MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
|
|
|
- Julian Hubbard
- 5 years ago
- Views:
Transcription
1 MAAL GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 2 GHz Broadband Match Integrated ESD Protection RoHS* Compliant and 26 C Reflow Compatible Functional Block Diagram N/C GND RFout / Vdd GND Description The MAAL-4 is a high dynamic range single stage MMIC LNA with excellent linearity and low noise figure designed for operation from.1 to 3. GHz. The LNA is packaged in an RoHS compliant SOT-363 package and requires no external matching components. This MMIC has an integrated active bias circuit allowing direct connection to +3. V supply and minimizing variation over temperature and process. The bias current can be set with an external resistor to allow the user to customize the current value to fit the application. The MAAL-4 offers less than 1 db noise figure and 34 dbm OIP3 at 2 GHz. The broadband match and single supply operation makes this LNA easy to use and simplifies its implementation while maintaining excellent performance. The low thermal resistance and integrated ESD protection significantly enhances the quality, reliability and ruggedness of this product. RFin Vbias Pin Configuration 1 Pin No. Pin Name Description 1 N/C No Connection 2 GND Ground 3 RF IN RF Input 4 V BIAS Bias Voltage GND Ground 6 RF OUT RF Output 1. It is recommended that all N/C pins be grounded. Ordering Information 2,3 Part Number Package MAAL-4- bulk quantity MAAL-4-TR3 tape and reel MAAL-4-1SMB evaluation board (1 MHz ~ 3. GHz) 2. Reference Application Note M for reel size information. 3. All sample boards include loose parts. * Restrictions on Hazardous Substances, European Union Directive /9/EC. 1 North America Tel: Europe Tel: India Tel: China Tel:
2 MAAL GHz Typical Performance 4, : V DD = 3. V, I DD = 6 ma, I BIAS = 8 ma, ºC Parameter Units Frequency (F) GHz Gain (S) db Output IP3 (OIP3) dbm Output P1dB (P1dB) dbm Input Return Loss (S) db Output Return Loss (S) db Noise Figure (NF) db Typical Performance 4, : V DD =. V, I DD = 6 ma, I BIAS = 8 ma, ºC Parameter Units Frequency (F) GHz Gain (S) db Output IP3 (OIP3) dbm Output P1dB (P1dB) dbm Input Return Loss (S) db Output Return Loss (S) db Noise Figure (NF) db Typical values presented in the above table were obtained by measurements using RF probes in a ohm system.. Pout = dbm, Tone Spacing = 1 MHz Electrical Specifications 6,7 : 2 GHz (T = C, V DD = 3 V, Z = ) Parameter Units Min. Typ. Max. Small Signal Gain (S) db..3 - Output Intercept Point (OIP3) dbm Output P1dB dbm Quiescent Current (Idd) ma Noise Figure (NF) db Unless otherwise specified, the specifications are guaranteed at room temperature in a M/A-COM Technology Solutions test fixture. 7. Typical values presented in the above table are based on data from multiple wafer lots and evaluation board MAAL-4-1SMB. 2 North America Tel: Europe Tel: India Tel: China Tel:
3 MAAL GHz Absolute Maximum Ratings 8,9 Parameter Supply Voltage (V DD ) Current (Idq) Bias Current (Ibias) Power Dissipation (Pdis) RF Input Power (Pin) Absolute Max. +. V 1 ma + dbm Storage Temperature (Tstg) to + ºC Operating Temperature (Ta) -4 to +8 ºC Junction Temperature ºC Thermal Resistance ESD (HBM) Moisture Sensitivity Level ma 6 mw ºC/W Class 1A MSL1 8. Exceeding any one or combination of these limits may cause permanent damage to this device. 9. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. Component Values Ref Designator Description C1, C4, C 1 nf 42 Capacitor C6 C9 L2 L3 or R1 1 1 nf 42 Capacitor 1 µf Tantalum Capacitor Size C 82 nh 42 Inductor Please refer to Rbias Vs I DQ plot to select the appropriate R1 value C2, C3, C7, C8, L1, L3 DNP 1. Vbias can be connected separate of V DD to control the drain current. When Vbias is connected directly either a resistor is used to drop the voltage down from 3V, or if the exact bias voltage (~2V) is applied, then an inductor L3 can be used. Evaluation Board Schematic Evaluation Board (MAAL-4-1SMB) 3 North America Tel: Europe Tel: India Tel: China Tel:
4 MAAL GHz Typical Performance: R BIAS vs. Current IDQ vs. R 3 V mA 66.3mA 6.7mA 49.8mA 44.mA 39.7mA 3.8mA 32.7mA 29.9 ma V IDQ vs. R V mA 8 V mA mA 6 4.mA 48.9mA mA IDQ represents the total current of drain current (I DD ) and bias current (I BIAS ) combined. The resistor (R BIAS ) is connected between pin 4 (V BIAS ) and pin 6 (RF out / V DD ). Typical Performance : Total Current vs. Pout vs. Voltage IDQ = 3 ma Ibias = 3V Ibias = 4V Ibias = V Vdd = 3V Vdd = 4V Vdd = V IDQ = 6 ma Ibias = 3V Ibias = 4V Ibias = V Vdd = 3V Vdd = 4V Vdd = V North America Tel: Europe Tel: India Tel: China Tel:
5 MAAL GHz Typical Performance Curves : 3V, 3 ma (over temperature) Input Return Loss p Output Return Loss -1-1 S + C S +8 C S -4 C - -2 S + C S +8 C S -4 C Gain S + C S +8 C S -4 C Noise Figure NF + C NF +8 C NF -4 C OIP OIP3 + C OIP3 +8 C OIP3-4 C P1dB 2 1 P1dB + C P1dB +8 C P1dB -4 C North America Tel: Europe Tel: India Tel: China Tel:
6 MAAL GHz Typical Performance Curves : 3V, 6 ma (over temperature) Input Return Loss Output Return Loss -1-1 S + C S +8 C S -4 C - -2 S + C S +8 C S -4 C Gain S + C S +8 C S -4 C Noise Figure NF + C NF +8 C NF -4 C OIP OIP3 + C OIP3 +8 C OIP3-4 C P1dB 2 1 P1dB + C P1dB +8 C P1dB -4 C 6 North America Tel: Europe Tel: India Tel: China Tel:
7 MAAL GHz Typical Performance Curves : V, 3 ma (over temperature) Input Return Loss Output Return Loss -1-1 S + C S +8 C S -4 C - -2 S + C S +8 C S -4 C Gain S + C S +8 C S -4 C Noise Figure NF + C NF +8 C NF -4 C OIP OIP3 + C OIP3 +8 C OIP3-4 C P1dB 2 1 P1dB + C P1dB +8 C P1dB -4 C 7 North America Tel: Europe Tel: India Tel: China Tel:
8 MAAL GHz Typical Performance Curves : V, 6 ma (over temperature) Input Return Loss Output Return Loss -1-1 S + C S +8 C S -4 C - -2 S + C S +8 C S -4 C Gain S + C S +8 C S -4 C Noise Figure NF + C NF +8 C NF -4 C OIP OIP3 + C OIP3 +8 C OIP3-4 C P1dB 2 1 P1dB + C P1dB +8 C P1dB -4 C. Graphs were generated using evaluation board MAAL-4-1SMB. 8 North America Tel: Europe Tel: India Tel: China Tel:
9 MAAL GHz Typical S-Parameters Reverse Isolation Gain DB( S(2,1) ) DB(GMax()) Output Return Loss Input Return Loss GHz.9 GHz 2..2 GHz 3. GHz.1 GHz Swp Max 3GHz GHz GHz GHz.9 GHz.1 GHz Swp Max 3GHz Swp Min. GHz Swp Min. GHz. S-Parameters files in S2P format are available for download at macomtech.com. 9 North America Tel: Europe Tel: India Tel: China Tel:
10 MAAL GHz Evaluation Board 1 MHz RF OUT RF IN C4 C1 L4 R1 L2 C C9 Vcc Typical Performance: 3 V, 6 ma Parameter Units Frequency GHz.1 Gain db. Output IP3 dbm 31. Output P1dB dbm. Input Return Loss db -. Output Return Loss db -. Noise Figure db 1.8 Component Values Ref Designator Description C1, C4 1 nf 42 Capacitor C 1 nf 42 Capacitor C9 L2 L4 R1 1 uf Tantalum Capacitor Size C nh 63 Inductor 68 nh 42 Inductor Refer to Rbias Vs Idd plot C2, C3, C6, C7, C8, L1, L3 DNP. Pout = dbm, Tone Spacing = 1 MHz S-Parameters using 1 MHz evaluation board S S S North America Tel: Europe Tel: India Tel: China Tel:
11 MAAL GHz Evaluation Board 2 MHz RF OUT RF IN C4 C1 L4 R1 L2 C C9 Vcc Typical Performance: 3 V, 6 ma Parameter Units Frequency GHz.2 Gain db. Output IP3 dbm 33. Output P1dB dbm.4 Input Return Loss db -2. Output Return Loss db -. Noise Figure db 1.1 Component Values Ref Designator Description C1, C4 1 nf 42 Capacitor C 1 nf 42 Capacitor C9 L2 L4 R1 1 uf Tantalum Capacitor Size C nh 63 Inductor nh 42 Inductor Refer to Rbias Vs Idd plot C2, C3, C6, C7, C8, L1, L3 DNP. Pout = dbm, Tone Spacing = 1 MHz S-Parameters using 2 MHz evaluation board S 1-2 S 7. S North America Tel: Europe Tel: India Tel: China Tel:
12 MAAL GHz Typical Noise Parameters: Vd = 3 V, ºC, Z = Id = 2 ma Freq (GHz) NF min Mag. Ang. R n/ NF Id = 3 ma Freq (GHz) NF min Mag. Ang. R n/ NF Id = 6 ma Freq (GHz) NF min Mag. Ang. R n/ NF North America Tel: Europe Tel: India Tel: China Tel:
13 MAAL GHz Typical Noise Parameters: Vd = V, ºC, Z = Id = 2 ma Freq (GHz) Id = 3 ma Id = 6 ma NF min Mag. Ang. R n/ NF Freq (GHz) NF min Mag. Ang. R n/ NF Freq (GHz) NF min Mag. Ang. R n/ NF North America Tel: Europe Tel: India Tel: China Tel:
14 MAAL GHz Lead-Free SC7-6LD (SOT-363) Reference Application Note M38 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is 1% matte tin over copper. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 2 devices. North America Tel: Europe Tel: India Tel: China Tel:
MAAL Low Noise Amplifier GHz Rev. V2. Functional Block Diagram. Features. Description. Pin Configuration. Ordering Information 1,2
MAAL. - 1.6 GHz Rev. V2 Features Low Noise Figure Excellent Input Return Loss Single Voltage Bias 3 V Integrated Active Bias Circuit Current Adjustable 2-8 ma with an External Resistor High Linearity,
RF OUT / N/C RF IN / V G
MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.
MAAM Driver Amplifier GHz Rev. V3. Functional Schematic. Features. Description. Pin Configuration 3,4. Ordering Information 1,2
MAAM-11139 7. - 33. GHz Rev. V3 Features 3 Stage for 8/ GHz Bands 1 db Gain dbm Output Third Order Intercept (OIP3) dbm Output P1dB Variable Gain with Adjustable Bias Lead-Free mm Lead PQFN Package RoHS*
RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
MACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3
Features Integrated Directional Coupler Low Insertion Loss:.5 db @ Min. detectable power: -15 dbm @ Dynamic range: 45 db @ Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm 6-Lead TDFN Halogen-Free
Parameter Test Conditions Units Min. Typ. Max. RFC to T X RFC to R X. P IN = +23 dbm, AC 80 MHz / 256 QAM
Features 2.11a,n,ac Applications.9 db T X Insertion Loss 19 db R X Isolation 12 db R X Gain 2.2 db Noise Figure 1 ma Current - db EVM @ 23 dbm Input (2.11ac MHz / 256 QAM) Lead Free 2 mm 12-lead STQFN
MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db
Features Integrated Directional Coupler Low Insertion Loss: 0.15 db @ 4 GHz Min. detectable power: -15 dbm @ 4 GHz Dynamic range: 45 db @ 4 GHz Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm
XP1080-QU-EV1. Power Amplifier GHz. Functional Schematic. Features. Description. Pin Configuration 1. Ordering Information. Rev.
2 3 4 5 6 7 8 16 15 14 13 12 11 10 Features Linear On-Chip Power Detector Output Power Adjust 25.0 db Small Signal Gain +27.0 dbm P1dB Compression Point +38.0 dbm OIP3 Lead-Free 7 mm 28-lead SMD Package
MADR V to 250V Driver for High Power PIN Diode Switches Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1
Features 20 V to 250 V Back Bias in Off State 200 ma Series Diode Bias Current at +25 C 50 ma Shunt Diode Bias Current at +25 C Propagation Delay less than 8 µs Low Quiescent Current Consumption 3 V or
MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3
Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package
30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC
AWB589 Data Sheet 3 ~ 12 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficiency over a wide
MADS T. Schottky Limiter DC - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2.
Features 3 Terminal LPF Broadband Shunt Structure Low Slope Resistance, 7 Ω +3 dbm Peak and CW Power Handling.6 db Shunt Insertion Loss +2 dbm Flat Leakage Power Lead-Free 1. x 1.2 mm 6-lead TDFN Package
MAAM Optical Node RF Amplifier MHz Rev. V3. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2
1 Features -8 dbm to +2 dbm Optical Input Range Low Equivalent Input Noise (EIN): 3.2 pa/rthz Single + V Bias 29 db Gain at MHz; 34 db Gain at 1000 MHz 27 db Gain Control Range +24 dbmv/ch Output at 0
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
AG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz + dbm PdB @ 9 MHz +6 dbm OIP @ 9 MHz Single Voltage Supply Internally matched to Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
Features
HMC37SC7E v1.1.3-3. GHz Typical Applications The HMC37SC7E is ideal for: Cellular/PCS/3G WCS, mmds & ism Fixed Wireless & WLAN Private Land Mobile Radio Functional Diagram Features Single Supply: Vdd =
MAPS Digital Phase Shifter 4-Bit, GHz. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information 1
MAPS-1146 4-Bit, 8. - 12. GHz Features 4 Bit 36 Coverage with LSB = 22.5 Integrated CMOS Driver Serial or Parallel Control Low DC Power Consumption Minimal Attenuation Variation over Phase Shift Range
XR1015-QH-EV1. Receiver GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2,3. Ordering Information 1
1 11 1 3 1 19 XR115-QH 1-1 GHz Rev. V1 Features Integrated LNA, Mixer and LO Buffer Amplifier.5 db Noise Figure 1. db Conversion Gain Lead-Free mm lead QFN Package 1% RF, DC and NF Testing RoHS* Compliant
MAAP STD Power Amplifier, 2 W GHz Rev. V2 Features Functional Schematic Description Pin Configuration2 Ordering Information1
Features 24 db Small Signal Gain 41 dbm Third Order Intercept Point (OIP3) >2 W Output P1dB 35 dbm Saturated Output Power Integrated Power Detector Bias 1330 ma @ 6 V Lead-Free 7 mm Cavity Package RoHS*
Features. Specifications
MGA-30489 0.25W Driver Amplifier Data Sheet Description Avago Technologies s MGA-30489 is a 0.25W highly dynamic range Driver Amplifier MMIC, housed in a SOT-89 standard plastic package. The device features
HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
MASW SPDT High Isolation Terminated Switch GHz Rev. V4. Features. Functional Block Diagram. Description. Pin Configuration 3
Features Positive Voltage Control High Isolation: 62 db @ 1 GHz 65 db @ 2 GHz Low Insertion Loss: 0.65 db @ 1 GHz 0.70 db @ 2 GHz 50 Ω Internal Terminations Fast Settling for Low Gate Lag requirements
TQP DC-6 GHz Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram
30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block
Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin connections and Package Marking
MGA-31816 0.1 W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA-31816 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features
DC-8.0 GHz InGaP HBT Packaged Matched Gain Block Amplifier
Features.5 Gain @ 6 GHz 2.5 Gain @ 850 MHz 36.0 m Output IP3 @ 850 MHz Noise Figure @ 850 MHz 20.3 m P1 @ 850 MHz Low Performance Variation Over Temperature SOT-89 Package 100% DC On-Wafer Testing ESD
Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
GND N/C GND RF IN N/C N/C N/C GND
MAAP-11246 Features High Gain: 23 db P1dB: dbm P SAT : 33 dbm IM3 Level: -22 dbc @ P OUT 27 dbm/tone Power Added Efficiency: 24% at P SAT Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant Description
MADR PIN Diode Driver for Series / Series High Power Switch Rev. 5. Pin Configuration. Features. Description
MADR-8888- Rev. Features High Drive Current Capability (± ) 7 Back Bias in Off State Switching Speed Approximately. Low Current Coumption Land Grid Array Package for SMT Applicatio Tape and Reel Packaging
TQP DC 6 GHz Gain Block
Product Description The is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 19 db gain, +31.7 dbm OIP3,
TQP3M9008 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 2.6 db gain, +36 dbm OIP3, and 1.3 db Noise
ECG055B-G InGaP HBT Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless Product Features SOT-89 Package Style Functional Block Diagram
Monolithic Amplifier LEE2-6+ Surface Mount. DC to 7 GHz. The Big Deal
Surface Mount Monolithic Amplifier 50Ω DC to 7 GHz The Big Deal Low Noise figure, 2.3 db at 2 GHz Low Current, 16 ma Broadband matched CASE STYLE: MC1630-1 Product Overview (RoHS compliant) is wideband
GHz Linear 4W Power Amplifier 6x6mm QFN
Features 16.5 Small Signal Gain 49 Third Order Intercept Point (OIP3) 4W Saturated RF Power Integrated Power Detector Package, RoHS Compliant 100% RF Testing General Description The X is a packaged linear
0.5-20GHz Driver. GaAs Monolithic Microwave IC
Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide
MAAL DIESMB. Low Noise Amplifier DC - 28 GHz. Features. Functional Schematic 1. Description. Pin Configuration 2. Ordering Information. Rev.
MAAL-11141-DIE Features Ultra Wideband Performance Noise Figure: 1.4 db @ 8 GHz High Gain: 17 db @ 8 GHz Output IP3: 28 dbm @ 8 GHz Bias Voltage: V DD = - V Bias Current: I DSQ = 6 - ma Ω Matched Input
Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin Connections and Package Marking
MGA-31716.1 W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA-31716 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features
TQP3M9008 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output
Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
![Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V](/thumbs/90/101370216.jpg "Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V")
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
DC-2.8 GHz InGaP HBT 0.5W Medium Power Amplifier
.W Medium Power Amplifier October 28 - Rev 6-Oct-8 CGB81-SC Features 18 m Linear Power @ 214 MHz 1. Gain @ 214 MHz 12 Gain @ 27 MHz 27 m P1 @ 214 MHz Low Performance Variation Over Temperature Low Cost:
Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
![Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]](/thumbs/88/115381636.jpg "Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]")
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
ECG002 InGaP HBT Gain Block
Product Features DC 6 GHz 20 db Gain @ 1 GHz +15.5 dbm P1dB @ 1 GHz +29 dbm OIP3 @ 1 GHz 3.8 db Noise Figure Internally matched to 50 Ω Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-86,
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V
v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.
Features 2 Watt Saturated Output Power Level Variable Drain Voltage (6-V) Operation x mm Lead PQFN Package RoHS Compliant Description The MAAP-67-PKG3 is a 3-stage 2 W power amplifier with on-chip bias
50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over
50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier
Features.5 Gain @ 6 GHz 2.5 Gain @ 850 MHz 36.0 m Output IP3 @ 850 MHz Noise Figure @ 850 MHz 20.3 m P1 @ 850 MHz Low Performance Variation Over Temperature Low Cost: Die Form or SOT-8 Package 100% DC
Features. Specifications
MGA-31289 0.25W High Gain Driver Amplifier 1500-3000 MHz Data Sheet Description Avago Technologies MGA-31289 is a 0.25W high gain driver amplifier MMIC with good gain flatness, housed in a standard SOT-89
SCG002 HIGH LINEARITY BROADBAND AMPLIFIER
SCG2 Features DC to 6 MHz 2 db Gain at 1 MHz 15 dbm Output P1dB at 1 MHz 29 dbm Output IP3 at 1 MHz 3.8 db Noise Figure at 2 MHz Applications Broadband Gain Blocks High Linearity Amplifiers Packages Available
GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm)
Output power (dbm) G Description GaAs Monolithic Microwave IC in SMD leadless package The is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a
TQP3M9028 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 14.7 db gain, + dbm OIP3, and 1.8 db Noise
30 MHz to 6 GHz RF/IF Gain Block ADL5611
Data Sheet FEATURES Fixed gain of 22.2 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 4. dbm at 9 MHz P1dB
Applications Ordering Information
Applications Repeaters Mobile Infrastructure Defense/Aerospace LTE / WCDMA / EDGE / CDMA General Purpose Wireless IF amplifier, RF driver amplifier Product Features 5-4 MHz Flat gain (14.7 ±.3 db) from.5
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC476SC7 / 476SC7E v4.814 Typical
Product Description VG111-F
Gain Ctrl Product Features 1.7 2.7 GHz bandwidth 26.6 db Attenuation Range +39.5 dbm Output IP3 +22 dbm P1dB Constant IP3 & P1dB over attenuation range Single voltage supply Pb-free 6mm 2-pin QFN package
Data Sheet. AMMP GHz High Gain Amplifier in SMT Package. Description. Features. Applications. Package Diagram. Functional Block Diagram
AMMP- GHz High Gain Amplifier in SMT Package Data Sheet Description The AMMP- MMIC is a GaAs wide-band amplifier in a surface mount package designed for medium output power and high gain over the - GHz
Features. = +25 C, Vdd = +5V, Idd = 400mA [1]
![Features. = +25 C, Vdd = +5V, Idd = 400mA [1]](/thumbs/78/77182342.jpg "Features. = +25 C, Vdd = +5V, Idd = 400mA [1]")
v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
MGA Current Adjustable Low Noise Amplifier
Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-68563 MGA-68563 Current Adjustable Low Noise Amplifier Description The MGA-68563 is an easy to use, economical GaAs MMIC amplifier
2-22GHz LNA with AGC. GaAs Monolithic Microwave IC
Linear gain, Return Losses (db) WWG A3667A A3688A UMS 67A 88A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates
TQP DC-6 GHz Gain Block
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE CATV Point to Point General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram DC-6000 MHz 15.4 db Gain @ 1.9 GHz 4 3.6
MA4P T. Quad PIN Diode π Attenuator MHz. M/A-COM Products Rev. V2. Features. Functional Schematic. Description.
1-4 MHz Features 4 PIN diodes in a SOT-2 Plastic Package Externally Selectable Bias and RF Matching Network 1 4, MHz Useable Frequency Band + 43 IP3 @ ( Ω) 1. db Loss @ ( Ω) 3 db Attenuation @ ( Ω) Lead-Free
HMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22
v.71 HMC59ST9 / 59ST9E Typical Applications The HMC59ST9 / HMC59ST9E is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications
30 MHz to 6 GHz RF/IF Gain Block ADL5610
Data Sheet FEATURES Fixed gain of 18.4 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 38.8 dbm at 9 MHz P1dB
HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description
v.112 HMC14LP3CE AMPLIFIER, 24-43. GHz Typical Applications This HMC14LP3BE is ideal for: Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems Functional
Features. = +25 C, Vdd 1, 2, 3 = +3V
v.11 HMC6LC AMPLIFIER, 6-2 GHz Typical Applications The HMC6LC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military
Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
Data Sheet. MGA Dual LNA for Balanced Application MHz. Features. Description. Typical Performances. Component Image.
MGA-16116 Dual LNA for Balanced Application 450 1450 MHz Data Sheet Description Avago Technologies MGA-16116 is an ultra low-noise high linearity amplifier pair with built-in active bias and shutdown features
TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information
Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz
5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC
AWB317 Data Sheet 5 ~ 12 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB317 a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range
MGA High Gain, High Linearity, Very Low Noise Amplifier. Features. Specifications. Applications. All other pins NC Not Connected
MGA- High Gain, High Linearity, Very Low Noise Amplifier Data Sheet Description Avago Technologies MGA- is a two stage, easy-touse GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise with good input
GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. Pout (dbm)
Pout (dbm) PAE at 1dB comp. ( %) YYWWG A3667A A3688A UMS YWWG A3667A A3688A UMS CHA6552-QJG Description GaAs Monolithic Microwave IC in SMD leadless package The CHA6552-QJG is a three stage monolithic
Data Sheet. MGA-635T6 GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function 3FYM. Description. Features.
MGA-T GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function Data Sheet Description Avago Technologies MGA-T is a LNA designed for GPS/ISM/Wimax applications in the (.9-.)GHz frequency
GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package
GaAs Monolithic Microwave IC in SMD leadless package Description The is a four stage monolithic GaAs high power amplifier producing 1 Watt output power. It is highly linear, with possible gain control
HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.
HMCST / STE Typical Applications v2.3 GaAs phemt MMIC LNA, Ohm - 1 MHz Features The HMCST(E) is ideal for: High P1 Output Power: +1 m VHF / UHF Antennas HDTV Receivers CMTS Equipment CATV, Cable Modem
Features. Specifications
MGA-31189 0.25W High Gain Driver Amplifier 50 2000 MHz Data Sheet Description Avago Technologies MGA-31189 is a 0.25W high gain with good gain flatness Driver Amplifier MMIC, housed in a standard SOT-89
HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz
v1.65 Typical Applications The HMC471MSG / HMC471MSGE is a dual RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
HMC478SC70 / 478SC70E v
HMC47SC7 / 47SC7E v2.14 Typical Applications The HMC47SC7(E) is an ideal for: Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
Preliminary Datasheet
Device Features This can be operated at Vd of 3.0V N.F = 0.78 db @ 1850MHz at Demo board 31.5 dbm Output IP3 at 0dBm/tone at 1850MHz 15.6 db Gain at 1850MHz 17.7 dbm P1dB at 1850 MHz Lead-free/Green/RoHS
50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
AWG115 Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG115, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a
Data Sheet. MGA Current-Adjustable, Low Noise Amplifier. Description. Features. Specifications at 500 MHz; 3V, 10 ma (Typ.
MGA-5 Current-Adjustable, Low Noise Amplifier Data Sheet Description Avago Technologies MGA-5 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent linearity and low noise figure for
GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
MMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,
v2.617 AMPLIFIER, - 12 GHz Typical Applications The is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated
Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
Data Sheet AMMC KHz 80 GHz TWA. Description. Features. Typical Performance (Vd=5V, Idsq=0.1A) Component Image.
AMMC-525 3KHz 8 GHz TWA Data Sheet Description The AMMC-525 MMIC is a 3KHz to 8GHz ultra broadband traveling wave amplifier. In this operational frequency band, AMMC-525 provides 8dB gain with better than
Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]
![Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]](/thumbs/94/119028866.jpg "Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]")
Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High
CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
Features. Specifications. Applications
MGA-3889 4MHz - 26MHz Flat Gain High Linearity Gain Block Data Sheet Description Avago Technologies MGA-3889 is a broadband, flat gain, high linearity gain block MMIC amplifier achieved through the use
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
High Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal High Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB5089Z a,b SOT-89
Features. Specifications. Note:
MGA-31589 0.5 W High Gain Driver Amplifier Data Sheet Description Avago Technologies MGA-31589 is a 0.5 W, high Gain, high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package.
Monolithic Amplifier PGA Flat Gain, High Dynamic Range to 1.5 GHz. The Big Deal
Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω 0.05 to 1.5 GHz The Big Deal High IP3 and IP2 Flat Gain / Excellent Return Loss Low Noise Figure SOT-89 PACKAGE Product Overview (RoHS compliant)
MGA Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package. Features. Applications. VBias
MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Avago Technologies MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier
WJA V Active-Bias InGaP HBT Gain Block
Applications IF Amplifier VHF/UHF Transmission Wireless Infrastructure CATV / SATV / MoCA General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram 50 Ohm Cascadable Gain Block