TGA4548S2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information GHz 10 W GaN Power Amplifier

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1 17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and typically provides 1 W saturated output power with power-added efficiency of 3% and large-signal gain of 22 db. This combination of high frequency performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The also has an integrated power detector to support system diagnostics and other needs. The is matched to Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The frequency coverage and operational flexibility allows it support satellite communication as well as point to point data links. The is 1% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant. Evaluation boards are available upon request. Functional Block Diagram Key Features 2.9 x 2.8 x.1 mm Die Size Frequency Range: 17 2 GHz Power: 4 dbm Psat Small Signal Gain: 27 db Large Signal Gain: 22 db Integrated Power Detector PAE: 3% at PIN = 12 dbm Bias: VD1 = VD2 = VD3 = +, ID1 + ID2 + ID3 = 3 ma Chip Dimensions: 2.9 x 2.8 x.1 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Point-to-Point Radio Satellite Communications Ordering Information Part No. ECCN Description 3A1.b.2.c Waffle tray with pcs S2 Sample waffle tray with 2 pcs EVB Evaluation board Data Sheet Rev. A, November 18, 216 Subject to change without notice 1 of 11

2 Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) RF Input Power, CW, Ω, T= C Dissipated Power (PDISS), CW, 8 C Rating 29. V -8 to V 26 dbm 43 W Storage Temperature to +1 C Mounting Temperature (3 seconds) 32 C Channel Temperature (TCH) 27 C Drain Current (ID1), Top or Bottom Drain Current (ID2), Top or Bottom Drain Current (ID3), Top and Bottom Forward Gate Current (IG1), Top or Bottom Forward Gate Current (IG2), Top or Bottom Forward Gate Current (IG3), Top and Bottom Reference Power Detect (Iref) Power Detect Diode (Idet) ma ma 2 A 3 ma 12 ma 48 ma 4 ma 4 ma Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability GHz 1 W GaN Power Amplifier Recommended Operating Conditions Parameter Min Typ Max Units Drain Voltage (VD) + Operating Temp. Range C IDQ 3 ma VG -2.6 V ID drive (at +38dBm Pout) 93 ma Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Conditions (1) Min Typ Max Units Operational Frequency Range 17 2 GHz Small Signal Gain 27 db Input Return Loss 1 db Output Return Loss 12 db Output Power at Saturation, Psat 4 dbm Power Added Efficiency, PAE 3 % Third Order Intermodulation, IM3 Pout = +34 dbm/tone - dbc Gain Temperature Coefficient Tdiff = (8 (-4)) C -.61 db/ C Power Temperature Coefficient Tdiff = (8 (-4)) C, Pin = + dbm -.44 dbm/ C Notes: 1. Test conditions unless otherwise noted: VD1=VD2=VD3=28V, ID1+ID2=ID3=3mA, VG1=VG2=VG3=-2.6V typical, Temp = + C, Z = Ω Data Sheet Rev. A, November 18, 216 Subject to change without notice 2 of 11

3 Gain (db) Gain (db) Gain (db) Gain (db) 17 2 GHz 1 W GaN Power Amplifier Performance Plots Test conditions unless otherwise noted: VD1=VD2=VD3=28V, ID1+ID2+ID3=3mA, VG1=VG2=VG3=-2.6V typical, Temp = + C, Z = Ω S-parameter vs. Frequency S-parameter vs. Frequency Gain IRL ORL Gain -2 IRL ORL I D = 3mA Gain vs. Frequency vs. V D 3 3 I D = 6mA Gain vs. Frequency vs. V D Input Return Loss vs. Frequency vs. V D I D = 3mA - -1 Input Return Loss vs. Frequency vs. V D I D = 6mA Data Sheet Rev. A, November 18, 216 Subject to change without notice 3 of 11

4 Gain (db) 17 2 GHz 1 W GaN Power Amplifier Performance Plots Test conditions unless otherwise noted: VD1=VD2=VD3=28V, ID1+ID2+ID3=3mA, VG1=VG2=VG3=-2.6V typical, Temp = + C, Z = Ω Output Return Loss vs. Frequency vs. V D I D = 3mA Output Return Loss vs. Frequency vs. V D I D = 6mA C + C -4 C Gain vs. Frequency vs. Temp Input Return Loss vs. Frequency vs. Temp. +8 C + C -4 C Output Return Loss vs. Frequency vs. Temp C C -4 C Data Sheet Rev. A, November 18, 216 Subject to change without notice 4 of 11

5 PAE (%) Output Power (dbm), Gain (db) Current, Id (ma) PAE (%) Output Power (dbm), Gain (db) Current, Id (ma) Output Power (dbm) Output Power (dbm), Gain (db) Current, Id (ma) 17 2 GHz 1 W GaN Power Amplifier Performance Plots Test conditions unless otherwise noted: VD1=VD2=VD3=28V, ID1+ID2+ID3=3mA, VG1=VG2=VG3=-2.6V typical, Temp = + C, Z = Ω Psat vs. Vd vs. Frequency Pout, Gain, Id vs GHz Pout Gain Id Input Power (dbm) PAE vs. Vd vs. Frequency Pout, Gain, Id vs. 18. GHz Pout 18 4 Gain Id Input Power (dbm) PAE vs. Pin vs. Frequency 17.7 GHz 18. GHz 19.7 GHz Input Power (dbm) Pout, Gain, Id vs GHz Pout Gain Id Input Power (dbm) Data Sheet Rev. A, November 18, 216 Subject to change without notice of 11

6 Vdiff (V) = Vref - Vdet IM3 (dbc) IM (dbc) AM-AM (db) AM-PM (degrees) 17 2 GHz 1 W GaN Power Amplifier Performance Plots Test conditions unless otherwise noted: VD1=VD2=VD3=28V, ID1+ID2+ID3=3mA, VG1=VG2=VG3=-2.6V typical, Temp = + C, Z = Ω AM-AM vs. Pout vs. Frequency GHz GHz GHz Output Power (dbm) AM-PM vs. Pout vs. Frequency GHz GHz GHz Output Power (dbm) IM3 vs. Pout/Tone vs. Frequency 17.7GHz 18.GHz 19.7GHz Output Power (dbm/tone) IM vs. Pout/Tone vs. Frequency GHz 18.GHz GHz Output Power (dbm/tone).6..4 Power Detector vs. Pout vs. Frequency 17.7GHz 18.GHz 19.7GHz Output Power (dbm) Data Sheet Rev. A, November 18, 216 Subject to change without notice 6 of 11

7 Median Lifetime, T M (Hours) 17 2 GHz 1 W GaN Power Amplifier Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) CW 3.7 ºC/W Channel Temperature, TCH (Under RF) Tbaseplate = +8 C, VD = +, ID = 3 ma, 11 C POUT = dbm, Median Lifetime (TM) PDISS = 8.4 W.7 x 1 11 Hrs Thermal Resistance (θjc) (1) CW 4.17 ºC/W Channel Temperature, TCH (Under RF) Tbaseplate = +8 C, VD = +, ID = 17 ma, 24 C POUT = 4 dbm, Median Lifetime (TM) PDISS = 37.6 W 2.4 x 1 6 Hrs Notes: 1. Channel operating temperature will directly affect the device median lifetime (Tm). For maximum life, it is recommended that the channel temperatures be maintained at the lowest possible levels. Median Lifetime 1E+1 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 Test Conditions: VD = +; Failure Criteria is 1% reduction in ID_MAX Median Lifetime vs. T CH 1E+ FET16 1E Channel Temperature, T CH ( C) Data Sheet Rev. A, November 18, 216 Subject to change without notice 7 of 11

8 17 2 GHz 1 W GaN Power Amplifier Application Circuit Notes: 1. VG1, VG2, and VG3 can be biased from either side, and the non-biased side can be left open. VD1, VD2, and VD3 must be biased from both sides. Bias Up Procedure 1. Set ID limit to 3 ma, IG limit to 2 ma 2. Apply V to VG 3. Apply + to VD; ensure IDQ is approx. ma 4. Adjust VG until IDQ = 3 ma (VG ~ 2.3 V Typ.).. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to V; ensure IDQ is approx. ma 3. Set VD to V 4. Turn off VD supply. Turn off VG supply Data Sheet Rev. A, November 18, 216 Subject to change without notice 8 of 11

9 17 2 GHz 1 W GaN Power Amplifier Evaluation Board (EVB) Layout Assembly Note: PCB is a multilayer 1. All 4 metal thicknesses are. oz 2. Upper core 1 is Rogers 43C 3. Pre-Preg is an epoxy coated glass fabric Bill of Material Evaluation board Reference Des. Value Description Manuf. Part Number n/a n/a Printed Circuit Board Qorvo U1 n/a 17 2 GHz Power Amplifier Qorvo C1-C6 1pF Cap, 1pF various C7-C12.1uF Cap,.1uF various R1-R4 2kΩ Res 2K OHM 1/8W +/-1% 8 NON-ROHS various Data Sheet Rev. A, November 18, 216 Subject to change without notice 9 of 11

10 17 2 GHz 1 W GaN Power Amplifier Mechanical Information Notes: Units: millimeters Ground is backside of die Bond Pad Description Pad No. Symbol Pad Size (mm) Description 1 RF IN.1 x.2 RF Input; matched to Ω, DC blocked 3, 12 VG123.1 x.1 Gate voltage for stage 1, 2, & 3, bias network is required; see Application Circuit on page 8 as an example. 4, 11 VD1.1 x.1 Drain voltage for stage 1, bias network is required; see Application Circuit on page 8 as an example., 1 VD2.1 x.1 Drain voltage for stage 2, bias network is required; see Application Circuit on page 8 as an example. 6, 9 VD3.2 x.1 Drain voltage for stage 3, bias network is required; see Application Circuit on page 8 as an example. 7, 8 VDET, VREF.1 x.1 Power detector and reference voltage 2 RF OUT.1 x.2 RF Output; matched to Ω, DC blocked Data Sheet Rev. A, November 18, 216 Subject to change without notice 1 of 11

11 17 2 GHz 1 W GaN Power Amplifier Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1A ESDA / JEDEC JS Caution! ESD-Sensitive Device Solderability Compatible with lead-free (26 C max. reflow temp.) soldering process. Solder profiles available upon request. Use of no-clean solder to avoid washing after soldering is recommended. Contact plating: NiAu RoHS Compliance This part is compliant with 211/6/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 21/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C1H12Br42) Free PFOS Free SVHC Free Pb Contact Information Tape For the latest and specifications, Reel Information additional product information, Tape Length worldwide and sales and Label distribution Placement locations: Web: Tel: Notes: customer.support@qorvo.com 1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA A. 2. Labels are placed on the flange opposite the sprockets in the carrier tape. Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 216 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. A, November 18, 216 Subject to change without notice 11 of 11