TGF2929-HM 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor
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- Randolf Harrison
- 6 years ago
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1 General Description The Qorvo TGF2929-HM is a 0 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with Qorvo s proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Hermetic package Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram Product Features Frequency: DC to 3.5 GHz Output Power (P3dB): 132 W at 2 GHz Linear : 17.4 db at 2 GHz Typical 3dB: 72% at 2 GHz Operating Voltage: 28 V Low thermal resistance package CW and Pulse capable Applications Space radar Satcomm Military radar Civilian radar Land mobile and military radio communications Test instrumenation Wideband or narrowband amplifiers Jammers Ordering info Part No. ECCN Description TGF2929-HM EAR99 DC 3.5 GHz packaged part TGF2929-HM EAR GHz EVB EVB1 Rev. A - 1 of 21 - Disclaimer: Subject to change without notice
2 Absolute Maximum Ratings 1 Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, VG -7 to 0 V Drain Current, IDSS 22 A Gate Current Range, IG See page 4. ma Power Dissipation, CW, PDISS 1 W RF Input Power at 2 GHz, CW, Ω, T = 25 C +42 dbm Channel Temperature, TCH 275 C Mounting Temperature ( Seconds) 3 C Storage Temperature 40 to +1 C 1.. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions 1 Parameter Min Typ Max Units Operating Temp. Range C Drain Voltage Range, VD V Drain Current, ID 7.2 A Gate Voltage, VG 2.8 V Channel Temperature (TCH) 2 C Power Dissipation, CW (PD) 2 98 W Power Dissipation, Pulsed (PD) 2, W 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package at 85 C 3. Pulse Width = 0 us, Duty Cycle = % Rev. A - 2 of 21 - Disclaimer: Subject to change without notice
3 Pulsed Characterization Load Pull Performance Power Tuned 1 Parameters Typical Values Unit Frequency, F GHz Linear, GLIN db Output Power at 3dB compression point, P3dB dbm Power-Added-Efficiency at 3dB compression point, 3dB % at 3dB compression point db 1. VD = +28 V, ID = 2 ma, Temp = +25 C, Pulse Width = 0 us, Duty Cycle = % Pulsed Characterization Load Pull Performance Efficiency Tuned 1 Parameters Typical Values Unit Frequency GHz Linear, GLIN db Output Power at 3dB compression point, P3dB dbm Power-Added-Efficiency at 3dB compression point, 3dB % at 3dB compression point, db G3dB 1. VD = +28 V, ID = 2 ma, Temp = +25 C, Pulse Width = 0 us, Duty Cycle = % RF Characterization GHz EVB Performance At 3.3 GHz 1 Parameter Min Typ Max Units Linear, GLIN 13.9 db Output Power at 3dB compression point, P3dB.5 dbm Power-Added-Efficiency at 3dB compression point, 54 % 3dB at 3dB compression point, G3dB.9 db 1. VD = +28 V, ID = 2 ma, Temp = +25 C, Pulse Width = 0 us, Duty Cycle = % RF Characterization Mismatch Ruggedness at 3.3 GHz Symbol Parameter db Compression Typical VSWR Impedance Mismatch Ruggedness 3 :1 Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 2 ma, Pulse Width = 0 us, Duty Cycle = %, Driving input power is determined at pulsed compression under matched condition at EVB output connector. Rev. A - 3 of 21 - Disclaimer: Subject to change without notice
4 Maximum Gate Current Maximum Gate Current [ma] Maximum Gate Current Vs. Channel Temperature Channel Temperature [ C] Rev. A - 4 of 21 - Disclaimer: Subject to change without notice
5 Median Lifetime 1 Median Lifetime, T M (Hours) 1.00E E E E E E E E E E+ 1.00E E E E E+05 Median Lifetime vs. Channel Temperature Channel Temperature, T CH ( C) 1 For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle. Rev. A - 5 of 21 - Disclaimer: Subject to change without notice
6 Thermal and Reliability Information - Pulsed 2 TGF2929-HM Peak Channel Temperature Package base fixed at 85 C, Pdiss = 0 W 240 Peak Channel Temperature (oc) % Duty Cycle % Duty Cycle % Duty Cycle % Duty Cycle E E E E E E E+00 Pulse Width (sec) Parameter Conditions Values Units Thermal Resistance (θjc) 0.75 C/W 85 C Case Peak Channel Temperature (TCH) 1 C 0 W Pdiss, 0 us PW, 5% Median Lifetime (TM) 3.84E Hrs Thermal Resistance (θjc) 0.79 C/W 85 C Case Peak Channel Temperature (TCH) 164 C 0 W Pdiss, 0 us PW, % Median Lifetime (TM) 1.3E Hrs Thermal Resistance (θjc) 0.88 C/W 85 C Case Peak Channel Temperature (TCH) 173 C 0 W Pdiss, 0 us PW, % Median Lifetime (TM) 2.6E9 Hrs Thermal Resistance (θjc) 1.15 C/W 85 C Case Peak Channel Temperature (TCH) 0 C 0 W Pdiss, 0 us PW, % Median Lifetime (TM) 8.6E7 Hrs Rev. A - 6 of 21 - Disclaimer: Subject to change without notice
7 Thermal and Reliability Information - CW Maximum Channel Temperature [ C] Tch,max TGF2929-HM Maximum Channel Temperature vs. CW Power Package Base Fixed at 85 C 1E6 Hours Operating Limit CW Power Dissipation [W] Parameter Conditions Values Units Thermal Resistance (θjc) 0.87 C/W 85 C Case Maximum Channel Temperature (TCH) 125 C 28.8 W Pdiss, CW Median Lifetime (TM) 9.2E Hrs Thermal Resistance (θjc) 1.49 C/W 85 C Case Maximum Channel Temperature (TCH) 171 C 57.6 W Pdiss, CW Median Lifetime (TM) 6.3E8 Hrs Thermal Resistance (θjc) 1.62 C/W 85 C Case Maximum Channel Temperature (TCH) 225 C 86.4 W Pdiss, CW Median Lifetime (TM) 5.5E6 Hrs Thermal Resistance (θjc) 1.74 C/W 85 C Case Maximum Channel Temperature (TCH) 285 C W Pdiss, CW Median Lifetime (TM) 7.8E4 Hrs Rev. A - 7 of 21 - Disclaimer: Subject to change without notice
8 1, 2, 3 Load Pull Smith Charts V, 2 ma, Pulsed signal with 0 us pulse width and % duty cycle. Performance is at indicated input power. 2. See page 16 for load pull and source pull reference planes. 6-Ω load pull TRL fixtures are built with -mil RO43B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ Max Power is.9dbm at Z = iΩ Γ = i Max is 21.3dB at Z = iΩ Γ = i Max is 78.4% at Z = iΩ Γ = i Zo = 6Ω 3dB Compression Referenced to Peak.5 Power Rev. A - 8 of 21 - Disclaimer: Subject to change without notice
9 1, 2, 3 Load Pull Smith Charts V, 2 ma, Pulsed signal with 0 us pulse width and % duty cycle. Performance is at indicated input power. 2. See page 16 for load pull and source pull reference planes. 6-Ω load pull TRL fixtures are built with -mil RO43B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 2GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ Max Power is 51.2dBm at Z = iΩ Γ = i Max is 16.6dB at Z = iΩ Γ = i Max is 72.8% at Z = iΩ Γ = i Zo = 6Ω 3dB Compression Referenced to Peak Power Rev. A - 9 of 21 - Disclaimer: Subject to change without notice
10 1, 2, 3 Load Pull Smith Charts V, 2 ma, Pulsed signal with 0 us pulse width and % duty cycle. Performance is at indicated input power. 2. See page 16 for load pull and source pull reference planes. 6-Ω load pull TRL fixtures are built with -mil RO43B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 3GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ Max Power is.9dbm at Z = iΩ Γ = i Max is 14.4dB at Z = iΩ Γ = i Max is 64.4% at Z = iΩ Γ = i Power Zo = 6Ω 3dB Compression Referenced to Peak Rev. A - of 21 - Disclaimer: Subject to change without notice
11 1, 2, 3 Load Pull Smith Charts V, 2 ma, Pulsed signal with 0 us pulse width and % duty cycle. Performance is at indicated input power. 2. See page 16 for load pull and source pull reference planes. 6-Ω load pull TRL fixtures are built with -mil RO43B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 3.5GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ Max Power is.8dbm at Z = iΩ Γ = i Max is 14.5dB at Z = iΩ Γ = i Max is.6% at Z = iΩ Γ = i Zo = 6Ω 3dB Compression Referenced to Peak Power Rev. A - 11 of 21 - Disclaimer: Subject to change without notice
12 Typical Performance Load Pull Drive-up 1, 2 1. Pulsed signal with 0 us pulse width and % duty cycle, Vd = 28 V, Idq = 2 ma 2. See page 16 for load pull and source pull reference planes where the performance was measured. [db] TGF2929-HM - and vs. Output Power 1 GHz - Power Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Output Power [dbm] 0 40 [%] [db] TGF2929-HM - and vs. Output Power 1 GHz - Efficiency Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Output Power [dbm] 0 40 [%] [db] TGF2929-HM - and vs. Output Power 2 GHz - Power Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Output Power [dbm] 0 40 [%] [db] TGF2929-HM - and vs. Output Power 2 GHz - Efficiency Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Output Power [dbm] 0 40 [%] Rev. A - 12 of 21 - Disclaimer: Subject to change without notice
13 Typical Performance Load Pull Drive-up 1, 2 1. Pulsed signal with 0 us pulse width and % duty cycle, Vd = 28 V, Idq = 2 ma 2. See page 16 for load pull and source pull reference planes where the performance was measured. [db] TGF2929-HM - and vs. Output Power 3 GHz - Power Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Output Power [dbm] 0 40 [%] [db] TGF2929-HM - and vs. Output Power 3 GHz - Efficiency Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Output Power [dbm] 0 40 [%] [db] TGF2929-HM - and vs. Output Power 3.5 GHz - Power Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Output Power [dbm] 0 40 [%] [db] TGF2929-HM - and vs. Output Power 3.5 GHz - Efficiency Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Output Power [dbm] 0 40 [%] Rev. A - 13 of 21 - Disclaimer: Subject to change without notice
14 Power Driveup Performance Over Temperatures Of GHz EVB 1 1 Vd = 28 V, Idq = 2 ma, Pulse Width = 0 us, Duty Cycle = % P3dB [W] P3dB vs. Frequency vs. Temperature 1-40 C C 1 85 C Frequency [GHz] 3dB [%] dB vs. Frequency vs. Temperature -40 C 25 C 85 C Frequency [GHz] G3dB [db] G3dB vs. Frequency vs. Temperature -40 C 25 C 85 C Frequency [GHz] Rev. A - 14 of 21 - Disclaimer: Subject to change without notice
15 Power Driveup Performance At 25 C Of GHz EVB 1 TGF2929-HM 1 Vd = 28 V, Idq = 2 ma, Pulse Width = 0 us, Duty Cycle = % Power [W] Output Power and vs. 25 C 1 Power Frequency [GHz] [db] [%] vs. Frequency at 25 C Frequency [GHz] Rev. A - 15 of 21 - Disclaimer: Subject to change without notice
16 Pin Layout The TGF2929-HM will be marked with the TGF2929HM designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number, and the ZZZ is an auto-generated serial number. Pin Description Pin Symbol Description 1 VD / RF OUT Gate voltage / RF Input 2 VG / RF IN Drain voltage / RF Output 3 Flange Source to be connected to ground Rev. A - 16 of 21 - Disclaimer: Subject to change without notice
17 Mechanical Drawing 1 1. All dimensions are in inches. Otherwise noted, the tolerance is ±0.005 inches. Rev. A - 17 of 21 - Disclaimer: Subject to change without notice
18 Schematic Of GHz EVB Bias-up Procedure Bias-down Procedure 1. Set V G to -4 V. 1. Turn off RF signal. 2. Set I D current limit to 2 ma. 2. Turn off V D 3. Apply 28 V V D. 3. Wait 2 seconds to allow drain capacitor to discharge 4. Slowly adjust V G until I D is set to 2 ma. 4. Turn off V G 5. Set I D current limit to 7 A 6. Apply RF. Rev. A - 18 of 21 - Disclaimer: Subject to change without notice
19 PCB Layout Of GHz EVB Board material is RO43B 0.02 thickness with 1 oz copper cladding. Bill Of material Of GHz EVB Ref Des Value Description Manufacturer Part Number R1 1 kω 03 Resistor Vishay/Dale CRCW032RJNEA C1, C2 5.6 pf RF NPO 2VDC ± 0.1 pf Capacitor ATC 0S5R6BT C3 1.2 pf RF NPO 2VDC ± 0.1 pf Capacitor ATC 0S1R2BT L1 22 nh Inductor Coilcraft 05CS-2X-LB R2 Ω 03 Resistor Vishay/Dale CRCW03R0JNEA C4 uf Ceramic Capacitor Murata C1632X5R0J6M1AC L nh Inductor Coilcraft A04T_L C pf Ceramic Capacitor Murata C08BL242X-5UN-X0T C6 00 pf Ceramic Capacitor ATC 0B2JTXT C7 2 uf Electrolytic Capacitor United Chemi-Con EMVY0ADA221MJA0G C8 15 pf RF NPO 2VDC 5% Capacitor ATC 0S1JT2XT Rev. A - 19 of 21 - Disclaimer: Subject to change without notice
20 Recommended Solder Temperature Profile TGF2929-HM Rev. A - of 21 - Disclaimer: Subject to change without notice
21 Product Compliance Information ESD Sensitivity Ratings Caution! ESD Sensitive Device Solderability Compatible with lead free soldering processes, 2 C maximum reflow temperature. Package lead plating: NiAu ESD Rating ESD Rating: Value: Test: Standard: MSL Rating MSL Rating: Test: Standard: 1A 0 V Human Body Model (HBM) JEDEC Standard JESD22-A114 TBD 2 C convection reflow JEDEC Standard IPC/JEDEC J-STD-0 The use of no-clean solder to avoid washing after soldering is recommended. This part is compliant with EU 02/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@qorvo.com Fax: For technical questions and application information: info-networks@qorvo.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Rev. A - 21 of 21 - Disclaimer: Subject to change without notice
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TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -
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Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Functional Block Diagram Frequency Range: 2.5 to 6 GHz PSAT: 46.5 dbm @ PIN = 26dBm, CW PAE: 36% Small
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QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from
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TGA54-SM Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range:
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Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9.5-11.5 GHz Saturated Output Power: 39 dbm Small
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Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
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Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db
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.15 2.8 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the
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Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
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QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
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Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9 - Saturated Output Power: 39 dbm Small Signal
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TGM243-SM Applications Receiver front end building block Product Features QFN 7x7mm 22L Frequency Range: 4-2 GHz Input Power CW Survivability: 4 W Functional Block Diagram Gain: 17 db Noise Figure: 2 db
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Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
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Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with
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General Description Qorvo s QPA9 is a packaged, high-performance, low noise amplifier fabricated on Qorvo s production 9 nm phemt (QPHT9) process. Covering 7 GHz, the QPA9 provides db small signal gain
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Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM
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TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
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Product Description The TGL2767 SM is a packaged wideband voltagevariable attenuator using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from 2 31 GHz, the TGL2767 SM offers > 2 db of
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Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital Phase Shifter
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Product Description Qorvo s is a wideband high power MMIC amplifier fabricated on Qorvo s production.15um GaN on SiC process (QGaN15). The operates from 1 8 GHz and typically provides W saturated output
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Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
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Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio General Purpose Product Features Functional Block Diagram Frequency Range:.1-15 GHz 6-Bit Digital
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Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
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Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1
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17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and
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Product Description Qorvo s TGL2226 SM is a wideband, 6 bit digital attenuator fabricated using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from.1 15 GHz, the TGL2226 SM offers a low
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QPA8 Product Description Qorvo's QPA8 is an S-band two stage variable gain driver amplifier in a 5x5 mm QFN. The QPA8 operates from 2.7 to 3.8 GHz and provides 31dBm of P1dB output power with 26 db of
More informationApplications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier
Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return
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Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio Instrumentation General Purpose Product Features Functional Block Diagram Frequency Range: 2
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2.5 to 6GHz 4W GaN Power Amplifier Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Frequency Range: 2.5 to 6 GHz P SAT : 46.5 dbm @ PIN = 26dBm, CW PAE:
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TGP217-SM Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital
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Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram
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Product Description The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture
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Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 20 GHz 29.5 dbm Typical Output Power
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Applications General Purpose For IF applications Product Features Typical 1 db Bandwidth of 1.2 MHz Low loss High attenuation Single-ended operation Ceramic Surface Mount Package (SMP) Small Size Dimensions:
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General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
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