Data Sheet. 3Tx. ADA-4743 Silicon Bipolar Darlington Amplifier. Description

Transcription

1 ADA-7 Silicon Bipolar Darlington Amplifier Data Sheet Description Avago Technologies ADA-7 is an economical, easy-touse, general purpose silicon bipolar RFIC gain block amplifiers housed in a -lead SC-7 (SOT-) surface mount plastic package which requires only half the board space of a SOT-1 package. The Darlington feedback structure provides inherent broad bandwidth performance, resulting in useful operating frequency up to 2. GHz. This is an ideal device for small-signal gain cascades or IF amplification. ADA-7 is fabricated using Avago s HP2 silicon bipolar process, which employs a double-diffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high ft and high NPN breakdown (2 GHz ft at V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. SOT- Surface Mount Package Pin Connections and Package Marking RFout & Vd GND Tx GND RFin Note: Top View. Package marking provides orientation and identification. Features Small Signal gain amplifier Operating frequency DC 2. GHz Unconditionally stable Ohms input & output Flat, Broadband Frequency Response up to 1 GHz Operating Current: to 8 ma Industry standard SOT- package Lead-free option available Specifications 9 MHz,.8V, ma (typ.) 1. db associated gain 17.1 dbm P 1dB 2. dbm OIP.2 db noise figure VSWR < 2 throughput operating frequency Single supply, typical I d = ma Applications Cellular/PCS/WLL base stations Wireless data/wlan Fiber-optic systems ISM Typical Biasing Configuration Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1B) Refer to Avago Application Note AR: Electrostatic Discharge Damage and Control. T = Device Code x = Date code character identifies month of manufacture. R c = V cc - V d I d R c C bypass V CC = V RFC C block RF input C block Tx V d =.8 V RF output

2 ADA-7 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum I d Device Current ma 9 P diss Total Power Dissipation [2] mw 7 P in max. RF Input Power dbm 2 T j Channel Temperature C 1 T STG Storage Temperature C - to 1 θ jc Thermal Resistance [] C/W 1 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Ground lead temperature is 2 C. Derate.1 mw/ C for TL >89 C.. Junction-to-case thermal resistance measured using 1 C Liquid Crystal Measurement method. ADA-7 Electrical Specifications T A = 2 C, Zo=Ω, Pin = -2 dbm, I d = ma (unless specified otherwise) Symbol Parameter and Test Condition: Frequency Units Min. Typ. Max. Std. Dev. I d = ma, Zo = Ω V d Device Voltage I d = ma V..8. Gp Power Gain ( S MHz db 1. 9 MHz [1,2] ΔGp Gain Flatness 1 to 9 MHz db..1 to 2 GHz 1. F db db Bandwidth GHz VSWR in Input Voltage Standing Wave Ratio.1 to GHz 1.7:1 VSWR out Output Voltage Standing Wave Ratio.1 to GHz 1.:1 NF Ω Noise Figure 1 MHz db MHz [1,2].2.1 P 1dB Output Power at 1dB Gain Compression 1 MHz dbm MHz [1,2] 17.1 OIP Output rd Order Intercept Point 1 MHz [] dbm. 9 MHz [1,2,] 2. DV/dT Device Voltage Temperature Coefficient mv/ C Typical value determined from a sample size of parts from wafers. 2. Measurement obtained using production test board described in the block diagram below.. I) 9 MHz OIP test condition: F1 = 9 MHz, F2 = 9 MHz and Pin = -2 dbm per tone. II) 1 MHz OIP test condition: F1 = 1 MHz, F2 = 1 MHz and Pin = -2 dbm per tone. Input Ohm Transmission (. db loss) DUT Ohm Transmission including Bias (. db loss) Output Block diagram of 9 MHz production test board used for V d, Gain, P 1dB, OIP, and NF measurements. Circuit losses have been de-embedded from actual measurements. 2

3 Product Consistency Distribution Charts at 9 MHz, I d = ma GAIN (db) Figure 1. Gain ma. LSL=1, Nominal=1., USL= V d (V) Figure 2. V d ma. LSL=., Nominal=.8, USL=. 1. Statistics distribution determined from a sample size of parts taken from different wafers. 2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits. ADA-7 Typical Performance Curves (at 2 C, unless specified otherwise) GAIN (db) 1 P 1dB (dbm) 1 OIP (dbm) Figure. Gain vs. Frequency at I d = ma. 1 2 Figure. P 1dB vs. Frequency at I d = ma Figure. OIP vs. Frequency at I d = ma. NF (db) Figure. NF vs. Frequency at Id= ma C 2 C 8 C 1 2 V d (V) Figure 7. I d vs. V d and Temperature. GAIN (db) C 2 C 8 C Figure 8. Gain vs. Id and Temperature at 9 MHz.

4 ADA-7 Typical Performance Curves (at 2 C, unless specified otherwise), continued 2 1 P 1dB (dbm) 1 - C 2 C 8 C OIP (dbm) C 2 C 8 C NF (db) C 2 C 8 C Figure 9. P 1dB vs. I d and Temperature at 9 MHz Figure 1. OIP vs. I d and Temperature at 9 MHz Figure 11. NF vs. I d and Temperature at 9 MHz. GAIN (db) P 1dB (dbm) OIP (dbm) Figure 12. Gain vs. I d and Frequency (GHz). Figure 1. P 1dB vs. I d and Frequency (GHz). Figure 1. OIP vs. I d and Frequency (GHz) NF (db) IRL (db) Id= ma Id= ma Id=8 ma ORL (db) Id= ma Id= ma Id=8 ma Figure 1. NF vs. I d and Frequency (GHz) Figure 1. Input Return Loss vs. I d and Frequency Figure 17. Output Return Loss vs. I d and Frequency.

5 ADA-7 Typical Scattering Parameters, T A = 2 C, I d = ma Freq. S 11 S 21 S 12 S 22 K GHz Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S-parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead.

6 ADA-7 Typical Scattering Parameters, T A = 2 C, I d = ma Freq. S 11 S 21 S 12 S 22 K GHz Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S-parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead.

7 ADA-7 Typical Scattering Parameters, T A = 2 C, I d = 8 ma Freq. S 11 S 21 S 12 S 22 K GHz Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S-parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. 7

8 Ordering Information Part Number No. of Devices Container ADA-7-TR1 7 Reel ADA-7-TR2 1 1 Reel ADA-7-BLK 1 antistatic bag ADA-7-TR1G 7 Reel ADA-7-TR2G 1 1 Reel ADA-7-BLKG 1 antistatic bag Note: For lead-free option, the part number will have the character G at the end. Package Dimensions Outline SOT- (SC7 -lead) 1. (.1) BSC Recommended PCB Pad Layout for Avago s SC7 L/SOT- Products 1. (.1) 1. (.9) HE E. (.2) 2. (.79) 1.1 (.) BSC D b1 1.1 (.).9 (.) A A2 Dimensions in mm (inches) b A1 L C DIMENSIONS (mm) SYMBOL E D HE A A2 A1 b b1 c L MIN MAX NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating.. Dimensions are exclusive of mold flash & metal burr.. All specifications comply to EIAJ SC7.. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form.. Package surface to be mirror finish. 8

9 Device Orientation REEL mm CARRIER TAPE 8 mm Tx Tx Tx Tx USER FEED DIRECTION TOP VIEW END VIEW COVER TAPE Tape Dimensions For Outline T P Po D P2 E C F W t1 (CARRIER TAPE THICKNESS) D1 Tt (COVER TAPE THICKNESS) 1 MAX. Ko 1 MAX. Ao Bo CAVITY PERFORATION CARRIER TAPE COVER TAPE DISTANCE DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) Ao Bo Ko P D1 D Po E W t1 C Tt F P2 2. ±.1 2. ± ±.1. ± ±.1. ± ± ±.1.2 ±.1. ±. 2. ±..9 ±..9 ±..7 ±..17 ± ±..9 ± ± ±..18 ±.2.79 ±.2 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright Avago Technologies. All rights reserved. Obsoletes 989-7EN AV2-9EN - June 8, 212