D1H010DA1 10 W, 6 GHz, GaN HEMT Die
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1 D1H010DA1 10 W, 6 GHz, GaN HEMT Die D1H010DA1 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT). The D1H010DA1, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications. FEATURES 12 W Nominal P SAT 83 % Maximum Drain Efficiency 48 V Operation High Breakdown Voltage Up to 6 GHz Operation Chip Dimensions: 880 x 920 x 100 um APPLICATIONS Cellular Infrastructure Class AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms 1 / 7
2 Absolute Maximum Ratings (not simultaneous; Tc = 25 ) Parameter Symbol Rating Units Drain-Source Voltage VDSS 150 VDC Gate-Source Voltage VGS -10, +2 VDC Storage Temperature TSTG -65, +150 C Operating Junction Temperature TJ 225 C Thermal Resistance 1 Rθjc 21.8 C /W Maximum Forward Gate Current IGMAX 1.02 ma Mounting Temperature 2 TS 320 C Electrical Characteristics (Frequency = 2.6 GHz unless otherwise stated; Tc = 25 C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Pinch-Off Voltage VP V VDS = 10 V, IDS = 1.02 ma Drain Current 3 ISAT A VDS = 6 V, VGS = 2.0 V Drain-Source Breakdown VBR V VGS = -10 V, ID = 1.02 ma Voltage On Resistance RON Ω VDS = 0.1 V Gate Forward Voltage VG-ON V IGS = 1.02 ma RF Characteristics (Typical) 4 Maximum Power Tuning Gain (db) PSAT (dbm) PSAT (W) DE (%) Maximum Drain Efficiency Tuning Gain (db) PSAT (dbm) PSAT (W) DE (%) Notes: 1 Assumes eutectic attach using 1.0 mil thick 80/20 AuSn mounted to a 10 mm 10 mm 40 mil CPC141 Carrier Plate. PDISS = 4 W and Case Temperature = 85 C. 2 Maximum temperature during die attach is 320 C for 30 seconds. 3 Scaled from PCM data. 4 Tested in Load Pull System, Frequency = 2600 MHz, Pulsed Width = 100 μs, Duty Cycle = 10 %. 2 / 7
3 DIE Dimensions (units in Millimeter) Overall die size 880 x 920 (+0 / -50) microns, die thickness 100 microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad No. Description 2 Gate Pad 3 Drain Pad 1 Source / Ground Die Backside Source / Ground Assembly Notes: Recommended solder is AuSn (80 / 20) solder. Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. 3 / 7
4 Gmax (db) Gain (db) DE (%) K Factor PRELIMINARY Typical Performance Figure 1. D1H010DA1, Gain and Efficiency vs. Output Power V DD = 48 V, I DQ = 30 ma, Frequency = 2.6 GHz, Maximum Power Tuned and Maximum Efficiency Tuned in Load Pull System Gain Maximum Efficiency Tuned DE Maximum Power Tuned Maximum Efficiency Tuned Maximum Power Tuned Pout (dbm) Figure 2. D1H010DA1 Gmax and K Factor vs. Frequency V DD = 48 V, I DQ = 30 ma Gmax K Factor Freq (MHz) 4 / 7
5 Typical Die S-Parameters (Small Signal, VDD = 48 V, IDQ = 30 ma, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz / 7
6 3.7 GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz / 7
7 Contact Information For sales or technical support: Home Page: Tel: Zip Code: Company Address: No.18 Chenfeng Road, Kunshan, Jiangsu Province, China 7 / 7
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Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 8 ma Operational Voltage
10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance Output Power: 16W at
CGH55030F2 / CGH55030P2
Rev 3.2 April 2012 CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
4 Watt Ka-Band HPA Key Features Measured Performance Primary Applications Ka-Band VSAT Product Description
4 Watt Ka-Band HPA Key Features Frequency Range: 28-31 GHz 3 dbm Nominal Psat Gain: 24 db Return Loss: -8 db Bias: Vd = V, Idq = 1. A, Vg = -.75 V Typical Technology: 3MI.15 um Power phemt Chip Dimensions:
2-22GHz LNA with AGC. GaAs Monolithic Microwave IC. Performance (db)
Performance (db) GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range
Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]
![Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]](/thumbs/89/100957500.jpg "Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]")
HMC-ALH12 Typical Applications This HMC-ALH12 is ideal for: Features Noise Figure: 2.5 db Wideband Communications Receivers Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military
= 25 C) of Demonstration Amplifier. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units. 43 dbm
Rev 3.1 - June 2015 CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Features. = +25 C, Vdd= +8V *
Typical Applications Features This is ideal for: Fiber Optic Modulator Driver Fiber Optic Photoreceiver Post Amplifi er Gain Block for Test & Measurement Equipment Point-to-Point/Point-to-Multi-Point Radio
CGH40120P. 120 W, RF Power GaN HEMT FEATURES APPLICATIONS
Rev 3.1 - November 2017 CGH40120P 120 W, RF Power GaN HEMT Cree s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail,
CMD GHz Active Frequency Doubler. Features. Functional Block Diagram. Description
Features Functional Block Diagram High output power Excellent Fo isolation Broadband performance Small die size Description The CMD214 die is a broadband MMIC GaAs x2 active frequency multiplier. When
6-18 GHz High Power Amplifier TGA9092-SCC
6-18 GHz High Power Amplifier Key Features and Performance Dual Channel Power Amplifier 0.25um phemt Technology 6-18 GHz Frequency Range 2.8 W/Channel Midband Pout 5.6 W Pout Combined 24 db Nominal Gain
DC to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC8401
FEATURES Output power for db compression (PdB):.5 dbm typical Saturated output power (PSAT): 9 dbm typical Gain:.5 db typical Noise figure:.5 db Output third-order intercept (IP3): 26 dbm typical Supply
TGA4811. DC - 60 GHz Low Noise Amplifier
TGA11 DC - GHz Low Noise Amplifier Key Features GHz Bandwidth 3. db noise figure > 15 db small signal gain 13 dbm P1dB +/- 7 ps group delay variation Bias:.5V, 5 ma.15 um 3MI mhemt Technology Chip Dimensions:
1W High Linearity and High Efficiency GaAs Power FETs
1W High Linearity and High Efficiency GaAs Power FETs FEATURES! 1W Typical Power at 6 GHz PHOTO ENLARGEMENT! Linear Power Gain: G L = 13 db Typical at 6 GHz! High Linearity: IP3 = 4 dbm Typical at 6 GHz!