QPD1025L. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info
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- April Wade
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1 Product Overview The Qorvo is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations. Lead-free and ROHS compliant Evaluation boards are available upon request. 4-lead NI-1230 Package (Eared) Key Features Functional Block Diagram Frequency: 1.0 to 1.1 GHz Output Power (P3dB) 1 : 1862 W Linear 1 : 22.5 db Typical PAE3dB 1 : 77.2% Operating Voltage: 65 V CW and Pulse capable Note 1.0 GHz Load Pull Applications IFF Transponders Avionics Ordering info Part No. ECCN Description EAR GHz Transistor S2 EAR99 2 Piece Sample Bag EVB1 EAR GHz Evaluation Board Datasheet Rev. C Subject to change without notice - 1 of
2 Absolute Maximum Ratings 1, 2, 3 Parameter Rating Units Breakdown Voltage,BVDG 225 V Gate Voltage Range, VG -7 to +2 V Drain Current, IDMAX 142 A Gate Current Range, IG See pg. 12 ma Power Dissipation, Pulsed, PDISS W RF Input Power, Pulsed, PIN dbm Channel Temperature, TCH 275 C Mounting Temperature (30 Seconds) 3 C Storage Temperature 65 to +150 C 1. Operation of this device outside the parameter ranges given above may cause permanent damage 2. Pulsed, 1000us PW, % DC, Package base at 85 C 3. Pulsed, 100us PW, 10% DC, T = 25 C Recommended Operating Conditions 1, 2, 3, 4 Parameter Min Typ Max Units Operating Temp. Range C Drain Voltage Range, VD V Drain Bias Current, IDQ 1.5 A Drain Current, ID 4 28 A Gate Voltage, VG V Channel Temperature (TCH) 250 C Power Dissipation (PD) 2,4 685 W Power Dissipation (PD), CW W 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions 2. Package base at 85 C 3. To be adjusted to desired IDQ 4. Pulsed, 1000us PW, % DC Datasheet Rev. C Subject to change without notice - 2 of
3 Measured Load Pull Performance Power Tuned 65 V 1, 2 Parameter Typical Values Units Frequency, F GHz Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, % PAE3dB at 3dB compression, G3dB db 1. Test conditions unless otherwise noted: TA = 25 C, VD = 65 V, IDQ = 750 ma (half device) 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. Measured Load Pull Performance Efficiency Tuned 65 V 1, 2 Parameter Typical Values Units Frequency, F GHz Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, % PAE3dB at 3dB compression, G3dB db 1. Test conditions unless otherwise noted: TA = 25 C, VD = 65 V, IDQ = 750 ma (half device) 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. Measured Load Pull Performance Power Tuned 50 V 1, 2 Parameter Typical Values Units Frequency, F GHz Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, % PAE3dB at 3dB compression, G3dB db 1. Test conditions unless otherwise noted: TA = 25 C, VD = 50 V, IDQ = 750 ma (half device) 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. Measured Load Pull Performance Efficiency Tuned 50 V 1, 2 Parameter Typical Values Units Frequency, F GHz Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, % PAE3dB at 3dB compression, G3dB db 1. Test conditions unless otherwise noted: TA = 25 C, VD = 50 V, IDQ = 750 ma (half device) 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. Datasheet Rev. C Subject to change without notice - 3 of
4 RF Characterization GHz EVB Performance at 1.05 GHz 1 Parameter Min Typ Max Units Linear, GLIN 21.2 db Output Power at 3dB compression point, P3dB 1461 W Drain Efficiency at 3dB compression point, DEFF3dB 73.2 % at 3dB compression point, G3dB 18.2 db 1. VD = 65 V, IDQ = 1.5 A (combined), Temp = +25 C, Pulse Width = 100 us, Duty Cycle = 10% RF Characterization Mismatch Ruggedness at 1.0 GHz 1, 2, 3 Symbol Parameter db Compression Typical VSWR Impedance Mismatch Ruggedness 3 10:1 1. Test conditions unless otherwise noted: TA = 25 C, VD = 65 V, IDQ = 1.5 A (combined) 2. Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector 3. Pulse: 100us, 10% Duty cycle Datasheet Rev. C Subject to change without notice - 4 of
5 Measured Load-Pull Smith Charts 65 V 1, 2, 3 1. Test Conditions: VD = 65 V, IDQ = 750 ma, 100 us Pulse Width, 10% Duty Cycle, Temp = 25 C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 17 for load pull reference planes where the performance was measured. 4. 1GHz, Load-pull Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(2fo) = i Zl(3fo) = i Max Power is 59.7dBm at Z = i = i Max is 19.6dB at Z = i = i Max DEFF is 77.2% at Z = i = i Zo = 3 3dB Compression Referenced to Peak 16.6 Power DEFF Datasheet Rev. C Subject to change without notice - 5 of
6 Measured Load-Pull Smith Charts 65 V 1, 2, 3 1. Test Conditions: VD = 65 V, IDQ = 750 ma, 100 us Pulse Width, 10% Duty Cycle, Temp = 25 C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 17 for load pull reference planes where the performance was measured. 1.1GHz, Load-pull Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(2fo) = i Zl(3fo) = i Max Power is 59.7dBm at Z = i = i Max is 19dB at Z = i = i Max DEFF is 77% at Z = i 17.6 = i Zo = 3 3dB Compression Referenced to Peak Power DEFF Datasheet Rev. C Subject to change without notice - 6 of
7 Measured Load-Pull Smith Charts 50 V 1, 2, 3 1. Test Conditions: VD = 50 V, IDQ = 750 ma, 100 us Pulse Width, 10% Duty Cycle, Temp = 25 C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 17 for load pull reference planes where the performance was measured. 4. 1GHz, Load-pull Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(2fo) = i Zl(3fo) = i Max Power is 58.6dBm at Z = i = i Max is 18.9dB at Z = i = i Max DEFF is 75.8% at Z = i = i Zo = 3 3dB Compression Referenced to Peak 15.6 Power DEFF Datasheet Rev. C Subject to change without notice - 7 of
8 Measured Load-Pull Smith Charts 50 V 1, 2, 3 1. Test Conditions: VD = 50 V, IDQ = 750 ma, 100 us Pulse Width, 10% Duty Cycle, Temp = 25 C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 17 for load pull reference planes where the performance was measured. 1.1GHz, Load-pull Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(2fo) = 0.54 Zl(3fo) = i Max Power is 58.6dBm at Z = i = i Max is 18.6dB at Z = i = i Max DEFF is 77.7% at Z = i = i Zo = 3 3dB Compression Referenced to Peak 15.6 Power DEFF Datasheet Rev. C Subject to change without notice - 8 of
9 [db] PAE [%] [db] PAE [%] [db] PAE [%] [db] PAE [%] Typical Measured Performance Load-Pull Drive-up 65 V 1, 2 1. Test Conditions: VD = 65 V, IDQ = 750 ma, 100 us Pulse Width, 10% Duty Cycle, Temp = 25 C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 17 for load pull reference planes where the performance was measured Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(1fo) = i Zl(2fo) = i Zl(3fo) = i and PAE vs. Output Power 1 GHz - Power Tuned PAE Output Power [dbm] and PAE vs. Output Power 1 GHz - Efficiency Tuned Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(1fo) = i Zl(2fo) = i Zl(3fo) = i PAE Output Power [dbm] Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(1fo) = i Zl(2fo) = 0.63 Zl(3fo) = i and PAE vs. Output Power 1.1 GHz - Power Tuned PAE Output Power [dbm] and PAE vs. Output Power 1.1 GHz - Efficiency Tuned Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(1fo) = i Zl(2fo) = i Zl(3fo) = i PAE Output Power [dbm] Datasheet Rev. C Subject to change without notice - 9 of
10 [db] PAE [%] [db] PAE [%] [db] PAE [%] [db] PAE [%] Typical Measured Performance Load-Pull Drive-up 50 V 1, 2 1. Test Conditions: VD = 50 V, IDQ = 750 ma, 100 us Pulse Width, 10% Duty Cycle, Temp = 25 C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 17 for load pull reference planes where the performance was measured and PAE vs. Output Power 1 GHz - Power Tuned PAE Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(1fo) = i 14 Zl(2fo) = i Zl(3fo) = i Output Power [dbm] and PAE vs. Output Power 1 GHz - Efficiency Tuned Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(1fo) = i Zl(2fo) = i Zl(3fo) = i PAE Output Power [dbm] and PAE vs. Output Power 1.1 GHz - Power Tuned Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(1fo) = i Zl(2fo) = i Zl(3fo) = i PAE Output Power [dbm] Zs(1fo) = i Zs(2fo) = i Zs(3fo) = i Zl(1fo) = i Zl(2fo) = 0.53 Zl(3fo) = i and PAE vs. Output Power 1.1 GHz - Efficiency Tuned PAE Output Power [dbm] Datasheet Rev. C Subject to change without notice - 10 of
11 Power Driveup Performance over Temperatures of GHz EVB 1 1. Test Conditions: VD = 65 V, IDQ = 1.5 A, 100 us Pulse Width, 10% Duty Cycle. Datasheet Rev. C Subject to change without notice - 11 of
12 Power Driveup Performance at 25 C of GHz EVB 1 1. Test Conditions: VD = 65 V, IDQ = 1.5 A, 100 us Pulse Width, 10% Duty Cycle. Datasheet Rev. C Subject to change without notice - 12 of
13 1, 2, 3 Thermal and Reliability Information CW Parameter Conditions Values Units Thermal Resistance, FEA (θjc) (1) (3) 0.26 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) C Pdiss = W Median Lifetime, FEA (TM) (1) 4.0E10 CW Hrs Peak Channel Temperature, IR (2) 117 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.29 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) C Pdiss = W Median Lifetime, FEA (TM) (1) 1.0E8 CW Hrs Peak Channel Temperature, IR (2) 154 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.33 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) C Pdiss = W Median Lifetime, FEA (TM) (1) 4.0E5 CW Hrs Peak Channel Temperature, IR (2) 195 (2) C 1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal references are FEA. 2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability. 3. Thermal resistance measured to backside of package. Datasheet Rev. C Subject to change without notice - 13 of
14 1, 2, 3 Thermal and Reliability Information Pulsed Parameter Conditions Values Units Thermal Resistance, FEA (θjc) (1) (3) 0.12 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) 151 C Pdiss = 518 W Median Lifetime, FEA (TM) (1) 5.0E10 Pulse: 100 us PW, 10% DC Hrs Peak Channel Temperature, IR (2) 130 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.13 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) 177 C Pdiss = 691 W Median Lifetime, FEA (TM) (1) 3.0E9 Pulse: 100 us PW, 10% DC Hrs Peak Channel Temperature, IR (2) 147 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.14 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) 9 C Pdiss = 864 W Median Lifetime, FEA (TM) (1) 1.7E8 Pulse: 100 us PW, 10% DC Hrs Peak Channel Temperature, IR (2) 166 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.15 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) 239 C Pdiss = 1037 W Median Lifetime, FEA (TM) (1) 1.8E7 Pulse: 100 us PW, 10% DC Hrs Peak Channel Temperature, IR (2) 183 (2) C 1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal references are FEA. 2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability. 3. Thermal resistance measured to backside of package. Datasheet Rev. C Subject to change without notice - 14 of
15 Median Lifetime, T M (Hours) Median Lifetime 1, E E E E E E E E E E E E E E E+05 Median Lifetime vs. Channel Temperature Channel Temperature, T CH ( C) 1. Test Conditions: VD = +50 V; Failure Criteria = 10 % reduction in ID_MAX during DC Life Testing. 2. For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle. Datasheet Rev. C Subject to change without notice - 15 of
16 Maximum Gate Current Datasheet Rev. C Subject to change without notice - 16 of
17 Pin Configuration and Description 1 Note: 1- The will be marked with the designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number, and the ZZZ is an auto-generated serial number. Pin Symbol Description 1, 2 RF IN / VG Gate 3, 4 RF OUT / VD Drain 5 Source Source / Ground / Backside of part Datasheet Rev. C Subject to change without notice - 17 of
18 Mechanical Drawing 1 Note: 1- All dimensions are in inches. Dimension tolerance is ± in, unless noted otherwise. Datasheet Rev. C Subject to change without notice - 18 of
19 GHz Application Circuit - Schematic Bias-up Procedure Bias-down Procedure 1. Set V G to -5 V. 1. Turn off RF signal. 2. Set I D current limit to 4 A. 2. Turn off V D 3. Apply 65 V V D. 3. Wait 2 seconds to allow drain capacitor to discharge. 4. Slowly adjust V G until I D is set to 1.5 A. 4. Turn off V G 5. Apply RF. Datasheet Rev. C Subject to change without notice - 19 of
20 GHz Application Circuit Layout 1, 2 1. PCB material is RO4350B 0.0 thick, 2 oz. copper each side. 2. The two gates could be tied together or (optionally) adjusted independently GHz Application Circuit Bill of Material Reference Design Value Qty Manufacturer Part Number C15,C16,C17,C pf 4 American Technical Ceramics 600F8R2BT250T C1 10 pf 1 American Technical Ceramics 600S100FT250XT C2,C3,C4 6.8 PF 3 American Technical Ceramics 600S6R8BT250T C9,C uf 2 Murata Electronics GRM31CR71H475KA12L C19,C,C21,C pf 4 American Technical Ceramics 600F7R5BT250XT C26,C27 10 uf 2 TDK Singapore (Pte) Ltd C5750X7S2A106M230KB C5,C6,C7,C8 9.1 pf 4 American Technical Ceramics 600S9R1BT250XT C28,C uf 2 Vishay Americas Inc MAL E3 C11,C12,C13,C pf 4 American Technical Ceramics 600F6R8BT250XT C23,C pf 2 American Technical Ceramics 800B3R0BT500XT R1 100 Ohm 1 Panasonic Industrial Devices ERJ-3EKF1000 R2,R3 10 Ohm 2 Vishay Dale Sales Electronics CRCW060310R0FKEA L1,L2 110 nh 2 Coilcraft, Inc. 0805CS-111XJBC Connectors N-Type 2 Huber+Suhner, Inc Datasheet Rev. C Subject to change without notice - of
21 Recommended Solder Temperature Profile Datasheet Rev. C Subject to change without notice - 21 of
22 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1C JEDEC JS-001 ESD Charged Device Model (CDM) Class C3 JEDEC JS-002 MSL Moisture Sensitivity Level Solderability MSL3 JESD J-STD-0 (260 C Convection reflow) Caution! ESD-Sensitive Device Compatible with both lead-free (260 C max. reflow temp.) and tin/lead (245 C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: NiAu RoHS Compliance This part is compliant with 11/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 15/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@qorvo.com Fax: For technical questions and application information: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 18 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Datasheet Rev. C Subject to change without notice - 22 of
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2 to, W GaN Power Amplifier Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal
More informationTGF Watt Discrete Power GaN on SiC HEMT
Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 1 GHz 3 dbm Nominal P3dB at 6 GHz 62.5% Maximum 1.4 db Linear at 6 GHz Bias: VD = - V,
More informationTGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output
More informationQPD W, 48 V GHz GaN RF Power Transistor
Applications W-CDMA / LTE Macrocell Base Station, Band 1 and Band 3 Active Antenna General Purpose Applications 2 Lead NI400 Package Product Features Functional Block Diagram Operating Frequency Range:
More informationT2G Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor
Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
More informationTGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
More informationQPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
More informationTGA2818-SM S-Band 30 W GaN Power Amplifier
S-Band 3 W GaN Power Amplifier Applications Military Radar Civilian Radar Wideband Amplifiers Product Features Functional Block Diagram Frequency Range: 2.8-3.7 GHz Pout: >.5 dbm (Pin=27 dbm) Large Signal
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QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
More informationTGF Watt Discrete Power GaN on SiC HEMT
Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - GHz 41.2 dbm Nominal PSAT at 6 GHz 63.4% Maximum at 6 GHz db Linear at 6 GHz Bias: VD
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Product Description Qorvo s TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo s QGaN15 0.15 µm GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214- CP generates > 4 W saturated
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Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM
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Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
More informationTGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
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Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Functional Block Diagram Frequency Range: 2.5 to 6 GHz PSAT: 46.5 dbm @ PIN = 26dBm, CW PAE: 36% Small
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Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %)
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Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with
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17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and
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Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
More informationTGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information
Product Description The TGL2767 SM is a packaged wideband voltagevariable attenuator using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from 2 31 GHz, the TGL2767 SM offers > 2 db of
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Product Description Qorvo s is a wideband high power MMIC amplifier fabricated on Qorvo s production.15um GaN on SiC process (QGaN15). The operates from 1 8 GHz and typically provides W saturated output
More informationTGA3503-SM 2-30 GHz GaAs Wideband Gain Block
Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range: 2 3 GHz
More informationTGL2226-SM GHz 6-Bit Digital Attenuator
Product Description Qorvo s TGL2226 SM is a wideband, 6 bit digital attenuator fabricated using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from.1 15 GHz, the TGL2226 SM offers a low
More informationTGF Watt Discrete Power GaN on SiC HEMT
Applications Marine radar Satellite communications Point to point communications Military communications Broadband amplifiers High efficiency amplifiers Product Features Functional Block Diagram Frequency
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TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -
More informationQPA GHz Variable Gain Driver Amplifier
QPA8 Product Description Qorvo's QPA8 is an S-band two stage variable gain driver amplifier in a 5x5 mm QFN. The QPA8 operates from 2.7 to 3.8 GHz and provides 31dBm of P1dB output power with 26 db of
More informationTGA3504-SM 2-30 GHz GaAs Wideband Gain Block
TGA54-SM Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range:
More informationQPA W, 28 V, GHz GaN PA Module
Product Description The QPA2705 is an integrated 2-stage Power Amplifier Module designed for Metro Cell Base Station applications with 5 W RMS at the device output. The module is 50 Ω input and output
More informationQPA W, 28 V, GHz GaN PA Module
Product Description The QPA3503 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 3 W RMS at the device output covering frequency range from 3.4 to 3.6 GHz. The
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9 1 GHz W GaN Power Amplifier Applications Weather and Marine Radar Product Features Frequency Range: 9 1 GHz PSAT:.5 dbm @ PIN = 18 dbm PAE: >% @ PIN = 18 dbm Power Gain: 27.5 db @ PIN = 18 dbm Bias:
More informationTGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db
More informationQPC GHz 6-Bit Digital Phase Shifter
Product Description The Qorvo is a packaged 6-bit digital phase shifter fabricated on Qorvo s high performance.15 um GaAs phemt process. It operates over 2.5-4 GHz while providing 36 of phase coverage
More informationTGA2710-SM 8W GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9.5-11.5 GHz Saturated Output Power: 39 dbm Small
More informationTGA2704-SM 8W 9-11 GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9 - Saturated Output Power: 39 dbm Small Signal
More informationTGM2543-SM 4-20 GHz Limiter/LNA
TGM243-SM Applications Receiver front end building block Product Features QFN 7x7mm 22L Frequency Range: 4-2 GHz Input Power CW Survivability: 4 W Functional Block Diagram Gain: 17 db Noise Figure: 2 db
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Applications General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features Frequency: DC to 6 GHz
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QPL965 Product Description The QPL965 is a high-linearity, ultra-low noise 2-stage gain block amplifier module with a bypass mode functionality integrated to the second stage in the product. At 1.95 GHz,
More informationQPD W, DC to 3.6 GHz 48 V GaN RF Power Transistor
Product Description The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture
More informationTGA4533-SM K-Band Power Amplifier
Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
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Product Overview The is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvo s E-pHEMT process, this amplifier delivers exceptional performance
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QPA119 4.5 7. GHz 1 W GaN Power Amplifier Product Overview Qorvo s QPA119 is a packaged high-power, C-band amplifier fabricated on Qorvo s production.15 um GaN on SiC process (QGaN15). Covering 4.5 7.
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TGA Product Description The TriQuint TGA is an optical modulator linear driver amplifier designed for the CFPx 1 Gb/s optical markets. The TGA has 12 db of gain and 1. Vpp output power and High BW of 5
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Product Description The TriQuint TGA4852 is a medium power wideband AGC MMIC. Drain bias may be applied through the output port for best efficiency or through the on-chip drain termination. RF ports are
More informationQPL9096 Ultra Low-Noise, Bypass LNA
General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
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More informationApplications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier
Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return
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Product Overview The is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications up to 3 W RMS at the device output covering frequency range from 4.4 to 5.0 GHz. The module is
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Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital Phase Shifter
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2.5 to 6GHz 4W GaN Power Amplifier Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Frequency Range: 2.5 to 6 GHz P SAT : 46.5 dbm @ PIN = 26dBm, CW PAE:
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General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 2.6 db gain, +36 dbm OIP3, and 1.3 db Noise
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Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio General Purpose Product Features Functional Block Diagram Frequency Range:.1-15 GHz 6-Bit Digital
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Product Overview The is a low-cost RF amplifier designed for applications from 47 to 1218 MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers
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General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
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General Description The is a 1 W, linear, two-stage driver amplifier in a low-cost surface-mount package. The amplifier is able to achieve high performance with +42 dbm OIP3 and +30.4 dbm P1dB while only
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GND RFout / 2 Vtune TGV2561-SM Applications Point to Point Radio / VSAT Millimeter-wave Communications Test Equipment 32-pin 5x5mm package Product Features Functional Block Diagram Frequency range: 8.9
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Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1
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QPM21 Product Description The QPM21 is a GaAs multi chip module (MCM) designed for S-Band radar applications within the 2.5-4. GHz range. The device consists of a T/R switch, a transmit path which is a
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Product Description The is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 19 db gain, +31.7 dbm OIP3,
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General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 14.7 db gain, + dbm OIP3, and 1.8 db Noise
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Product Overview The is a single-pole double-throw (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the
More informationQPB9325SR. High Power Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The Qorvo is a highly integrated front-end module targeted for TDD macro or picocell base stations. The switch module integrates RF functional blocks such as a pin-diode based high power
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