30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC
|
|
- Jeffery Anthony
- 5 years ago
- Views:
Transcription
1 AWB589 Data Sheet 3 ~ 12 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficiency over a wide range of frequency from 3 MHz to 12 MHz, being suitable for use in both receiver and transmitter of telecommunication system up to 1.2 GHz. It has an active bias network for stable current over temperature and process variation. The amplifier is available in an SOT89 package and passes through the stringent DC, RF, and reliability tests. 1.2 Features 2. db gain at 5 MHz Application circuit 27. dbm P1dB at 5 MHz 42. dbm OIP3 at 5 MHz Gain flatness =.6 db at 47 ~ 86 MHz Vdevice C3 5 input & output matching MTTF > 1 Years Single supply: +5 V, +8 V RF IN C1 AWB589 L1 C2 RF OUT 1.3 Applications Wide-band amplifier at 3 ~ 12 MHz IF amplifier 1.4 Package Profile & RoHS Compliance SOT89, 4.5x4. mm 2, surface mount RoHS-compliant 1/25 ASB Inc. sales@asb.co.kr April 217
2 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +5, +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current ma Device Voltage V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 2.2 Product Specification Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Min Typ Max Unit Frequency 5 MHz Gain 19.5 db S11-2. db S22-2. db Noise Figure 3. db OIP3 42. dbm P1dB 27. dbm Current 17 ma Device Voltage +8. V 2.3 Pin Configuration Pin Description Simplified Outline 1 RF_IN 2 Ground 3 RF_OUT & Bias 2/25 ASB Inc. sales@asb.co.kr April 217
3 2.4 Absolute Maximum Ratings Parameters Operation Case Temperature Storage Temperature Device Voltage Operation Junction Temperature Input RF Power (At 3 MHz, CW, 5 matched)* Max. Ratings -4 to 85 C -4 to 15 C +1 V +16 C +21 dbm The operation of this device in excess of any of these limits may cause permanent damage. * Refer to the max. input RF power data at The max. input RF power, in principle, depends upon application frequency, matching circuit, and device voltage. 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 43 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 75 V MM Class A Voltage Level: 1 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 26 C reflow (Intentionally Blanked) 3/25 ASB Inc. sales@asb.co.kr April 217
4 3. Application: 3 ~ 512 MHz (Vdevice = +8 V) 3.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 47 nh 126 RF choke inductor Murata 4/25 ASB Inc. sales@asb.co.kr April 217
5 3.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 3.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S11 K S21 S12 S Stability Factor, K Frequency (MHz) 5/25 ASB Inc. sales@asb.co.kr April 217
6 4. Application: 3 ~ 512 MHz (Vdevice = +8 V, Additional Matching) 4.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN L3 C1 L2 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L RF choke inductor Murata L2 5.6 nh 63 Matching inductor Murata L3 68 nh 63 Matching inductor Samsung 6/25 ASB Inc. sales@asb.co.kr April 217
7 4.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 4.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S11 K S21 S12 S Stability Factor, K Frequency (MHz) 7/25 ASB Inc. sales@asb.co.kr April 217
8 4.4 Plots of Performances with Temperature 23 Frequency = 25 MHz 22 Gain (db) Temperature ( C) 2 19 Current (ma) Temperature ( C) 8/25 ASB Inc. sales@asb.co.kr April 217
9 5 Frequency = 25 MHz 4 NF (db) Temperature ( C) Frequency = 25 MHz P1dB (dbm) Temperature ( C) Frequency = 25 MHz OIP3 (dbm) Temperature ( C) 9/25 ASB Inc. sales@asb.co.kr April 217
10 5. Application: 3 ~ 512 MHz (Vdevice = +5 V) 5.1 Application Circuit & Evaluation Board Vdevice = + 5V C3 R1 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 47 nh 126 RF choke inductor Murata R1 5.6 k 63 Bias resistor Samsung 1/25 ASB Inc. sales@asb.co.kr April 217
11 5.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +5. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 5.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S12 S11 K S21 S Stability Factor, K Frequency (MHz) 11/25 ASB Inc. sales@asb.co.kr April 217
12 6. Application: 3 ~ 512 MHz (Vdevice = +5 V, Additional Matching) 6.1 Application Circuit & Evaluation Board Vdevice = +5 V C3 R1 L1 RF IN L3 C1 L2 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L RF choke inductor Murata L2 5.6 nh 63 Matching inductor Murata L3 68 nh 63 Matching inductor Samsung R1 5.6 k 63 Bias resistor Samsung 12/25 ASB Inc. sales@asb.co.kr April 217
13 6.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +5. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 6.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S12 S22 K S11 S Stability Factor, K Frequency (MHz) 13/25 ASB Inc. sales@asb.co.kr April 217
14 7. Application: 47 ~ 86 MHz 7.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 12 nh 63 RF choke inductor Samsung 14/25 ASB Inc. sales@asb.co.kr April 217
15 7.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 7.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S12 S11 S21 K S Stability Factor, K Frequency (MHz) 15/25 ASB Inc. sales@asb.co.kr April 217
16 8. Application: 47 ~ 86 MHz (Additional Matching) 8.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 L2 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 12 nh 63 RF choke inductor Samsung L2 4.7 nh 63 Matching inductor Murata 16/25 ASB Inc. sales@asb.co.kr April 217
17 8.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 8.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) K S22 S21 S12 S Stability Factor, K Frequency (MHz) 17/25 ASB Inc. sales@asb.co.kr April 217
18 9. Application: 1 MHz (IF) 9.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 47 nh 126 RF choke inductor Murata 18/25 ASB Inc. sales@asb.co.kr April 217
19 9.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency 1 MHz Gain 2. db S11-16 db S22-2 db Noise Figure 3. db Output IP3 1) 43. dbm Output P1dB 27. dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 9.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S22 S11 S12 S21 K Stability Factor, K Frequency (MHz) 19/25 ASB Inc. sales@asb.co.kr April 217
20 1. Application: 12 MHz 1.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 15 nh 63 RF choke inductor Murata 2/25 ASB Inc. sales@asb.co.kr April 217
21 1.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency 12 MHz Gain 18.5 db S db S db Noise Figure 3. db Output IP3 1) 4. dbm Output P1dB 26.5 dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 1.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S12 S21 S11 S22 K Stability Factor, K Frequency (MHz) 21/25 ASB Inc. sales@asb.co.kr April 217
22 11. Application: Supply Voltage = +5, +6, +7 V 11.1 Application Circuit & Evaluation Board Vdevice C3 Rbias L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 12 nh 63 RF choke inductor Murata R1 Rbias 63 Bias resistor Samsung 22/25 ASB Inc. sales@asb.co.kr April 217
23 11.2 Rbias vs Current Supply Voltage(V) Rbais(k ) Current(mA) 5 Not used Not used Not used Performance Table Supply voltage = +5, +6, +7 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current ma Device Voltage V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 23/25 ASB Inc. sales@asb.co.kr April 217
24 12. Package Outline (SOT89, 4.5x4.x1.5 mm) Part No. AWB589 Pxxxx Lot No. Symbols Dimensions (In mm) MIN NOM MAX A L b b C D D E E e H S e Surface Mount Recommendation (In mm) NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 24/25 ASB Inc. sales@asb.co.kr April 217
25 14. Recommended Soldering Reflow Profile 26 C 2~4 sec 2 C Ramp-up (3 C/sec) Ramp-down (6 C/sec) 15 C 6~18 sec (End of Datasheet) Copyright ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 25/25 ASB Inc. sales@asb.co.kr April 217
50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over
More information50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
AWG115 Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG115, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a
More information5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC
AWB317 Data Sheet 5 ~ 12 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB317 a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range
More information50 ~ 1200 MHz Gain Adjustable Trans-impedance Amplifier MMIC
ASA6B Data Sheet 5 ~ MHz Gain Adjustable Trans-impedance Amplifier MMIC. Product Overview. General Description ASA6B, a trans-impedance amplifier (TIA) with voltage controlled attenuator, has a high linearity
More informationPW118 InGaP HBT IF Amplifier
PW8 Features Applications Functional Diagram - MHz 9 db Gain at 7MHz +.8 dbm PdB + dbm Output IP Single Voltage Supply Lead-free / Green / RoHS- compliant SOT-89 Package Description IF Amplifier VHF/UHF
More informationMAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated
More informationSBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block
Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
More informationRF OUT / N/C RF IN / V G
MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.
More informationAG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz + dbm PdB @ 9 MHz +6 dbm OIP @ 9 MHz Single Voltage Supply Internally matched to Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
More informationAG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Data Sheet FEATURES Fixed gain of 22.2 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 4. dbm at 9 MHz P1dB
More informationECG002 InGaP HBT Gain Block
Product Features DC 6 GHz 20 db Gain @ 1 GHz +15.5 dbm P1dB @ 1 GHz +29 dbm OIP3 @ 1 GHz 3.8 db Noise Figure Internally matched to 50 Ω Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-86,
More informationMonolithic Amplifier LEE2-6+ Surface Mount. DC to 7 GHz. The Big Deal
Surface Mount Monolithic Amplifier 50Ω DC to 7 GHz The Big Deal Low Noise figure, 2.3 db at 2 GHz Low Current, 16 ma Broadband matched CASE STYLE: MC1630-1 Product Overview (RoHS compliant) is wideband
More informationECG055B-G InGaP HBT Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless Product Features SOT-89 Package Style Functional Block Diagram
More information30 MHz to 6 GHz RF/IF Gain Block ADL5610
Data Sheet FEATURES Fixed gain of 18.4 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 38.8 dbm at 9 MHz P1dB
More informationMAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
More information50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
More informationFeatures. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
More information30 MHz to 6 GHz RF/IF Gain Block ADL5544
Data Sheet FEATURES Fixed gain of 17.4 db Broadband operation from 3 MHz to 6 GHz Input/output internally matched to Ω Integrated bias control circuit OIP3 of 34.9 dbm at 9 MHz P1dB of 17.6 dbm at 9 MHz
More informationProduct Description VG111-F
Gain Ctrl Product Features 1.7 2.7 GHz bandwidth 26.6 db Attenuation Range +39.5 dbm Output IP3 +22 dbm P1dB Constant IP3 & P1dB over attenuation range Single voltage supply Pb-free 6mm 2-pin QFN package
More informationRoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
More informationTQP3M9008 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output
More informationFeatures. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 43.0 dbm @ 900 MHz Gain = 20.0 db @ 900 MHz Output P1 db = 24.5 dbm @ 900 MHz 50 Ω Cascadable Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BT09AG is a
More informationTAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block
More informationFeatures OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
More informationHMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
More information20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
More informationMonolithic Amplifier MNA-6W+ High Directivity. 0.5 to 5.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 5.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
More information20 MHz to 6 GHz RF/IF Gain Block ADL5542
FEATURES Fixed gain of db Operation up to 6 GHz Input/output internally matched to Ω Integrated bias control circuit Output IP3 46 dbm at MHz 4 dbm at 9 MHz Output 1 db compression:.6 db at 9 MHz Noise
More informationMonolithic Amplifier MNA-2A+ High Directivity. 0.5 to 2.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 2.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
More informationMonolithic Amplifier PGA Flat Gain, High Dynamic Range to 1.5 GHz. The Big Deal
Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω 0.05 to 1.5 GHz The Big Deal High IP3 and IP2 Flat Gain / Excellent Return Loss Low Noise Figure SOT-89 PACKAGE Product Overview (RoHS compliant)
More informationDC to 1000 MHz IF Gain Block ADL5530
Data Sheet FEATURES Fixed gain of 16. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power supply 3 V or
More information400 MHz 4000 MHz Low Noise Amplifier ADL5521
FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 db at 900 MHz Including external input match Gain of 20.0 db at 900 MHz OIP3 of 37.7 dbm at 900 MHz P1dB of 22.0 dbm at 900 MHz Integrated
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC476SC7 / 476SC7E v4.814 Typical
More informationSCG002 HIGH LINEARITY BROADBAND AMPLIFIER
SCG2 Features DC to 6 MHz 2 db Gain at 1 MHz 15 dbm Output P1dB at 1 MHz 29 dbm Output IP3 at 1 MHz 3.8 db Noise Figure at 2 MHz Applications Broadband Gain Blocks High Linearity Amplifiers Packages Available
More informationTQP DC 6 GHz Gain Block
Product Description The is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 19 db gain, +31.7 dbm OIP3,
More informationFeatures. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
More informationCGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E
Dual CATV 5MHz to 1MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-1Z is a high performance GaAs HBT MMIC amplifier.
More informationFeatures. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
More informationMMA GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vds=5V Psat: 19.5 dbm @ Gain: 14 db Vdd =3 to 6 V Ids = 13 ma Input and Output Fully Matched to 5 Ω Applications: Communication systems Microwave instrumentations
More informationApplications Ordering Information
Applications Repeaters Mobile Infrastructure Defense/Aerospace LTE / WCDMA / EDGE / CDMA General Purpose Wireless IF amplifier, RF driver amplifier Product Features 5-4 MHz Flat gain (14.7 ±.3 db) from.5
More informationQPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information
General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 41.0 dbm @ 1900 MHz Gain = 15.5 db @ 1900 MHz Output P1 db = 25.5 dbm @ 1900 MHz 50 Ω Cascadable Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BT09VG is
More informationTQP3M9008 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 2.6 db gain, +36 dbm OIP3, and 1.3 db Noise
More informationTQP DC-6 GHz Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram
More informationBroadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX in a single amplifier.
Flat Gain, Ultra-Wideband Monolithic Amplifier 50Ω 0.01 to 12 GHz The Big Deal Ultra broadband performance Excellent Gain Flatness through 8 GHz Broadband without external matching components CASE STYLE:
More informationMonolithic Amplifier MNA-5A+ High Directivity. 0.5 to 2.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 2.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
More information20 MHz to 500 MHz IF Gain Block ADL5531
Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:
More informationTypical Performance 1. IS-95C ACPR dbm WCDMA ACLR dbm
Device Features OIP3 = 45.0 dbm @ 1900 MHz Gain = 15.0 db @ 1900 MHz Output P1 db = 27.5 dbm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package
More informationGaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
More informationDual Matched MMIC Amplifier
Surface Mount Dual Matched MMIC Amplifier 50Ω DC to 5.2 GHz The Big Deal Gain, 14.1 db typ. at 2 GHz Dual matched amplifier for push-pull & balanced amplifiers High dynamic range CASE STYLE: JV2579 Product
More informationTGA2602-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
More informationTQP3M9028 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 14.7 db gain, + dbm OIP3, and 1.8 db Noise
More informationFeatures. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1
AVT-53663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-53663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
More informationData Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin connections and Package Marking
MGA-31816 0.1 W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA-31816 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features
More informationGain Control Range db
v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
More informationBroadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
High Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal High Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB5089Z a,b SOT-89
More informationWJA V Active-Bias InGaP HBT Gain Block
Applications IF Amplifier VHF/UHF Transmission Wireless Infrastructure CATV / SATV / MoCA General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram 50 Ohm Cascadable Gain Block
More informationFeatures. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
More informationHMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram
v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single
More informationTQP3M9018 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 6 Pin x mm QFN Package Product Features Functional Block Diagram -4 MHz.5 db Gain at 9 MHz. db Noise Figure
More informationHMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22
v.71 HMC59ST9 / 59ST9E Typical Applications The HMC59ST9 / HMC59ST9E is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications
More informationData Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin Connections and Package Marking
MGA-31716.1 W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA-31716 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features
More informationLOW NOISE AMPLIFIER GaAs MMIC. -4.0dBm
LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG7HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP operated by single low positive
More informationTGA2601-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.414 Typical Applications The HMC5846LS6
More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features NF = 0.95 db @ 900MHz at RF connectors of Demo board Gain = 20.5 db @ 900 MHz OIP3 = 30.0 dbm @ 1900MHz Output P1 db = 17.5 dbm @ 900MHz 5V/27mA, MTTF > 100 Years, MSL 1, Class 0 Lead-free/RoHS-compliant
More information400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324
Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.
More informationAH1. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (4) Absolute Maximum Rating
Product Features 25 4 MHz +41 dbm OIP3 3 db Noise Figure.5 db Gain +22 dbm P1dB Lead-free/Green/RoHS-compliant SOT-8 Package Single +5 V Supply MTTF > 1 years Applications Mobile Infrastructure CATV /
More informationBroadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
Ultra Linear Low Noise Monolithic Amplifier 50Ω 0.05 to 4 GHz The Big Deal Ultra High IP3 Broadband High Dynamic Range May be used as a replacement for RFMD SPF-5189Z a,b SOT-89 PACKAGE Product Overview
More informationASB ALE2045T2 Internally Matched LNA Module Datasheet
ASB ALE2045T2 Datasheet http://www.manuallib.com/asb/ale2045t2-internally-matched-lna-module-datasheet.html The plerow ACL-series is the compactly designed surface-mount module for the use of the LNA with
More informationFeatures. Specifications
MGA-30489 0.25W Driver Amplifier Data Sheet Description Avago Technologies s MGA-30489 is a 0.25W highly dynamic range Driver Amplifier MMIC, housed in a SOT-89 standard plastic package. The device features
More informationMonolithic Amplifier TSY-13LNB+ Wideband. 50Ω 0.03 to 1 GHz. The Big Deal
Wideband Monolithic Amplifier 50Ω 0.03 to 1 GHz The Big Deal Very wideband, 30 MHz 1 GHz Low NF over entire frequency band, 1.2 db Low current and low voltage (2.7V and 7.7 ma) Internal bypass switching
More informationTAT Ω phemt Adjustable Gain RF Amplifier
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block Product Features Gain, return loss and bias externally
More informationFeatures. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
More informationSKY LF: MHz Low-Noise, Low-Current Amplifier
DATA SHEET SKY67013-396LF: 600-1500 MHz Low-Noise, Low-Current Amplifier Applications ISM band receivers General purpose LNAs Features Low NF: 0.85 db @ 900 MHz Gain: 14 db @ 900 MHz Flexible supply voltage
More informationQPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvo s E-pHEMT process, this amplifier delivers exceptional performance
More informationMonolithic Amplifier EHA-163L+ Low Current, Wideband, Flat Gain. 50Ω DC to 16 GHz. The Big Deal
Low Current, Wideband, Flat Gain Monolithic Amplifier 50Ω DC to 16 GHz The Big Deal Super Wideband, DC to 16 GHz Excelent Gain Flatness, ±0.75 up to 12 GHz Low Current, 20 ma CASE STYLE: MC1630-1 Product
More informationCMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
More informationMMA C3 6-22GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vdd=5V P3dB: 19.5 dbm @Vdd=5V Gain: 14 db Vdd =3 to 6 V Ids = 130 ma Input and Output Fully Matched to 50 Ω Applications: Communication systems Microwave
More informationPreliminary Datasheet
Device Features This can be operated at Vd of 3.0V N.F = 0.78 db @ 1850MHz at Demo board 31.5 dbm Output IP3 at 0dBm/tone at 1850MHz 15.6 db Gain at 1850MHz 17.7 dbm P1dB at 1850 MHz Lead-free/Green/RoHS
More informationFeatures. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
v2.917 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multipoint Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram High Output IP3: +28 dbm Single
More informationMAAL DIESMB. Low Noise Amplifier DC - 28 GHz. Features. Functional Schematic 1. Description. Pin Configuration 2. Ordering Information. Rev.
MAAL-11141-DIE Features Ultra Wideband Performance Noise Figure: 1.4 db @ 8 GHz High Gain: 17 db @ 8 GHz Output IP3: 28 dbm @ 8 GHz Bias Voltage: V DD = - V Bias Current: I DSQ = 6 - ma Ω Matched Input
More informationHMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz
v1.65 Typical Applications The HMC471MSG / HMC471MSGE is a dual RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
More informationMMA GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 1 2 3 4 5 32 31 30 29 28 27 26 25 24
More informationTQP DC-6 GHz Gain Block
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE CATV Point to Point General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram DC-6000 MHz 15.4 db Gain @ 1.9 GHz 4 3.6
More informationMMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
More informationBroad Band: 5 to 300 MHz 5 to 300 MHz bandwidth covers primary CATV applications such as DOCSIS 3.1
Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω 5 to 300 MHz The Big Deal High IP3 Flat Gain / Excellent Return Loss Low Noise Figure SOT-89 PACKAGE Product Overview (RoHS compliant) is an advanced
More informationGND N/C GND RF IN N/C N/C N/C GND
MAAP-11246 Features High Gain: 23 db P1dB: dbm P SAT : 33 dbm IM3 Level: -22 dbc @ P OUT 27 dbm/tone Power Added Efficiency: 24% at P SAT Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant Description
More informationFeatures. Specifications. Applications
MGA-3889 4MHz - 26MHz Flat Gain High Linearity Gain Block Data Sheet Description Avago Technologies MGA-3889 is a broadband, flat gain, high linearity gain block MMIC amplifier achieved through the use
More informationSKY LF: GHz High Linearity, Active Bias Low-Noise Amplifier
DATA SHEET SKY67102-396LF: 2.0-3.0 GHz High Linearity, Active Bias Low-Noise Amplifier Applications CDMA, WCDMA, TD-SCDMA, WiMAX, and LTE cellular infrastructure Ultra low-noise systems Features Ultra
More informationDC to 1000 MHz IF Gain Block ADL5530
DC to MHz IF Gain Block ADL3 FEATURES Fixed gain of 6. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power
More informationQPL9096 Ultra Low-Noise, Bypass LNA
General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
More informationFeatures. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
More informationMMA M GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN
More informationTQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information
Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz
More informationHMC639ST89 / 639ST89E
Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
More informationAmplifier Configuration
Dual CATV Broadband High Linearity SiGe HBT Amplifier CGA-33Z DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-33Z is a high performance Silicon Germanium
More information