Data Sheet. IAM High Linearity Integrated GaAs Mixer. Description. Applications. Features

Transcription

1 IAM 9356 High Linearity Integrated GaAs Mixer Data Sheet Description Avago Technologies IAM9356 is a high linearity GaAs FET Mixer using.5um enhancement mode phemt technology. This device houses in a 3x3 LP package. The IAM9356 has a builtin LO buffer amplifier and an IF amplification stage that serve as an ideal solution for reducing board space and delivering excellent high IIP3, gain and isolation with a low LO drive power. The device is designed with a differential configuration to provide good noise immunity. The LO port is 5 ohm matched and can be driven differential or single ended. An interstage match is introduced between the mixer and amplifier stage to allow device tuning at the desired RF and LO frequency. The interstage match can be a simple low pass, high pass or intermediate frequency trap. The amplifier output port is 2 ohm matched and fully differential. The simple matching at the RF port provides for optimum input return loss, noise figure and IIP3 performance. The IAM9356 is ideally suited for frequency down conversion for base station radio card receiver, microwave link receiver, MMDS, modulation and demodulation for receiver and general purpose resistive FET mixer, which require high linearity. All devices are % RF and D tested. Applications Frequency down converter for base station radio card, microwave link transceiver, and MMDS Modulation and demodulation for receiver General purpose resistive FET mixer for other high linearity applications Features D ma (Typ.) RF =.9 GHz, Pin RF = dbm; LO =.7 GHz, Pin LO = dbm; IF = 2 MHz unless otherwise specified High Linearity: 23. dbm IIP3(typ) onversion Gain: 9.4 db typical Low Noise Figure:.6 db Wide band operation: 43 MHz RF & LO input 7 3 MHz IF output Fully differential or single ended operation High PdB: 9.3 db typical onsistent RF performance over LO Power Low current consumption: 5V@ ma typical Excellent uniformity in product specifications 3mm x 3mm x.9mm LP package MTTF > 3 years [] MSL and Leadfree.

2 Pin onnections and Package Marking Interstage Match +VDD MIX_OUT+ RF+ IFA_IN+ pf Amplifier LO+ LO Buffer ohm LO Mixer pf +VDD IF+ IF MIX_OUT RF IFA_IN Top View Note: Package marking provides orientation and identification M2 = Device ode X = Month code indicates the month of manufacture Interstage Match. Absolute Maximum Ratings [] Symbol Parameter Units Absolute maximum V D Supply Voltage [2] V 7 Pin RF W RF Input Power [2] dbm 3 Pin LO W LO Input Power [2] dbm 8 T H hannel Temperature 5 T STG Storage Temperature 65 to 5 q ch_b Thermal Resistance [4] /W 39 Notes:. Operation of this device above any one of these parameters may cause permanent damage. 2. Determined at D quiescent conditions and T A = Board (package belly) temperature T B is 25. Derate 25 mw/ for T B > hanneltoboard thermal resistance measured using Infra Red Imaging Method and 5 o Liquid rystal Measurement method. 2. Product onsistency Distribution harts [5,6] frequency Stdev=. Std + Std frequency Stdev =. Std + Std frequency Stdev =. Std + Std Id Figure. ID (ma) [7] Nominal =.2mA Figure 2. GAIN (db) [8] Nominal = 9.4dB Figure 3. IIP3 (dbm) [8] Nominal = 23.dBm

3 3. IAM9356 Electrical Specifications [6,8] T A = 25 o, D = 5V, RF Freq =.9GHz, Pin RF = dbm, LO Freq =.7GHz, Pin LO = dbm (unless otherwise specified) Symbol Parameter and Test ondition Units Min. Typ Max. Id [7] Device urrent ma G onversion Gain db IIP3 [8] Output Third Order Intercept Point dbm NF SSB Noise Figure db.6 PdB Output Power at db Gain ompression dbm 9.3 RL RF RF Port Return Loss db 2. RL LO LO Port Return Loss db 2. RL IF IF Port Return Loss db. ISOL LR LORF Isolation db 26. ISOL LI LOIF Isolation db 2. ISOL RL RFIF Isolation db 32. Notes: 5. Distribution data sample size is 5 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements were made on a production test board, which represents a tradeoff between optimal Gain, IIP3, NF, PdB and isolation. Board losses of.db at the RF input and IF amplifier output have been compensated. Balun loss of.57db which was obtained from the Toko s supplied sparameter file is also compensated. The total IF amplifier output loss is.67db. 7. The device current is measured without LO signal. At LO=dBm, the current reduces by around 6 to 7mA. 8. Gain, PdB, isolation and return loss test conditions: F RF =.9GHz, F LO =.7GHz, F IF = 2MHz, Pin RF = dbm, Pin LO = dbm. IIP3 test condition: F RF =.9GHz, F RF2 =.89GHz, F LO =.7GHz, Pin RF = dbm, Pin LO = dbm. 4. IAM9356 Typical Performance [9,] T A = 25 o, D = 5V, RF Freq =.9GHz, Pin RF = dbm, LO Freq =.7GHz (unless otherwise specified) nh nh Ohm pf.pf.pf nh RF LO +.nh.nh Interstage Match pf Balun Transformer Toko BF DB IF.pF LO.nH pf nh Interstage Match nh Ohm pf.pf.pf nh Figure 4. IAM9356 demoboard schematic optimally tuned at F RF =.9GHz and F LO =.7GHz

4 Id (ma) LO Power(dBm) Figure 5. urrent vs. LO Power and Temperature onversion Gain (db) Figure 6. onversion Gain vs. LO Power and Temperature IIP (dbm) Figure 7. IIP3 vs. LO Power and Temperature PdB (dbm)..... Figure 8. PdB vs. LO Power and Temperature NF (db) Figure 9. Noise Figure vs. LO Power and Temperature Isolation_LO_IF (db) Figure. LOIF Isolation vs. LO Power and Temperature

5 Isolation_RF_IF (db) Isolation_LO_RF (db) LO Power(dBm) Figure. RFIF Isolation vs. LO Power and Temperature Figure 2. LORF Isolation vs. LO Power and Temperature onversion Gain (db) RF Frequency (GHz) LO= dbm LO=dBm LO=dBm Figure 3. onversion Gain vs. RF Frequency and LO Power at fixed IF frequency [] IIP (dbm) LO= dbm LO=dBm LO=dBm RF Frequency (GHz) Figure 4. IIP3 vs. RF Frequency and LO Power at fixed IF frequency [] Isolation_RF_IF (db) RF Frequency (GHz) LO=dBm LO=dBm LO=dBm Figure 5. RFIF Isolation vs. RF Frequency and LO Power at fixed IF frequency Isolation_LO_IF (db) LO= dbm LO=dBm LO=dBm LO Frequency (GHz) Figure 6. LOIF Isolation vs. LO Frequency and LO Power at fixed IF frequency

6 Isolation_LO_RF (db) LO Frequency (GHz) LO=dBm LO=dBm LO=dBm Figure 7. LORF Isolation vs. LO Frequency and LO Power at fixed IF frequency IF_IRL (db) IF Frequency (MHz) Figure 8. IF Return Loss vs. IF Frequency LO_IRL (db) LO Frequency (GHz) Figure 9. LO Return Loss vs. LO Frequency RF_IRL (db) RF Frequency (GHz) Figure 2. RF Return Loss vs. RF Frequency Notes: 9. Results shown are based on Figure 4, which is optimally tuned for optimum conversion loss, IIP3, isolation and noise figure.. Balun loss of.57 2 MHz have been deembedded into the IF Amplifier loss.. LO is low side injected for 2MHz IF frequency.

7 5. IAM9356 Typical Harmonic Suppresion Table [2,3] LO Harmonics RF Harmonics > >9 >9 > >9 >9 4 >9 >9 >9 >9 >9 >9 5 >9 >9 >9 >9 >9 >9 Figure 2. Harmonic Suppresion Table Notes: 2. The harmonic suppression table shows the spurious signals present due to the mixing of the RF and LO at down conversion mode. 3. Test conditions a. RF dbm b. LO dbm c. RF and LO Intermodulation Harmonics are referenced to the signal level produced by the down converted IF signal at 2MHz at the IF amplifier output d. LO Harmonics are referenced to the signal level of the LO signal at.7ghz at the IF amplifier output. 6. IAM9356 Pin Description Pin Name Description, 2 IFA_IN+ / IFA_IN IF Amplifier inputs. This is the signal output from the Mixer/IF Amplifier interstage match. (See product application note) 2, RF+ / RF RF differential signal input. Simple matching is required for good RF return loss. (See product application note) 3, MIX_OUT+ / MIX_OUT Signal at mixer output.this signal will be fed into the Mixer/IF Amplifier interstage match. (See product application note) 4,9, 5 GND Ground connection. For normal operation, all electrical grounds must be connected together. 5 VDD D Power supply for the mixer circuit. 6, 7 LO+ / LO 5 Ohm Local oscillator input. The local oscillator can be driven differential or single ended. 8 N No contact. 3, 6 IF + / IF 2 Ohm differential amplifier output. A 4: balun is required to convert the differential output to single ended. (See product application note) 4 VDD2 D Power supply for the IF amplifier circuit.

8 PB layout and Stencil Design LP 3x3 Package Dimensions INDEX AREA (D/2 X E/2) D D 2 E 2 k D2 e D2 2 E2 2 E E2 Top View e 2 Bottom View A A A3 SEATING PLANE Side View PAKAGE GL 3X3.5 REF. A D D2 E E2 e A A3 k MIN NOM BS..2.2 REF. DIMENSIONS ARE IN MILLIMETERS MAX

9 Device Orientation REEL USER FEED DIRETION OVER TAPE ARRIER TAPE Tape Dimensions.3±.5.55±.5 2.±. [] 4.±. [2].75±. 5.5±. [] L 3.3±..6±. 2.±.3 R.3 Typical.55±. 8.±. 3.3±. Note: I. Measured from centerline of sprocket hole to centerline of pocket. II. umulative tolerance of sprocket hole is ±.2. III. Measured from centerline of sprocket hole to centerline of pocket. IV. Other material available. V. All dimension in millimeter unless otherwise stated.

10 Part Number Ordering Information Part Number No. Of Devices ontainer IAM9356TR 7 Reel IAM9356TR2 5 3 Reel IAM9356BLK Antistatic Bag For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. opyright 26 Avago Technologies Pte. All rights reserved EN March 29, 26