QPL9065SR. Ultra Low-Noise 2-Stage Bypass LNA. Product Description. Product Features. Applications. Functional Block Diagram. Ordering Information
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1 QPL965 Product Description The QPL965 is a high-linearity, ultra-low noise 2-stage gain block amplifier module with a bypass mode functionality integrated to the second stage in the product. At 1.95 GHz, the amplifier, under high gain mode, typically provides 37.5 db gain, +36 dbm OIP3, and.55 db noise figure while drawing 16 ma current from a +5 V supply. The component also provides high performance in the low gain mode with 17.5 db gain,.55db noise figure and +33 dbm OIP3 while drawing 7 ma current. The QPL965 uses a high performance E-pHEMT process. This low noise amplifier contains an internal active bias to maintain high performance over temperature. The QPL965 covers the GHz frequency band and is targeted for wireless infrastructure. The QPL965 is housed in a 3.5 x 3.5 mm SMT package. 16 Pin 3.5 X 3.5 mm Leadless SMT Package Product Features GHz Operational bandwidth 2 nd stage LNA with integrated bypass mode Ability to turn LNA and bypass mode OFF Ultra low noise,.55 db at 1.95 GHz 37.5 db Gain at 1.95 GHz, 17.5 db in +36 dbm Output IP3 in +33 dbm Output IP3 in Positive supply only, +3.3 to +5 V 1.8V CMOS TTL logic compatible on pins 5 & 8 Functional Block Diagram Applications Pin 1 Reference Mark VDD1 VDD Base Station Receivers Tower Mount Amplifiers Repeaters FDD-LTE, TDD-LTE, WCDMA General Purpose Wireless RF IN 2 11 RF OUT VPD NC VBYP Backside Paddle - RF/DC Ordering Information Part No. QPL965SR QPL965TR13 QPL965PCB41 Description 1 pieces on a 7 reel pieces on a 13 reel GHz Tuned Evaluation Board DATA SHEET December 2, 216 Subject to change without notice - 1 of 9 -
2 Absolute Maximum Ratings Parameter Range / Value Units Storage Temperature 65 to C Drain Voltage (VDD) +7 V Input Power (CW) +22 dbm Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. QPL965 Recommended Operating Conditions Parameter Min Typ Max Units Supply Voltage V TCASE 4 Tj at TCASE max +149 C Electrical specifications are measured under bias, signal and temperature conditions as specified. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VDD = +5 V, Temp. = + C. Parameter Conditions Min Typ Max Units Operational Frequency Range MHz Test Frequency 195 MHz Gain LNAs ON, Bypass OFF db Input Return Loss LNAs ON, Bypass OFF 12.5 db Output Return Loss LNAs ON, Bypass OFF db Noise Figure LNAs ON, Bypass OFF.55.8 db Output P1dB LNAs ON, Bypass OFF (1) +2.8 dbm LNAs ON, Bypass OFF, Output IP3 Pout=+5 dbm/tone, Δf=1 MHz dbm Gain LNA1 ON, Bypass ON 17.5 db Input Return Loss LNA1 ON, Bypass ON 11.5 db Output Return Loss LNA1 ON, Bypass ON 12 db Noise Figure LNA1 ON, Bypass ON.55.8 db Output P1dB LNA1 ON, Bypass ON +18 dbm LNA1 ON, Bypass ON, Output IP3 Pout=+5 dbm/tone, Δf=1 MHz dbm Control Voltage, VPD, VBYP V IH V V IL.63 V LNAs ON, Bypass OFF ma Current, ID LNA1 ON, LNA2 OFF, Bypass ON ma LNAs OFF, Bypass OFF 5 ma Thermal Resistance, θjc High gain Mode (Channel to case) 42 C/W Low gain Mode (Channel to case) 7 C/W Notes: 1. P1dB is not measured in production test. This min spec is calculated based on design confidence. Control Truth Table State 1 LNA1 OFF, LNA2 OFF, Bypass OFF VPD VBYP LNA1 ON, LNA2 ON, Bypass OFF 1 LNA1 ON, LNA2 OFF, Bypass ON 1 1 LNA1 OFF, LNA2 OFF, Bypass ON DATA SHEET December 2, 216 Subject to change without notice - 2 of 9 -
3 QPL965 Switching Speed (1) VPD VBYP State 5% of Vctrl to 9% of RF 5% of Vctrl to 1% of RF Units LNA1 ON, LNA2 ON, Bypass OFF 1 1 LNA1 OFF, LNA2 OFF, Bypass ON LNA1 ON, LNA2 ON, Bypass OFF 1 LNA1 ON, LNA2 OFF, Bypass ON 1 1 LNA1 OFF, LNA2 OFF, Bypass ON 1 LNA1 ON, LNA2 OFF, Bypass ON -4 C C C -4 C C C Note: 1. To achieve the fast switching speed listed, placement of R8 and C13 are critical. Refer to pg. 4 for EVB schematic and BOM. ns DATA SHEET December 2, 216 Subject to change without notice - 3 of 9 -
4 QPL965 QPL965 Evaluation Board ( GHz tuned) R2 C12 J3 V DD R2 J3 V DD C8 C12 (63) C7 J8 R1 C6.1 uf C5 C8 C7 L2 L5 R1 C6 C5.1 uf 1 pf L2 L5 1 pf J1 C1 L3 L4 U1 R9 R1 C2 J U1 V DD1 V DD2 R3 C1 R5 C11 R7 J1 RF Input C1 L1 L4 C9 1pF 1 RF IN RF OUT R9 R1 C2 J2 RF Output V PD1 V PD2 V BYP R3 J6 C3 C4 J7 J4 V PD R5 C1 1 pf C11 1 pf R7 J5 V BYP See Evaluation Board PCB Information section for PCB material and stack-up. Bill of Material QPL965 Evaluation Board Reference Des. Value Description Manuf. Part Number n/a n/a PCB Qorvo U1 n/a 2-Stage Bypass LNA Qorvo QPL965 R1, 2, 3, 5, 7 Ω RES, 42, +/%, 1/16W Various R1 39K RES, 42, +/%, 1/16W Various C1.5 pf CAP, 42, +/-.1pF, 5V, CG Murata GJM55C1HR5BB1D R9 5.1 Ω RES, 42, +/%, 1/16W various L1 1.5 nh IND, 42, +/-.1nH, 1mA Murata LQPMN1N5B2D L4 6.8 nh IND, 42, +/-2%, 7mA Murata LQGHS6N8J2 C2, 3, 4, 5, 7 1 pf CAP, 42, +/%, 5V Various C6, 8.1 uf CAP, 42, 2%, 16V, Y5V Various C9 1 pf CAP, 21, 2%, 5V Murata GRM335C1H1GA1 C uf CAP, 63, 2%, 1V, Y5V Various C1, 11 1 pf CAP, 42, 2%, 5V various L2 2.2 nh IND, 42, +/-.2nH, 1mA Murata LQWAN2N2C1 L5 18 nh IND, 63, 5% Coilcraft 63CS-18NXJL DATA SHEET December 2, 216 Subject to change without notice - 4 of 9 -
5 QPL965 Performance Plots Test conditions unless otherwise noted: VDD = +5 V, Temp.= 5 Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency 45 3 S22 (db) 35 S11 (db) Gain (db) Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency 1 5 S22 (db) S11 (db) Gain (db) OIP3 vs. Frequency OIP3 vs. Frequency P1dB vs. Frequency P1dB vs. Frequency Noise Figure (db) Noise Figure vs Frequency DATA SHEET December 2, 216 Subject to change without notice Noise Figure vs Frequency Noise Figure (db) 3 17 P1dB (dbm) OIP3 (dbm) OIP3 (dbm) 4 P1dB (dbm) of
6 QPL965 Performance Plots (VDD = 3.3V) Test conditions unless otherwise noted: VDD = +3.3 V, IDD(high gain mode) = 98mA, IDD(low gain mode) = 55mA, Temp.= 5 Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency 45 4 Gain (db) S11 (db) -1 S22 (db) Gain vs. Frequency Low gain Mode Input Return Loss vs. Frequency Output Return Loss vs. Frequency Low Gain mode Gain (db) 1 S11 (db) -1 S22 (db) OIP3 vs Frequency OIP3 vs Frequency P1dB vs Frequency OIP3 (dbm) OIP3 (dbm) P1dB (dbm) P1dB vs Frequency Noise Figure vs Frequency Noise Figure vs Frequency P1dB (dbm) 13 Noise Figure (db) Noise Figure (db) DATA SHEET December 2, 216 Subject to change without notice - 6 of 9 -
7 QPL965 Pin Configuration and Description Pin 1 Reference Mark VDD1 VDD RF IN 2 11 RF OUT Pin No. Label Description 1,3,4,7,9,1,12,14, RF/DC Ground pin. 2 RFin RF input pin. Internally DC blocked. 5 VPD Power Down control for LNAs. Refer to truth table on pg. 2. Voltage should not exceed 3V. Recommended that VDD1 is applied before the control voltage. 6 NC No internal connection but can be grounded for mounting integrity. 8 VBYP Bypass mode enable pin for LNA2. Refer to truth table on pg. 2. Voltage should not exceed 3V. Recommended that VDD1 is applied before the control voltage. 11 RFout RF output pin. External DC block required. 13 VDD2 Supply voltage pin for LNA2. 16 VDD1 Supply voltage pin for LNA1. Backside Paddle RF/DC RF/DC Ground. Follow recommended via pattern and ensure good solder attach for best thermal and electrical performance. Evaluation Board PCB Information VPD NC VBYP Backside Paddle - RF/DC Qorvo PCB Material and Stack-up.1".62" ±.6" Finished Board Thickness.1" Rogers 435B Rogers 445F Rogers 435B 1 oz. Cu top layer 1 oz. Cu inner layer 1 oz. Cu inner layer 1 oz. Cu bottom layer 5 ohm line dimensions: width =.2, spacing =.32 DATA SHEET December 2, 216 Subject to change without notice - 7 of 9 -
8 QPL965 Package Marking and Dimensions QPL965 Trace Code Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Dimension and tolerance formats conform to ASME Y14.4M The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-12. PCB Mounting Pattern 3.85 REF PIN1 (16X).53 x typ x REF RECOMMENDED LAND PATTERN RECOMMENDED LAND PATTERN MASK Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. 4. Do not remove or minimize via hole structure in the PCB. Thermal and RF grounding is critical. 5. We recommend a.35mm (#8/.135") diameter bit for drilling via holes and a final plated thru diameter of. mm (.1 ). 6. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. DATA SHEET December 2, 216 Subject to change without notice - 8 of 9 -
9 QPL965 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1C ESDA / JEDEC JS ESD Charged Device Model (CDM) Class C3 JEDEC JESD22-C11F MSL Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-2 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (26 C max. reflow temp.) and tin/lead (245 C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: Electrolytic Plated Au over Ni RoHS Compliance This part is compliant with the 211/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2/863/EU. This product also has the following attributes: Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements. Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (CH12Br42) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: Tel: customer.support@qorvo.com For technical questions and application information: sjcapplications.engineering@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 216 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. DATA SHEET December 2, 216 Subject to change without notice - 9 of 9 -
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Product Description Qorvo s TGL2226 SM is a wideband, 6 bit digital attenuator fabricated using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from.1 15 GHz, the TGL2226 SM offers a low
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Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM
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Product Overview The is an HBT RF balanced amplifier IC operating as a return path amplifier capable of supporting DOCSIS 3.1 applications. This IC is designed to provide a low noise, high gain option
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Applications Base stations / Repeaters High Power Amplifiers 2G / 3G / 4G Wireless Infrastructure Femtocells LTE / WCDMA / CDMA 20 Pin 5x5 mm QFN Package Product Features Functional Block Diagram 700-2700
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Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
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QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
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More informationTQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description
Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless Product Features 3-pin SOT-89 Package Functional Block Diagram 4-4 MHz +27.5 dbm P1dB +44 dbm Output IP3 GND 4 17.8
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Applications LTE handsets, data cards & mobile routers Band 7 2500-2570 MHz Uplink 2620-2690 MHz Downlink 8 Pin 1.6 x 2.0 mm Package Product Features Highly Selective LowDrift BAW Duplexer Low Insertion
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Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features Functional Block Diagram 700-4000 MHz +32.8 dbm
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Applications 3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters ISM Infrastructure Product Features 28-pin 6x6 mm leadless SMT package Functional Block Diagram 0.6-1.0 GHz Frequency Range 31.5
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Product Overview The Qorvo QPF4200 is an integrated front end module (FEM) designed for Wi-Fi 802.11ax systems. The compact form factor and integrated matching minimizes layout area in the application.
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Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE Test Equipments and Sensors IF and Applications General Purpose Wireless 24-pin 4x4mm leadless QFN package Product Features Functional Block
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