INNOTION YP GHz-2.7GHz High Linearity Power Amplifier

Transcription

1 Features 3dB Gain(Typ) 33dBm P VCC=V NC VCC1 VCC2 NC RoHS & Pb-Free Product 2.% EVM VCC=V 3mA Quiescent Current@ VCC=V.V DC Operation Integrated Output Power Detector NC RF IN NC st Stage 2nd Stage Active Bias 3rd Stage RFOUT &VCC3 RFOUT &VCC3 RFOUT &VCC3 ESD protection all ports above V HBM, VREF1 4 9 RFOUT &VCC3 forward and reverse voltage Applications VCTR VREF2 VCCB PDET IEEE 82.11b/g/n WLAN Functional Block Diagram WiBro 2.3 GHz to 2.4GHz Applications WiMAX 2. GHz to 2.7GHz Applications Product Description The YP is a three-stage, high-linearity, high-gain power amplifier. The device is manufactured on an advanced InGaP/GaAs HBT process. This amplifier provides a typical gain of 3dB and P1dB power of 33dBm, typical bias condition is V at 3mA. The input are internally matched to Ω and require a minimum of external matching components to cover the entire 2.3GHz to 2.7GHz. The YP is assembled in a 16-Pin, 4 4mm 2, QFN package. It is internally integrated with ESD protection circuitry on all ports. Pin Description Pin No. Symbol Description 1, 3, 13, 16 NC No connection or connect to ground 2 RF IN RF input 4, 6 VREF1/VREF2 Bias current control voltage VCTR Power on/off control voltage 7 VCCB Supply voltage for bias circuit 8 PDET Output power detector 9,, 11, 12 RFOUT&VCC3 RF output and Stage3 supply voltage 14, 1 VCC2/VCC1 Stage 2/Stage 1 supply voltage For sales, technical support, please contact or sales@innotion.com.cn Page 1 of

2 Absolute Maximum Ratings Parameter Rating Unit Input RF Power with Ω Output Load + dbm Supply Voltage -. to +8. V Bias Voltage -. to +2.9 V DC Supply Current(no RF) 6 ma Operating Ambient Temperature - to +8 C Storage Temperature - to +1 C Caution! ESD Sensitive Device. ESD Rating: Class1C Value: Passes V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C1 MSL Rating: Level 3 at +26 C convection reflow Standard: JEDEC Standard J-STD- Electrical Characteristics Parameter WLAN IEEE82.11g Specification Min. Typ. Max. Unit Frequency Range GHz Conditions VCC=VCCB=.V, ICC=3mA, Temp=+2 C, 2.4~2. GHz P -1dB 33 dbm VCC=.V@2.442GHz EVM@ Pout=27dBm 2. % VCC=.V@2.442GHz, 82.11g, 4Mbps, 64QAM Current@ Pout=27dBm 6 ma VCC=.V@2.442GHz, 82.11g, 4Mbps, 64QAM Small Signal Gain 34 db VCC=.V@2.442GHz Power Supply Operating Voltage. V Quiescent Current (no RF) 3 ma VCC=VCCB=.V,Vref=2.83V Reference Current (Total) 3 ma VCC=VCCB=.V,Vref=2.83V WLAN IEEE82.11g VCC=VCCB=.V, ICC=2mA, Temp=+2 C, 2.4~2. GHz Frequency Range GHz P -1dB 33 dbm VCC=.V@2.442GHz EVM@ Pout=27dBm 3. % VCC=.V@2.442GHz, 82.11g, 4Mbps, 64QAM Current@ Pout=27dBm ma VCC=.V@2.442GHz, 82.11g, 4Mbps, 64QAM Small Signal Gain 3 db VCC=.V@2.442GHz Power Supply Operating Voltage. V Quiescent Current (no RF) 2 ma VCC=VCCB=.V,Vref=2.66V Reference Current (Total) 2 ma VCC=VCCB=.V,Vref=2.66V For sales, technical support, please contact or sales@innotion.com.cn Page 2 of

3 WLAN 82.11g Performance Plots VCC=VCCB=V, ICCQ=3mA(no RF), T=2 C Gain & Return Loss Gain & Return Loss S21, S11(dB) S11 S21 S-Parameter(dB) S11 S Power Gain vs. Input Power P1dB vs. Frequency 6 2.4GHz 2.4GHz 2.GHz P1dB 4 38 Gain(dB) 3 P1dB(dBm) Pin(dBm) EVM vs. Output Power ICC vs. Output Power IEEE 82.11g 4Mbps OFDM 64QAM BW MHz 2.412GHz 2.442GHz 2.472GHz GHz 2.442GHz 2.472GHz EVM(%) Pout(dBm) ICC(mA) Pout(dBm) For sales, technical support, please contact or sales@innotion.com.cn Page 3 of

4 Evaluation Board Schematic for WLAN Application ICCQ=mA (no RF) Notes: 1. Pin is power down pin. Apply >1. V DC to power off the PA. Apply V DC to power on. If the function is not desired, this pin may be connected to GND. 2. Pin8 is active power detection port, if the function is not desired, this pin need to left unterminated (open). For sales, technical support, please contact or sales@innotion.com.cn Page 4 of

5 WLAN 82.11g Performance Plots VCC=VCCB=V, ICCQ=2mA(no RF), T=2 C Gain & Return Loss Gain & Return Loss S21, S11(dB) S11 S21 S-Parameter(dB) S11 S Gain(dB) Power Gain vs. Input Power 2.4GHz 2.4GHz 2.GHz Pin(dBm) P1dB(dBm) P1dB vs. Frequency P1dB EVM vs. Output Power ICC vs. Output Power IEEE 82.11g 4Mbps OFDM 64QAM BW MHz 2.412GHz 2.442GHz 2.472GHz GHz 2.442GHz 2.472GHz EVM(%) ICC(mA) Pout(dBm) Pout(dBm) For sales, technical support, please contact or sales@innotion.com.cn Page of

6 Evaluation Board Schematic for WLAN Application ICCQ=2mA (no RF) Notes: 3. Pin is power down pin. Apply >1. V DC to power off the PA. Apply V DC to power on. If the function is not desired, this pin may be connected to GND. 4. Pin8 is active power detection port, if the function is not desired, this pin need to left unterminated (open). For sales, technical support, please contact or sales@innotion.com.cn Page 6 of

7 Evaluation Board Layout Board Size mm mm Board Thickness.8mm, Board Material FR4, Multi-Layer Top-Layer Middle-Layer1 For sales, technical support, please contact or Page 7 of

8 Middle-Layer2 Bottom-Layer Layer Details of DEMO Board For sales, technical support, please contact or Page 8 of

9 Packaging Diagram Recommended Solder Temperature Recommended Temperature Sn9.Ag4.Cu. For sales, technical support, please contact or Page 9 of

10 Tape dimensions and Orientation Reel dimensions and Orientation For sales, technical support, please contact or Page of