Data Sheet. MGA-565P8 20 dbm P sat. High Isolation Buffer Amplifier. 1Bx. Features. Description. Specifications. Applications. Simplified Schematic

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1 MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high gain, and consistent output power. It is a GaAs MMIC, fabricated using Avago Technologies cost effective, reliable enhancement mode PHEMT (Pseudomorphic High Electron Mobility Transistor) [1] process. This device is housed in the LPCC 2x2 mm package. This package offers good thermal dissipation and RF characteristics. MGA-6P8 features a saturated power of dbm (with dbm input power) and reverse isolation in excess of db at 2 GHz. The saturated output power can be set between 9 dbm and dbm using an external resistor, with a corresponding adjustment in current consumption. Notes: 1. Enhancement mode technology employs a single positive V gs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Conform to JEDEC reference outline MO229 for DRP-N Pin Connections and Package Marking Pin 8 GND Pin 7 (RFout/VD1) Pin 6 (VD2) Pin (VD3) Pin 1 (Thermal/RF Gnd) Bottom View Pin 1 GND Pin 2 (RFin) Pin 3 GND Pin 4 GND Pin 8 Features Up to 3. GHz operating frequency 2:1 VSWR input and output at 2GHz Small package size: 2. x 2. x.7 mm LPCC [3] MSL-1 and lead-free Tape-and-reel packaging option available 2 GHz, V d = V, P in = dbm P sat = dbm I dsat = 67 ma Isolation = 42 db Small Signal Gain = 22 db Applications VCO buffer amplifier for Cellular/PCS or other wireless infrastructures Simplified Schematic RFin LO 1, 3, 4, 8 Rbias Vd Id RFout Pin 2 Pin 3 1Bx Pin 7 Pin 6 GND Pin 4 Pin Top View Note: Package marking provides orientation and identification 1B = Device Code x = Data code indicates the month of manufacture. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class ) Refer to Avago Application Note A4R: Electrostatic Discharge Damage and Control.

2 MGA-6P8 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum V d DC Supply Voltage V 8 P diss Total Power Dissipation [2] mw 448 P in max. RF Input Power (Vd = V) dbm T CH Channel Temperature C T STG Storage Temperature C -6 to Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Board (package belly) temperature T B is 2 C. Derate 11 mw/ C for T B > 9 C. 3. Channel-to-board thermal resistance measured using C Liquid Crystal Measurement method. θ ch_b Thermal Resistance [3] C/W 91 ESD (Human Body Model) V ESD (Machine Model) V 3 Electrical Specifications T A = 2 C, Frequency = 2 GHz, R bias = Ω (unless specified otherwise) Symbol Parameter and Test Condition Units Min. Typ. Max. P sat Saturated Power at dbm input Vd = V [1] dbm 18. Vd = 3V dbm 17 I dsat Saturation Current Vd = V [1] ma 8 67 Vd = 3V ma 4 ISL [1] Reverse Isolation db 42 Gain Small Signal Gain Vd = V [1] db Vd = 3V I ds Small Signal Current (P in = - dbm) Vd = V [1] ma Vd = 3V 27 RL [1] Return Loss Input db -8 Output - Notes: 1. Typical value determined from a sample size of parts from 3 wafers. 2. Measurement obtained using production test board described in the block diagram below. Circuit losses have been de-embedded from actual measurements. pf + _ V R bias Ohm 6 12 nh 2 Buffer Amplifier 7 22 pf 22 pf pf Figure 1. Production Test Circuit Schematic at 2 GHz. 2

3 [1, 2] Product Consistency Distribution Charts at 2 GHz 16 Cpk = 1. Std. Dev. = Cpk = 1.2 Std. Dev. = GAIN (db) Figure 2. Gain Distribution. LSL =. db, USL = 23. db Psat (dbm) Figure 3. Psat Distribution. LSL = 18. dbm, USL = Cpk = 1.12 Std. Dev. = Cpk = 1.3 Std. Dev. = Idsat (ma) Figure 4. Idsat Distribution. LSL = 8. dbm, USL = 78. dbm ISOLATION (db) Figure. Isolation Distribution. LSL = 42. db, USL = 6. db. Notes: 1. Statistical distribution determined from a sample size of parts from 3 wafers. 2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits. 3

4 MGA-6P8 Typical Performance Curves (at 2 C, 2 GHz, R bias = Ω, unless specified otherwise) P out (dbm) C 8 C - C P out (dbm) C 8 C - C ISOLATION (db) P in (dbm) Figure 6. P out vs. P in, V d = 3V P in (dbm) Figure 7. P out vs. P in, Vd = V RF INPUT (dbm) Figure 8. Isolation vs P in, Vd = 3V ISOLATION (db) RF INPUT (dbm) Figure 9. Isolation vs. P in, V d = V. 4

5 MGA-6P8 Typical Performance Curves (R bias = Ω, temperature variation) 24 P sat (dbm) C, 3V 8 C, 3V -4 C, 3V P sat (dbm) C, V 8 C, V -4 C, V I dsat (ma) C, 3V 8 C, 3V -4 C, 3V Figure. P sat vs. Frequency. (P in = dbm, V d = 3V) Figure 11. P sat vs. Frequency. (P in = dbm, V d = V) Figure 12. I dsat vs. Frequency. (P in = dbm, V d = 3V) I dsat (ma) C, V 8 C, V -4 C, V GAIN (db) C, 3V 8 C, 3V -4 C, 3V GAIN (db) C, V 8 C, V -4 C, V Figure 13. I dsat vs. Frequency. (P in = dbm, V d = V) Figure 14. Gain vs. Frequency. (P in = - dbm, V d = 3V) Figure. Gain vs Frequency. (P in = - dbm, V d = V)

6 MGA-6P8 Typical Performance Curves (R bias = Ω, temperature variation), continued 48 2 C, 3V 8 C, 3V -4 C, 3V 48 2 C, V 8 C, V -4 C, V 3 2 ISOLATION (db) ISOLATION (db) nd HARMONICS (dbc) 2 C, 3V 8 C, 3V -4 C, 3V Figure 16. Isolation vs. Frequency. (P in = - dbm, V d = 3V) Figure 17. Isolation vs. Frequency. (P in = - dbm, V d = V) Figure 18. Second Harmonics vs. Frequency. (P in = dbm, V d = 3V) 2nd HARMONICS (dbc) C, V 8 C, V -4 C, V Ids (ma) C, 3V 8 C, 3V -4 C, 3V Ids (ma) C, V 8 C, V -4 C, V Figure 19. Second Harmonics vs. Frequency. (P in = dbm, V d = V) Figure. I ds vs. Frequency. (P in = - dbm, V d = 3V) Figure 21. I ds vs. Frequency. (P in = - dbm, V d = V) 6

7 MGA-6P8 Typical Performance Curves (at 2 C, 2 GHz, unless specified otherwise) P sat (dbm) 3V V I dsat (ma) 3 3V V GAIN (db) 3V V R bias (Ohm) Figure 22. P sat vs. R bias, P in = dbm for V d = 3V and V R bias (Ohm) Figure 23. I dsat vs. R bias, P in = dbm for V d = 3V and V R bias (Ohm) Figure 24. Gain vs. R bias, P in = - dbm for V d = 3V and V. ISOLATION (db) V V R bias (Ohm) Figure 2. Isolation vs. R bias, P in = - dbm for V d = 3V and V. I ds (ma) V V R bias (Ohm) Figure 26. I ds vs. R bias, P in = - dbm for V d = 3V and V. 7

8 MGA-6P8 Typical Scattering Parameters (at 2 C, V d = V, I d = 3 ma, R bias = Ω) Freq. S 11 S 21 S 12 S 22 K GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang

9 MGA-6P8 Typical Scattering Parameters (at 2 C, V d = 3V, I d = ma, R bias = Ω) Freq. S 11 S 21 S 12 S 22 K GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang

10 Device Models Refer to the Avago Technologies Web Site Ordering Information Part Number No. of Devices Container MGA-6P8-TR1 3 7 Reel MGA-6P8-TR2 13 Reel MGA-6P8-BLK antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 P pin1 pin1 D 1 8 E1 R e 2 3 1BX 7 6 E 4 L b Bottom View Top View A A1 A2 A Side View End View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 L e P L MIN DIMENSIONS ARE IN MILLIMETERS NOM REF BSC.2.4 REF MAX

11 PCB Land Patterns and stencil Design Pin 1.2 Pin PCB Land Pattern Stencil Outline Drawing Combined PCB and Stencil Layouts Device Orientation REEL 4 mm 8 mm 1BX 1BX 1BX 1BX CARRIER TAPE USER FEED DIRECTION COVER TAPE 11

12 Tape Dimensions D P P P 2 E W F + + D 1 t 1 T t Max K Max A B DESCRIPTION SYMBOL SIZE (mm) SIZE (inches) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B K P D ±. 2.3 ±. 1. ±. 4. ± ±.4.91 ±.4.39 ±.2.7 ± PERFORATION DIAMETER PITCH POSITION D P E 1. ±. 4. ±. 1.7 ±..6 ±.4.7 ±.4.69 ±.4 CARRIER TAPE WIDTH THICKNESS W t ± ±.4.24 ±.2. ±.8 COVER TAPE WIDTH TAPE THICKNESS C.4 ±. T t.62 ±.1. ±.4.2 ±.4 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 2 3. ±. 2. ±..138 ±.2.79 ±.2 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright -9 Avago Technologies. All rights reserved. Obsoletes EN AV2-39EN - April 14, 9