12.5W CW, MHz Power Transistor

Transcription

1 Preliminary Specification 12.5W CW, 2-3MHz Power Transistor FEATURES Frequency: 2-3MHz 8Mhz: 17dB 8MHz: 42dBm Psat: 8MHz 28V Operation DESCRIPTION The is a broadband capable 12.5W GaN on Silicon power transistor covering 2MHz to 3GHz frequency bands for power amplifier applications. The input and output can be matched on board for best power and efficiency for the desired band. APPLICATIONS Land Mobile Radios Military Radios Cellular Infrastructure TUNED DEMO BOARDS 1.8G 2.7GHz 1-1MHz 2-525MHz The is packaged in a compact, low cost Quad Flat No lead (QFN) 3x6mm, 32 leads plastic package Figure 1: Functional Block Diagram (top view) 16 ORDERING INFORMATION Base Part Number Package Type Form Standard Pack Quantity Orderable Part Number QFN 3 mm x 6 mm Tape and Reel 3 MTRPBF Tagore Technology Rev1.6

2 Preliminary Specification PIN DESCRIPTION PIN NUMBER PIN NAME DESCRIPTION 1, 2, 3, 9, 1, 11, 12, 13, 14, 15, 16, 17, 18, 19, 25, 26, 27, 28, 29, 3, 31, 32 NC Not Connected 4, 5, 6, 7, 8 Vgg & RFin Gate Voltage and RF Input 2, 21, 22, 23, 24 Vdd & RFout Drain Voltage and RF Output 33 1 Paddle/Slug Ground Note 1: Backside ground slug of the package must be grounded directly to the ground plane through multiple vias to ensure proper operation ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNITS Breakdown Voltage VDS +1 V Gate Source Voltage Range VGS -7 to +1.5 V Drain Current IDS 2. A Gate Current IGS 12. ma Power dissipation 25degC Pdiss 25. W RF Input Power CW, 25degC, 8MHz RFin 28 dbm Junction Temperature Tj 175 C Storage temperature Range T st -4 to +15 C Operating Temperature Range T op -4 to +85 C Exceeding one or a combination of the Absolute Maximum Ratings conditions may cause permanent damage to the device RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL Min Typ Max UNITS Drain Voltage Vd V Gate Voltage Vgg V Drain Bias Current Idq 8 ma Drain Current Id 9 ma Power dissipation CW 2 Pdiss 18. W Operating Temperature Range T op C Note 2: Package base at 85deg C Tagore Technology Rev1.6

3 Preliminary Specification THERMAL CHARACTERISTICS PARAMETER Test Condition Symbol Typ UNITS Thermal Resistance Vd = 28V, Tj = 175 degc θ JC 5 C/W RF Electrical Specifications Data taken on 1-1MHz Broadband Reference Design, Vdd = 28V, Idq = 8mA, CW, Room Temp PARAMETER Test Conditions Min Typ Max UNITS Small Signal Gain (Gss) 8MHz 17 db Large Signal Gain Pout = 41dBm, 8MHz 16 db Psat 8MHz 42. dbm Power Added Efficiency (PAE) Pout = 41dBm 52 % Drain Voltage Vdd Ruggedness All phase, Pout = 41dBm VSWR = 1: Tagore Technology Rev1.6

4 Gain [db] Drain Efficiency [%] Gain [db] Drain Efficiency [%] Preliminary Specification Power Drive-Up of 1 1MHz EVB Note: Vd = 28V, Idq = 8mA (Vg = -3.1V), CW, Room Temp GAIN 1 MHz GAIN 2 MHz GAIN 3 MHz GAIN 4 MHz GAIN 5 MHz EFF 1 MHz EFF 2 MHz EFF 3 MHz EFF 4 MHz EFF 5 MHz Total Pout [dbm] Figure 2: Gain and Efficiency vs Pout (1 5MHz) GAIN 6 MHz GAIN 7 MHz GAIN 8 MHz GAIN 9 MHz GAIN 1 MHz EFF 6 MHz EFF 7 MHz EFF 8 MHz 14 2 EFF 9 MHz EFF 1 MHz Total Pout [dbm] 1 Figure 3: Gain and Efficiency vs Pout (6 1MHz) Tagore Technology Rev1.6

5 2nd Harmonic [dbc] 3rd Harmonic [dbc] 2nd Harmonic [dbc] 3rd Harmonic [dbc] Preliminary Specification Power Drive-Up of 1 1MHz EVB Note: Vd = 28V, Idq = 8mA (Vg = -3.1V), CW, Room Temp H2 1 MHz H2 2 MHz -5-5 H2 3 MHz -1-1 H2 4 MHz H2 5 MHz -2-2 H3 1 MHz H3 2 MHz H3 3 MHz -3-3 H3 4 MHz H3 5 MHz Total Pout [dbm] Figure 4: 2 nd, 3 rd Harmonic vs Pout (1 5MHz) H2 6 MHz H2 7 MHz -1-1 H2 8 MHz -2-2 H2 9 MHz -3-3 H2 1 MHz -4-4 H3 6 MHz -5-5 H3 7 MHz -6-6 H3 8 MHz -7-7 H3 9 MHz -8-8 H3 1 MHz Total Pout [dbm] Figure 5: 2 nd, 3 rd Harmonic vs Pout (6 1MHz) Tagore Technology Rev1.6

6 Power Dissipation [W] Power Dissipation [W] Preliminary Specification Power Drive-Up of 1 1MHz EVB Note: Vd = 28V, Idq = 8mA (Vg = -3.1V), CW, Room Temp Pdiss 1 MHz Pdiss 2 MHz Pdiss 3 MHz Pdiss 4 MHz Pdiss 5 MHz Total Pout [dbm] Figure 6: Pdiss vs Pout (1 5MHz) Pdiss 6 MHz 14 Pdiss 7 MHz 12 1 Pdiss 8 MHz Pdiss 9 MHz Pdiss 1 MHz Total Pout [dbm] Figure 7: Pdiss vs Pout (6 1MHz) Tagore Technology Rev1.6

7 IMD 5[dBc] IMD3 [dbc] Preliminary Specification Typical Two Tone Power Drive-Up of 1 1MHz EVB Note: Vd = 28V, Idq = 8mA and 13mA, 45MHz, CW, Room Temp Lower IM3, 8 ma Upper IM3, 8mA Lower IM3, 13 ma Upper IM3, 13 ma "PEP" Output (Pavg + 3) [dbm] Figure 8: IMD3 vs PEP at 45MHz Lower IM5, 8 ma Upper IM5, 8mA Lower IM5, 13 ma Upper IM5, 13 ma "PEP" Output (Pavg + 3) [dbm] Figure 9: IMD5 vs PEP at 45MHz Tagore Technology Rev1.6

8 Gain [db] Drain Efficiency [%] Gain [db] Drain Efficiency [%] Preliminary Specification Power Drive-Up of 2 525MHz EVB Note: Vd = 28 & 32V, Idq = 8mA (Vg = -3.1V), CW, Room Temp GAIN 2MHz 28V GAIN 5MHz 28V GAIN 1MHz 28V GAIN 2MHz 28V GAIN 3MHz 28V GAIN 4MHz 28V GAIN 5MHz 28V GAIN 525MHz 28V EFF 2 MHz 28V EFF 5MHz 28V EFF 1MHz 28V EFF 2MHz 28V EFF 3MHz 28V EFF 4MHz 28V EFF 5MHz 28V EFF 525MHz 28V Total Pout [dbm] Figure 1: Gain and Efficiency vs Pout at 28V Vd GAIN 2MHz 32V GAIN 5MHz 32V GAIN 1MHz 32V GAIN 2MHz 32V GAIN 3MHz 32V 19 6 GAIN 4MHz 32V GAIN 5MHz 32V 18 5 GAIN 525MHz 32V EFF 2MHz 32V EFF 5MHz 32V EFF 1MHz 32V EFF 2MHz 32V 15 2 EFF 3MHz 32V EFF 4MHz 32V EFF 5MHz 32V EFF 525MHz 32V Total Pout [dbm] 1 Figure 11: Gain and Efficiency vs Pout at 32V Vd Tagore Technology Rev1.6

9 Gain [db] Drain Efficiency [%] (db) Preliminary Specification Typical Characteristics of GHz EVB Note: Vd = 28V, Idq = 1mA (Vg = -3.8V), CW, Room Temp 2 15 Gain ORL -1 IRL Frequency (MHz) Figure 12: S-parameter data Note: Vd = 28V, Idq = 1mA (Vg = -3.8V), LTE (PAPR = 9.5dB), 1MHz BW, Room Temp GHz Avg. Gain 2.3 GHz Avg. Gain 2.7 GHz Avg. Gain 1.8 GHz Avg. Eff 2.3 GHz Avg. Eff 2.7 GHz Avg. Eff Total Average Pout[dBm] Figure 13: Gain and Efficiency vs Pout Tagore Technology Rev1.6

10 AACPR (+/-2 MHZ) [dbc] ACPR (+/- 1 MHz) [dbc] Preliminary Specification Lower ACPR, 1.8 GHz Upper ACPR, 1.8 GHz Lower ACPR, 2.3 GHz Upper ACPR, 2.3 GHz Lower ACPR, 2.7 GHz Upper ACPR, 2.7 GHz Total Average Pout[dBm] Lower AACPR, 1.8 GHz Upper AACPR, 1.8 GHz Lower AACPR, 2.3 GHz Upper AACPR, 2.3 GHz Lower AACPR, 2.7 GHz Upper AACPR, 2.7 GHz Total Average Pout[dBm] Figure 14: ACPR/AACPR vs Pout Tagore Technology Rev1.6

11 Preliminary Specification Bias and Sequencing Turn ON Device 1. Set Vg to -5V. 2. Set Vd to +28V. 3. Adjust Vg to achieve Idq current. 4. Apply RF power Turn OFF Device 1. Turn RF power off. 2. Turn off Vd 3. Turn off Vg Tagore Technology Rev1.6

12 Preliminary Specification Schematic of EVB Tuned for 1 1MHz VDD Vgg 28V -v e D1 C3.1uF L2 C5 1uF C4.1uF RF IN C1 4.7nF L1 3.3nH C2 4.7pF R1 5ohm 3.3nH R2 5ohm R3 33ohm PA L3 68nH L4 3.9nH C7 3.9pF C6 3.9pF L5 6nH C8 3.3pF C9 4.7nF RF OUT D1 Part List Reference Value Manufacturer Part/Series C1, C9 4.7nF, 5V Murata GRM18 Series C2 4.7pF ATC 6S4R7CT25XT L1 3.3nH Coilcraft 63HP-3N3XGLW L2 3.3nH Coilcraft 42CS-3N3XGLW L3 68nH Coilcraft PFL ME L4 3.9nH Coilcraft 63HC-3N9XJLW L5 6nH Coilcraft 63HP-6NXGLW C3.1uF, 1V AVX 63YC14K4Z2A C4.1uF, 5V Murata GRM31C5C1H14JA1K C5 1uF Nichicon UPW1J11MPD1TD C6, C7 3.9pF ATC 6S3R9CT25XT C8 3.3pF ATC 6S3R3CT25XT R1 5.1 ohms Panasonic ERJ-3RQF5R1V R2 51 ohms 25 mw Panasonic ERJ-PA3F51RV R3 33 ohms 25 mw Panasonic ERJ-PA3F33RV D1 7.5 V Zener On Semiconductor MMSZ5236BT 1G PCB Rogers RO435B, 2 mils, 2 ounce copper Figure 15: Schematic of 1-1MHz EVB Tagore Technology Rev1.6

13 Preliminary Specification Schematic of EVB Tuned for 2 525MHz VDD Vgg -v e D1 C5 1uF C3 C4 RF IN C1 2.2nF C1 2.2nF L1 4.3nH C2 4.7pF R1.1uF 5ohm L2 4.3nH R2 5ohm R3 33ohm.1uF PA L3 68nH L4 6.8nH C6 6.8pF L5 6.8nH C8 3.9pF C9 2.2nF C11 2.2nF RF OUT Vgg Vdd D1 C5 C1 L1 C3 R2,R3 L2 L3 C4 L5 C9 C2 R1 L4 C6 C8 Part List Reference Value Manufacturer Part/Series C1, C9 4.7nF, 5V Murata GRM18 Series C2 4.7pF ATC 6S4R7CT25XT L1 4.3nH Coilcraft 63HP-4N3XGLW L2 4.3nH Coilcraft 42CS-4N3XGLW L3 68nH Coilcraft PFL ME L4 6.8nH Coilcraft 63HP-6N8XJLW L5 6.8nH Coilcraft 63HP-6N8XJLW C3.1uF, 1V AVX 63YC14K4Z2A C4.1uF, 5V Murata GRM31C5C1H14JA1K C5 1uF Nichicon UPW1J11MPD1TD C6 6.8pF ATC 6S6R8JT25XT C8 3.9pF ATC 6S3R9CT25XT R1 5.1 ohms Panasonic ERJ-3RQF5R1V R2 51 ohms 25 mw Panasonic ERJ-PA3F51RV R3 33 ohms 25 mw Panasonic ERJ-PA3F33RV D1 7.5 V Zener On Semiconductor MMSZ5236BT 1G PCB Rogers RO435B, 2 mils, 2 ounce copper Figure 16: Schematic of 2-525MHz EVB Tagore Technology Rev1.6

14 Preliminary Specification Schematic of EVB Tuned for GHz VDD 28V C26 Vgg 1uF C21 -v e D11 C15.1uF R21 5.1ohm L22 22nH.1uF C22 RF IN C11 4.7nF L11 1.nH C12 1.5pF C14 2.2pF C13 2.4pF R11 33ohm 33pF Q1 L21 1.6nH L23.8nH C23.7pF C24.7pF C25 4.7nF RF OUT Figure 17: Schematic of GHz EVB Tagore Technology Rev1.6

15 Part List Reference Value Manufacturer Part/Series C11, C25 4.7nF, 5V Murata GRM1885C1H472JA1D C12 1.5pF ATC 6S1R5BT25XT L11 1.nH Coilcraft 42HP-1NXJLW C13 2.4pF ATC 6S2R4BT25XT C14 2.2pF ATC 6S2R2BT25XT L21 1.6nH Coilcraft 63HC-1N6XJLW L22 22nH Coilcraft 63HC-22NXJLW L23.8nH Coilcraft 42PA-N8XJLW C22 33pF ATC 6S33JT25XT C15.1uF, 16V AVX 63YC14K4Z2A C21.1uF, 5V Murata GRM31C5C1H14JA1L C26 1uF Nichicon UPW1J11MPD1TD C23,24.7pF ATC 6SR7BT25XT R11 33 ohms 25 mw Panasonic ERJ-PA3F33RV R ohms 25 mw Panasonic ERJ-PA3J5R1V Q1 Tagore Technology D V Zener On Semiconductor MMSZ5236BT 1G PCB Rogers RO435B, 2 mils, 2 ounce copper Tagore Technology Rev1.6

16 PACKAGE INFORMATION Figure 18: Package drawings Tagore Technology Rev1.6

17 Preliminary Specification QUALIFICATION INFORMATION Qualification Level Consumer Moisture Sensitivity Level 3x6 QFN MSL1 Human Body Model Charged Device Model TBD NA RoHS Compliant Yes The information provided in this document is believed to be accurate and reliable. However, Tagore Technology assumes no responsibility for the consequences of the use of this information. Tagore Technology assumes no responsibility for any infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any patent or patent rights of Tagore Technology. The specifications mentioned in this document are subject to change without notice. This document supersedes and replaces all information previously supplied. For technical support, please contact Tagore Technology WORLD HEADQUARTERS: 5 East College Dr. Suite 2, Arlington Heights, IL Tagore Technology Rev1.6