Data Sheet. 2Tx. ADA-4643 Silicon Bipolar Darlington Amplifier. Description. Features. Specifications. Applications. Surface Mount Package
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1 ADA- Silicon Bipolar Darlington Amplifier Data Sheet Description Avago Technologies ADA- is an economical, easy-touse, general purpose silicon bipolar RFIC gain block amplifiers housed in a -lead SC-7 (SOT-) surface mount plastic package which requires only half the board space of a SOT-1 package. The Darlington feedback structure provides inherent broad bandwidth performance, resulting in useful operating frequency up to 2. GHz. This is an ideal device for small-signal gain cascades or IF amplification. ADA- is fabricated using Avago s HP2 silicon bipolar process, which employs a double-diffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high f T and high NPN breakdown (2 GHz f T at V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. Surface Mount Package SOT- Pin Connections and Package Marking Features Small Signal gain amplifier Operating frequency DC 2. GHz Unconditionally stable Ohms input & output Flat, Broadband Frequency Response up to 1 GHz Operating Current: 2 to ma Industry standard SOT- package Lead-free option available Specifications 9 MHz,. V, ma (typ.) 17 db associated gain 1. dbm P 1dB 28. dbm OIP db noise figure VSWR < 2.2 throughput operating frequency Single supply, typical I d = ma Applications Cellular/PCS/WLL base stations Wireless data/wlan Fiber-optic systems ISM Typical Biasing Configuration R c = V cc V d I d R c C bypass V CC = V RFout & Vd GND 2Tx GND RFin RF input C block 2Tx RFC V d =. V C block RF output Note: Top View. Package marking provides orientation and identification. 2T = Device Code x = Date code character identifies month of manufacture. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Mode (Class 1B) Refer to Avago Application Note AR: Electrostatic Discharge, Damage and Control.
2 ADA- Absolute Maximum Ratings [1] Symbol Parameter Units Absolute Maximum I d Device Current ma 7 P diss Total Power Dissipation [2] mw 27 P in max. RF Input Power dbm 18 T j Channel Temperature C T STG Storage Temperature C - to jc Thermal Resistance [] C/W Operation of this device above any one of these parameters may cause permanent damage. 2. Ground lead temperature is 2 C. Derate. mw/ C for TL >9 C.. Junction-to-case thermal resistance measured using C Liquid Crystal Measurement method. ADA- Electrical Specifications T A = 2 C, Zo =, Pin = -2 dbm, I d = ma (unless specified otherwise) Symbol Parameter and Test Condition: I d = ma, Zo = Frequency Units Min. Typ. Max. Std. Dev. V d Device Voltage I d = ma V.2..9 Gp Power Gain ( S 21 ) 2 MHz 9 MHz [1,2] db Gp Gain Flatness to 9 MHz.1 to 2 GHz 1. db. 1.8 db dbm 1.7 dbm 29. F db db Bandwidth GHz.2 VSWR in Input Voltage Standing Wave Ratio.1 to GHz 2.:1 VSWR out Output Voltage Standing Wave Ratio.1 to GHz 1.:1 NF Noise Figure MHz.9 9 MHz [1,2]. P 1dB Output Power at 1dB Gain Compression MHz 9 MHz [1,2] 1. OIP Output rd Order Intercept Point MHz [] 9 MHz [1,2] 28. DV/dT Device Voltage Temperature Coefficient mv/ C Typical value determined from a sample size of parts from wafers. 2. Measurement obtained using production test board described in the block diagram below.. I) 9 MHz OIP test condition: F1 = 9 MHz, F2 = 9 MHz and Pin = -2 dbm per tone. II) MHz OIP test condition: F1 = MHz, F2 = MHz and Pin = -2 dbm per tone Input Ohm Transmission (. db loss) DUT Ohm Transmission including Bias (. db loss) Output Block diagram of 9 MHz production test board used for V d, Gain, P 1dB, OIP, and NF measurements. Circuit losses have been de-embedded from actual measurements. 2
3 Product Consistency Distribution Charts at 9 MHz, I d = ma GAIN (db) V d (V) Figure 1. Gain ma. LSL = 1., Nominal = 17, USL = 18. Figure 2. V d ma. LSL =.2, Nominal =., USL =.9 1. Statistics distribution determined from a sample size of parts taken from different wafers. 2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.
4 ADA- Typical Performance Curves (at 2 C, unless specified otherwise) GAIN (db) P1dB (dbm) 1 2 FREQUENCY (GHz) Figure. Gain vs. Frequency at I d = ma. 1 2 FREQUENCY (GHz) Figure. P 1dB vs. Frequency at I d = ma. 2 OIP (dbm) 2 1 NF (db) 1 2 FREQUENCY (GHz) Figure. OIP vs. Frequency at I d = ma FREQUENCY (GHz) Figure. NF vs. Frequency at I d = ma. Id (ma) C 2 C 8 C 1 2 V d (V) Figure 7. Id vs. V d and Temperature. GAIN (db) C 1 2 C 8 C Figure 8. Gain vs. I d and Temperature at 9 MHz.
5 ADA- Typical Performance Curves (at 2 C, unless specified otherwise), continued 2 P1dB (dbm) C 2 C 8 C Figure 9. P 1dB vs. I d and Temperature at 9 MHz. OIP (dbm) C 2 C 8 C 2 7 Figure. OIP vs. I d and Temperature at 9 MHz. NF (db) C 1 2 C 8 C 2 7 Figure 11. NF vs. I d and Temperature at 9 MHz. GAIN (db) Figure 12. Gain vs. I d and Frequency (GHz) P1dB (dbm) OIP (dbm) Figure 1. P 1dB vs. I d and Frequency (GHz). 2 7 Figure 1. OIP vs. I d and Frequency (GHz).
6 ADA- Typical Performance Curves (at 2 C, unless specified otherwise), continued NF (db) IRL (db) I d = 27 ma I d = ma I d = ma I d = ma 2 7 Figure 1. NF vs. I d and Frequency (GHz) FREQUENCY (GHz) Figure 1. Input Return Loss vs. I d and Frequency (GHz). - ORL (db) - -1 I d = 27 ma -2 I d = ma I d = ma I d = ma FREQUENCY (GHz) Figure 17. Output Return Loss vs. I d and Frequency (GHz).
7 ADA- Typical Scattering Parameters, T A = 2 C, I d = 27 ma Freq. GHz S 11 S 21 S 12 S 22 Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S-parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. K 7
8 ADA- Typical Scattering Parameters, T A = 2 C, I d = ma Freq. GHz S 11 S 21 S 12 S 22 Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S-parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. K 8
9 ADA- Typical Scattering Parameters, T A = 2 C, I d = ma Freq. GHz S 11 S 21 S 12 S 22 Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S-parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. K 9
10 ADA- Typical Scattering Parameters, T A = 2 C, I d = ma Freq. GHz S 11 S 21 S 12 S 22 Mag. Ang. db Mag. Ang. Mag. Ang. Mag. Ang S-parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. K
11 Ordering Information Part Number No. of Devices Container ADA--TR1 7 Reel ADA--TR2 1 Reel ADA--BLK antistatic bag ADA--TR1G 7 Reel ADA--TR2G 1 Reel ADA--BLKG antistatic bag Note: For lead-free option, the part number will have the character G at the end. Package Dimensions Outline SOT- (SC7 -lead) 1. (.1) BSC Recommended PCB Pad Layout for Avago s SC7 L/SOT- Products 1. (.9) 1. (.1) HE E. (.2) 2. (.79) D b1 1.1 (.) BSC 1.1 (.).9 (.) A A2 Dimensions in mm (inches) b A1 L C DIMENSIONS (mm) SYMBOL E D HE A A2 A1 b b1 c L MIN MAX NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating.. Dimensions are exclusive of mold flash & metal burr.. All specifications comply to EIAJ SC7.. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form.. Package surface to be mirror finish. 11
12 Device Orientation REEL TOP VIEW mm END VIEW USER FEED DIRECTION COVER TAPE CARRIER TAPE 8 mm Tape Dimensions For Outline T P D P 2 P E C F W t 1 (CARRIER TAPE THICKNESS) D 1 T t (COVER TAPE THICKNESS) MAX. K MAX. A B CAVITY PERFORATION DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION A B K P D 1 D P E 2. ±. 2. ±. 1.2 ±.. ± ±.. ±. 1.7 ±..9 ±..9 ±..7 ±..17 ± ±..9 ±. CARRIER TAPE WIDTH THICKNESS W t ± ±.8 COVER TAPE WIDTH TAPE THICKNESS C. ±. T t.2 ± ±. DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 2. ±. 2. ±..18 ±.2.79 ±.2 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright Avago Technologies. All rights reserved. Obsoletes 989-7EN AV2-98EN - June 8, 212
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