33-47 GHz Wide Band Driver Amplifier TGA4522
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- Solomon Knight
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1 33-47 GHz Wide Band Driver Amplifier Key Features Frequency Range: GHz 27.5 dbm Nominal 38GHz 27 dbm 38 GHz 36 dbm Pin = 19 dbm/tone 18 db Nominal 38GHz db Nominal Return 38GHz Bias: 6 4 ma Idq. um 3MI phemt Technology Chip Dimensions 2. x 1.45 x. mm (.79 x.57 x.4 in) Primary Applications Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM Product Description The TriQuint is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint s.um power phemt production process. The nominally provides 27.5 dbm saturated output power, and 27 dbm output power at 1dB Gain 38 GHz. It also has typical gain of 18 db, and return loss of db. The part is ideally suited for low cost emerging markets such as Digital Radio, Point-to-Point Radio and Point-to-Multi Point Communications. The is % DC and RF tested on-wafer to ensure performance compliance. Lead-Free & RoHS compliant. S-parameters (db) Pout (dbm) Measured Fixtured Data Bias Conditions: Vd = 6 V, Idq = 4 ma ORL IRL Gain Psat P1dB Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
2 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 8 V 2/ Vg Gate Voltage Range -2 TO V Id Drain Current 7 ma 2/ 3/ Ig Gate Current 16 ma 3/ P IN Input Continuous Wave Power 23 dbm P D Power Dissipation See note 4/ 2/ T CH Operating Channel Temperature C 5/ 6/ T M Mounting Temperature (3 Seconds) 3 C T STG Storage Temperature -65 to C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P D. 3/ Total current for the entire MMIC. 4/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P D (max) = ( C T BASE C) / 35.5 ( C/W) Where T BASE is the base plate temperature. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. 2 TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
3 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 C Nominal) PARAMETER TYPICAL UNITS Frequency Range GHz Drain Voltage, Vd 6. V Drain Current, Id 4 ma Gate Voltage, Vg -.6 V Small Signal Gain, S21 18 db Input Return Loss, S11 db Output Return Loss, S22 db Output 1dB Gain Compression, P1dB 26 dbm Saturated Power, Psat 27 dbm 19dBm/Tone 36 dbm TABLE III THERMAL INFORMATION PARAMETER TEST CONDITIONS T CH ( O C) R TJC ( C/W) T M (HRS) R θjc Thermal Resistance (channel to Case) Vd = 6 V Idq = 4 ma Pdiss = 2.4 W E+6 Note: Assumes eutectic attach using 1.5 mil 8/ AuSn mounted to a mil CuMo Carrier at 7 o C baseplate temperature. Worst case condition with no RF applied, % of DC power is dissipated. 3 TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
4 18 Measured Data Bias Conditions: Vd = 5-6 V, Idq = 4 ma 5V Gain (db) V Bias Conditions: Vd = 6 V, Idq = 4 ma Return Loss (db) IRL -25 ORL TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
5 Output 1dB Gain Compression (dbm) Measured Data Bias Conditions: Vd = 6 V, Idq = 4 ma V 5V V 5V Saturated Output Power (dbm) TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
6 Output OTOI Power (dbm) Pout Gain Ids Measured Data Bias Conditions: Vd = 6 V, Idq = 4 ma Freq = 35 GHz Ids (ma) Pin (dbm) Pout Gain Ids Freq = 4 GHz Output Power (dbm) Ids (ma) Pin (dbm) 6 TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
7 4 Measured Data Bias Conditions: Vd = 6 V, Idq = 4 ma, 19dBm/Tone OTOI (dbm) GHz 38GHz 39GHz 4GHz 37 OTOI (dbm) Output Power / Tone (dbm) 7 TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
8 -3 Measured Data Bias Conditions: Vd = 6 V, Idq = 4 ma, 19dBm/Tone IMD3 (dbc) GHz 38GHz 39GHz 4GHz - IMD3 (dbc) Output Power / Tone (dbm) 8 TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
9 RC B RC B Mechanical Drawing.8 (.4).261 (.).391 (.).53 (.21) (.53) 1.5 (.59) 1.67 (.66) 1.45 (.57) (.53) (.53) (.42).398 (.16) (.5).99 (.4) (.).53 (.21) (.53) 1.5 (.59) 1.67 (.66) (.75) 2. (.79) Units: millimeters (inches) Thickness:. (.4) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/-.51 (.2) GND is back side of MMIC Bond pad #1 (RF In). x. Bond pad #2 (N/C). x.8 Bond pad #3, 13 (Vg).8 x.8 Bond pad #4, 5, 7, 9, 11, 12 (Vd).8 x.8 Bond pad #6, (N/C).91 x.84 Bond pad #8 (RF Out). x. (.4 x.6) (.4 x.4) (.4 x.4) (.4 x.4) (.4 x.3) (.4 x.6) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
10 Recommended Chip Assembly Diagram Vd.1 F Vg.1 F pf pf pf 1. F 1. F TFN (mil Alumina) Wedge bonds or ribbons TFN (mil Alumina) Vg.1 F pf pf pf.1 F Vd 1. F 1. F To reduce these components (.1 F,, 1. F) connect: bottom to top bottom to top Bias Conditions: Vd = 6 V Vg = ~ -.6 V to get 4mA Id GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
11 Assembly Process Notes Reflow process assembly notes: Use AuSn (8/) solder with limited exposure to temperatures at or above 3 C (3 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web:
17-43 GHz MPA / Multiplier. S-Parameters (db) P1dB (dbm)
17-43 GHz MPA / Multiplier Key Features Frequency: 17-43 GHz 25 db Nominal Gain @ Mid-band 22 dbm Nominal Output P1dB 2x and 3x Multiplier Function.15 um 3MI phemt Technology Chip Dimensions 1.72 x.76
TGA2509. Wideband 1W HPA with AGC
Product Description The TriQuint TGA2509 is a compact Wideband High Power Amplifier with AGC. The HPA operates from 2-22 GHz and is designed using TriQuint s proven standard 0.25 um gate phemt production
Product Data Sheet August 5, 2008
TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier Key Features 0.25 um phemt Technology 17 db Nominal Gain 31 dbm Pout @ P1dB, Psat 33dBm @ 6V, 34dBm @7V Bias 6-7V @
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12- GHz Ku-Band 3-Stage Driver Amplifier Key Features 12- GHz Bandwidth 28 db Nominal Gain dbm P1dB Bias: 5,6,7 V, 80 ± 10% ma Self Bias 0.5 um 3MI mmw phemt Technology Chip Dimensions: 1.80 x 0.83 x 0.1
27-31 GHz 2W Balanced Power Amplifier TGA4513
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6-13 GHz Low Noise Amplifier TGA8399B-SCC
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4 Watt Ka-Band HPA Key Features Measured Performance Primary Applications Ka-Band VSAT Product Description
4 Watt Ka-Band HPA Key Features Frequency Range: 28-31 GHz 3 dbm Nominal Psat Gain: 24 db Return Loss: -8 db Bias: Vd = V, Idq = 1. A, Vg = -.75 V Typical Technology: 3MI.15 um Power phemt Chip Dimensions:
TGP GHz 180 Phase Shifter. Primary Applications. Product Description. Measured Performance
Amplitude Error (db) S21 (db) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 Measured Performance 0.0 140 30 31 32 33 34 35 36 37 38 39 40 0-1 -2-3 -4-5 State 0-6 State 1-7 -8-9 -10 30 31 32 33 34 35 36 37 38
TGA4811. DC - 60 GHz Low Noise Amplifier
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23-29 GHz High Power Amplifier TGA9070-SCC
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6-18 GHz High Power Amplifier TGA9092-SCC
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DC - 20 GHz Discrete power phemt
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Ka-Band 2W Power Amplifier Key Features 30-40 GHz Bandwidth > 33 dbm Nominal Psat @ Pin = 20dBm 18 db Nominal Gain Bias: 6 V, 50 ma Idq (1.9A under RF Drive) 0.15 um 3MI MMW phemt Technology Thermal Spreader
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High Power Ka-Band SPDT Switch
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10Gb/s Wide Dynamic Range Differential TIA
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Not Recommended for New Designs Advance Product Information 17-35GHz MPA/Multiplier TriQuint Recommends the TGA43-SM or TGA431-SM be used for New Designs Key Features Product Description The TriQuint TG44SM
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50 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz 47 dbm Nominal Psat 55% Maximum PAE 8.7 db Nominal Power Gain Bias: Vd = 28-35 V, Idq = 1 A, Vg = -3.6 V Typical Technology:
TGA4532 K-Band Power Amplifier
Applications Point-to-Point Radio Communication Product Features Functional Block Diagram Frequency Range: 17.5 20 GHz Power: 32.5 dbm Psat, 31.5 dbm P1dB Gain: 23 db TOI: 43 dbm @ 22 dbm SCL Return Loss:
TGF um Discrete GaAs phemt
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TGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
TGF Watt Discrete Power GaN on SiC HEMT
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17-24 GHz Linear Driver Amplifier. S11 and S22 (db -15. TriQuint Semiconductor: www. triquint.com (972) Fax (972)
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance
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Measured Fixtured Data Bias: 40mA Isolation (db)
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![Features. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %](/thumbs/84/89186722.jpg "Features. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %")
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Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]
![Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]](/thumbs/82/85923909.jpg "Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]")
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TGA2567-SM 2 20 GHz LNA Amplifier
Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with
20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS
Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software
71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710
Data Sheet FEATURES Gain: db typical Output power for db compression: dbm typical Saturated output power: 29 dbm typical Output third-order intercept: dbm typical Input return loss: 8 db typical Output
DC to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC8401
FEATURES Output power for db compression (PdB):.5 dbm typical Saturated output power (PSAT): 9 dbm typical Gain:.5 db typical Noise figure:.5 db Output third-order intercept (IP3): 26 dbm typical Supply
Features. = +25 C, Vdd = +6V, Idd = 375mA [1]
![Features. = +25 C, Vdd = +6V, Idd = 375mA [1]](/thumbs/86/94452749.jpg "Features. = +25 C, Vdd = +6V, Idd = 375mA [1]")
v.119 HMC86 POWER AMPLIFIER, 24 -.5 GHz Typical Applications The HMC86 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Saturated Output
Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]
![Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]](/thumbs/92/108090400.jpg "Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]")
v2.211 HMC949 Typical Applications The HMC949 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Features Saturated Output Power: +5.5 dbm
TGA2602-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma
![Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma](/thumbs/89/98911879.jpg "Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma")
v.1111 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram P1dB Output Power: + dbm Psat Output Power: +
0.5-20GHz Driver. GaAs Monolithic Microwave IC
Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide
0.5-20GHz Driver. GaAs Monolithic Microwave IC
CHA422-98F.-2GHz Driver GaAs Monolithic Microwave IC Description The CHA422-98F is a distributed driver amplifier which operates between. and 2GHz. It is designed for a wide range of applications, such
Advanced Information: AI GHz Low Noise Amplifier. GaAs Monolithic Microwave IC
: AI1801 GaAs Monolithic Microwave IC UMS has developed a two-stage self-biased wide band monolithic Low Noise Amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from
TGA2818-SM S-Band 30 W GaN Power Amplifier
S-Band 3 W GaN Power Amplifier Applications Military Radar Civilian Radar Wideband Amplifiers Product Features Functional Block Diagram Frequency Range: 2.8-3.7 GHz Pout: >.5 dbm (Pin=27 dbm) Large Signal
Data Sheet. AMMC GHz 0.2 W Driver Amplifier. Features. Description. Applications
AMMC-6333 18 33 GHz.2 W Driver Amplifier Data Sheet Chip Size: x 13 m (1 x 51 mils) Chip Size Tolerance: ± 1 m (±.4 mils) Chip Thickness: 1 ± 1 m (4 ±.4 mils) Pad Dimensions: 1 x 1 m (4 x 4 ±.4 mils) Description
HMC906A. Amplifiers - Linear & Power - CHIP. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram
Typical Applications Features The HMC96A is ideal for: Satellite Communications Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Saturated Output Power: +33.5
MECGaNC30. 4 to 6 GHz GaN HEMT Power Amplifier. Main Features. Product Description. Applications
Main Features 0.25µm GaN HEMT Technology 4.1 5.9 GHz full performances Frequency Range W Output Power @ Pin 27.5 dbm 37% PAE @ Pin 27.5 dbm % PAE @ Pout Watt 27 db Small Signal Gain Product Description
Features. = +25 C, Vdd = 5V, Idd = 200 ma*
v3.13 HMC9 Typical Applications The HMC9 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Noise
GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm)
Output power (dbm) G Description GaAs Monolithic Microwave IC in SMD leadless package The is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a
2-22GHz LNA with AGC. GaAs Monolithic Microwave IC
Linear gain, Return Losses (db) WWG A3667A A3688A UMS 67A 88A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates
D1H010DA1 10 W, 6 GHz, GaN HEMT Die
D1H010DA1 10 W, 6 GHz, GaN HEMT Die D1H010DA1 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT). The D1H010DA1, operating at 48 V, offers high efficiency, great gain, easy of
HMC465 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP. GaAs phemt MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz. Electrical Specifications, T A.
v9.114 DRIVER AMPLIFIER, DC - 2 GHz Typical Applications The wideband driver is ideal for: OC192 LN/MZ Modulator Driver Telecom Infrastructure Test Instrumentation Military & Space Functional Diagram Features
Features. = +25 C, Vdd = 5V, Idd = 85mA*
Typical Applications The is ideal for use as a medium power amplifier for: Point-to-Point and Point-to-Multi-Point Radios VSAT Functional Diagram Features Saturated Power: +23 dbm @ 25% PAE Gain: 15 db
MECGaNLNACX. C- to X-Band GaN HEMT Low Noise Amplifier. Main Features. Product Description. Typical Applications. Measured Data
Main Features Product Description MECGaNLNACX is a 0.25µm GaN HEMT Low Noise Amplifier designed and tested by MEC for C- to X-Band applications. In the frequency range from 5 GHz to 12 GHz MECGaNLNACX
Data Sheet. AMMC GHz Amplifier. Description. Features. Applications
AMMC - 518-2 GHz Amplifier Data Sheet Chip Size: 92 x 92 µm (.2 x.2 mils) Chip Size Tolerance: ± 1µm (±.4 mils) Chip Thickness: 1 ± 1µm (4 ±.4 mils) Pad Dimensions: 8 x 8 µm (.1 x.1 mils or larger) Description
MAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information
Features 15 W Power Amplifier 42 dbm Saturated Pulsed Output Power 17 db Large Signal Gain P SAT >40% Power Added Efficiency Dual Sided Bias Architecture On Chip Bias Circuit 100% On-Wafer DC, RF and Output
TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
TGA4906-SM 4 Watt Ka-Band Power Amplifier
TGA496-SM Applications Ka-Band Sat-Com VSAT 496 12 M34 QFN x mm 32L Product Features Functional Block Diagram Frequency Range: 28 31 GHz Power: 36 dbm Psat Gain: db Bias: Vd = 6 V, Idq = 1.6 A, Vg = -.7
GHz 10 Watt Power Amplifier
ASL 1 8. 1 GHz 1 Watt Power Amplifier Features Frequency Range : 8. 1GHz. dbm Psat 14 db Power gain 27% PAE High IP3 Input Return Loss > 1 db Output Return Loss > 9 db Dual bias operation DC decoupled
14 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer HMC292A
14 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer FEATURES Passive: no dc bias required Conversion loss (downconverter): 9 db typical at 14 GHz to 3 GHz Single-sideband noise figure: 11 db typical at
Features. = +25 C, Vdd1, Vdd2 = +5V
v.11 HMC51 POWER AMPLIFIER, 5-2 GHz Typical Applications Features The HMC51 is ideal for use as a driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors
18-40 GHz Low Noise Amplifier
18-40 GHz Low Noise Amplifier AMT2172011 Features Frequency Range: 18-40 GHz Better than 4.5 db Noise Figure Single supply operation DC decoupled Input and Output 10 db Nominal Gain 6dBm Nominal P1dB Input