RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
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1 Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead PQFN Package 1% Matte Tin Plating over Copper Halogen-Free Green Mold Compound * and 26 C Reflow Compatible Block Diagram Description M/A-COM s RF power amplifier is a three stage GaAs MMIC which exhibits high gain and linearity performance in a lead-free 4 mm 16- lead PQFN surface mount plastic package. This product is designed for the 2.5 GHz IEEE / WiMax band. The also features an integrated power detector. The is fabricated using a high reliability GaAs HBT process to realize low current and high power functionality. The process features full passivation for increased performance and reliability. Ordering Information 1 Part Number TR-1 TR-3 SMB Package 1 piece reel 3 piece reel Sample Test Board (Includes 5 Samples) 1. Reference Application Note M513 for reel size Pin Configuration Pin No. Pin Name Description 1 V CS Bias Supply Voltage 2 N/C No Connect 3 RF IN RF Input 4 N/C No Connect 5 V EN1 Power Enable 6 V EN2 Power Enable 7 V EN3 Power Enable 8 DET OUT Detector Output 9 DET IN Detector Input 1 RF OUT /V CC3 RF Output, 3rd Stage Supply 11 RF OUT /V CC3 RF Output, 3rd Stage Supply 12 N/C No Connect 13 N/C No Connect 14 V CC2 2nd Stage Supply 15 N/C No Connect 16 V CC1 1st Stage Supply 17 Paddle 2 RF & DC Ground 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. 1 * Restrictions on Hazardous Substances, European Union Directive 22/95/EC.
2 Electrical Specifications: T A = +25 C, V CC = 5. V, Z = 5 Ω Parameter Test Conditions Units Min. Typ. Max. Gain 2.5 GHz db Gain Flatness GHz db ± 1 Input Return Loss GHz db 1 Output Return Loss GHz db 1 Output P1dB 2.5 GHz dbm 32 EVM GHz, P OUT = 26 dbm OFDM, QAM-64, 54 Mbps % 2.5 Enable Voltage V EN V 2.8 Device / Supply Voltage GHz V 5 Quiescent Current Operating Current 2.5 GHz, No RF 2.5 GHz, P OUT = 26 dbm ma ma PAE 2.5 GHz, P OUT = 26 dbm % 14 Detector Output Range 2.5 GHz, P OUT = dbm, OFDM V.5-2. Thermal 85 C package paddle temperature C/W Includes system EVM of.8%. Absolute Maximum Ratings 4,5 Parameter Input Power Operating Supply Voltage Operating Control Voltage Absolute Maximum + 5 dbm +6. Volts +3.6 Volts Operating Temperature to +85 C Channel Temperature +15 C Storage Temperature -4 C to +15 C 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. M/A-COM does not recommend sustained operation near these survivability limits. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 2
3 Application Schematic External Parts List Component Value Case Size Manufacturer C1, C5, C6, C1, C17 1 pf 42 Murata C2 1.8 pf 42 Murata C3, C8, C13, C14, C15.1 µf 42 Murata C4, C7, C9 8 pf 42 Murata C11 2 pf 42 Murata C pf 42 Murata C µf 126 Kemet L1 3.6 nh 42 Coilcraft L2 15 nh 42 Coilcraft R1,R2,R3 Ω R4 1 kω Sample Board 6 TL1 TL2, TL3 5.5 mm (L),.37 mm (W) 4 mm (L),.37 mm (W) TL4 1.7 mm (L),.37 mm (W) TL5.3 mm (L),.37 mm (W) RF IN RF OUT 6. PCB Material FR4-5 Ω Line =.37 mm (W) 3
4 Typical Performance Curves: over temp Gain 4 S Frequency (GHz) Frequency (GHz) S22 OIP Frequency (GHz) P1dB Output Power (dbm) Current ºC -4ºC +85ºC Output Power (dbm) Output Power (dbm)
5 Typical Performance EVM vs. Channel Power 8 V DET vs. Channel Power Over 2.5 GHz GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Current vs. Channel Power.7 Current vs. Channel Power Over 2.5 GHz GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz
6 Lead-Free 4 mm 16-Lead PQFN Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. 6
MACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3
Features Integrated Directional Coupler Low Insertion Loss:.5 db @ Min. detectable power: -15 dbm @ Dynamic range: 45 db @ Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm 6-Lead TDFN Halogen-Free
MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db
Features Integrated Directional Coupler Low Insertion Loss: 0.15 db @ 4 GHz Min. detectable power: -15 dbm @ 4 GHz Dynamic range: 45 db @ 4 GHz Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm
MAAM Optical Node RF Amplifier MHz Rev. V3. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2
1 Features -8 dbm to +2 dbm Optical Input Range Low Equivalent Input Noise (EIN): 3.2 pa/rthz Single + V Bias 29 db Gain at MHz; 34 db Gain at 1000 MHz 27 db Gain Control Range +24 dbmv/ch Output at 0
MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
RF OUT / N/C RF IN / V G
MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.
MADS T. Schottky Limiter DC - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2.
Features 3 Terminal LPF Broadband Shunt Structure Low Slope Resistance, 7 Ω +3 dbm Peak and CW Power Handling.6 db Shunt Insertion Loss +2 dbm Flat Leakage Power Lead-Free 1. x 1.2 mm 6-lead TDFN Package
Parameter Test Conditions Units Min. Typ. Max. RFC to T X RFC to R X. P IN = +23 dbm, AC 80 MHz / 256 QAM
Features 2.11a,n,ac Applications.9 db T X Insertion Loss 19 db R X Isolation 12 db R X Gain 2.2 db Noise Figure 1 ma Current - db EVM @ 23 dbm Input (2.11ac MHz / 256 QAM) Lead Free 2 mm 12-lead STQFN
MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3
Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package
MAPS Digital Phase Shifter 4-Bit, GHz. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information 1
MAPS-1146 4-Bit, 8. - 12. GHz Features 4 Bit 36 Coverage with LSB = 22.5 Integrated CMOS Driver Serial or Parallel Control Low DC Power Consumption Minimal Attenuation Variation over Phase Shift Range
MAAM Driver Amplifier GHz Rev. V3. Functional Schematic. Features. Description. Pin Configuration 3,4. Ordering Information 1,2
MAAM-11139 7. - 33. GHz Rev. V3 Features 3 Stage for 8/ GHz Bands 1 db Gain dbm Output Third Order Intercept (OIP3) dbm Output P1dB Variable Gain with Adjustable Bias Lead-Free mm Lead PQFN Package RoHS*
MASW SPDT High Isolation Terminated Switch GHz Rev. V4. Features. Functional Block Diagram. Description. Pin Configuration 3
Features Positive Voltage Control High Isolation: 62 db @ 1 GHz 65 db @ 2 GHz Low Insertion Loss: 0.65 db @ 1 GHz 0.70 db @ 2 GHz 50 Ω Internal Terminations Fast Settling for Low Gate Lag requirements
MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated
GND N/C GND RF IN N/C N/C N/C GND
MAAP-11246 Features High Gain: 23 db P1dB: dbm P SAT : 33 dbm IM3 Level: -22 dbc @ P OUT 27 dbm/tone Power Added Efficiency: 24% at P SAT Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant Description
MAAM Differential CATV Variable Gain Amplifier MHz Rev. V1. Functional Schematic. Features. Pin Configuration 3,4.
Features 36 db Gain 25 db Attenuation Range 2.5 db Noise Figure -62 dbc ACPR @ 67 dbmv Output -1 channel 256 QAM -60 dbc ACPR @ 59 dbmv/channel -4 channel 256 QAM 6 V, 930 ma Differential Input and Output
MA4P T. Quad PIN Diode π Attenuator MHz. M/A-COM Products Rev. V2. Features. Functional Schematic. Description.
1-4 MHz Features 4 PIN diodes in a SOT-2 Plastic Package Externally Selectable Bias and RF Matching Network 1 4, MHz Useable Frequency Band + 43 IP3 @ ( Ω) 1. db Loss @ ( Ω) 3 db Attenuation @ ( Ω) Lead-Free
MAAM CATV 75 Ω Push Pull Amplifier MHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration 3
Features 25 db Gain 12 Volts DC Bias Differential Inputs and Outputs Low Distortion Adjustable Bias Current and Gain Control Lead-Free 5 x 7 mm 40-Lead PQFN Package Halogen-Free Green Mold Compound RoHS*
MAAL Low Noise Amplifier GHz Rev. V2. Functional Block Diagram. Features. Description. Pin Configuration. Ordering Information 1,2
MAAL. - 1.6 GHz Rev. V2 Features Low Noise Figure Excellent Input Return Loss Single Voltage Bias 3 V Integrated Active Bias Circuit Current Adjustable 2-8 ma with an External Resistor High Linearity,
MADR V to 250V Driver for High Power PIN Diode Switches Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1
Features 20 V to 250 V Back Bias in Off State 200 ma Series Diode Bias Current at +25 C 50 ma Shunt Diode Bias Current at +25 C Propagation Delay less than 8 µs Low Quiescent Current Consumption 3 V or
MAOC Preliminary Information. Broadband Voltage Controlled Oscillator 6-12 GHz Preliminary - Rev. V3P. Features. Block Diagram.
Features Octave Tuning Bandwidth Phase Noise: -95 dbc/hz @ 100 khz V TUNE Range: 0-23 V Low Current Consumption: 58 ma Excellent Temperature Stability +5 V Bias Supply Lead-Free 4 mm 24-Lead Package RoHS*
XP1080-QU-EV1. Power Amplifier GHz. Functional Schematic. Features. Description. Pin Configuration 1. Ordering Information. Rev.
2 3 4 5 6 7 8 16 15 14 13 12 11 10 Features Linear On-Chip Power Detector Output Power Adjust 25.0 db Small Signal Gain +27.0 dbm P1dB Compression Point +38.0 dbm OIP3 Lead-Free 7 mm 28-lead SMD Package
XR1015-QH-EV1. Receiver GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2,3. Ordering Information 1
1 11 1 3 1 19 XR115-QH 1-1 GHz Rev. V1 Features Integrated LNA, Mixer and LO Buffer Amplifier.5 db Noise Figure 1. db Conversion Gain Lead-Free mm lead QFN Package 1% RF, DC and NF Testing RoHS* Compliant
TQP DC-6 GHz Gain Block
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Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
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MAGX PPR. Preliminary Information. 15 W GaN-Si Transistor in Surface Mount Plastic Package DC GHz. Preliminary - Rev. V2P.
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MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.
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Features 24 db Small Signal Gain 41 dbm Third Order Intercept Point (OIP3) >2 W Output P1dB 35 dbm Saturated Output Power Integrated Power Detector Bias 1330 ma @ 6 V Lead-Free 7 mm Cavity Package RoHS*
TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information
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![Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]](/thumbs/94/119028866.jpg "Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]")
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![Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V](/thumbs/90/101370216.jpg "Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V")
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![Features. = +25 C, Vdd = +5V, Idd = 400mA [1]](/thumbs/78/77182342.jpg "Features. = +25 C, Vdd = +5V, Idd = 400mA [1]")
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v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage
MADR TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. 4. Functional Schematic. Features.
Features High Voltage CMOS Technology Four Channel Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost Lead-Free SOIC-16 Plastic Package Halogen-Free Green Mold Compound
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Features Functional Block Diagram High output power On-chip detector All positive bias Pb-free RoHs compliant 4x4 QFN package Description The CMD170P4 is a GaAs MMIC driver amplifier housed in a leadless
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TQP3M9008 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 2.6 db gain, +36 dbm OIP3, and 1.3 db Noise
QPL9065SR. Ultra Low-Noise 2-Stage Bypass LNA. Product Description. Product Features. Applications. Functional Block Diagram. Ordering Information
QPL965 Product Description The QPL965 is a high-linearity, ultra-low noise 2-stage gain block amplifier module with a bypass mode functionality integrated to the second stage in the product. At 1.95 GHz,
TQP3M9008 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output
SZA-5044(Z) 4.9GHz to 5.9GHz 5V POWER AMPLIFIER. Features. Product Description. Applications. Package: QFN, 4mmx4mm
4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description RFMD s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier
400 MHz 4000 MHz Low Noise Amplifier ADL5521
FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 db at 900 MHz Including external input match Gain of 20.0 db at 900 MHz OIP3 of 37.7 dbm at 900 MHz P1dB of 22.0 dbm at 900 MHz Integrated
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Surface Mount Monolithic Amplifier 50Ω DC to 7 GHz The Big Deal Low Noise figure, 2.3 db at 2 GHz Low Current, 16 ma Broadband matched CASE STYLE: MC1630-1 Product Overview (RoHS compliant) is wideband
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Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
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Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
SE2622L: 2.4 GHz, 256 QAM Power Amplifier
DATA SHEET SE2622L: 2.4 GHz, 256 QAM Power Amplifier Applications DSSS 2.4 GHz WLAN (IEEE 802.11b) OFDM 2.4 GHz WLAN (IEEE 802.11g) OFDM 2.4 GHz WLAN (IEEE 802.11n) OFDM 2.4 GHz WLAN (256 QAM) Access points,
RF5623 SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 3.3 to 3.8 GHz Linear Power Amplifier SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features High Gain; 32dB 2.5% EVM (RMS) at 26dBm, 5.0V Integrated
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Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 4x4 QFN package Description The CMD158C4 is
Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT
v1. Typical Applications The HMC689LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +32 dbm Low Conversion Loss:
RF V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER
3.0V to 5.0V, 3.3GHz to 3.8GHz Linear Power Amplifier RF5603 3.0V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features High Gain; 32dB 2.5% EVM (RMS) at
HMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features