QPA1003P 1 8 GHz 10 W GaN Power Amplifier
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1 QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from 1 8 GHz and typically provides 1 W saturated output power with power-added efficiency of 3% and large-signal gain of 25 db. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA13P is matched to 5Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands. Lead-free and RoHS compliant. Evaluation boards are available upon request. Product Features Frequency Range: 1 8 GHz POUT: 4 PIN = dbm PAE: 3 PIN = dbm Large Signal Gain: 25 PIN = dbm Small Signal Gain: 3 db Bias: VD = +28 V, IDQ = 65 ma, VG = 2.2 V Typical Package Dimensions: 5. x 6. x 1.76 mm Process Technology: QGaN Functional Block Diagram RF In 23 RF Out Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Electronic Warfare (EW) Radar Communications Test Instrumentation Ordering Information Part No. ECCN Description QPA13P 3A1.b.2.b GHz 1 W GaN Power Amplifier Data Sheet Rev. C, March 1, of 2 -
2 QPA13P 1 8 GHz 1 W GaN Power Amplifier Electrical Specifications Test conditions unless otherwise noted: 25 C, VD = +28 V, IDQ = 65 ma, VG = 2.2 V Typical,. Parameter Min Typ Max Units Operational Frequency Range 1 8 GHz Output PIN = dbm Power Added PIN = dbm Small Signal Gain Input Return Loss Output Return Loss Frequency = 1 GHz 39.7 Frequency = 4 GHz 4.7 dbm Frequency = 8 GHz 39.9 Frequency = 1 GHz 47.5 Frequency = 4 GHz Frequency = 8 GHz 3.5 Frequency = 1 GHz 31.5 Frequency = 4 GHz.7 Frequency = 8 GHz 31.4 Frequency = 1 GHz 12.7 Frequency = 4 GHz 12.1 Frequency = 8 GHz 9.8 Frequency = 1 GHz 17.5 Frequency = 4 GHz 6.9 Frequency = 8 GHz 11.4 Small Signal Gain Temperature Coefficient -.4 db/ C Output Power Temperature Coefficient -.14 dbm/ C % db db db Recommended Operating Conditions Parameter Value / Range Drain Voltage (VD) +28 V Drain Current (IDQ) 65 ma Gate Voltage (VG) 2.2 V (Typ.) Temperature (TBASE) 4 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Data Sheet Rev. C, March 1, of 2 -
3 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () P OUT vs. Frequency vs. V D I DQ = 65 ma Vd=V Vd=25V Vd=28V P IN = dbm PAE vs. Frequency vs. V D I DQ = 65 ma Vd=V Vd=25V Vd=28V P IN = dbm Drain Current (ma) Drain Current vs. Frequency vs. V D I DQ = 65 ma Vd=V Vd=25V Vd=28V P IN = dbm Gate Current (ma) Gate Current vs. Frequency vs. V D P IN = dbm I DQ = 65 ma Vd=V Vd=25V Vd=28V P OUT vs. Frequency vs. I DQ P IN = dbm Idq=4mA Idq=65mA V D = 28 V PAE vs. Frequency vs. I DQ P IN = dbm V D = 28 V Idq=4mA Idq=65mA Data Sheet Rev. C, March 1, of 2 -
4 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () Drain Current (ma) Drain Current vs. Frequency vs. I DQ V D = 28 V P IN = dbm Idq=4mA Idq=65mA Gate Current (ma) Gate Current vs. Frequency vs. I DQ P IN = dbm V D = 28 V Idq=4mA Idq=65mA P OUT vs. Frequency vs. P IN V D = 28 V, I DQ = 65 ma Pin=5dBm Pin=1dBm Pin=13dBm Pin=dBm Pin=16dBm Pin=17dBm PAE vs. Frequency vs. P IN V D = 28 V, I DQ = 65 ma Pin=5dBm Pin=1dBm Pin=13dBm Pin=dBm Pin=16dBm Pin=17dBm Drain Current (ma) Drain Current vs. Frequency vs. P IN V D = 28 V, I DQ = 65 ma Pin=5dBm Pin=1dBm Pin=13dBm Pin=dBm Pin=16dBm Pin=17dBm Gate Current (ma) Gate Current vs. Frequency vs. P IN V D = 28 V, I DQ = 65 ma Pin=5dBm Pin=13dBm Pin=16dBm Pin=1dBm Pin=dBm Pin=17dBm Data Sheet Rev. C, March 1, of 2 -
5 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () P OUT vs. Frequency vs. Temp P IN = dbm V D = 28 V, I DQ = 65 ma -4 C 25 C 85 C PAE vs. Frequency vs. Temp V D = 28 V, I DQ = 65 ma P IN = dbm -4 C 25 C 85 C Drain Current (ma) Drain Current vs. Frequency vs. Temp P IN = dbm -4 C 25 C 85 C V D = 28 V, I DQ = 65 ma Gate Current (ma) Gate Current vs. Frequency vs. Temp P IN = dbm V D = 28 V, I DQ = 65 ma -4 C 25 C 85 C P OUT vs. P IN vs. Freq GHz 2GHz 4GHz 6GHz 8GHz V D = 28 V, I DQ = 65 ma PAE vs. P IN vs. Freq V D = 28 V, I DQ = 65 ma GHz 2GHz 4GHz 6GHz 8GHz Data Sheet Rev. C, March 1, of 2 -
6 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () Drain Current (ma) Drain Current vs. P IN vs. Freq V D = 28 V, I DQ = 65 ma GHz 2GHz 4GHz 6GHz 8GHz Gate Current (ma) Gate Current vs. P IN vs. Freq V D = 28 V, I DQ = 65 ma 1GHz 2GHz 4GHz 6GHz 8GHz P OUT vs. P IN vs. Freq GHz 2GHz 4GHz 6GHz 8GHz V D = 28 V, I DQ = 4 ma PAE vs. P IN vs. Freq V D = 28 V, I DQ = 4 ma GHz 2GHz 4GHz 6GHz 8GHz Drain Current (ma) Drain Current vs. P IN vs. Freq V D = 28 V, I DQ = 4 ma GHz 2GHz 4GHz 6GHz 8GHz Gate Current (ma) Gate Current vs. P IN vs. Freq V D = 28 V, I DQ = 4 ma 1GHz 2GHz 4GHz 6GHz 8GHz Data Sheet Rev. C, March 1, of 2 -
7 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () P OUT vs. P IN vs. V D Freq. = 4 GHz V 25V 28V 2 I DQ = 65 ma PAE vs. P IN vs. V D Freq. = 4 GHz V 25V 28V 5 I DQ = 65 ma Drain Current (ma) Drain Current vs. P IN vs. V D Freq. = 4 GHz V 25V 28V 2 I DQ = 65 ma Gate Current (ma) Gate Current vs. P IN vs. V D Freq. = 4 GHz I DQ = 65 ma V 25V 28V P OUT vs. P IN vs. I DQ Freq. = 4 GHz mA 65mA 2 V D = 28 V PAE vs. P IN vs. I DQ Freq. = 4 GHz 4mA 65mA 5 V D = 28 V Data Sheet Rev. C, March 1, of 2 -
8 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () Drain Current (ma) Drain Current vs. P IN vs. I DQ Freq. = 4 GHz mA 65mA V D = 28 V Gate Current (ma) Gate Current vs. P IN vs. I DQ Freq. = 4 GHz V D = 28 V 4mA 65mA P OUT vs. P IN vs. Temperature Freq. = 1 GHz C 25 C 85 C V D = 28 V, I DQ = 65 ma PAE vs. P IN vs. Temperature Freq. = 1 GHz -4 C 25 C 85 C V D = 28 V, I DQ = 65 ma Drain Current (ma) 1 Drain Current vs. P IN vs. Temp Freq. = 1 GHz C 25 C 85 C 2 V D = 28 V, I DQ = 65 ma Gate Current (ma) Gate Current vs. P IN vs. Temp 2 18 Freq. = 1 GHz V D = 28 V, I DQ = 65 ma C 25 C 85 C Data Sheet Rev. C, March 1, of 2 -
9 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () P OUT vs. P IN vs. Temperature Freq. = 4 GHz C 25 C 85 C V D = 28 V, I DQ = 65 ma PAE vs. P IN vs. Temperature Freq. = 4 GHz -4 C 25 C 85 C 5 V D = 28 V, I DQ = 65 ma Drain Current (ma) Drain Current vs. P IN vs. Temp Freq. = 4 GHz C 25 C 85 C 2 V D = 28 V, I DQ = 65 ma Gate Current (ma) Gate Current vs. P IN vs. Temp Freq. = 4 GHz V D = 28 V, I DQ = 65 ma -4 C 25 C 85 C P OUT vs. Frequency vs. V D Temp. = +85 C P IN = dbm Vd=V Vd=25V Vd=28V I DQ = 65 ma PAE vs. Frequency vs. V D P IN = dbm Vd=V Vd=25V Vd=28V Temp. = +85 C I DQ = 65 ma Data Sheet Rev. C, March 1, of 2 -
10 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Linearity IM3 (dbc) IM3 vs. Output Power vs. V D I DQ = 65 ma, 1 GHz, 1 MHz Tone Spacing Vd=V Vd=25V Vd=28V IM5 (dbc) IM5 vs. Output Power vs. V D I DQ = 65 ma, 1 GHz, 1 MHz Tone Spacing Vd=V Vd=25V Vd=28V IM3 (dbc) IM3 vs. Output Power vs. V D I DQ = 65 ma, 5 GHz, 1 MHz Tone Spacing Vd=V Vd=25V Vd=28V IM5 (dbc) IM5 vs. Output Power vs. V D I DQ = 65 ma, 5 GHz, 1 MHz Tone Spacing Vd=V Vd=25V Vd=28V IM3 (dbc) IM3 vs. Output Power vs. I DQ V D = 28 V, 1 GHz, 1 MHz Tone Spacing Idq=4mA Idq=65mA IM5 (dbc) IM5 vs. Output Power vs. I DQ V D = 28 V, 1 GHz, 1 MHz Tone Spacing Idq=4mA Idq=65mA Data Sheet Rev. C, March 1, of 2 -
11 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Linearity IM3 (dbc) IM3 vs. Output Power vs. I DQ V D = 28 V, 5 GHz, 1 MHz Tone Spacing Idq=4mA Idq=65mA IM5 (dbc) IM5 vs. Output Power vs. I DQ V D = 28 V, 5 GHz, 1 MHz Tone Spacing Idq=4mA Idq=65mA IM3 (dbc) IM3 vs. Output Power vs. Frequency V D = 28 V, I DQ = 65 ma, 1 MHz Tone Spacing 1GHz 2GHz 5GHz 8GHz IM5 (dbc) IM5 vs. Output Power vs. Frequency V D = 28 V, I DQ = 65 ma, 1 MHz Tone Spacing 1GHz 2GHz 5GHz 8GHz IM3 (dbc) IM3 vs. Output Power vs. Temp V D = 28 V, I DQ = 65 ma, 5. GHz, 1 MHz Tone Spacing -4 C +25 C +85 C IM5 (dbc) IM5 vs. Output Power vs. Temp V D = 28 V, I DQ = 65 ma, 5. GHz, 1 MHz Tone Spacing -4 C +25 C +85 C Data Sheet Rev. C, March 1, of 2 -
12 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Linearity 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 1 GHz I DQ = 65 ma V 25V 28V Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 1 GHz I DQ = 65 ma V 25V 28V Output f (dbm) 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 5 GHz I DQ = 65 ma V 25V 28V Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 5 GHz I DQ = 65 ma V 25V 28V Output f (dbm) 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. Freq Temp. = 25 C V D = 28 V, I DQ = 65 ma GHz 2GHz 5GHz 8GHz Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. Freq Temp. = 25 C V D = 28 V, I DQ = 65 ma GHz 2GHz 5GHz 8GHz Output f (dbm) Data Sheet Rev. C, March 1, of 2 -
13 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Linearity 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. Temp Freq. = 1 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. Temp Freq. = 1 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. Temp Freq. = 5 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. Temp Freq. = 5 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. Temp Freq. = 8 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. Temp Freq. = 8 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) Data Sheet Rev. C, March 1, of 2 -
14 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Small Signal Gain vs. Frequency vs. V D I DQ = 65 ma Gain vs. Frequency vs. I DQ V D = 28 V S21 (db) 3 28 S21 (db) 3 28 V 25V 28V ma 65 ma Gain vs. Frequency vs. Temperature V D = 28 V, I DQ = 65 ma S21 (db) C +25C +85C S11 (db) Input Return Loss vs. Freq. vs. Temp V D = 28 V, I DQ = 65 ma -4C +25C +85C S (db) Output Return Loss vs. Freq. vs. Temp V D = 28 V, I DQ = 65 ma C +25C +85C Data Sheet Rev. C, March 1, of 2 -
15 QPA13P 1 8 GHz 1 W GaN Power Amplifier Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) 5.44 C/W TBASE = 85 C, VD = +28 V () Channel Temperature (TCH) (Quiescent) 184 C At IDQ = 65 ma, PDISS = 18.2 W Median Lifetime (TM) 2.6E+8 Hrs Thermal Resistance (θjc) (1) TBASE = 85 C, VD = +25 V () 6. C/W Channel Temperature (TCH) (Under RF drive) At Freq = 6. GHz, PIN = dbm: IDQ = 65 ma, ID_Drive = 1.2 A 1 C Median Lifetime (TM) POUT = 39 dbm, PDISS = 21 W 1.E+7 Hrs Thermal Resistance (θjc) (1) TBASE = 85 C, VD = +28 V () 6.56 C/W Channel Temperature (TCH) (Under RF drive) At Freq = 6. GHz, PIN = dbm: IDQ = 65 ma, ID_Drive = 1.2 A 9 C Median Lifetime (TM) POUT = 39 dbm, PDISS = 25 W 1.2E+6 Hrs Notes: 1. Thermal resistance measured to back of package. Median Lifetime Test Conditions: VD = +28 V; Failure Criteria = 1 % reduction in ID_MAX during DC Life Testing Median Lifetime, T M (Hours) 1E+ 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 1E+5 FET16 (QGaN) Median Lifetime vs. T CH 1E Channel Temperature, T CH ( C) P DISS (W) P DISS vs. Frequency vs. V D Temp. = +85 C P IN = dbm Vd=V Vd=25V Vd=28V I DQ = 65 ma θ JC (C/W) Thermal Resistance vs. P DISS T BASE = +85 C 5.2 V D = 28 V, I DQ = 65 ma P DISS (W) Data Sheet Rev. C, March 1, of 2 -
16 QPA13P 1 8 GHz 1 W GaN Power Amplifier Applications Circuit and Pin Layout VG VD C1 R1 R3 C3 C2 R2 R4 C RF In RF Out Bias Up Procedure 1. Set ID limit to 1.3 A, IG limit to 1 ma 2. Apply 5 V to VG 3. Apply +28 V to VD; ensure IDQ is approx. ma 4. Adjust VG until IDQ = 65 ma (VG ~ 2.2 V Typ.). 5. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to 5 V; ensure IDQ is approx. ma 3. Set VD to V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pin No. Symbol Description 1, 3, 4, 6, 7, 9,, 17, 18, 2, 21, 23 GND Must be grounded on the PCB. 2 RF IN RF Input; matched to 5 Ω, DC blocked 5, 8, 1-14, 16, 19, -28 NC No internal connection. Should be connected to PCB ground. RF OUT RF Output; matched to 5 Ω, DC blocked, 27 VD Drain voltage, bias network is required; see Application Circuit as an example. 28 VG Gate voltage, bias network is required; see Application Circuit as an example. 29 GND Center pad ground connection. Data Sheet Rev. C, March 1, of 2 -
17 QPA13P 1 8 GHz 1 W GaN Power Amplifier Evaluation Board (EVB) Layout Assembly Notes: 1. PCB is 4 metal layers, each.5 oz. copper. Core 1 Taconics TSM-DS,.1 in. thick Core 2 Epoxy coated glass fabric Core 3 37HR,.6 in. thick 2. Center of PCB mounting area is a copper coin for thermal management and RF grounding. Bill of Materials Reference Des. Value Description Manuf. Part Number C1, C3 1 uf Cap, 125, 5 V, 2 %, X7R Various C2, C4 1 pf Cap, 42, 5 V, 1 %, X7R Various R1, R2, R3, R4 5.1 Ohm Res, 42, 5 V, 5 % Various Data Sheet Rev. C, March 1, of 2 -
18 QPA13P 1 8 GHz 1 W GaN Power Amplifier Mechanical Information Units: Millimeter (mm) Tolerances: unless specified x.xx = ±.25 x.xxx = ±.1 Materials: Base: EHS Laminate Lid: Laminate All metalized features are gold plated Part is epoxy sealed Marking: 13P: Part number YY: Part Assembly year WW: Part Assembly week MXXX: Batch ID Data Sheet Rev. C, March 1, of 2 -
19 QPA13P 1 8 GHz 1 W GaN Power Amplifier Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current Forward Gate Current (IG) Power Dissipation (PDISS), 85 C, Input Power,, 5 Ω, (PIN), VD = +28 V, IDQ = 65 ma, 85 C, Value / Range V -8 to V 13 ma See IG_MAX plot 3 W 18 dbm Input Power,, VSWR 3:1, (PIN) VD = +28 V, IDQ = 65 ma, 85 C 18 dbm Channel Temperature (TCH) 275 C Mounting Temperature (3 Seconds) C Storage Temperature -55 to C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Maximum Gate Current (ma) I G_MAX vs. T CH Channel Temperature ( C) Recommended Soldering Temperature Profile Data Sheet Rev. C, March 1, of 2 -
20 QPA13P 1 8 GHz 1 W GaN Power Amplifier Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) TBD ESDA / JEDEC JS MSL Moisture Sensitivity Level TBD IPC/JEDEC J-STD-2 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free ( C max. reflow temp.) and tin/lead (5 C max. reflow temp.) soldering processes. Solder profiles available upon request. RoHS Compliance This product is compliant with the 211/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2/863/EU. This product also has the following attributes: Lead Free Antimony Free TBBP-A (CH12Br42) Free PFOS Free SVHC Free Qorvo Green Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: Web: info-sales@qorvo.com For technical questions and application information: Important Notice info-products@qorvo.com The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 216 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. C, March 1, of 2 -
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Product Description The TGL2767 SM is a packaged wideband voltagevariable attenuator using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from 2 31 GHz, the TGL2767 SM offers > 2 db of
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TGA54-SM Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range:
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QPA8 Product Description Qorvo's QPA8 is an S-band two stage variable gain driver amplifier in a 5x5 mm QFN. The QPA8 operates from 2.7 to 3.8 GHz and provides 31dBm of P1dB output power with 26 db of
More informationTGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
More informationQPA1019S GHz 10W GaN Power Amplifier
QPA119 4.5 7. GHz 1 W GaN Power Amplifier Product Overview Qorvo s QPA119 is a packaged high-power, C-band amplifier fabricated on Qorvo s production.15 um GaN on SiC process (QGaN15). Covering 4.5 7.
More informationQPC GHz 6-Bit Digital Phase Shifter
Product Description The Qorvo is a packaged 6-bit digital phase shifter fabricated on Qorvo s high performance.15 um GaAs phemt process. It operates over 2.5-4 GHz while providing 36 of phase coverage
More informationQPC GHz Phase Shifter with Integrated SPDT
QPC1 Product Description Qorvo s QPC1 integrates a 5-bit digital phase shifter and a SPDT switch inside a small 6x5mm surface mount package. Individually, the Qorvo products include the TGP21 phase shifter
More informationTGA2710-SM 8W GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9.5-11.5 GHz Saturated Output Power: 39 dbm Small
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QPF41 26 3 GHz 1W GaN Front End Module Product Description The QPF41 is a multi-function Gallium Nitride MMIC front - end module targeted for 28 GHz phased array G base stations and terminals. Fabricated
More informationQPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information. Part No.
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
More informationTGA2704-SM 8W 9-11 GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9 - Saturated Output Power: 39 dbm Small Signal
More informationQPM GHz Multi-Chip T/R Module
QPM21 Product Description The QPM21 is a GaAs multi chip module (MCM) designed for S-Band radar applications within the 2.5-4. GHz range. The device consists of a T/R switch, a transmit path which is a
More informationTGA4533-SM K-Band Power Amplifier
Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
More informationQPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
More informationQPD0020S2. 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a 35 W unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and
More informationApplications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier
Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return
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2.5 to 6GHz 4W GaN Power Amplifier Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Frequency Range: 2.5 to 6 GHz P SAT : 46.5 dbm @ PIN = 26dBm, CW PAE:
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Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
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Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio General Purpose Product Features Functional Block Diagram Frequency Range:.1-15 GHz 6-Bit Digital
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Product Overview The is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor. can deliver PSAT of 16.6 W at +48
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Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final
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QPD19 Product Overview The QPD19 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.9 to 3.3 GHz on a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in
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General Description The Qorvo is a 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint s proven TQGaN25 process, which features advanced field
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Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
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Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1
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Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
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TGA279-2-FL Applications Ku-band Communications Product Features Frequency Range: 14.0 1. GHz P SAT : 43 dbm PAE: 27% Small Signal Gain: db Integrated Voltage Detector Bias: V D = 2 V, I DQ = 1.0 A, V
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Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital Phase Shifter
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Product Description The TriQuint TGA4852 is a medium power wideband AGC MMIC. Drain bias may be applied through the output port for best efficiency or through the on-chip drain termination. RF ports are
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General Description The Qorvo is a W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic
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Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio Instrumentation General Purpose Product Features Functional Block Diagram Frequency Range: 2
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Applications W-CDMA / LTE Macrocell Base Station, Band 1 and Band 3 Active Antenna General Purpose Applications 2 Lead NI400 Package Product Features Functional Block Diagram Operating Frequency Range:
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Product Overview The Qorvo is a 107 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device features advanced field plate techniques to optimize power and efficiency at high drain
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TGP217-SM Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital
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Product Overview The Qorvo is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input prematch within the package results in ease of external board match and saves board space.
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Product Overview The is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvo s E-pHEMT process, this amplifier delivers exceptional performance
More informationTQP MHz Power Amplifier. General Description. Product Features. Functional Block Diagram. Ordering Information
General Description The is a high-efficiency two-stage power amplifier in a low-cost surface-mount package. The amplifier is able to achieve 31% power added efficiency at +27 dbm output power while operating
More informationQPD W, 50V, GHz, GaN RF IMFET
Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an
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Product Overview The Qorvo QPD11 is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance,
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Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 1 GHz 3 dbm Nominal P3dB at 6 GHz 62.5% Maximum 1.4 db Linear at 6 GHz Bias: VD = - V,
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QPD1025 Product Overview The Qorvo QPD1025 is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre-match within the package results in ease of external board match and
More informationT1G Q3 DC 6 GHz 18 W GaN RF Power Transistor
Applications General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features Frequency: DC to 6 GHz
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General Description The Qorvo QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo s proven QGaN25HV process, which features advanced
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Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - GHz 41.2 dbm Nominal PSAT at 6 GHz 63.4% Maximum at 6 GHz db Linear at 6 GHz Bias: VD
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General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
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General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
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Product Description The QPA3503 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 3 W RMS at the device output covering frequency range from 3.4 to 3.6 GHz. The
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TGA Product Description The TriQuint TGA is an optical modulator linear driver amplifier designed for the CFPx 1 Gb/s optical markets. The TGA has 12 db of gain and 1. Vpp output power and High BW of 5
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Applications Point-to-Point Radio Communication Product Features Functional Block Diagram Frequency Range: 17.5 20 GHz Power: 32.5 dbm Psat, 31.5 dbm P1dB Gain: 23 db TOI: 43 dbm @ 22 dbm SCL Return Loss:
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Applications General Purpose QFN 8x8mm 28L Product Features Frequency Range: 2 12 GHz Power: 23 dbm P SAT Gain: 34 db Output TOI: 29 dbm Noise Figure: 3 db Bias: V D = 5 V, I D = 0 ma, V G1 = -0.7 V, V
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Product Description The QPA2705 is an integrated 2-stage Power Amplifier Module designed for Metro Cell Base Station applications with 5 W RMS at the device output. The module is 50 Ω input and output
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QPL965 Product Description The QPL965 is a high-linearity, ultra-low noise 2-stage gain block amplifier module with a bypass mode functionality integrated to the second stage in the product. At 1.95 GHz,
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Product Overview The is a single-pole double-throw (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the
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General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 14.7 db gain, + dbm OIP3, and 1.8 db Noise
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Product Overview The is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications up to 3 W RMS at the device output covering frequency range from 4.4 to 5.0 GHz. The module is
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Product Overview The is an HBT single ended RF amplifier IC operating as return path amplifier capable of supporting DOCSIS 3.1 applications. This IC is designed to provide a low noise, high gain option
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Product Overview The Qorvo is a highly integrated front-end module targeted for TDD macro or picocell base stations. The switch module integrates RF functional blocks such as a pin-diode based high power
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Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to GHz and 32 V supply. The device is in an industry standard overmolded package and is ideally suited
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TGA496-SM Applications Ka-Band Sat-Com VSAT 496 12 M34 QFN x mm 32L Product Features Functional Block Diagram Frequency Range: 28 31 GHz Power: 36 dbm Psat Gain: db Bias: Vd = 6 V, Idq = 1.6 A, Vg = -.7
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Product Overview The is a low-cost RF amplifier designed for applications from 47 to 1218 MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers
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