ATF Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package

Transcription

1 ATF-3189 Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies s ATF-3189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a high-linearity, low noise, medium-power amplifier. Its operating frequency range is from MHz to 6 GHz. ATF-3189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All devices are 1% RF and DC tested. Pin Connections and Package Marking G 3GX S S S Top View Package marking provides orientation and identification: 3G = Device Code x = Month code indicates the month of manufacture. D = Drain S = Source G = Gate D D S G Bottom View Features Single voltage operation High Linearity and Gain Low Noise Figure Excellent uniformity in product specifications SOT 89 standard package Point MTTF > years [2] MSL-1 and lead-free Tape-and-Reel packaging option available Specifications 2 GHz, 4.V, 13 ma (Typ.) 4. dbm Output IP3 23. dbm Output Power at 1dB gain compression.8 db Noise Figure. db Gain 46% PAE at P1dB LFOM [3] 12.7 db Applications Front-end LNA Q1 and Q2, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure Driver Amplifier for WLAN, WLL/RLL and MMDS applications General purpose discrete E-pHEMT for other high linearity applications 1. Enhancement mode technology employs a single positive V gs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.

2 ATF-3189 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum V ds Drain Source Voltage [2] V 7 V gs Gate Source Voltage [2] V - to 1. V gd Gate Drain Voltage [2] V - to 1. I ds Drain Current [2] ma I gs Gate Current ma 2 P diss Total Power Dissipation [3] W 1. P in max. RF Input Power dbm +24 T ch Channel Temperature C T stg Storage Temperature C -6 to Thermal Resistance [2,4] ch-b = 7 C/W 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Board (package belly) temperature T B is C. Derate 14. mw/ C for T B > 8 C. 4. Channel-to-board thermal resistance measured using C Liquid Crystal Measurement method. ATF-3189 Electrical Specifications T A = C, DC bias for RF parameters is Vds = 4.V and Ids = 13 ma unless otherwise specified. Symbol Parameters and Test Conditions Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.V, Ids = 13 ma V.6 Vth Threshold Voltage Vds = 4.V, Ids = 8 ma V. Ids Drain to Source Current Vds = 4.V, Vgs = V µa 3.7 Gm Transconductance Vds = 4.V, Gm = Ids/ Vgs; mmho 6 Vgs = Vgs1 Vgs2 Vgs1 =.6V, Vgs2 =.V Igss Gate Leakage Current Vds = V, Vgs = - µa NF Noise Figure f=9 MHz db.8 f=2. GHz db f=2.4 GHz db 1. G Gain [1] f=9 MHz db 17.2 f=2. GHz db f=2.4 GHz db. OIP3 Output 3rd Order Intercept Point [1] f=9 MHz dbm 42. f=2. GHz dbm f=2.4 GHz dbm 38.6 P1dB Output 1dB Compressed [1] f=9 MHz dbm 21.7 f=2. GHz dbm 23. f=2.4 GHz dbm 23.2 PAE Power Added Efficiency f=9 MHz % 33.8 f=2. GHz % 46. f=2.4 GHz % 49. ACLR Adjacent Channel Leakage Offset BW = MHz dbc -4. Power Ratio [1,2] Offset BW = 1 MHz dbc Measurements at 2 GHz obtained using production test board described in Figure ACLR test spec is based on 3GPP TS.141 V.3.1 (22-6) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 214 MHz - Pin = -8 dbm - Channel Integrate Bandwidth = 3.84 MHz 2

3 Input Input Matching Circuit Γ_mag=.74 Γ_ang= DUT Output Matching Circuit Γ_mag=.4 Γ_ang=12. Output Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3, P1dB, PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. Product Consistency Distribution Charts [1,2] Stdev=.86 Stdev= FREQUENCY Std +3 Std FREQUENCY Std +3 Std OIP3 (dbm) Figure 2. 2 GHz,, 13 ma. LSL = 36 dbm, Nominal = 4 dbm NF (db) Figure 3. 2 GHz,, 13 ma. USL = 1. dbm, Nominal =.84 dbm. Stdev=.22 Stdev= FREQUENCY Std +3 Std FREQUENCY Std +3 Std Gain (db) Figure 4. 2 GHz,, 13 ma. LSL = 14 dbm, Nominal =. dbm, USL = 17 dbm P1dB (dbm) Figure. 2 GHz,, 13 ma. Nominal = 23 dbm. 1. Distribution data sample size is samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 3

4 Gamma Load and Source at Optimum OIP3 Tuning Conditions The device s optimum OIP3 measurements were determined using a Maury Load Pull System at 4.V, 13 ma quiesent bias. Typical Gammas at Optimum OIP3 [1] Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE (GHz) Mag Ang (deg) Mag Ang (deg) (dbm) (db) (dbm) (%) Note: 1. Typical describes additional product performance information that is not covered by the product warranty V 2 1.8V.7V.6V.V Vds (V) Figure 6. Typical IV Curve. 4

5 ATF-3189 Typical Performance Curves (at C unless specified otherwise) Tuned for Optimal OIP3 at Vd = 4.V, Ids = 13 ma OIP3 (dbm) 3 OIP3 (dbm) 3 OIP3 (dbm) 3 V V V Figure 7. OIP3 vs. Ids and Vds at 9 MHz Figure 8. OIP3 vs. Ids and Vds at 2 GHz Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz GAIN (db) 16 GAIN (db) 16 GAIN (db) V V 4 2 V Figure 1. Small Signal Gain vs. Ids and Vds at 9 MHz Figure 11. Small Signal Gain vs. Ids and Vds at 2 GHz Figure 12. Small Signal Gain vs. Ids and Vds at 3.9 GHz OIP3 (dbm) 3 V GAIN (db) V 2 1 Gain_ Pout_ PAE_ Figure 13. OIP3 vs. Ids and Vds at.8 GHz Figure 14. Small Signal Gain vs. Ids and Vds at.8 GHz Figure. Small Signal Gain/Pout/PAE vs. Pin at Vds= and Freq = 9 MHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.

6 ATF-3189 Typical Performance Curves (at C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.V, Ids = 13 ma. 2 1 Gain_ Pout_ PAE_ Gain_V Pout_V PAE_V Gain_ Pout_ PAE_ Figure 16. Small Signal Gain/Pout/PAE vs. Pin at Vds= and Freq = 9 MHz Figure 17. Small Signal Gain/Pout/PAE vs. Pin at Vds=V and Freq = 9 MHz Figure 18. Small Signal Gain/Pout/PAE vs. Pin at Vds= and Freq = 2 GHz Gain_ Pout_ PAE_ Gain_V Pout_V PAE_V Gain_ Pout_ PAE_ Figure 19. Small Signal Gain/Pout/PAE vs. Pin at Vds= and Freq = 2 GHz Figure 2. Small Signal Gain/Pout/PAE vs. Pin at Vds=V and Freq = 2 GHz Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds= and Freq = 3.9 GHz Gain_ Pout_ PAE_ Gain_V Pout_V PAE_V Gain_ Pout_ PAE_ Figure 22. Small Signal Gain/Pout/PAE vs. Pin at Vds= and Freq = 3.9 GHz Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds=V and Freq = 3.9 GHz Figure 24. Small Signal Gain/Pout/PAE vs. Pin at Vds= and Freq =.8 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 6

7 ATF-3189 Typical Performance Curves (at C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.V, Ids = 13 ma. 2 1 Gain_ Pout_ PAE_ Gain_V Pout_V PAE_V Figure. Small Signal Gain/Pout/PAE vs. Pin at Vds = and Freq =.8 GHz Figure 26. Small Signal Gain/Pout/PAE vs. Pin at Vds = V and Freq =.8 GHz. ATF-3189 Typical Performance Curves, continued Tuned for Optimal OIP3 at Vd = 4.V, Ids = 13 ma, Over Temperature and Frequency OIP3 (dbm) C C 8 C Figure 27. OIP3 vs. Temperature and Frequency at optimum OIP3. GAIN (db) C C 8 C Figure 28. Gain vs. Temperature and Frequency at optimum OIP C C 8 C Figure 29. PAE vs. Temperature and Frequency at optimum OIP3. P1dB (dbm) C C 8 C Figure. P1dB vs. Temperature and Frequency at optimum OIP3. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 7

8 ATF-3189 Typical Performance Curves (at C unless specified otherwie), continued Tuned for Optimal OIP3 at Vd = 4.V, Ids = 13 ma OIP3 (dbm) 3 GAIN (db) 14 V Figure 31. OIP3 vs. Ids and Vds at 2.4 GHz V Figure 32. Small Signal Gain vs. Ids and Vds at 2.4 GHz Gain_ Pout_ PAE_ Gain_ Pout_ PAE_ Figure 33. Small Signal Gain/Pout/PAE vs. Pin at Vds and Freq = 2.4 GHz Figure 34. Small Signal Gain/Pout/PAE vs. Pin at Vds and Freq = 2.4 GHz. 2 1 Gain_V Pout_V PAE_V Figure 3. Small Signal Gain/Pout/PAE vs. Pin at Vds V and Freq = 2.4 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 8

9 ATF-3189 Typical Scattering and Noise Parameters at C, V DS = 4.V, I DS = 18 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db Freq GHz Fmin db Gamma Opt Rn/ Ga Mag Ang db MSG/MAG & S21 2 (db) MSG S21 MAG Figure 36. MSG/MAG & S21 2 vs. and Frequency at 4.V/18 ma. 1. F min values at 2 GHz and higher are based on measurements while the F min below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 9

10 ATF-3189 Typical Scattering and Noise Parameters at C, V DS = 4.V, I DS = 13 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db F min values at 2 GHz and higher are based on measurements while the F min below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 1 Freq GHz Fmin db Gamma Opt Rn/ Ga Mag Ang db MSG/MAG & S21 2 (db) MSG S21 MAG Figure 37. MSG/MAG & S21 2 vs. and Frequency at 4.V/13 ma.

11 ATF-3189 Typical Scattering and Noise Parameters at C, V DS = 4.V, I DS = 7 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db Freq GHz Fmin db Gamma Opt Rn/ Ga Mag Ang db MSG/MAG & S21 2 (db) MSG S21 MAG Figure 38. MSG/MAG & S21 2 vs. and Frequency at 4.V/7 ma. 1. F min values at 2 GHz and higher are based on measurements while the F min below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 11

12 ATF-3189 Typical Scattering and Noise Parameters at C, V DS =.V, I DS = 13 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db F min values at 2 GHz and higher are based on measurements while the F min below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 12 Freq GHz Fmin db Gamma Opt Rn/ Ga Mag Ang db MSG/MAG & S21 2 (db) MSG S21 MAG Figure 39. MSG/MAG & S21 2 vs. and Frequency at.v/13 ma.

13 ATF-3189 Typical Scattering and Noise Parameters at C, V DS = 3.V, I DS = 13 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db Freq GHz Fmin db Gamma Opt Rn/ Ga Mag Ang db Figure 4. MSG/MAG & S21 2 vs. and Frequency at 3.V/13 ma. 1. F min values at 2 GHz and higher are based on measurements while the F min below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & S21 2 (db) MSG S21 MAG

14 Device Models, PCB Layout and Stencil Device Refer to Avago s Web Site: Ordering Information Part Number No. of Devices Container ATF-3189-TR1 13 Reel ATF-3189-BLK 1 Anti-static bag SOT 89 Package Dimensions D D1 A C H E E1 L #1 #2 #3 B1 B e e1 #3 #2 #1 BOTTOM COMMON SYMBOL A B B1 C D D1 E E1 e e1 H L MIN BSC 3. BSC DIMENSIONS Millimeters NOM BSC 3. BSC MAX BSC 3. BSC MIN BSC.118 BSC..3 DIMENSIONS Inches NOM BSC.188 BSC MAX BSC.188 BSC Dimensioning and tolerancing per ANSI.Y14.M Controlling dimension: Millimeter convertions to inches are not necessarily exact. 3. Dimension B1, 2 places. 14

15 Device Orientation REEL CARRIER TAPE 3GX 3GX 3GX 3GX USER FEED DIRECTION COVER TAPE Tape Dimensions φ1.±.1 (.9+.4) 8.±.1 (.3±.4) 4.±.1 (.7±.4) 2.±. (.69±.4) 1.7±.1 (.69±.4) + 12.±.-.1 ( ).±. (.217±.2) + φ1.±. (.9+.1) 8.292±.2 (.1±.8) 1.8±.1 (.79±.4) 6 MAX 4.8±.1 (.189±.4) 4.4±.1 (.1732±.4) Dimensions in mm (inches) For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright -29 Avago Technologies. All rights reserved. Obsoletes EN AV2-1EN - November 6, 29