GHz RF Front-End Module. o C
|
|
|
- Annabel Murphy
- 5 years ago
- Views:
Transcription
1 Functional Block Diagram Features 4 High Efficient Power Amplifier: 41% at Pout= 23dBm -PA P-1dB: +21dBM +3.3V-PA Low Noise Amplifier (NF typical 1.8dB)-LNA Low Insertion Loss:0.4dB@ 2.45GHz-Switch QFN 3x3mm 16L with thermal ground Ultra small plastic package. MSL1 package, 260 per JEDEC J-STD-020 Lead (Pb)-free RoHS (Restriction of Hazardous Substances) compliant packaging. Applications Bluetooth PA. (Class 1) Wireless Data Terminal. Wireless Audio. Portable Battery Powered Equipment. Caution: 1. Operation of this device in excess of any maximum rating as specified above may cause permanent damage to the device. 2. ESD Sensitive Device. Absolute Maximum Ratings Parameter Maximum Rating Unit VCC1, VCC2 and VCC3 Supply Voltage 0 to 6 V Vctrl, Vpd and Vpd Control Voltage 0 to 6 V Switch Control VC1, VC2-6.0 to +6.0 V RF Switch input Power (>500MHz) 33 dbm Storage Temperature -55 to +150 o C Power Supply Current 350 ma Pb RoHS COMPLIANT General Description The is a front-end MCM module and uses an advanced Gallium Arsenide (GaAs) process. The front-end module consists of a Power Amplifier (PA), Low-Noise Amplifier (LNA) and a RF single pole double throw (SPDT) Switch. This device makes it ideal for IEEE b/g, Bluetooth, 2.4Ghz Audio/Video, Wireless Data Terminal and portable battery powered equipment. The PA delivers +23dBm (maximum) output power with a high Power Added Efficiency (PAE) 41%. The noise figure of LNA is below 1.8dB. The RF SPDT Switch has very low insertion loss 0.6dB in the 2.4GHz to 2.5GHz range. The device is packaged in a QFN 3mm by 3mm 16L package 1/14
2 Specification Summary 1. Power Amplifier Tx-Mode (Power Amplifier+Switch) Parameter Min. Typical Max. Unit Condition Operating Frequency Range GHz Maximum Output Power dbm PA Supply Current 125 ma VCC1=VCC2=Vpd=3.3V, Vapc=3.3V, Pout=20dBm Power Added Efficiency 25 % Pout=20dBm, Harmonics: 2Fo, 3Fo -35,-32 dbc Pout=20dBm PA Small Signal Gain db P IN =-30dBm Quiescent Current 80 ma VCC1=VCC2=VCC3=3.3V Vpd=3.3V, Vapc=3.3V, P -1 db 21 dbm VCC1=VCC2=Vpd=3.3V, Vapc=3.3V Rx-mode (Low Noise Amplifier+Switch) Parameter Min. Typical Max. Unit Condition Operating Frequency Range 2.4 to 2.5 GHz Quiescent Current 7 ma VCC3=Vctrl=3.3V, Pin=-30 dbm Noise Figure 2.5 db Gain 11 db VCC3=Vctrl=3.3V, Pin=-30 dbm Notes: All measurements made in 50Ω system, unless otherwise specified. DC=500MHz. Tx-mode:VCC1=VCC2=VCC3=Vpd=Vapc=VC2=3.3V, VC1=Vctrl=0V Rx-mode:VCC1=VCC2=VCC3=VC1=Vctrl=3.3V, Vpd=Vapc=VC2=0V 2/14
3 2. RF SPDT Switch Parameter Min. Typ. Max. Unit Test Conditions Input Power +25dBm db DC 1.0GHz Insertion Loss db GHz db GHz Input Power +25dBm db DC 1.0GHz Isolation db GHz db GHz DC 1.0GHz VSWR GHz GHz Input Power for 1 db 30 dbm 2.5GHz compression Second Harmonics -75 dbc f=2.5ghz, Pin=25dBm Third Harmonics -80 dbc f=2.5ghz, Pin=25dBm Intermodulation Intercept Point (IIP3) Switch Time dbm ns For two tones (f=2.5ghz, 2.501GHz Input power +20dBm Control Current µa Input Power +25dBm 3. Low Noise Amplifier Parameter Min. Typical Max. Unit Condition Operating Frequency Range 2.4 to 2.5 GHz Quiescent Current 7 ma VCC3=Vctrl=3.3V, Pin=-30 dbm Noise Figure 1.8 db LNA Gain 13 db VCC3=Vctrl=3.3V, Pin=-30 dbm 3/14
4 Functional Pin Description Pin Configuration Name Pin # Description Pin 1 LNA-out 2 LNA output PA input. A matching network with DC block required. Vpd 3 Control the gain of PA VCC3 4 Supply voltage for LNA Vctrl 5 LNA ON/OFF control pin Vapc 6 Control the output power of PA LNA IN 7 LNA input RF1 8 RF Switch, RF path 1 VC2 9 RF Switch, ANT-RF2 Control Voltage ANT 10 RF Switch, RF I/O VC1 11 RF switch, ANT-RF1 Control Voltage NC 12 No connect RF2 13 RF Switch, RF path2 Pout 14 PA power out put pin Pout/Vcc2 15 PA 2 nd stage Vcc and Power output pin Vcc1 16 PA 1 st stage Vcc GND center pad This pin must be connected to ground 4/14
5 Performance Data 5/14
6 6/14
7 Typical Characteristics 7/14
8 20 S-Parameter of LNA Noise Figure vs. Frequency S-Parameter (db) Frequency (GHz) S11 S21 S22 VCC3=Vctrl=3.3V, Pin=-30dBm NF (db) Frequency (GHz) Switch Typical Characteristics (V cc=0v/3.0v, P in=0dbm) [Following RFC is pin10 ANT] 8/14
9 9/14
10 10/14
11 Application Circuit 11/14
12 Evaluation Board Layout Package Outline Drawing 12/14
13 Top Marking Information Tape and Reel Information 13/14
14 SMT Reflow Profile Handling Precaution To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice. Revision History Revision Released Date Description V3.0 6 th July 2011 The format is totally modified. 14/14
Specification Min. Typ. Max.
High Power Reflective GaAs SP4T Switch FMS2016-005 HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3 mm x 3 mm QFN Product Description The FMS2016-005 is a low loss, high power, linear single-pole four-throw
FMS W GaAs WIDEBAND SPDT SWITCH. Features. Product Description. Applications
10W GaAs Wideband SPDT Switch FMS2031-001 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description The FMS2031-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna
HIGH POWER SPDT SWITCH GaAs MMIC
HIGH POWER SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation
SKY , SKY LF: SP3T Switch for Bluetooth and b, g
DATA SHEET SKY325-349, SKY325-349LF: SP3T Switch for Bluetooth and 82.b, g Applications 82.b, g Bluetooth Zigbee TDMA/GSM/EDGE CDMA/WCDMA Other short-range wireless applications Simplified Block Diagram
BSW MHz-6000MHz High Linearity Reflective SPDT RF switch. Product Description. Package Type. Device Features - Common.
Product Description The BSW6321 is a reflective SPDT RF switch that can be used in high power and good performance WiMAX 802.16, WLAN 802.11 a/b/g/n/ac/ax and DOCSIS 3.0/3.1 applications. This device is
RF V TO 4.0V,915MHz Transmit/Receive
3.3V to 4.0V,9MHz Transmit/Receive Module RF639 3.3V TO 4.0V,9MHz Transmit/Receive Module Package: LGA, 8-Pin,.mm x.0mm Features Tx Output Power: dbm Separate 0 Tx/Rx Transceiver Interface Rx Insertion
SKY LF: PHEMT GaAs IC SP3T Switch GHz
DATA SHEET SKY1339-37LF: PHEMT GaAs IC SP3T Switch.1 3. GHz Features Positive low voltage control (/3 V) Low insertion loss (.5 db at.5 GHz) High isolation (5 db at.5 GHz) Simplified Block Diagram RF3
DISCONTINUED. Preliminary. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth and a/b/g DESCRIPTION FEATURES APPLICATIONS
μpg243tz GaAs Integrated Circuit SP3T Switch for Bluetooth and 82.a/b/g DESCRIPTION Preliminary Data Sheet The μpg243tz is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This
MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3
Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package
HIGH POWER SP3T SWITCH GaAs MMIC
HIGH POWER SP3T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1682MD7 is a GaAs SP3T switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1682MD7 features very low insertion loss, high isolation
CMOS 5GHz WLAN ac RFeIC WITH PA, LNA AND SPDT
CMOS 5GHz WLAN 802.11ac RFeIC WITH PA, LNA AND SPDT RX LEN 16 RXEN ANT 15 14 13 12 11 Description RFX8051 is a highly integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit) which incorporates
Dual-Band Wireless DPDT RF Switch
Dual-Band Wireless DPDT RF Switch RF SWITCH CG2164X3 DESCRIPTION The CG2164X3 is a GaAs MMIC DPDT (Double Pole Double Throw) switch for 2.5 GHz and 6 GHz dual-band wireless LAN applications PACKAGE 6-pin
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
Not For New Design FMS W GaAs phemt SPDT SWITCH. Product Description. Features. Applications
10W GaAs phemt SPDT Switch FMS2031-001 10W GaAs phemt SPDT SWITCH Package: 3 mm x 3 mm QFN Product Description The FMS2031-001 is a 10 W, Single-pole, Double-throw, (SPDT) GaAs phemt reflective antenna
SKY LF: PHEMT GaAs IC High-Power 4-CTL DPDT Switch LF 6 GHz
data sheet SKY13318-321LF: PHEMT GaAs IC High-Power 4-CTL DPDT Switch LF 6 GHz Features l Application 82.11a (5.2 5.8 GHz) and 82.11b, (2.4 GHz) diversity l Operating frequency LF 6 GHz l Positive low
SKY : 900 MHz Transmit/Receive Front-End Module
DATA SHEET SKY65313-21: 900 MHz Transmit/Receive Front-End Module Applications Automated meter reading Advanced metering infrastructure ISM systems Features Transmit output power > +30.5 dbm High efficiency
Table of Contents 1. Typical Application General Description Feature PIN Configuration PIN Description (I: Input, O: O
Document Title Data Sheet, with PA and LNA Revision History Rev. No. History Issue Date Remark 0.0 Initial issue. May, 2009 Objective 0.1 Change package from QFN3X3 12pin to QFN3X3 16 pin. Change mode
CMOS 5GHz WLAN ac RFeIC WITH PA, LNA AND SPDT
CMOS 5GHz WLAN 802.11ac RFeIC WITH PA, LNA AND SPDT RX LEN 16 RXEN ANT 15 14 13 12 11 Description RFX8051B is a highly integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit) which
Product Description VG111-F
Gain Ctrl Product Features 1.7 2.7 GHz bandwidth 26.6 db Attenuation Range +39.5 dbm Output IP3 +22 dbm P1dB Constant IP3 & P1dB over attenuation range Single voltage supply Pb-free 6mm 2-pin QFN package
RF1226 BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH
BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH Package Style: QFN, 12-pin, 2.0 mm x 2.0 mm x 0.55 mm Features Broadband Performance Low Frequency to 3.5 GHz Very Low Insertion Loss 0.25 db Typ at 0.90
SKY LF: GaAs SP2T Switch for Ultra Wideband (UWB) 3 8 GHz
DATA SHEET SKY1398-36LF: GaAs SPT Switch for Ultra Wideband (UWB) 3 8 GHz Features Positive voltage control (/1.8 V to /3.3 V) High isolation 5 for BG1, 5 for BG3 Low loss.7 typical for BG1,.9 for BG3
Absolute Maximum Ratings Parameter Rating Unit Max Input Power, OFDM Modulated, 3:1 Load VSWR +39 dbm Max Input Power, 2:1 VSWR +41 dbm ESD HBM Rating
1W GaAs phemt SPDT Switch FMS231-1 1W GaAs phemt SPDT SWITCH Package: 3mmx3mm QFN Product Description The FMS231-1 is a 1W, Single-pole, Double-throw, (SPDT) GaAs phemt reflective antenna switch. The switch
SKY LF: 300 khz 3 GHz Medium Power GaAs SPDT Switch
DATA SHEET SKY13268-344LF: 3 khz 3 GHz Medium Power GaAs SPDT Switch Applications Transceiver transmit-receive switching in GSM, CDMA, WCDMA, WLAN, Bluetooth, Zigbee, land mobile radio base stations or
RFFM8500Q. 4.9GHz to 5.85GHz a/n Front End Module. Features. Applications. Ordering Information
4.9GHz to 5.85GHz 802.11a/n Front End Module The RFFM8500Q provides a complete integrated solution in a single Front End Module (FEM) for WiFi 802.11a/n systems. The ultra small form factor and integrated
Absolute Maximum Ratings Parameter Rating Unit Voltage 6.0 V Maximum input power (0.6 GHz to 2.5 GHz), RF1, RF2 +28 dbm Operating temperature -30 to +
Product Overview The is a single-pole double-throw (SPDT) switch designed for general purpose switching applications which require very low insertion loss and medium power handling capability. The is ideally
Data Sheet, Rev. 2.2, April 2008 BGA622L7. Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection. Small Signal Discretes
Data Sheet, Rev. 2.2, April 2008 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection Small Signal Discretes Edition 2008-04-14 Published by Infineon Technologies AG, 81726
MAPS Digital Phase Shifter 4-Bit, GHz. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information 1
MAPS-1146 4-Bit, 8. - 12. GHz Features 4 Bit 36 Coverage with LSB = 22.5 Integrated CMOS Driver Serial or Parallel Control Low DC Power Consumption Minimal Attenuation Variation over Phase Shift Range
High Power SPDT RF Switch
High Power SPDT RF Switch RF SWITCH CG2409M2 DESCRIPTION The CG2409M2 is a GaAs MMIC high power SPDT (Single Pole Double Throw) switch which was designed for WiMAX and Wireless LAN applications FEATURES
MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated
INNOTION YP GHz-2.7GHz High Linearity Power Amplifier
Features 3dB Gain(Typ) 33dBm P -1dB @ VCC=V NC VCC1 VCC2 NC 16 1 14 13 RoHS & Pb-Free Product 2.% EVM WLAN @Pout=27dBm, VCC=V 3mA Quiescent Current@ VCC=V.V DC Operation Integrated Output Power Detector
SKY LF: GaAs Digital Attenuator 5-Bit, 1 db LSB 400 MHz 4 GHz
data sheet SKY12329-35LF: GaAs Digital Attenuator 5-Bit, 1 db LSB 4 MHz 4 GHz Applications l Transceiver transmit automatic level control or receive automatic gain control in WiMAX, GSM, CDMA, WCDMA, WLAN,
CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC
hot RFX2401C CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC Description 1 2 3 4 TXRX 17 VDD VDD DNC 16 15 14 13 12 11 10 ANT 9 The RFX2401C is a fully integrated, single-chip, single-die RFeIC (RF Front-end
CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC
CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC Description 17 1 2 3 4 TXRX VDD VDD D 16 15 14 13 12 11 10 ANT 9 The is a fully integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit)
MADS T. Schottky Limiter DC - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2.
Features 3 Terminal LPF Broadband Shunt Structure Low Slope Resistance, 7 Ω +3 dbm Peak and CW Power Handling.6 db Shunt Insertion Loss +2 dbm Flat Leakage Power Lead-Free 1. x 1.2 mm 6-lead TDFN Package
Preliminary Datasheet
Product Description The is a reflective SPDT RF switch that can be used in high power and good performance WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and Wireless Communication applications. This device
dbm Output Power at 1dB Compression 3.6GHz
Product Description Sirenza Microdevices SZA-344 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier
Preliminary Datasheet
Product Description The is a reflective SPDT RF switch that can be used in high power and good performance WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and Wireless Communication applications. This device
DISCONTINUED PG2413T6Z. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth TM and b/g DESCRIPTION FEATURES APPLICATIONS
GaAs Integrated Circuit SP3T Switch for Bluetooth TM and 802.11b/g DESCRIPTION Data Sheet The PG2413T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate
SPDT SWITCH GaAs MMIC
NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion
QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
.15 2.8 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the
SKY : MHz Transmit/Receive Front-End Module
DATA SHEET SKY65338-21: 450-470 MHz Transmit/Receive Front-End Module Applications Tetra radio Remote metering GSM WLL transmitters Features Transmit output power > +25 dbm High gain in transmit path:
Parameter Test Conditions Units Min. Typ. Max. RFC to T X RFC to R X. P IN = +23 dbm, AC 80 MHz / 256 QAM
Features 2.11a,n,ac Applications.9 db T X Insertion Loss 19 db R X Isolation 12 db R X Gain 2.2 db Noise Figure 1 ma Current - db EVM @ 23 dbm Input (2.11ac MHz / 256 QAM) Lead Free 2 mm 12-lead STQFN
L, S-BAND SPDT SWITCH
DESCRIPTION The µpg8tk is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and another L, S-band application. This device can operate control switching
SPDT SWITCH GaAs MMIC
SPDT SWITCH GaAs MMIC! GENERAL DESCRIPTION! PACKAGE OUTLINE The NJG1608KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. The NJG1608KB2 is suitable for switching
RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
RFSW1012SR. Broadband SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Ordering Information
Product Overview The is a single-pole double-throw (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the
Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
TGA2612-SM 6 12 GHz GaN LNA
Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
GHz RF Front-End Module (Low Current) Note: All information provided is subjected to change without prior notice.
Preliminary FM2422 dual-mode 82.11 b/g RF Front-End Module QFN WH378 Rev. 1 2.4-2.5 GHz RF Front-End Module (Low Current) Note: All information provided is subjected to change without prior notice. Product
MACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3
Features Integrated Directional Coupler Low Insertion Loss:.5 db @ Min. detectable power: -15 dbm @ Dynamic range: 45 db @ Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm 6-Lead TDFN Halogen-Free
TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM
LNA In. Input Match. LNA Vref. LNA Sel. RX Switch. TX Switch GND. PA Vcc2 GND GND. PA Out. Product Description. GaAs HBT GaAs MESFET InGaP HBT
3.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch RFFM6904 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Package: LGA, 32-pin, 8mm x 8mm x 1.2mm
2.4 GHz Linearized Power Amplifier
Rev.02 2.4 GHz Linearized Power Amplifier Introduction The PA2409 is a three-stage linearized power amplifier optimized for 802.11b/g wireless LAN (WLAN) applications in the 2.4 GHz band. While the device
915MHz Transmit/Receive Module
RF6599 915MHz Transmit/Receive Module This module is intended for 915MHz AMR solutions. It provides separate ports for Rx and Tx paths and two ports on the output for connecting a diversity solution or
RFFM V to 4.2V, ISM Band, 1W, 405MHz to 475MHz Transmit/Receive Module. Features. Applications. Ordering Information
RFFM6403 2.5V to 4.2V, ISM Band, 1W, 405MHz to 475MHz Transmit/Receive Module The RFFM6403 is a single-chip front end module (FEM) for applications in the 405MHz and 475MHz ISM Bands. The RFFM6403 addresses
SP3T SWITCH GaAs MMIC
NJG184K64 SP3T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG184K64 is a GaAs SP3T switch MMIC which is suitable for WLAN(82.11a/b/g/n/ac) and Bluetooth applications. This MMIC switches between a common
CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC
CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC Description 17 1 2 3 4 TXRX VDD VDD D 16 15 14 13 12 11 10 ANT 9 The RFX2401C is a fully integrated, single-chip, single-die RFeIC (RF Front-end Integrated
AS LF: GaAs IC High-Isolation Positive Control SPDT Nonreflective Switch LF to 4 GHz
DATA SHEET AS186-32LF: GaAs IC High-Isolation Positive Control SPDT Nonreflective Switch LF to 4 GHz Applications GSM, PCS, WCDMA, 2.4 GHz ISM and 3.5 GHz wireless local loop V1 J2 Features Positive voltage
Preliminary Datasheet
Product Description The is an absorptive SPDT 50Ω matched RF switch supporting bandwidths up to 6GHz. Its high linearity performance across the temperature range makes it ideally suited for use in 3G/4G/5G
TGS SM GHz High Power SPDT Reflective Switch
- 18 GHz High Power SPDT Reflective Switch Product Overview Qorvo s is a single-pole, double-throw (SPDT) reflective switch packaged in a 4x4mm ceramic, air-cavity QFN. Fabricated on Qorvo s QGaN25 0.25um
SKY : 900 MHz Transmit/Receive Front-End Module
DATA SHEET SKY65313-21: 9 MHz Transmit/Receive Front-End Module Applications Automated meter reading Advanced metering infrastructure ISM systems Features Transmit output power > +3.5 dbm High efficiency
SPDT SWITCH GaAs MMIC
NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion
Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
v2.917 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multipoint Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram High Output IP3: +28 dbm Single
DATA SHEET SE2431L: 2.4 GHz ZigBee/ Front-End Module Preliminary Datasheet. Product Description. Applications
Applications Smart Meters In-home appliances Smart thermostats Features Integrated PA with up to 24 dbm output power Integrated LNA with programmable bypass Integrated antenna switching with Tx and Rx
TQL5000 Data Sheet. LNA for 5 GHz UNII Band a Systems. Functional Block Diagram. Features. Applications. Product Description.
Functional Block Diagram RF Input Vdd Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure High Gain Low Current: 8mA Typical @ 3V 50-ohm Input and Output Match GaAs phemt Technology Leadless 1.3
QPM GHz Multi-Chip T/R Module
QPM21 Product Description The QPM21 is a GaAs multi chip module (MCM) designed for S-Band radar applications within the 2.5-4. GHz range. The device consists of a T/R switch, a transmit path which is a
QPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
0.15 2.8 GHz High Power GaN SP3T Switch Product Overview Qorvo s is a Single-Pole, Triple Throw (SP3T) switch fabricated on Qorvo s QGaN25 5um GaN on SiC production process. Operating from 0.15 to 2.8
MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
SKY : 169 to 170 MHz Transmit/Receive Front-End Module
PRELIMINARY DATA SHEET SKY66100-11: 169 to 170 MHz Transmit/Receive Front-End Module Applications Automated meter reading Advanced metering infrastructure ISM systems Features Transmit output power: >+7
HIGH POWER SP4T SWITCH GaAs MMIC
NJG189ME7 HIGH POWER SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG189ME7 is a high power SP4T switch MMIC suitable for LTE-U / LAA, WLAN, and LTE applications. This switch features very low insertion
CMOS 5GHz WLAN a/n/ac RFeIC WITH PA, LNA, AND SPDT
CMOS 5GHz WLAN 802.11a/n/ac RFeIC WITH PA, LNA, AND SPDT Description RX 1 2 LNA_EN 16 ANT 15 14 13 12 11 RFX8055 is a highly integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit)
SKY LF: 20 MHz-6.0 GHz GaAs SP4T Switch
DATA SHEET SKY13322-375LF: 2 MHz-6. GHz GaAs SP4T Switch Applications Multiband telecommunications up to 6 GHz Features Broadband frequency range: 2 MHz to 6. GHz Low insertion loss:.45 @ 1 GHz Very high
Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
![Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]](/thumbs/88/115381636.jpg "Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]")
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Low loss broadband performance High isolation Non-reflective design Integrated 3:8 TTL decoder Pb-free RoHs compliant 4x4 SMT package Description The CMD236C4 is a broadband
TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
RFX8425: 2.4 GHz CMOS WLAN/Bluetooth Dual-Mode RFeIC with PA, LNA, and SP3T
DATA SHEET RFX8425: 2.4 GHz CMOS WLAN/Bluetooth Dual-Mode RFeIC with PA, LNA, and SP3T Applications Smartphones, feature phones. and MIDs with WLAN/Bluetooth WLAN/Bluetooth platforms requiring shared antenna
SZP-5026Z GHz 2W InGaP Amplifier
Product Description Sirenza Microdevices SZP-Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated
Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
![Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V](/thumbs/90/101370216.jpg "Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V")
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db
Features Integrated Directional Coupler Low Insertion Loss: 0.15 db @ 4 GHz Min. detectable power: -15 dbm @ 4 GHz Dynamic range: 45 db @ 4 GHz Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm
SKY : 2.4 GHz Transmit/Receive Front-End Module with Integrated Low-Noise Amplifier
DATA SHEET SKY65344-21: 2.4 GHz Transmit/Receive Front-End Module with Integrated Low-Noise Amplifier Applications 2.4 GHz ISM band radios ZigBee FEMs IEEE 802.15.4 applications Features Transmit output
XR1015-QH-EV1. Receiver GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2,3. Ordering Information 1
1 11 1 3 1 19 XR115-QH 1-1 GHz Rev. V1 Features Integrated LNA, Mixer and LO Buffer Amplifier.5 db Noise Figure 1. db Conversion Gain Lead-Free mm lead QFN Package 1% RF, DC and NF Testing RoHS* Compliant
RFX8053: CMOS 5 GHz WLAN ac RFeIC with PA, LNA, and SPDT
DATA SHEET RFX8053: CMOS 5 GHz WLAN 802.11ac RFeIC with PA, LNA, and SPDT Applications 802.11a/n/ac WiFi devices Smartphones Tablets/MIDs Gaming Consumer electronics Notebooks/netbooks/ultrabooks Mobile/portable
SKY LF: 20 MHz-5 GHz, 7 W SPDT Switch
DATA SHEET SKY13299-321LF: 2 MHz-5 GHz, 7 W SPDT Switch Applications RFC WiMAX and WLAN systems Features VCTL1 J1 VCTL2 J2 Positive voltage operation: /3 to /5 V Low insertion loss:.5 typical @ 3.5 GHz
SZA-2044 / SZA-2044Z GHz 5V 1W Power Amplifier
Product Description Sirenza Microdevices SZA-244 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier
SKY LF: 0.1 to 3.8 GHz SP8T Antenna Switch
DATA SHEET SKY13418-485LF: 0.1 to 3.8 GHz SP8T Antenna Switch Applications Any 2G/3G/4G antenna diversity or LTE (TDD/FDD) transmit/receive system for which GSM transmit is not required Features Broadband
RFFM V to 5.0V, 2.4GHz to 2.5GHz b/g/n/ac WiFi Front End Module. Features. Applications. Ordering Information
3.0V to 5.0V, 2.4GHz to 2.5GHz 802.11b/g/n/ac WiFi Front End Module The RFFM4293 provides a complete integrated solution in a single front end module (FEM) for WiFi 802.11b/g/n/ac and Bluetooth systems.
MASW SPDT High Isolation Terminated Switch GHz Rev. V4. Features. Functional Block Diagram. Description. Pin Configuration 3
Features Positive Voltage Control High Isolation: 62 db @ 1 GHz 65 db @ 2 GHz Low Insertion Loss: 0.65 db @ 1 GHz 0.70 db @ 2 GHz 50 Ω Internal Terminations Fast Settling for Low Gate Lag requirements
RFPA TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features 0.5 W CW Output Power at 3.6 V 1 W CW Output Power at 5 V 32 db Small Signal Gain at 900 MHz
SPDT SWITCH GaAs MMIC
NJG115K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG115K75 is a 1bit control SPDT switch. The switch is used for WLAN system. The switch features low insertion loss, high isolation for high frequency
SKY : 2400 to 2483 MHz Transmit/Receive Front-End Module
DATA SHEET SKY65383-11: 2400 to 2483 MHz Transmit/Receive Front-End Module Applications Automated meter reading Advanced metering infrastructure ISM systems TR VREF1/VREF2 PA CTX CSD CRX Control Logic
XP1080-QU-EV1. Power Amplifier GHz. Functional Schematic. Features. Description. Pin Configuration 1. Ordering Information. Rev.
2 3 4 5 6 7 8 16 15 14 13 12 11 10 Features Linear On-Chip Power Detector Output Power Adjust 25.0 db Small Signal Gain +27.0 dbm P1dB Compression Point +38.0 dbm OIP3 Lead-Free 7 mm 28-lead SMD Package
QPA GHz GaAs Low Noise Amplifier
General Description Qorvo s QPA9 is a packaged, high-performance, low noise amplifier fabricated on Qorvo s production 9 nm phemt (QPHT9) process. Covering 7 GHz, the QPA9 provides db small signal gain
RFFM8511TR7. 4.9GHz to 5.85GHz a/n/ac WiFi Front End Module. Features. Applications. Ordering Information
4.9GHz to 5.85GHz 802.11a/n/ac WiFi Front End Module The provides a complete integrated solution in a single front end module (FEM) for WiFi 802.11a/n/ac systems. The ultra-small factor and integrated
RFFM8216TR7-5K. 2.4 GHz Integrated Wi-Fi Front-End Module
RFFM8216 2.4 GHz Integrated Wi-Fi Front-End Module Product Overview The RFFM8216 provides a complete integrated solution in a single front end module (FEM) for WiFi 802.11b/g/n/ac systems.performance is
QPL7210TR7. 2.4GHz Wi-Fi LNA+BAW Receive Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
2.4GHz Wi-Fi LNA+BAW Receive Module Product Overview The provides a complete integrated receive solution in a single placement front end module (FEM) for Wi-Fi 802.11a/n/ac systems. The full integration
Features. = +25 C, Vcc = 5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Units
v2.717 MMIC AMPLIFIER, 4 - GHz Typical Applications The is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
SKY LF: GHz SP3T Switch, 50 Ω Terminated
DATA SHEET SKY13408-465LF: 1.0 6.0 GHz SP3T Switch, 50 Ω Terminated Applications WiMAX 802.16 Dual-band WLANs (802.11 a/b/g/n) LTE/4G systems WLAN 802.11a/c 5 GHz video distribution Features 50 Ω matched
SP4T SWITCH GaAs MMIC
SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1519KC1 is a GaAs high power SP4T switch MMIC for antenna switch of dual mode cellular phone application such as GSM/DCS18. This switch is designed for an antenna
1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1
DESCRIPTION GaAs INTEGRATED CIRCUIT PG2250T5N 1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1 The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes