TGA4811. DC - 60 GHz Low Noise Amplifier
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1 TGA11 DC - GHz Low Noise Amplifier Key Features GHz Bandwidth 3. db noise figure > 15 db small signal gain 13 dbm P1dB +/- 7 ps group delay variation Bias:.5V, 5 ma.15 um 3MI mhemt Technology Chip Dimensions: 1.3 x 1. x.1 mm (.51 x. x.) in Output P1dB (dbm) Gain (db) Measured Data Bias Conditions: Vd = V, Id = 5 ma P1dB at V,5 ma P1dB at.5v, ma NF at.5v, ma Frequency (GHz) Frequency (GHz) Return Loss (db) Noise Figure (db) Primary Applications Wideband LNA / gain block Test Equipment Gb/s optical networks Description The TriQuint TGA11 is a DC - GHz low noise amplifier that typically provides 15 db small signal gain and input and output return loss is <1dB. Normal Noise Figure is 3. db from - GHz. P1dB is 13 dbm. The TGA11 is an excellent choice for Test Equipment, Gb/s optical network applications, and general wideband LNA and Gain Block applications. The TGA11 is 1% RF tested to ensure performance compliance. Lead-Free & RoHS compliant. Samples are available. Subject to change without notice. TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com 1
2 TGA11 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES V + Positive Supply Voltage.5 V / V - Negative Supply Voltage Range - TO V I + Positive Supply Current m A I G Gate Supply Current 1 ma 3/ P IN Input Continuous Wave Power dbm P D Power Dissipation.9 W / / T CH Operating Channel Temperature 11 C 5/ T M Mounting Temperature (3 Seconds) 175 C T STG Storage Temperature -5 to 11 C 1/ These ratings represent the maximum operable values for this device. / Combinations of resistors voltage and 3V (MAX) on mhemt. 3/ Total current for the entire MMIC. / When operated at this bias condition with a base plate temperature of 7 o C, the median life will be reduced. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com
3 TGA11 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 5 C, Nominal) PARAMETER TYPICAL UNITS Drain Voltage V Quiescent Current 5 ma Small Signal Gain, S1 15 db Input Return Loss, S11 1 db Output Return Loss, S 15 db Reverse Isolation, S - db Output Power (P1dB) 13 dbm saturated, Psat 15 dbm Noise figure 3. db TABLE III THERMAL INFORMATION Parameter Test Conditions T CH ( o C) R θjc Thermal Vd = V Resistance I D =.5 A (channel to backside Pdiss =.3 W of package) R θjc ( C/W) T M (HRS) E Note: Die backside epoxy attached to carrier at 7 C baseplate temperature. TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com 3
4 Gain (db) Measured Data Bias Conditions: Vd = V, Id = 5 ma TGA Frequency (GHz) Return Loss (db) 1 1 P1dB at V,5 ma Output P1dB (dbm) 1 P1dB at.5v, ma NF at.5v, ma 1 Noise Figure (db) Frequency (GHz) TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com
5 TGA11 Measured Data Bias Conditions: Vd = V, Id = 5 ma 7 Group Delay (ps) Frequency (GHz) 1 V, 5mA Gain (db) 1 1.5V, ma V, 5mA Output Power (dbm).5v, ma Pin (dbm) TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com 5
6 TGA11 Mechanical Drawing Vg VD RF OUT RF IN VG1 Units: millimeters Thickness:.1 Chip edge to bond pad dimension are shown to center of bond pad. Chip size tolerance: ±.51 VD VG1 VG RF IN RF OUT Pad size (mm).1x.1.1x.1.1x.1.1x.1.1x.1 TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com
7 TGA11 Chip Assembly Diagram Vg Vd *.1uF 1pF 1pF RF OUT RF IN 1pF *.1uF Vg1 3 (Three).7 mil chisel bond wires at RF IN and RF OUT or 1 (one) 3 mil ribbon at RF IN and RF OUT. Vg is optional for the circuit. * 1pF &.1uF capacitors can be substituted with the following integrated capacitors: Part Number GZSYCKJMAW VBX7R15Z1VHX M anufacturer AVX Presidio TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com 7
8 TGA11 Optional Testing Circuit Schematic 1pF.1uF V d (No Connection) Vg (No Connection) VDT 1pF Vd(RFout) RF(in) TGA11 Bias Tee (PSPL 55) RF(out) DC Block (PSPL 559) 1pf.1uF Vg1 * 1pF &.1uF capacitors can be substituted with the following integrated capacitors: Part Number Manufacturer GZSYCKJMAW AVX VBX7R15Z1VHX Presidio TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com
9 TGA11 Recommended Bias-Up Procedure NOTE: To protect the device, this MMHEMT MMIC will be biased differently than typical PHEMT devices NOTE: Be sure proper ESD protection is in place A. If biasing Drain through Vd DC port 1. Leave Vg at V. Increase Vd to 1 V 3. Adjust Vg to reach 5 ma. Increase Vd to.5 V 5. Repeat steps 3 and until correct bias is reached (i.e. Vd =.5 V, Id = 5mA). To Bias-down device, turn Vg to V and decrease Vd to V B. If Biasing Drain through Bias Tee and RF port 1. Leave Vg at V. Increase Vd to 1 V 3. Adjust Vg to reach 5 ma. Increase Vd to V 5. Repeat steps 3 and until correct bias is reached (i.e. Vd = V, Id = 5mA). To Bias-down device, turn Vg to V and decrease Vd to V TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com 9
10 TGA11 Assembly Process Notes Reflow process assembly notes: Use epoxy with limited exposure to temperatures at 175 o C. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 175 o C. TriQuint Semiconductor Texas Phone: (97)99 5 Fax: (97)99 5 info-mmw@tqs.com 1
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![Features. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %](/thumbs/84/89186722.jpg "Features. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %")
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![Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]](/thumbs/82/85923909.jpg "Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]")
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Features Functional Block Diagram Ultra low noise performance Low current consumption Small die size GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD6 is a highly efficient GaAs MMIC low noise amplifier ideally
GaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
Data Sheet GaAs, phemt, MMIC, Power Amplifier, GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): 1 dbm typical Gain: 11
2-22GHz LNA with AGC. GaAs Monolithic Microwave IC. Performance (db)
Performance (db) GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range
it to 18 GHz, 2-W Amplifier
it218 to 18 GHz, 2-W Amplifier Description Features Absolute Maximum Ratings Electrical Characteristics (at 2 C) -ohm system V DD = 8 V Quiescent current (I DQ = 1.1 A The it218 is a three-stage, high-power
Features. = +25 C, 50 Ohm System. Return Loss (Input and Output) 5-18 GHz 8 db
v.89 4 ANALOG PHASE SHIFTER Typical Applications The is ideal for: Fiber Optics Military Test Equipment Features Wide Bandwidth: Phase Shift: >4 Single Positive Voltage Control Small Size: 2. x 1.6 x.1
DC to 30GHz Broadband MMIC Low-Noise Amplifier
DC to 30GHz Broadband MMIC Low-Noise Amplifier Features Great 0.04-30GHz performance: Flat gain (10.25 ± 0.75dB) High Psat at 30GHz (21dBm) High P1dB at 30GHz (18dBm) Excellent input / output return loss
81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector HMC8142
Data Sheet 8 GHz to 86 GHz, E-Band Power Amplifier With Power Detector FEATURES GENERAL DESCRIPTION Gain: db typical The is an integrated E-band gallium arsenide (GaAs), Output power for db compression
5W X Band Medium Power Amplifier. GaN Monolithic Microwave IC
GaN Monolithic Microwave IC Description V+ The CHA6710-99F is a two stage Medium Power Amplifier operating between 8.0 and 12.75GHz. It typically provides 5W of saturated output power and 36% of power
Features. = +25 C, Vdd = 5V, Idd = 85mA*
Typical Applications The is ideal for use as a medium power amplifier for: Point-to-Point and Point-to-Multi-Point Radios VSAT Functional Diagram Features Saturated Power: +23 dbm @ 25% PAE Gain: 15 db
18W X-Band High Power Amplifier. GaN Monolithic Microwave IC
CHA8611-99F GaN Monolithic Microwave IC Description V+ The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43%
Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma
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v.1111 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram P1dB Output Power: + dbm Psat Output Power: +
TGV2204-FC. 19 GHz VCO with Prescaler. Key Features. Measured Performance. Primary Applications Automotive Radar. Product Description
19 GHz VCO with Prescaler Key Features Frequency Range: 18.5 19.5 GHz Output Power: 7 dbm @ 19 GHz Phase Noise: -105 dbc/hz at 1 MHz offset, fc=19 GHz Prescaler Output Freq Range : 2.31 2.44 GHz Prescaler
0.5-20GHz Driver. GaAs Monolithic Microwave IC
Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide
Features. = +25 C, Vdd = 5V, Idd = 200 ma*
v3.13 HMC9 Typical Applications The HMC9 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Noise
CMD GHz GaN Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram High gain Low noise figure High linearity High RF power survivability Small die size Description Vdd The CMD9 is a broadband MMIC GaN low noise amplifier ideally suited
0.5-20GHz Driver. GaAs Monolithic Microwave IC
CHA422-98F.-2GHz Driver GaAs Monolithic Microwave IC Description The CHA422-98F is a distributed driver amplifier which operates between. and 2GHz. It is designed for a wide range of applications, such
Features. = +25 C, Vdd = 5V
v1.1 AMPLIFIER, 3. - 7. GHz Typical Applications The HMC39A is ideal for: Point-to-Point Radios VSAT LO Driver for HMC Mixers Military EW, ECM, C 3 I Space Functional Diagram Features Gain: 17. db Noise
MAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information
Features 15 W Power Amplifier 42 dbm Saturated Pulsed Output Power 17 db Large Signal Gain P SAT >40% Power Added Efficiency Dual Sided Bias Architecture On Chip Bias Circuit 100% On-Wafer DC, RF and Output
Gb/s Optical Modulator Driver OC-192 Metro and Long Haul Applications Surface Mount Package
9.9-12.5Gb/s Optical Modulator Driver OC-192 Metro and Long Haul Applications Surface Mount Package Description Product Datasheet Key Features and Performance Metro MSA Compatible Wide Drive Range (3V
5-20GHz MMIC Amplifier with Integrated Bias
5-20GHz MMIC Amplifier with Integrated Bias Features Excellent performance 5-18GHz: High, flat gain (15 ± 0.5dB) Good return loss (15dB) 17.5dBm P1dB, 20dBm Psat Mixed-signal 3.3V operation: Similar small-signal
GHz GaAs MMIC Power Amplifier
Features Excellent Driver Stage. Small Signal Gain +4. m P Compression Point % OnWafer RF, DC and Output Power Testing % Visual Inspection to MILSTD Method Chip Device Layout X General Description Mimix
71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710
FEATURES Gain: db typical Output power for db compression: dbm typical Saturated output power: 29 dbm typical Output third-order intercept: dbm typical Input return loss: 8 db typical Output return loss:
GHz Low Noise Amplifier
8.0-12.0 GHz Low Noise Amplifier Features Frequency Range : 8.0-12.0 GHz Low Noise Figure < 1.7 db 26 db nominal gain 12 dbm P 1dB High IP3 Input Return Loss > 10 db Output Return Loss > 10 db DC decoupled
Features. = +25 C, Vdd= +8V *
Typical Applications Features This is ideal for: Fiber Optic Modulator Driver Fiber Optic Photoreceiver Post Amplifi er Gain Block for Test & Measurement Equipment Point-to-Point/Point-to-Multi-Point Radio
TGA2818-SM S-Band 30 W GaN Power Amplifier
S-Band 3 W GaN Power Amplifier Applications Military Radar Civilian Radar Wideband Amplifiers Product Features Functional Block Diagram Frequency Range: 2.8-3.7 GHz Pout: >.5 dbm (Pin=27 dbm) Large Signal
Data Sheet AMMC KHz 80 GHz TWA. Description. Features. Typical Performance (Vd=5V, Idsq=0.1A) Component Image.
AMMC-525 3KHz 8 GHz TWA Data Sheet Description The AMMC-525 MMIC is a 3KHz to 8GHz ultra broadband traveling wave amplifier. In this operational frequency band, AMMC-525 provides 8dB gain with better than
2-22GHz LNA with AGC. GaAs Monolithic Microwave IC
Linear gain, Return Losses (db) WWG A3667A A3688A UMS 67A 88A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates