Measured Fixtured Data Bias: 40mA Isolation (db)
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- Beatrice Ward
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1 77 GHz Transceiver Switch Key Features I/O Compatible with MA4GC Antenna Ports Receive, Source, and LO Ports 2.5 db RX/TX Insertion Loss Typical 4 db Source/Mixer Isolation Typical 25 db Ant/Ant Isolation Typical Bias Supply: 1.3V@4mA Die Size: 1.7 x 2.16 x.1 mm Primary Applications Automotive Radar Instrumentation Product Description Radar Application Schematic The is a 77 GHz switch matrix for use in automotive radar transceivers. The switch is designed using TriQuint s proven VPIN diode production process. Three antenna ports may be selected independently and directed to a source (J5) or a receive (J4) port. Additionally, the source port can be directed to the LO port for use with a downconverting mixer. IF J1 J4 RX Port B1 B2 J2 B3 B5 J6 LO Port J3 J5 Source Port Insertion Loss (db) Note: Datasheet is subject to change without notice. Measured Fixtured Data Bias: 4mA Receive Path Transmit Path LO Path Isolation (db) Ant / Ant Source / Ant Source / LO Source / RX 1
2 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES V + Positive Supply Voltage 2 V 2/ V - Negative Supply Voltage -8 V 2/ I + Positive Supply Current (Quiescent) 8 ma 2/, 3/ P IN Input Continuous Wave Power TBD P D Power Dissipation 16 mw 2/ T M Mounting Temperature (3 Seconds) 32 C T STG Storage Temperature -65 to 15 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P D. 3/ Control line B1, B2, B3 maximum current = 2 ma Control line, B5 maximum current = 4 ma TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 C Nominal) PARAMETER TYPICAL UNITS Frequency Range 75-8 GHz Bias Supply 4mA Insertion Loss, Port J3 to J4 (RX) 2.5 db Insertion Loss, Port J1 to J5 (TX) 2.5 db Insertion Loss Source to LO, Port J5 to J6 (RX) 1.8 db Isolation Source to RX, Port J4 to J5 (RX) >4 db Isolation Source to Antenna, Port J1 to J5 (RX) >4 db Isolation Antenna to Antenna, Port J1 to J3 (RX,TX) 25 db Isolation Source to LO, Port J5 to J6 (TX) 2 db Return Loss >8 db 2
3 -1-2 Preliminary Measured Data Bias: 4mA LO Path Insertion Loss (db) Transmit Path Receive Path Receive Path Transmit Path LO Path Source/LO Ant/Ant Isolation (db) Source/RX Source/Ant Ant / Ant Source / Ant Source / LO Source / RX 3
4 Return Loss (db) Return Loss (db) Preliminary Measured Data Antenna 3 to RX Port RX Port Antenna Port Source Port to Antenna 1 Antenna Port Source Port
5 Preliminary Measured Data Return Loss (db) Source Port to LO Port LO Port Source Port
6 Mechanical Drawing.123 (.5).88 (.35) 1.23 (.48) (.64) 2.16 (.85) 2.58 (.81) (.8) 1.87 (.74) (.74) (.5) (.5) (.31).463 (.18) (.13).123 (.5) (.4).13 (.4).341 (.13).717 (.28) (.65) (.69) Units: millimeters (inches) Thickness:.116 (.4) Chip edge to bond pad dimensions are shown to center of bond pads Chip size tolerance: +/-.5 (.2) GND IS BACKSIDE OF MMIC Bond Pad # 1 (Antenna Port 1) Bond Pad # 2 (VB1) Bond Pad # 3 (Antenna Port 2) Bond Pad # 4 (VB2) Bond Pad # 5 (VB3) Bond Pad # 6 (Antenna Port 3) Bond Pad # 7 (VB5) Bond Pad # 8 (Source Port) Bond Pad # 9 (LO Port) Bond Pad # 1 (V) Bond Pad # 11 (Receiver Port).1 x.1 (.4 x.4).14 x.1 (.6 x.4).1 x.1 (.4 x.4).1 x.14 (.4 x.6).14 x.1 (.6 x.4).1 x.1 (.4 x.4).14 x.1 (.6 x.4).1 x.1 (.4 x.4).1 x.1 (.4 x.4).1 x.14 (.4 x.6).1 x.1 (.4 x.4) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6
7 Assembly Drawing External Interface (TFN) Substrate: Alumina ε r =9.8 Thickness=5mil Switch MMIC Substrate: GaAs ε r =12.9 Thickness=4mil 5mil 3mil TFN 3 Bondwires Gap ~4mil Diameter=.7mil Height< 1mil B1 B2 B3 Microstrip Trace Width=12mm (5Ω) RF I/O Pad Note: Ribbon bond is acceptable (instead of 3 bondwires) Recommended Interconnect Scheme B5 Note: Unused Ports should be terminated with 5 Ω. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7
8 Application Schematic J2 J1 B2 J3 B1 B3 J4 RX Port B5 J5 IF J6 Source Port LO Port Function Selected Antenna (B1, B2, or B3) Bias State Table Unused Antennas (B1, B2, or B3) Transmit -5 to V +1mA each +2mA V Receive -5 to V +1mA each V +2mA Forward voltage is ~ +1.3V to achieve bias current B5 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8
9 Assembly Process Notes Reflow process assembly notes: Use AuSn (8/2) solder with limited exposure to temperatures at or above 3 C (3 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: Wedge bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 2 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TriQuint:
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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v0.0907 HMC37 Typical Applications
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DRIVER AMPLIFIER, DC - 3 GHz Typical Applications This is ideal for: 0 Gb/s Lithium Niobate/ Mach Zender Fiber Optic Modulators Broadband Gain Block for Test & Measurement Equipment Broadband Gain Block
HMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description
Typical Applications The is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram v2.917 ATTENUATOR, 2-5 GHz Features Wide Bandwidth:
Features. Gain: 15.5 db. = +25 C, Vdd = 5V
Typical Applications v2.97 Features AMPLIFIER, 3.5-7. GHz The HMC392 is ideal for: Gain: 5.5 db Point-to-Point Radios VSAT LO Driver for HMC Mixers Military EW, ECM, C 3 I Space Functional Diagram Noise
Features. = +25 C, Vdd 1, 2, 3 = +3V
v3.917 Typical Applications Features The HMC17 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
Features. = +25 C, Vdd= 5V, Idd= 60 ma*
Typical Applications The HMC63 is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram v.67 Vgg2: Optional Gate Bias for AGC HMC63
HMC465 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP. GaAs phemt MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz. Electrical Specifications, T A.
v9.114 DRIVER AMPLIFIER, DC - 2 GHz Typical Applications The wideband driver is ideal for: OC192 LN/MZ Modulator Driver Telecom Infrastructure Test Instrumentation Military & Space Functional Diagram Features
HMC650 TO HMC658 v
HMC65 TO v1.38 WIDEBAND FIXED ATTENUATOR FAMILY, DC - 5 GHz HMC65 / 651 / 65 / 653 / 654 / 655 / 656 / 657 / 658 Typical Applications The HMC65 through are ideal for: Fiber Optics Microwave Radio Military
Parameter Frequency Typ Min (GHz)
The is a broadband MMIC LO buffer amplifier that efficiently provides high gain and output power over a 20-55 GHz frequency band. It is designed to provide a strong, flat output power response when driven
HMC561 FREQUENCY MULTIPLIER - ACTIVE - CHIP. Electrical Specifications, T A. Features. Typical Applications. General Description. Functional Diagram
Typical Applications The HMC51 is suitable for: Clock Generation Applications: SONET OC-19 & SDH STM- Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram Features High
HMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features
Typical Applications Features This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Output IP: + dbm P1dB: +24 dbm Gain: 17 db Supply Voltage: +5V
Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]
![Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]](/thumbs/89/100957500.jpg "Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]")
HMC-ALH12 Typical Applications This HMC-ALH12 is ideal for: Features Noise Figure: 2.5 db Wideband Communications Receivers Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military
11-15 GHz 0.5 Watt Power Amplifier
11-15 GHz 0.5 Watt Power Amplifier Features Frequency Range : 11-15GHz 27.5 dbm output Psat 13 db Power gain 25% PAE High IP3 Input Return Loss > 11 db Output Return Loss > 6 db Dual bias operation No
Features. DC - 2 GHz GHz Supply Current (Idd) 400 ma
Typical Applications The HMC637A is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: +3.5 dbm Gain:
MMIC 2-18GHz 90 Splitter / Combiner. Green Status. Refer to our website for a list of definitions for terminology presented in this table.
MMIC 2-18GHz 90 Splitter / Combiner MQS-0218 1 Device Overview 1.1 General Description The MQS-0218 is a MMIC 2GHz 18GHz 90 splitter/combiner. Wire bondable 50Ω terminations are available on-chip. Passive
5 6.4 GHz 2 Watt Power Amplifier
5 6.4 GHz 2 Watt Power Amplifier Features Frequency Range : 5 6.4GHz 32.5 dbm output P1dB 9 db Power gain 32% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 12 db Dual bias operation No external
HMC814. GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications. Functional Diagram. General Description
v.119 Typical Applications The is ideal for: Clock Generation Applications: SONET OC-19 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Sensors Functional Diagram Features
17-24 GHz Linear Driver Amplifier. S11 and S22 (db -15. TriQuint Semiconductor: www. triquint.com (972) Fax (972)
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
MMIC GHz Quadrature Hybrid
MMIC 3.5-10GHz Quadrature Hybrid MQH-3R510 1 Device Overview 1.1 General Description The MQH-3R510 is a MMIC 3.5 GHz 10 GHz quadrature (90 ) hybrid. Wire bondable 50Ω terminations are available on-chip.
Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel
Design Assistance Assembly Assistance Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming Customised Pack Sizes / Qtys Support for all industry recognised
GHz 6-Bit Digital Attenuator
.5 1.5 GHz 6-Bit Digital Attenuator Features Frequency Range :.5 to 1.5 GHz 31.5dB Attenuation Range 5.2dB Insertion loss max..5db RMS attenuation error 23 max. phase variation 1.6:1 Input\Output VSWR
Features. The HMC985 is ideal for: = +25 C, See Test Conditions. Parameter Condition Min. Typ. Max. Units db. Output Return Loss 13 db
Typical Applications The is ideal for: Point-to-Point Radio Vsat Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram v.211 attenuator, 2-5 GHz Features Wide Bandwidth:
5 6 GHz 10 Watt Power Amplifier
5 6 GHz 10 Watt Power Amplifier Features Frequency Range : 5 6GHz 40 dbm Output Power 18 db Power gain 30% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 7.5 db Dual bias operation No external