ECG002 InGaP HBT Gain Block
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- Francis Fleming
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1 Product Features DC 6 GHz 20 db 1 GHz dbm 1 GHz +29 dbm 1 GHz 3.8 db Noise Figure Internally matched to 50 Ω Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-86, SOT-363, & SOT-89 package Applications Mobile Infrastructure CATV / FTTX WLAN / ISM RFID WiMAX / WiBro Product Description The ECG002 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG002 typically provides 20 db of gain, +29 dbm Output IP3, and dbm P1dB. The ECG002 consists of a Darlington-pair amplifier using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in low-cost, surface-mountable plastic lead-free/green/rohs-compliant SOT-363, SOT-86 and SOT-89 packages. All devices are 100% RF and DC tested. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG002 will work for other various applications within the DC to 6 GHz frequency range such as CATV and mobile wireless. Functional Diagram RF IN RF OUT ECG002B-G 4 RF In RF Out ECG002C-G RF IN 3 4 ECG002F-G RF OUT Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz DC 6000 Test Frequency MHz 1000 Gain db 20 Output P1dB dbm Output IP3 (2) dbm +29 Test Frequency MHz 2000 Gain db Large-signal Gain (3) db Output P1dB dbm Output IP3 (2) dbm +29 Noise Figure db 3.8 Device Voltage V Device Current ma Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +5 V, Rbias = 24 Ω, 50 Ω System. 2. 3OIP measured with two tones at an output power of +2 dbm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Large-signal gain is tested with an input power level of -3 dbm. Absolute Maximum Rating Parameter Device Current RF Input Power (continuous) Thermal Resistance - ECG002B-G Thermal Resistance - ECG002C-G Thermal Resistance - ECG002F-G Junction Temperature Rating 150 ma +12 dbm 131 C/W 233 C/W 233 C/W +160 C Thermal Resistance is for 10 6 hours MTTF Operation of this device above any of these parameters may cause permanent damage. Typical Performance (1) Parameter Units Typical Frequency MHz S21 db S11 db S22 db Output P1dB dbm Output IP3 dbm Noise Figure db Not Recommended for New Designs Recommended Replacement Part: TQP for ECG002B-G AG403-86G for ECG002C-G TQP for ECG002F-G Ordering Information Part No. ECG002B-G ECG002C-G ECG002F-G Description (lead-free/green/rohs-compliant SOT-89 package) (lead-free/green/rohs-compliant SOT-86 package) (lead-free/green/rohs-compliant SOT-363 package) Standard T/R size = 1000 pieces on a 7 reel for ECG002B-G. Standard T/R size = 1000 pieces on a 7 reel for ECG002C-G. Standard T/R size = 3000 pieces on a 7 reel for ECG002F-G. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 1 of 7 May 2012
2 Typical Device RF Performance Supply Bias = +5 V, R bias = 24 Ω, I cc = 45 ma Frequency MHz S21 db S11 db S22 db Output P1dB dbm Output IP3 dbm Noise Figure db Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24 Ω, Icc = 45 ma typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of -1 dbm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. 22 Gain vs. Frequency 0 S11, S22 vs. Frequency 120 Vde vs. Icc Gain (db) C -40C +85C S11, S22 (db) S11 S Frequency (GHz) Icc (ma) C Vde (V) 32 OIP3 vs. Frequency 4.5 Noise Figure vs. Frequency 20 P1dB vs. Frequency OIP3 (dbm) C -40C +85C NF (db) P1dB (dbm) C -40C +85C TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 2 of 7 May 2012
3 Recommended Application Circuit Vcc Icc = 45 ma ECG002C-PCB R4 Bias Resistor C4 Bypass Capacitor C µf RF IN C1 Blocking Capacitor ECG002 L1 RF Choke C2 Blocking Capacitor RF OUT ECG002B-PCB ECG002F-PCB Recommended Component Values Reference Designator L1 820 nh 220 nh 68 nh 27 nh 22 nh 18 nh 15 nh C1, C2, C4.018 µf 1000 pf 100 pf 68 pf 68 pf 56 pf 39 pf 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. Value / Type Size L1 39 nh wirewound inductor 0603 C1, C2 56 pf chip capacitor 0603 C µf chip capacitor 0603 C4 Do Not Place R4 24Ω 1% tolerance 0805 Recommended Bias Resistor Values Supply Voltage R1 value Size 5 V 24.4 ohms V 46.7 ohms V 91 ohms V 113 ohms V 136 ohms V 180 ohms 2010 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 3 of 7 May 2012
4 ECG002B-G Mechanical Information This package is lead-free/green/rohs-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. E002G XXXX-X Outline Drawing Product Marking The component will be marked with an E002G designator with an alphanumeric lot code on the top surface of the package. MSL / ESD Rating Land Pattern ESD Rating: Class 1A Value: Passes between 250 and 500V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.35mm (#80 /.0135 ) diameter drill and have a final plated thru diameter of.25 mm (.010 ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 4 of 7 May 2012
5 ECG002C-G Mechanical Information This package is lead-free/green/rohs-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with a twodigit numeric lot code (shown as XX ) followed with a K designator on the top surface of the package. MSL / ESD Rating ESD Rating: Class 1A Value: Passes between 250 and 500V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Land Pattern Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.35mm (#80 /.0135 ) diameter drill and have a final plated thru diameter of.25 mm (.010 ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 5 of 7 May 2012
6 ECG002F-G Mechanical Information This package is lead-free/green/rohs-compliant. The plating material on the leads is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with a twodigit numeric lot code (shown as XX ) followed with a 5 designator on the top surface of the package. XX5 MSL / ESD Rating ESD Rating: Class 1A Value: Passes between 250 and 500V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Land Pattern Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.35mm (#80 /.0135 ) diameter drill and have a final plated thru diameter of.25 mm (.010 ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 6 of 7 May 2012
7 Typical Device S-Parameters ECG002B-G S-Parameters (V device = +3.9 V, I CC = 45 ma, T = 25 C, calibrated to device leads) Freq (MHz) S11 (db) S11 (ang) S21 (db) S21 (ang) S12 (db) S12 (ang) S22 (db) S22 (ang) Typical Device S-Parameters ECG002C-G S-Parameters (V device = +3.9 V, I CC = 45 ma, T = 25 C, calibrated to device leads) Freq (MHz) S11 (db) S11 (ang) S21 (db) S21 (ang) S12 (db) S12 (ang) S22 (db) S22 (ang) Typical Device S-Parameters ECG002F-G S-Parameters (V device = +3.9 V, I CC = 45 ma, T = 25 C, calibrated to device leads) Freq (MHz) S11 (db) S11 (ang) S21 (db) S21 (ang) S12 (db) S12 (ang) S22 (db) S22 (ang) Device S-parameters are available for download from the website at: TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page 7 of 7 May 2012
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Features.5 Gain @ 6 GHz 2.5 Gain @ 850 MHz 36.0 m Output IP3 @ 850 MHz Noise Figure @ 850 MHz 20.3 m P1 @ 850 MHz Low Performance Variation Over Temperature SOT-89 Package 100% DC On-Wafer Testing ESD
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HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
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Medium Power, High Linearity Amplifier The Communications Edge Product Features - MHz Bandwidth +45 dbm Output IP3 13 db Gain +27 dbm P1dB MTBF > 7 Hours Internally Matched Multiple Bias Voltages (+7.
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General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
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Product Overview The is a high linearity driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies
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More informationTypical Performance 1. 2 OIP3 _ measured with two tones at an output of 11 dbm per tone separated by 1 MHz. Absolute Maximum Ratings
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