TGF Watt Discrete Power GaN on SiC HEMT

Transcription

1 Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 1 GHz 3 dbm Nominal P3dB at 6 GHz 62.5% Maximum 1.4 db Linear at 6 GHz Bias: VD = - V, IDQ = 5 ma Technology: QGaN on SiC Chip Dimensions: 0.2 x 0.66 x 0. mm General Description The Qorvo TGF is a discrete 1. mm GaN on SiC HEMT which operates from DC-1 GHz. The TGF is designed using Qorvo s proven QGaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. Pad Configuration Pad No. Symbol 1 VG / RF IN 2 VD / RF OUT Backside Source / Ground The TGF typically provides 3 dbm of saturated output power with power gain of.4 db at 6 GHz. The maximum power added efficiency is 62.5 % which makes the TGF appropriate for high efficiency applications. Lead-free and RoHS compliant Ordering Information Part ECCN Description TGF EAR99 6 Watt GaN HEMT Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

2 Absolute Maximum Ratings Parameter Breakdown Voltage (BVDG) Value 0 V Gate Voltage Range (VG) to 0 V Drain Current (ID) 1. A Gate Current (IG) 1. to 3.5 ma Power Dissipation (PD) See graph on pg.5. CW Input Power (PIN) +31 dbm Channel Temperature (TCH) 275 C Mounting Temperature (30 Sec.) 3 C Storage Temperature 65 to 0 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions (1) Parameter Drain Voltage Range (VD) Drain Quiescent Current (IDQ) Drain Current Under RF Drive ( ID) Gate Voltage (VG) Channel Temperature (TCH) Dissipation Power. CW (PD) 3 Dissipation Power, Pulsed (PD) 2,3 Value V 62.5 ma 0 ma (Typ.) 3.0 V (Typ.) 2 C (Max.) 5.75 W 6. W 1. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 2. Pulse Width = 1.26 ms, Duty Cycle = % 3. Carrier Plate Temperature is at 5 C. Model RF Characterization Optimum Power Tune Test conditions unless otherwise noted: T = C. Parameter Typical Value Units Frequency (F) 3 6 GHz Drain Voltage (VD) V Bias Current (IDQ) ma Output P3dB (P3dB) P3dB (3dB) P3dB (G3dB) db Parallel Resistance (1) (Rp) Ω mm Parallel Capacitance (1) (Cp) pf/mm Load Reflection Coefficient (2) (ΓL) Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 50 Ω. Model RF Characterization Optimum Efficiency Tune Test conditions unless otherwise noted: T = C. Parameter Typical Value Units Frequency (F) 3 6 GHz Drain Voltage (VD) V Bias Current (IDQ) ma Output P3dB (P3dB) P3dB (3dB) P3dB (G3dB) db Parallel Resistance (1) (Rp) Ω mm Parallel Capacitance (1) (Cp) pf/mm Load Reflection Coefficient (2) (ΓL) Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 50 Ω. Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

3 Thermal and Reliability - CW (1) Parameter Test Conditions Value Units Thermal Resistance, θjc 19.2 C/W Channel Temperature, TCH PD = 1. W, Tbaseplate = 5 C 9 C Median Lifetime, TM 4.2E11 Hrs Thermal Resistance, θjc.4 C/W Channel Temperature, TCH PD = 2.50 W, Tbaseplate = 5 C 136 C Median Lifetime, TM 1.3E Hrs Thermal Resistance, θjc 21.6 C/W Channel Temperature, TCH PD = 3.75 W, Tbaseplate = 5 C 6 C Median Lifetime, TM 4.4E Hrs Thermal Resistance, θjc 23.2 C/W Channel Temperature, TCH PD = 5.0 W, Tbaseplate = 5 C 1 C Median Lifetime, TM 1.4E7 Hrs Thermal Resistance, θjc.0 C/W Channel Temperature, TCH PD = 6. W, Tbaseplate = 5 C 1 C Median Lifetime, TM 5.2E5 Hrs Notes: 1. Assumes eutectic attach using 1.5 mil thick 0/ AuSn mounted to a mm x mm x mil CuMo Carrier Plate. Thermal and Reliability - Pulsed (1) Parameter Test Conditions Value Units Thermal Resistance, θjc PD = 6. W, Tbaseplate = 5 C 17.4 C/W Channel Temperature, TCH Pulse Width = 0 us 194 C Median Lifetime, TM Duty Cycle = 5% 5.5E Hrs Thermal Resistance, θjc PD = 6. W, Tbaseplate = 5 C 17. C/W Channel Temperature, TCH Pulse Width = 0 us 196 C Median Lifetime, TM Duty Cycle = % 2.3E Hrs Thermal Resistance, θjc PD = 6. W, Tbaseplate = 5 C 1.4 C/W Channel Temperature, TCH Pulse Width = 0 us 0 C Median Lifetime, TM Duty Cycle = % 7.7E7 Hrs Thermal Resistance, θjc PD = 6. W, Tbaseplate = 5 C 21.3 C/W Channel Temperature, TCH Pulse Width = 0 us 21 C Median Lifetime, TM Duty Cycle = 50% 6.6E6 Hrs Notes: 1. Assumes eutectic attach using 1.5 mil thick 0/ AuSn mounted to a mm x mm x mil CuMo Carrier Plate. Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

4 Median Lifetime Median Lifetime, T M (Hours) Median Lifetime vs. Channel Temperature 1E+1 1E+17 1E+ 1E+ 1E+14 1E+13 1E+ 1E+11 1E+ 1E+09 1E+0 1E+07 1E+06 1E+05 1E Channel Temperature, T CH ( C) Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

5 Maximum Channel Temperature - CW Max Tch vs. Pdiss for Fixed 5 C on.0" CuMo Carrier Plate Carrier Plate held at 5C 1E6 Hours MTBF Operating Limit 2 Max Temperature, C CW Power Dissipation, W Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

6 Peak Channel Temperature - Pulsed 0 Peak Channel Temperature Tbase = 5 o C, Pdiss = 6. W Peak Channel Temperature ( o C) % Duty Cycle % Duty Cycle % Duty Cycle 50% Duty Cycle E E E E E E-01 Pulse Width (sec) Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

7 Maximum Performance 35 Maximum vs. Frequency V D = V, I DQ = ma Temp.=+ C 35 Maximum vs. Frequency V D = V, I DQ = 62.5 ma Temp.=+ C Maximum (db) Measured Modeled Maximum (db) Measured Modeled Frequency (GHz) Frequency (GHz) 35 Maximum vs. Frequency V D = 2 V, I DQ = ma Temp.=+ C 35 Maximum vs. Frequency V D = 2 V, I DQ = 62.5 ma Temp.=+ C Maximum (db) Measured Modeled Maximum (db) Measured Modeled Frequency (GHz) Frequency (GHz) Maximum (db) Maximum vs. Frequency V D = 2 V, I DQ = 5 ma Temp.=+ C Measured Modeled Frequency (GHz) Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

8 Model Load Pull Contours 3 GHz Simulated signal: % pulses Vd = 2 V, Idq = ma Zs(fo) = iΩ Zs(2fo) = Ω Zs(3fo) = Ω Zl(2fo) = 50Ω Zl(3fo) = 50Ω GHz, Load-pull Max Power is 3dBm at Z = iΩ Γ = i Max is 22.9dB at Z = iΩ Γ = i Max is 65.6% at Z = iΩ Γ = i Zo = 50Ω 3dB compression referenced to peak gain Power 4 Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

9 Model Load Pull Contours 6 GHz Simulated signal: % pulses Vd = 2 V, Idq = ma 6GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = Ω Zs(3fo) = Ω Zl(2fo) = 50Ω Zl(3fo) = 50Ω Max Power is 3.1dBm at Z = iΩ Γ = i Max is.6db at Z = iΩ Γ = i Max is 63.3% at Z = iΩ Γ = i Zo = 50Ω 3dB compression referenced to peak gain Power Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

10 Model Load Pull Contours GHz Simulated signal: % pulses Vd = 2 V, Idq = ma GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = Ω Zs(3fo) = Ω Zl(2fo) = 50Ω Zl(3fo) = 50Ω Max Power is 3.1dBm at Z = iΩ Γ = i Max is 13.dB at Z = iΩ Γ = i Max is 60.5% at Z = iΩ Γ = i Zo = 50Ω 3dB compression referenced to peak gain Power Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

11 Model Load Pull Contours Simulated signal: % pulses Vd = 2 V, Idq = ma GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = Ω Zs(3fo) = Ω Zl(2fo) = 50Ω Zl(3fo) = 50Ω Max Power is 3.1dBm at Z = iΩ Γ = i Max is.2db at Z = iΩ Γ = i Max is 57.3% at Z = iΩ Γ = i Zo = 50Ω 3dB compression referenced to peak gain Power Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

12 Model Load Pull Contours Simulated signal: % pulses Vd = 2 V, Idq = 62.5 ma Zs(fo) = iΩ Zs(2fo) = Ω Zs(3fo) = Ω Zl(2fo) = 50Ω Zl(3fo) = 50Ω 3GHz, Load-pull 23.6 Max Power is 37.dBm at Z = iΩ Γ = i Max is 23.7dB at Z = iΩ Γ = i Max is.3% at Z = iΩ Γ = i Zo = 50Ω 3dB compression referenced to peak gain Power 4 Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

13 Model Load Pull Contours Simulated signal: % pulses Vd = 2 V, Idq = 62.5 ma 6GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = Ω Zs(3fo) = Ω Zl(2fo) = 50Ω Zl(3fo) = 50Ω 1.6 Max Power is 3dBm at Z = iΩ Γ = i Max is 17.4dB at Z = iΩ Γ = i Max is 62.5% at Z = iΩ Γ = i Zo = 50Ω 3dB compression referenced to peak gain Power Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

14 Model Load Pull Contours Simulated signal: % pulses Vd = 2 V, Idq = 62.5 ma GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = Ω Zs(3fo) = Ω Zl(2fo) = 50Ω Zl(3fo) = 50Ω Max Power is 3dBm at Z = iΩ Γ = i Max is 14.7dB at Z = iΩ Γ = i Max is 60.1% at Z = iΩ Γ = i Zo = 50Ω 3dB compression referenced to peak gain Power Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

15 Model Load Pull Contours Simulated signal: % pulses Vd = 2 V, Idq = 62.5 ma GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = Ω Zs(3fo) = Ω Zl(2fo) = 50Ω Zl(3fo) = 50Ω Max Power is 3dBm at Z = iΩ Γ = i Max is 13.1dB at Z = iΩ Γ = i Max is 57.4% at Z = iΩ Γ = i Zo = 50Ω 3dB compression referenced to peak gain Power Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

16 Model Drive-up Data 3 GHz [db] TGF and vs. Output Power 3GHz, Vds =2V, Idq =ma, % Duty Cycle, Power Tuned 19 Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω 1 Zl-fo = iΩ [%] [db] TGF and vs. Output Power 3GHz, Vds =2V, Idq =ma, % Duty Cycle, Efficiency Tuned Zs-fo = iΩ 19 Zs-2fo = Ω Zs-3fo = Ω 1 Zl-fo = iΩ [%] [db] TGF and vs. Output Power 3GHz, Vds =2V, Idq =62.5mA, % Duty Cycle, Power Tuned Zs-fo = iΩ 19 Zs-2fo = Ω 1 Zs-3fo = Ω Zl-fo = iΩ [%] [db] TGF and vs. Output Power 3GHz, Vds =2V, Idq =62.5mA, % Duty Cycle, Efficiency Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω Zl-fo = iΩ [%] Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

17 Model Drive-up Data 6 GHz [db] TGF and vs. Output Power 6GHz, Vds =2V, Idq =ma, % Duty Cycle, Power Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω 13.6 Zl-fo = iΩ [%] [db] TGF and vs. Output Power 6GHz, Vds =2V, Idq =ma, % Duty Cycle, Efficiency Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω 13.6 Zl-fo = iΩ [%] [db] TGF and vs. Output Power 6GHz, Vds =2V, Idq =62.5mA, % Duty Cycle, Power Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω Zl-fo = iΩ [%] [db] TGF and vs. Output Power 6GHz, Vds =2V, Idq =62.5mA, % Duty Cycle, Efficiency Tuned Zs-fo = iΩ Zs-2fo = Ω 17.6 Zs-3fo = Ω Zl-fo = iΩ [%] Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

18 Model Drive-up Data GHz [db] TGF and vs. Output Power GHz, Vds =2V, Idq =ma, % Duty Cycle, Power Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω Zl-fo = iΩ [%] [db] TGF and vs. Output Power GHz, Vds =2V, Idq =ma, % Duty Cycle, Efficiency Tuned 0 Zs-fo = iΩ 19 Zs-2fo = Ω Zs-3fo = Ω 1 Zl-fo =.3+.19iΩ [%] [db] TGF and vs. Output Power GHz, Vds =2V, Idq =62.5mA, % Duty Cycle, Power Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω Zl-fo = iΩ [%] [db] TGF and vs. Output Power GHz, Vds =2V, Idq =62.5mA, % Duty Cycle, Efficiency Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω Zl-fo = iΩ [%] Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

19 Model Drive-up Data GHz [db] TGF and vs. Output Power GHz, Vds =2V, Idq =ma, % Duty Cycle, Power Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω Zl-fo = iΩ [%] [db] TGF and vs. Output Power GHz, Vds =2V, Idq =ma, % Duty Cycle, Efficiency Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω Zl-fo =.7+27.iΩ [%] [db] TGF and vs. Output Power GHz, Vds =2V, Idq =62.5mA, % Duty Cycle, Power Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω Zl-fo = iΩ [%] [db] TGF and vs. Output Power GHz, Vds =2V, Idq =62.5mA, % Duty Cycle, Efficiency Tuned Zs-fo = iΩ Zs-2fo = Ω Zs-3fo = Ω Zl-fo = iΩ [%] Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

20 Model A model is available for download from Modelithics (at by approved Qorvo customers. The model is compatible with the industry s most popular design software including Agilent ADS and National Instruments/AWR applications. Once on the Modelithics web page, the user will need to register for a free license before being granted the download. Mechanical Drawing Bond Pads Pad No. Description Dimensions 1 Gate 0.4 x Drain 0.4 x Die Backside Source / Ground x 0. Notes: 1. Units: millimeters 2. Thickness: 0.0 mm 3. Die x,y size tolerance: ± mm Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

21 Assembly Notes Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment (i.e. epoxy) not recommended. Reflow process assembly notes: Use AuSn (0/) solder and limit exposure to temperatures above 300 C to 3-4 minutes, maximum. An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use any kind of flux. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram. Force, time, and ultrasonics are critical bonding parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with inch wire. Disclaimer GaN/SiC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Bias-up Procedure 1. Set VG to 5 V. 2. Set ID limit to 70 ma. 3. Set VD to 2 V. 4. Adjust VG more positive until quiescent ID is 62.5 ma. 5. Set ID limit to 500 ma. 6. Apply RF signal. Bias-down Procedure 1. Turn off RF signal. 2. Turn off VD and wait 1 second to allow drain capacitor dissipation. 3. Turn off VG. Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo

22 Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device GaN devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Not HAST compliant. Solderability Compatible with gold/tin (3 C maximum reflow temperature) soldering processes. RoHs Compliance This part is compliant with EU 02/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (CHBr2) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@qorvo.com Fax: For technical questions and application information: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev D of 22 - Disclaimer: Subject to change without notice Qorvo