain control pin voltage. Input is fully matched. Output match can be tuned for optimal performance at a particular frequency band within the VGA operation frequency range using common RF board layout. The compact footprint coupled with high linearity and efficiency makes ALM-2 an ideal choice for Basestation transmitters and receivers and Temperature Compensation Circuitry applications. Component Image (6. x 6. x 1.) mm 2-lead MCOB AVAGO 2 WWYY XXXX Pin Configuration GND 1 Vdd1 GND GND GND GND Vdd Note: Package marking provides orientation and identification 2 = Device Code WWYY = Date Code identifies month and year of manufacturing XXXX = Last digit of assembly lot number 19 1 GND Features High Linearity at low bias current High max gain: 23. db typ High linearity performance: +. dbm at -6 dbc ACLR using dual-carrier W-CDMA input signal Fully-matched Ohm input and simple output match Low Built-in attenuator with monotonic response Variable range: 3 db typ GaAs E-pHEMT Technology [1] Small package size: 6. x 6. x 1. mm Typical Performances 21 V, 33 ma (typ) 23. db at minimum attenuation +. dbm output power (-6 dbc ACLR) using dualcarrier W-CDMA input signal with PAPR = 7. db. NF: max gain and min gain P1dB: 27. dbm Attenuator range: 3 db with Vc_att: ( V 3.3 V) Shutdown current (Vc1, Vc2 = V): < 3 A Applications Basestation Transmitter, Receiver and Temperature Compensation Circuits requiring continuously variable gain functionality Note: 1. Enhancement mode technology employs positive Vgs, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. RFIN Q1/Q2 Interstage GND GND Vc_att GND GROUND 9 1 Vc1 Vc GND Vddbias RFOUT GND GND GND Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = V ESD Human Body Model = V Refer to Avago Application Note AR: Electrostatic Discharge, Damage and Control.

2 Table 1. ALM-2 Absolute Maximum Rating [1] Symbol Parameter Units Absolute Maximum V dd,max Drain Voltage, RF output to ground V. V ctrl,max Control Voltage [] V. I ds,max Device Drain Current ma P d Power Dissipation [2] W 2.7 P in CW RF Input Power dbm 22 T j Junction Temperature C 1 T stg Storage Temperature C -6 to 1 Thermal Resistance Thermal Resistance [3] (V d =. V, I d = ma, T c = C) jc = 2 C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Ground Paddle temperature is. Derate mw/ C for T c > 9 C. 3. Thermal resistance measured using 1 C Infra-Red Microscopy Technique.. Vc1/Vc2 Vdd1/Vdd2. Table 2. Electrical Specifications T A =, Vdd1 = Vdd2 = VBias = total quiescent current of 33 ma, RF performance at 21 MHz, CW operation unless otherwise stated. Symbol Parameter and Test Condition Units Freq. Min. Typ. Max. Vdd Supply Voltage Idq_total Quiescent Supply Current ma Freq Operating Frequency Range MHz 1 27 Max Max (minimum attenuation) (1) db NF (minimum attenuation) db 2 OP1dB Output Power at 1dB Compression [1] dbm OIP3 Output Third Order Intercept Point [2] dbm ACLR ACLR at linear Pout = dbm with dual-carrier dbc W-CDMA input signal [1,3] Ilinear_total Total current draw at Plinear level ma S11 Input Return Loss, source db 21 S22 Output Return Loss, load db 21-1 S Reverse Isolation db 21 Atten attenuation range, Vc_att: ( V 3.3 V) db 3 Notes: 1. Measured with output match tuned to frequency as specified. See Table 3 for component values. 2. OIP3 test condition: F RF1 - F RF2 = 1 MHz with input power of - dbm per tone measured at worst side band. 3. Peak-to-average power ratio = 7. db. Measured on Agilent MXA N92A with low-noise option. Refer to Figure 77 for CCDF

3 ALM-2 Consistency Distribution Charts LSL USL LSL Figure 1. Idd_total at Vdd = V; LSL = 29 ma, Nominal = 33 ma, USL= 6 ma Figure 2. Max gain at 21 MHz; LSL = 22.2 db, Nominal = 23. db LSL USL Figure 3. OP1dB; LSL = 2.7 dbm, Nominal = 27. dbm Figure. ACLR (Dual-Carrier Signal) at dbm output power; Nominal = dbc, USL = -63. dbc 3

4 Typical DC Performance Plots T A =, Vdd = Vdd2 = VBias = 33 ma, RF performance tuned at 21 MHz using demoboard of Figure 71. CW operation unless otherwise stated. Dual Carrier Signal uses W-CDMA modulation with 7. db crest factor. Refer to Figure 77 for CCDF. Single Carrier Signal uses WCDMA Test Tone #1. Icatt (ma) C Vcatt (V) Figure. Ic_att Vs Vc_att Idd1 (A) Figure 6. Idd1 Vs Vc1 Vddbias = V, Vc2 = V, Vdd1 = Vdd2 = V, Vc_att = V - C Vc1 (V) Idd2 (A) Figure 7. Idd2 Vs Vc2 Vddbias = V, Vc1 = V, Vdd1 = Vdd2 = V, Vc_att = V - C Vc2 (V)

5 Typical 1 MHz RF Performance Plots Application circuit and build of material can be seen in Figure 7 and Table 3 respectively. S11 (db) Figure. S11 vs Freq at 1 MHz - C S22 (db) Figure 9. S22 vs Freq at 1 MHz - C S21 (db) Figure 1. S21 vs Freq at 1 MHz - C Vc_Att (V) Figure 11. & vs Vc_att at 1 MHz at Vc_Att (V) Figure. & vs Vc_att at 1 MHz at - C Vc_Att (V) Figure 13. & vs Vc_att at 1 MHz at 2 2 2

6 C Figure 1. vs Pout at 1 MHz OIP3 (dbm) C Pin (dbm) Figure 1. OIP3 vs Pin at 1 MHz Figure. ACLR (Dual Carrier Signal) vs Pout at 1 MHz - C Figure 17. ACLR (Single Carrier Signal) vs Pout at 1 MHz - C Figure 1. ACLR (Dual Carrier Signal) vs at 1 MHz - C Itotal (A) Figure 19. Idd_total vs Pout (Dual Carrier Signal) at 1 MHz - C

7 Typical 1 MHz RF Performance Plots Application circuit and build of material can be seen in Figure 7 and Table 3 respectively. S11 (db) Figure 2. S11 vs Freq at 1 MHz - C S22 (db) Figure 21. S22 vs Freq at 1 MHz - C S21 (db) Figure 22. S21 vs Freq at 1 MHz - C Figure 23. & vs Vc_att at 1 MHz at Figure 2. & vs Vc_att at 1 MHz at - C Figure 2. & vs Vc_att at 1 MHz at

8 C Figure 26. vs Pout at 1 MHz OIP3 (dbm) C Pin (dbm) Figure 27. OIP3 vs Pin at 1 MHz C Figure 2. ACLR (Dual Carrier Signal) vs Pout at 1 MHz Figure 29. ACLR (Single Carrier Signal) vs Pout at 1 MHz - C Figure 3. ACLR (Dual Carrier Signal) vs at 1 MHz - C Itotal (A) Figure 31. Idd_total vs Pout (Dual Carrier Signal) at 1 MHz - C

9 Typical 196 MHz RF Performance Plots Application circuit and build of material can be seen in Figure 7 and Table 3 respectively. S11 (db) Figure. S11 vs Freq at 196 MHz - C S22 (db) Figure 33. S22 vs Freq at 196 MHz - C S21 (db) Figure 3. S21 vs Freq at 196 MHz - C Figure 3. & vs Vc_att at 196 MHz at Figure. & vs Vc_att at 196 MHz at - C Figure 37. & vs Vc_att at 196 MHz at

10 C Figure 3. vs Pout at 196 MHz OIP3 (dbm) C Pin (dbm) Figure 39. OIP3 vs Pin at 196 MHz Figure. ACLR (Dual Carrier Signal) vs Pout at 196 MHz - C Figure 1. ACLR (Single Carrier Signal) vs Pout at 196 MHz - C Figure 2. ACLR (Dual Carrier Signal) vs at 196 MHz - C Itotal (A) Figure 3. Idd_total vs Pout (Dual Carrier Signal) at 196 MHz - C 1

11 Typical 21 MHz RF Performance Plots Application circuit and build of material can be seen in Figure 7 and Table 3 respectively. S11 (db) C Figure. S11 vs Freq at 21 MHz S22 (db) Figure. S22 vs Freq at 21 MHz - C S21 (db) Figure 6. S21 vs Freq at 21 MHz - C S11 (db) V 1 V 2 V 3 V 3. V Figure 7. S11 vs Freq at different Vc_att at 21 MHz at S22 (db) V 1 V 2 V Figure. S22 vs Freq at different Vc_att at 21 MHz at 3 V 3. V S21 (db) V 1 V 2 V 3 V 3. V Figure 9. S21 vs Freq at different Vc_att at 21 MHz at 11

12 Figure. & vs Vc_att at 21 MHz at Figure 1. & vs Vc_att at 21 MHz at - C Figure 2. & vs Vc_att at 21 MHz at C Figure 3. vs Pout at 21 MHz OIP3 (dbm) C Pin (dbm) Figure. OIP3 vs Pin at 21 MHz C Figure. ACLR (Dual Carrier Signal) vs Pout at 21 MHz

13 Figure 6. ACLR (Single Carrier Signal) vs Pout at 21 MHz - C Figure 7. ACLR (Dual Carrier Signal) vs at 21 MHz - C Itotal (A) Figure. Idd_total vs Pout (Dual Carrier Signal) at 21 MHz - C

14 Typical 26 MHz RF Performance Plots Application circuit and build of material can be seen in Figure 7 and Table 3 respectively S11 (db) -2 S22 (db) C Figure 9. S11/S22/S21 vs Freq at 26 MHz at Figure 6. S11/S22/S21 vs Freq at 26 MHz at - C - C S21 (db) C Figure 61. S11/S22/S21 vs Freq at 26 MHz at Figure 62. & vs Vc_att at 26 MHz at Figure 63. & vs Vc_att at 26MHz at - C Figure 6. & vs Vc_att at 26 MHz at

15 C Figure 6. vs Pout at 26 MHz OIP3 (dbm) C Pin (dbm) Figure 66. OIP3 vs Pin at 26 MHz Figure 67. ACLR (Dual Carrier Signal) vs Pout at 26 MHz - C Figure 6. ACLR (Single Carrier Signal) vs Pout at 26 MHz - C Figure 69. ACLR (Dual Carrier Signal) vs at 26 MHz - C Itotal(A) Figure 7. Idd_total vs Pout (Dual Carrier Signal) at 26 MHz - C

16 Application Circuit Description and Layout Vdd1 = + V L1 1.9 nh C2 C1 C1 C 2. pf.1 F L2 7. pf.1 F.6 nh ~7 ma ~27 ma Vdd2 = + V C F RFin C1 1. pf C3 7.pF C 7.pF L3 1. nh C19.3 pf L 1.9 nh C pf C1 RFout 7. pf C.1 F C C7 C9 7. pf 7. pf 7. pf C11 7. pf ma.1 ma.1 ma ma Vc_att Vc1 Vc2 Vddbias = + V 2. V. V Figure 71. Application circuit tuned for 21 MHz operation using 2 size external SMT components C3 RFIN ALM-2 VDD1S C C C6 VcATT C1 C2 L1 VC1 VDD1 C7 C VDD2S R1 VC2 C9 C1 VDD2 VdBIAS GND C17 C C1 L L3 C13 L C11 C GND RFOUT RO3 DK 3. H 1 mil W.7 mm G.9 mm JUNE '1 C1 Figure 72. Demo board diagram of application circuit for 21 MHz Notes: 1. The VGA is capable of wideband operation from 1-27 MHz. Optimum linearity and at different frequencies can be tuned by changing the values of L3, L, C13, C19 at the output match and L1, L2 at the supply lines. Table 3 below shows the optimum linearity tuning components. 2. Optimum linearity is achieved by varying Vc1 and Vc2. Typical current is as shown in the figure above. 3. If lower output power for the same linearity is desired, then the bias currents Idd1 and Idd2 can be reduced by reducing Vc1 and Vc2 respectively.

17 Recommended Bill of Materials Table 3. Component Values Description Circuit Symbol Freq (MHz) Size Value Part Number Manufacturer C1, C, C All 2.1 F GRM1F1C1ZA1E Murata C2 All 2 2. pf GJM1C1H2RCB1 Murata C3*, C, C, C7, C9, All 2 7. pf GJM1C1H7RDB1 Murata C11, C1*, C1 C6, C, C1 All 2 NOT USED C pf GJM1C1H3R3CB1 Murata pf GJM1C1H2RCB1 Murata 196 / pf GJM1C1H2R7CB1 Murata pf GJM1C1H2RCB1 Murata C17 All F GRM21BR61A22KA1L Murata C1 All 2 1. pf GJM1C1H1RCB1 Murata C19 1 / 196 / pf GJM1C1HR3BB Murata 1 / 26 2 NOT USED L nh 2CS-9NX_LU Coilcraft 1 / nh 2CSN6X_LU Coilcraft nh 2CS-1N9X_LU Coilcraft nh 2CS-1NX_LU Coilcraft L2 1 / 1 / 196 / 2.6 nh 2CSN6X_LU Coilcraft 21 / 26 L nh 2CS-2N2X_LU Coilcraft nh 2CS-1N9X_LU Coilcraft 196 / nh 2CS-1NX_LU Coilcraft 26 2 ohm RMC1/S-JPTH Kamaya L nh 2CS-2N2X_LU Coilcraft 1 /196 / nh 2CS-1N9X_LU Coilcraft nh 2CS-1NX_LU Coilcraft Note: * Blocking capacitor not required in actual application circuit. 17

18 Scattering Parameters Measurement Schematic Vdd1 = + V Vdd2 = + V L1 C2 C1 C1 C 2. pf.1 F L2 7. pf.1 F C F Reference Plane Reference Plane RFin RFout C 7.pF C.1 F C C7 C9 7. pf 7. pf 7. pf C11 7. pf Vc_att Vc1 Vc2 Vddbias = + V Figure 73. Scattering Parameters Measurement Schematic Table. Scattering Parameters Freq L1 L2 S11 S11 S21 S21 S S S22 S22 (MHz) (nh) (nh) (db) (ang) (db) (ang) (db) (ang) (db) (ang) / ohm ohm Vdd1 = + V Bias Tee Bias Tee Vdd2 = + V Reference Plane Reference Plane RFin RFout C 7.pF C.1 F C C7 C9 7. pf 7. pf 7. pf C11 7. pf 1 Vc_att Vc1 Vc2 Vddbias = + V Figure 7. Broadband Scattering Parameters Measurement Schematic

19 Broadband Scattering Parameters T A =, Vdd = 39 ma, Vc_att = V. Table. Broadband Scattering Parameters Freq S11 S11 S21 S21 S S S22 S22 (GHz) (db) (ang) (db) (ang) (db) (ang) (db) (ang) K-Factor

20 CCDF of Dual Carrier Signal [1] Figure 7. CCDF Note: 1. W-CDMA modulation with 7. db crest factor. Package Dimensions PIN 1 6. ±.1 1. ±.1 3. PIN #1 IDENTIFICATION CHAMFER.3 X.3 AVAGO 2 WWYY XXXX. Bsc 6. ± TOP VIEW SIDE VIEW BOTTOM VIEW Dimensions are in millimeters. 2

21 Land Pattern and Stencil Opening Dimensions LAND PATTERN STENCIL OPENING COMBINATION OF LAND PATTERN & STENCIL OPENING Notes: 1. All dimensions are in MM 2..1 mm or mil stencil thickness is recommended Device Orientation REEL CARRIER TAPE AVAGO 2 WWYY XXXX AVAGO 2 WWYY XXXX AVAGO 2 WWYY XXXX AVAGO 2 WWYY XXXX USER FEED DIRECTION COVER TAPE 21

22 Tape Dimensions Dimensions are in millimeters. Part Number Ordering Information Part Number No. of Devices Container ALM-2 -BLKG 1 Antistatic Bag ALM-2-TR1G 3 13 Tape/Reel 22

23 2 2 Reel Dimension 13 Reel mm Width DATE CODE MM EMBOSSED LETTERING. mm HEIGHT x MIN.. mm THICK. Ø9.±1. HUB Ø1.±. 6 PS CPN MPN EMBOSSED LETTERING 7. mm HEIGHT EMBOSSED LINE (2x) 9. mm LENGTH LINES 17. mm AWAY FROM CENTER POINT 6 PS RECYCLE LOGO SEE DETAIL "X" ESD LOGO Ø. FRONT VIEW 11.9.**. +2.* -. EMBOSSED LETTERING 7. mm HEIGHT Detail "X" Ø (MIN.) 1. (MIN.) 6 PS Ø1.±. Ø9.±1. BACK VIEW For product information and a complete list of distributors, please go to our web site: SLOT.±. (3x) R19.±. Ø.3±.(3x) 1. MAX.* Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright Avago Technologies. All rights reserved. AV2-31EN - September 19, 211