QPA1003P 1 8 GHz 10 W GaN Power Amplifier

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1 QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from 1 8 GHz and typically provides 1 W saturated output power with power-added efficiency of 3% and large-signal gain of 25 db. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA13P is matched to 5Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands. Lead-free and RoHS compliant. Evaluation boards are available upon request. Product Features Frequency Range: 1 8 GHz POUT: 4 PIN = dbm PAE: 3 PIN = dbm Large Signal Gain: 25 PIN = dbm Small Signal Gain: 3 db Bias: VD = +28 V, IDQ = 65 ma, VG = 2.2 V Typical Package Dimensions: 5. x 6. x 1.76 mm Process Technology: QGaN Functional Block Diagram RF In 23 RF Out Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Electronic Warfare (EW) Radar Communications Test Instrumentation Ordering Information Part No. ECCN Description QPA13P 3A1.b.2.b GHz 1 W GaN Power Amplifier Data Sheet Rev. C, March 1, of 2 -

2 QPA13P 1 8 GHz 1 W GaN Power Amplifier Electrical Specifications Test conditions unless otherwise noted: 25 C, VD = +28 V, IDQ = 65 ma, VG = 2.2 V Typical,. Parameter Min Typ Max Units Operational Frequency Range 1 8 GHz Output PIN = dbm Power Added PIN = dbm Small Signal Gain Input Return Loss Output Return Loss Frequency = 1 GHz 39.7 Frequency = 4 GHz 4.7 dbm Frequency = 8 GHz 39.9 Frequency = 1 GHz 47.5 Frequency = 4 GHz Frequency = 8 GHz 3.5 Frequency = 1 GHz 31.5 Frequency = 4 GHz.7 Frequency = 8 GHz 31.4 Frequency = 1 GHz 12.7 Frequency = 4 GHz 12.1 Frequency = 8 GHz 9.8 Frequency = 1 GHz 17.5 Frequency = 4 GHz 6.9 Frequency = 8 GHz 11.4 Small Signal Gain Temperature Coefficient -.4 db/ C Output Power Temperature Coefficient -.14 dbm/ C % db db db Recommended Operating Conditions Parameter Value / Range Drain Voltage (VD) +28 V Drain Current (IDQ) 65 ma Gate Voltage (VG) 2.2 V (Typ.) Temperature (TBASE) 4 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Data Sheet Rev. C, March 1, of 2 -

3 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () P OUT vs. Frequency vs. V D I DQ = 65 ma Vd=V Vd=25V Vd=28V P IN = dbm PAE vs. Frequency vs. V D I DQ = 65 ma Vd=V Vd=25V Vd=28V P IN = dbm Drain Current (ma) Drain Current vs. Frequency vs. V D I DQ = 65 ma Vd=V Vd=25V Vd=28V P IN = dbm Gate Current (ma) Gate Current vs. Frequency vs. V D P IN = dbm I DQ = 65 ma Vd=V Vd=25V Vd=28V P OUT vs. Frequency vs. I DQ P IN = dbm Idq=4mA Idq=65mA V D = 28 V PAE vs. Frequency vs. I DQ P IN = dbm V D = 28 V Idq=4mA Idq=65mA Data Sheet Rev. C, March 1, of 2 -

4 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () Drain Current (ma) Drain Current vs. Frequency vs. I DQ V D = 28 V P IN = dbm Idq=4mA Idq=65mA Gate Current (ma) Gate Current vs. Frequency vs. I DQ P IN = dbm V D = 28 V Idq=4mA Idq=65mA P OUT vs. Frequency vs. P IN V D = 28 V, I DQ = 65 ma Pin=5dBm Pin=1dBm Pin=13dBm Pin=dBm Pin=16dBm Pin=17dBm PAE vs. Frequency vs. P IN V D = 28 V, I DQ = 65 ma Pin=5dBm Pin=1dBm Pin=13dBm Pin=dBm Pin=16dBm Pin=17dBm Drain Current (ma) Drain Current vs. Frequency vs. P IN V D = 28 V, I DQ = 65 ma Pin=5dBm Pin=1dBm Pin=13dBm Pin=dBm Pin=16dBm Pin=17dBm Gate Current (ma) Gate Current vs. Frequency vs. P IN V D = 28 V, I DQ = 65 ma Pin=5dBm Pin=13dBm Pin=16dBm Pin=1dBm Pin=dBm Pin=17dBm Data Sheet Rev. C, March 1, of 2 -

5 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () P OUT vs. Frequency vs. Temp P IN = dbm V D = 28 V, I DQ = 65 ma -4 C 25 C 85 C PAE vs. Frequency vs. Temp V D = 28 V, I DQ = 65 ma P IN = dbm -4 C 25 C 85 C Drain Current (ma) Drain Current vs. Frequency vs. Temp P IN = dbm -4 C 25 C 85 C V D = 28 V, I DQ = 65 ma Gate Current (ma) Gate Current vs. Frequency vs. Temp P IN = dbm V D = 28 V, I DQ = 65 ma -4 C 25 C 85 C P OUT vs. P IN vs. Freq GHz 2GHz 4GHz 6GHz 8GHz V D = 28 V, I DQ = 65 ma PAE vs. P IN vs. Freq V D = 28 V, I DQ = 65 ma GHz 2GHz 4GHz 6GHz 8GHz Data Sheet Rev. C, March 1, of 2 -

6 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () Drain Current (ma) Drain Current vs. P IN vs. Freq V D = 28 V, I DQ = 65 ma GHz 2GHz 4GHz 6GHz 8GHz Gate Current (ma) Gate Current vs. P IN vs. Freq V D = 28 V, I DQ = 65 ma 1GHz 2GHz 4GHz 6GHz 8GHz P OUT vs. P IN vs. Freq GHz 2GHz 4GHz 6GHz 8GHz V D = 28 V, I DQ = 4 ma PAE vs. P IN vs. Freq V D = 28 V, I DQ = 4 ma GHz 2GHz 4GHz 6GHz 8GHz Drain Current (ma) Drain Current vs. P IN vs. Freq V D = 28 V, I DQ = 4 ma GHz 2GHz 4GHz 6GHz 8GHz Gate Current (ma) Gate Current vs. P IN vs. Freq V D = 28 V, I DQ = 4 ma 1GHz 2GHz 4GHz 6GHz 8GHz Data Sheet Rev. C, March 1, of 2 -

7 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () P OUT vs. P IN vs. V D Freq. = 4 GHz V 25V 28V 2 I DQ = 65 ma PAE vs. P IN vs. V D Freq. = 4 GHz V 25V 28V 5 I DQ = 65 ma Drain Current (ma) Drain Current vs. P IN vs. V D Freq. = 4 GHz V 25V 28V 2 I DQ = 65 ma Gate Current (ma) Gate Current vs. P IN vs. V D Freq. = 4 GHz I DQ = 65 ma V 25V 28V P OUT vs. P IN vs. I DQ Freq. = 4 GHz mA 65mA 2 V D = 28 V PAE vs. P IN vs. I DQ Freq. = 4 GHz 4mA 65mA 5 V D = 28 V Data Sheet Rev. C, March 1, of 2 -

8 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () Drain Current (ma) Drain Current vs. P IN vs. I DQ Freq. = 4 GHz mA 65mA V D = 28 V Gate Current (ma) Gate Current vs. P IN vs. I DQ Freq. = 4 GHz V D = 28 V 4mA 65mA P OUT vs. P IN vs. Temperature Freq. = 1 GHz C 25 C 85 C V D = 28 V, I DQ = 65 ma PAE vs. P IN vs. Temperature Freq. = 1 GHz -4 C 25 C 85 C V D = 28 V, I DQ = 65 ma Drain Current (ma) 1 Drain Current vs. P IN vs. Temp Freq. = 1 GHz C 25 C 85 C 2 V D = 28 V, I DQ = 65 ma Gate Current (ma) Gate Current vs. P IN vs. Temp 2 18 Freq. = 1 GHz V D = 28 V, I DQ = 65 ma C 25 C 85 C Data Sheet Rev. C, March 1, of 2 -

9 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Large Signal () P OUT vs. P IN vs. Temperature Freq. = 4 GHz C 25 C 85 C V D = 28 V, I DQ = 65 ma PAE vs. P IN vs. Temperature Freq. = 4 GHz -4 C 25 C 85 C 5 V D = 28 V, I DQ = 65 ma Drain Current (ma) Drain Current vs. P IN vs. Temp Freq. = 4 GHz C 25 C 85 C 2 V D = 28 V, I DQ = 65 ma Gate Current (ma) Gate Current vs. P IN vs. Temp Freq. = 4 GHz V D = 28 V, I DQ = 65 ma -4 C 25 C 85 C P OUT vs. Frequency vs. V D Temp. = +85 C P IN = dbm Vd=V Vd=25V Vd=28V I DQ = 65 ma PAE vs. Frequency vs. V D P IN = dbm Vd=V Vd=25V Vd=28V Temp. = +85 C I DQ = 65 ma Data Sheet Rev. C, March 1, of 2 -

10 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Linearity IM3 (dbc) IM3 vs. Output Power vs. V D I DQ = 65 ma, 1 GHz, 1 MHz Tone Spacing Vd=V Vd=25V Vd=28V IM5 (dbc) IM5 vs. Output Power vs. V D I DQ = 65 ma, 1 GHz, 1 MHz Tone Spacing Vd=V Vd=25V Vd=28V IM3 (dbc) IM3 vs. Output Power vs. V D I DQ = 65 ma, 5 GHz, 1 MHz Tone Spacing Vd=V Vd=25V Vd=28V IM5 (dbc) IM5 vs. Output Power vs. V D I DQ = 65 ma, 5 GHz, 1 MHz Tone Spacing Vd=V Vd=25V Vd=28V IM3 (dbc) IM3 vs. Output Power vs. I DQ V D = 28 V, 1 GHz, 1 MHz Tone Spacing Idq=4mA Idq=65mA IM5 (dbc) IM5 vs. Output Power vs. I DQ V D = 28 V, 1 GHz, 1 MHz Tone Spacing Idq=4mA Idq=65mA Data Sheet Rev. C, March 1, of 2 -

11 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Linearity IM3 (dbc) IM3 vs. Output Power vs. I DQ V D = 28 V, 5 GHz, 1 MHz Tone Spacing Idq=4mA Idq=65mA IM5 (dbc) IM5 vs. Output Power vs. I DQ V D = 28 V, 5 GHz, 1 MHz Tone Spacing Idq=4mA Idq=65mA IM3 (dbc) IM3 vs. Output Power vs. Frequency V D = 28 V, I DQ = 65 ma, 1 MHz Tone Spacing 1GHz 2GHz 5GHz 8GHz IM5 (dbc) IM5 vs. Output Power vs. Frequency V D = 28 V, I DQ = 65 ma, 1 MHz Tone Spacing 1GHz 2GHz 5GHz 8GHz IM3 (dbc) IM3 vs. Output Power vs. Temp V D = 28 V, I DQ = 65 ma, 5. GHz, 1 MHz Tone Spacing -4 C +25 C +85 C IM5 (dbc) IM5 vs. Output Power vs. Temp V D = 28 V, I DQ = 65 ma, 5. GHz, 1 MHz Tone Spacing -4 C +25 C +85 C Data Sheet Rev. C, March 1, of 2 -

12 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Linearity 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 1 GHz I DQ = 65 ma V 25V 28V Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 1 GHz I DQ = 65 ma V 25V 28V Output f (dbm) 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 5 GHz I DQ = 65 ma V 25V 28V Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 5 GHz I DQ = 65 ma V 25V 28V Output f (dbm) 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. Freq Temp. = 25 C V D = 28 V, I DQ = 65 ma GHz 2GHz 5GHz 8GHz Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. Freq Temp. = 25 C V D = 28 V, I DQ = 65 ma GHz 2GHz 5GHz 8GHz Output f (dbm) Data Sheet Rev. C, March 1, of 2 -

13 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Linearity 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. Temp Freq. = 1 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. Temp Freq. = 1 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. Temp Freq. = 5 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. Temp Freq. = 5 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 2 ND Harmonic (dbc) 2 ND Harmonic vs. Output Power vs. Temp Freq. = 8 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) 3 RD Harmonic (dbc) 3 RD Harmonic vs. Output Power vs. Temp Freq. = 8 GHz V D = 28 V, I DQ = 65 ma C +25C +85C Output f (dbm) Data Sheet Rev. C, March 1, of 2 -

14 QPA13P 1 8 GHz 1 W GaN Power Amplifier Performance Plots Small Signal Gain vs. Frequency vs. V D I DQ = 65 ma Gain vs. Frequency vs. I DQ V D = 28 V S21 (db) 3 28 S21 (db) 3 28 V 25V 28V ma 65 ma Gain vs. Frequency vs. Temperature V D = 28 V, I DQ = 65 ma S21 (db) C +25C +85C S11 (db) Input Return Loss vs. Freq. vs. Temp V D = 28 V, I DQ = 65 ma -4C +25C +85C S (db) Output Return Loss vs. Freq. vs. Temp V D = 28 V, I DQ = 65 ma C +25C +85C Data Sheet Rev. C, March 1, of 2 -

15 QPA13P 1 8 GHz 1 W GaN Power Amplifier Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) 5.44 C/W TBASE = 85 C, VD = +28 V () Channel Temperature (TCH) (Quiescent) 184 C At IDQ = 65 ma, PDISS = 18.2 W Median Lifetime (TM) 2.6E+8 Hrs Thermal Resistance (θjc) (1) TBASE = 85 C, VD = +25 V () 6. C/W Channel Temperature (TCH) (Under RF drive) At Freq = 6. GHz, PIN = dbm: IDQ = 65 ma, ID_Drive = 1.2 A 1 C Median Lifetime (TM) POUT = 39 dbm, PDISS = 21 W 1.E+7 Hrs Thermal Resistance (θjc) (1) TBASE = 85 C, VD = +28 V () 6.56 C/W Channel Temperature (TCH) (Under RF drive) At Freq = 6. GHz, PIN = dbm: IDQ = 65 ma, ID_Drive = 1.2 A 9 C Median Lifetime (TM) POUT = 39 dbm, PDISS = 25 W 1.2E+6 Hrs Notes: 1. Thermal resistance measured to back of package. Median Lifetime Test Conditions: VD = +28 V; Failure Criteria = 1 % reduction in ID_MAX during DC Life Testing Median Lifetime, T M (Hours) 1E+ 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 1E+5 FET16 (QGaN) Median Lifetime vs. T CH 1E Channel Temperature, T CH ( C) P DISS (W) P DISS vs. Frequency vs. V D Temp. = +85 C P IN = dbm Vd=V Vd=25V Vd=28V I DQ = 65 ma θ JC (C/W) Thermal Resistance vs. P DISS T BASE = +85 C 5.2 V D = 28 V, I DQ = 65 ma P DISS (W) Data Sheet Rev. C, March 1, of 2 -

16 QPA13P 1 8 GHz 1 W GaN Power Amplifier Applications Circuit and Pin Layout VG VD C1 R1 R3 C3 C2 R2 R4 C RF In RF Out Bias Up Procedure 1. Set ID limit to 1.3 A, IG limit to 1 ma 2. Apply 5 V to VG 3. Apply +28 V to VD; ensure IDQ is approx. ma 4. Adjust VG until IDQ = 65 ma (VG ~ 2.2 V Typ.). 5. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to 5 V; ensure IDQ is approx. ma 3. Set VD to V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pin No. Symbol Description 1, 3, 4, 6, 7, 9,, 17, 18, 2, 21, 23 GND Must be grounded on the PCB. 2 RF IN RF Input; matched to 5 Ω, DC blocked 5, 8, 1-14, 16, 19, -28 NC No internal connection. Should be connected to PCB ground. RF OUT RF Output; matched to 5 Ω, DC blocked, 27 VD Drain voltage, bias network is required; see Application Circuit as an example. 28 VG Gate voltage, bias network is required; see Application Circuit as an example. 29 GND Center pad ground connection. Data Sheet Rev. C, March 1, of 2 -

17 QPA13P 1 8 GHz 1 W GaN Power Amplifier Evaluation Board (EVB) Layout Assembly Notes: 1. PCB is 4 metal layers, each.5 oz. copper. Core 1 Taconics TSM-DS,.1 in. thick Core 2 Epoxy coated glass fabric Core 3 37HR,.6 in. thick 2. Center of PCB mounting area is a copper coin for thermal management and RF grounding. Bill of Materials Reference Des. Value Description Manuf. Part Number C1, C3 1 uf Cap, 125, 5 V, 2 %, X7R Various C2, C4 1 pf Cap, 42, 5 V, 1 %, X7R Various R1, R2, R3, R4 5.1 Ohm Res, 42, 5 V, 5 % Various Data Sheet Rev. C, March 1, of 2 -

18 QPA13P 1 8 GHz 1 W GaN Power Amplifier Mechanical Information Units: Millimeter (mm) Tolerances: unless specified x.xx = ±.25 x.xxx = ±.1 Materials: Base: EHS Laminate Lid: Laminate All metalized features are gold plated Part is epoxy sealed Marking: 13P: Part number YY: Part Assembly year WW: Part Assembly week MXXX: Batch ID Data Sheet Rev. C, March 1, of 2 -

19 QPA13P 1 8 GHz 1 W GaN Power Amplifier Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current Forward Gate Current (IG) Power Dissipation (PDISS), 85 C, Input Power,, 5 Ω, (PIN), VD = +28 V, IDQ = 65 ma, 85 C, Value / Range V -8 to V 13 ma See IG_MAX plot 3 W 18 dbm Input Power,, VSWR 3:1, (PIN) VD = +28 V, IDQ = 65 ma, 85 C 18 dbm Channel Temperature (TCH) 275 C Mounting Temperature (3 Seconds) C Storage Temperature -55 to C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Maximum Gate Current (ma) I G_MAX vs. T CH Channel Temperature ( C) Recommended Soldering Temperature Profile Data Sheet Rev. C, March 1, of 2 -

20 QPA13P 1 8 GHz 1 W GaN Power Amplifier Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) TBD ESDA / JEDEC JS MSL Moisture Sensitivity Level TBD IPC/JEDEC J-STD-2 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free ( C max. reflow temp.) and tin/lead (5 C max. reflow temp.) soldering processes. Solder profiles available upon request. RoHS Compliance This product is compliant with the 211/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2/863/EU. This product also has the following attributes: Lead Free Antimony Free TBBP-A (CH12Br42) Free PFOS Free SVHC Free Qorvo Green Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: Web: info-sales@qorvo.com For technical questions and application information: Important Notice info-products@qorvo.com The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 216 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. C, March 1, of 2 -

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