Advance Datasheet Revision: April 2015
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1 APN 1-1 GHz Advance Datasheet Revision: April Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios VSAT Test Instrumentation X = 3 um Y = 3 um Product Features RF frequency: 1 to 1 GHz Linear Gain: 13 db typ. P1dB: 39 dbm typ Psat: dbm typ. Psat: 37% typ. Die Size: 1. sq. mm..um GaN HEMT Process Product Description The APN monolithic GaN HEMT amplifier is a broadband, balanced Single Stage power device, designed for use in SATCOM Terminals and point-to-point digital radios. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Au-based that is compatible with epoxy and eutectic die attach methods. mil SiC substrate DC Power: 1 ma Performance Characteristics (Ta = C) Specification Min Typ Max Unit Frequency 1 1 GHz Linear Gain 1 13 db Input Return Loss db Output Return Loss db P1dB (Pulsed) 39 dbm Psat (Pulsed). dbm Psat 37 % Pin=3 dbm 9. db Vd1=Vd1a V Vg, Vg1a -3. V Id1 ma Id1a ma Absolute Maximum Ratings (Ta = C) Parameter Min Max Unit Vd1=Vd1a 1 V Id1, Id1a ma Vg1, Vg1a - V Input drive level TBD dbm Assy. Temperature 3 deg. C (TBD seconds) 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) as-mps.sales@ngc.com Page 1
2 Input Return Loss (db) Output Return Loss (db) Pout (dbm),, PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured On-Wafer Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id1, Id1a = ma* Linear Gain vs. Frequency Power**, Gain, PAE% vs. Frequency Linear Pin= dbm PGain@Pin=3dBm (db) P1dB (dbm) Psat (dbm) PSat Max PAE% Input Return Loss vs. Frequency Output Return Loss vs. Frequency * Pulsed-Power On-Wafer 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) as-mps.sales@ngc.com Page
3 Id1 (ma) Pout (dbm),, PAE% Pout (dbm) PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured On-Wafer Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id1, Id1a = ma* Pout & Gain Vs. vs. Pin PAE% vs. Pin 1 Gain Pout Gain 1 GHz Gain 11 GHz 1 Gain 1 GHz Gain 13 GHz Pout 1 GHz Pout 11 GHz Pout 1 GHz Pout 13 GHz GHz 11 GHz 1 GHz 13 GHz Id vs. Pin Pout, Gain & PAE% vs. Frequency Id1 1 GHz Id1 11 GHz Id1 1 GHz Id1 13 GHz Linear Pin= dbm PGain@Pin=3dBm (db) P1dB (dbm) Psat (dbm) PSat Max PAE% * On-Wafer Pulsed-Power 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) as-mps.sales@ngc.com Page 3
4 Id (ma) Power (dbm), Gain (db), PAE% Power (dbm) PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured Fixtured Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id = Id1+Id1a = 1 ma* Pout, Gain vs. Pin PAE% vs. Pin GHz 11GHz 1GHz 13GHz 1GHz 1GHz 11GHz 1GHz 13GHz 1GHz GHz 11GHz 1GHz 13GHz 1GHz 1 3 Pin (dbm) Id vs. Pin Pout, Gain & PAE% vs. Frequency GHz 11GHz 1GHz 13GHz 1GHz Pin=dBm P1dB (dbm) P3dB (dbm) P3dB PAE% Max * CW Fixture 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) as-mps.sales@ngc.com Page
5 Id (ma) Power (dbm), Gain (db), PAE% Power (dbm) PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured Fixtured Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id = Id1+Id1a = 1 ma* Pout, Gain vs. Pin PAE% vs. Pin GHz 11GHz 1GHz 13GHz 1GHz 1GHz 11GHz 1GHz 13GHz 1GHz GHz 11GHz 1GHz 13GHz 1GHz 1 3 Id vs. Pin Pout, Gain & PAE% vs. Frequency GHz 11GHz 1GHz 13GHz 1GHz Pin=dBm P1dB (dbm) P3dB (dbm) P3dB PAE% Max * CW Fixture 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) as-mps.sales@ngc.com Page
6 Id (ma) Power (dbm), Gain (db), PAE% Power (dbm) PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured Fixture Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id = Id1+Id1a = 1 ma* Pout, Gain vs. Pin PAE% vs. Pin GHz 11GHz 1GHz 13GHz 1GHz 1GHz 11GHz 1GHz 13GHz 1GHz GHz 11GHz 1GHz 13GHz 1GHz 1 3 Id vs. Pin Pout, Gain & PAE% vs. Frequency GHz 11GHz 1GHz 13GHz 1GHz Pin=dBm P1dB (dbm) P3dB (dbm) P3dB PAE% Max * CW Fixture 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) as-mps.sales@ngc.com Page
7 APN 1-1 GHz Advance Datasheet Revision: April Measured On-Wafer Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id1, Id1a = ma* Freq GHz S11 Mag S11 Ang S1 Mag S1 Ang S1 Mag S1 Ang S Mag S Ang * Pulsed-Power On-Wafer 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) as-mps.sales@ngc.com Page 7
8 VD1A APN 1-1 GHz Advance Datasheet Revision: April Die Size and Bond Pad Locations (Not to Scale) X = 3 µm Y = 3 µm DC Bond Pad = 1 x 1. µm RF Bond Pad = 1 x 1. µm Chip Thickness = 11 µm 17 µm 13 µm RFIN VG1A VG1 VD1 3 µm 3 µm RFOUT 1 µm 13 µm 17 µm 3 µm Biasing/De-Biasing Details: APN should be biased the top and bottom of the die. For best performance each side should be biased up separately, but they can be tied together. Listed below are some guidelines for GaN device testing and wire bonding: a. Limit positive gate bias (G-S or G-D) to < 1V b. Know your devices breakdown voltages c. Use a power supply with both voltage and current limit. d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to your test fixture. i. Apply negative gate voltage (- V) to ensure that all devices are off ii. Ramp up drain bias to ~1 V iii. Gradually increase gate bias voltage while monitoring drain current until % of the operating current is achieved iv. Ramp up drain to operating bias v. Gradually increase gate bias voltage while monitoring drain current until the operating current is achieved e. Repeat bias procedure for each amplifier stage f. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable): i. Gradually decrease drain bias to V. ii. Gradually decrease gate bias to V. iii. Turn off supply voltages g. Repeat de-bias procedure for each amplifier stage 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) as-mps.sales@ngc.com Page
9 VD1A VD1 APN 1-1 GHz Advance Datasheet Revision: April Suggested Bonding Arrangement [] =.1uF, V (Shunt) [] VG1 VD1 =.1uF, V (Shunt) = 1 pf, V (Shunt) =.1uF, V (Shunt) =.1uF, V (Shunt) = 1 Ohms, 3V (Series) RF Input RFIN VG1A VG1 = 1 pf, V (Shunt) RFOUT RF Output Substrate Substrate Note: APN must be biased from the top and bottom bias pads. VG1a [] VD1a Recommended Assembly Notes 1. Bypass caps should be 1 pf (approximately) ceramic (single-layer) placed no farther than 3 mils from the amplifier.. Best performance obtained from use of <1 mil (long) by 3 by. mil ribbons on input and output. 3. Part must be biased from both sides as indicated.. The.1uF, V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be used, do NOT use the.1uf, V Capacitors. Mounting Processes Most Northrop Grumman Aerospace Systems (NGAS) GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum recommended temp during die attach is 3 o C for 3 seconds. Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up tool. CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS. PLEASE ALSO REFER TO OUR GaN Chip Handling Application Note BEFORE HANDLING, ASSEMBLING OR BIASING THESE MMICS! 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) as-mps.sales@ngc.com Page 9 Approved for Public Release: Northrop Grumman Case -7, /9/
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v3.13 HMC9 Typical Applications The HMC9 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Noise
More informationFeatures. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]
v2.211 HMC949 Typical Applications The HMC949 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Features Saturated Output Power: +5.5 dbm
More informationMMA GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vds=5V Psat: 19.5 dbm @ Gain: 14 db Vdd =3 to 6 V Ids = 13 ma Input and Output Fully Matched to 5 Ω Applications: Communication systems Microwave instrumentations
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AMT217511 Rev. 1. January 28 2 4 GHz Ultra-Wideband Amplifier Features Frequency Range: 2-4 GHz 7±1. db Nominal Gain Input Return Loss > 1 db Output Return Loss > 1 db Reverse Isolation > 3dB 5 dbm Nominal
More informationFeatures OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma
v.1111 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram P1dB Output Power: + dbm Psat Output Power: +
More informationFeatures. = +25 C, Vdd= +5V, Idd = 66mA
Typical Applications This HMC-ALH369 is ideal for: Features Excellent Noise Figure: 2 db Point-to-Point Radios Point-to-Multi-Point Radios Phased Arrays VSAT SATCOM Functional Diagram Gain: 22 db P1dB
More informationFeatures. = +25 C, Vdd = +6V, Idd = 375mA [1]
v.119 HMC86 POWER AMPLIFIER, 24 -.5 GHz Typical Applications The HMC86 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Saturated Output
More informationFeatures dbm
v9.917 HMC441 Typical Applications Features The HMC441 is ideal for: Point-to-Point and Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram Gain:.5 db Saturated
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TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier Key Features 0.25 um phemt Technology 17 db Nominal Gain 31 dbm Pout @ P1dB, Psat 33dBm @ 6V, 34dBm @7V Bias 6-7V @
More informationFeatures. = +25 C, Vdd= +5V
Typical Applications This is ideal for: Wideband Communication Systems Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation * VSAT Functional Diagram
More informationParameter Frequency Typ Min (GHz)
The is a broadband MMIC LO buffer amplifier that efficiently provides high gain and output power over a 20-55 GHz frequency band. It is designed to provide a strong, flat output power response when driven
More informationMMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012
Features: Frequency Range: 30KHz 40 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 13.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω In 4x4mm QFN package Applications: Fiber optics communication
More informationFeatures. = +25 C, Vdd1, Vdd2 = +5V
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More informationFeatures. = +25 C, Vdd 1, 2, 3 = +3V
v3.917 Typical Applications Features The HMC17 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
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Main Features Product Description MECGaNLNACX is a 0.25µm GaN HEMT Low Noise Amplifier designed and tested by MEC for C- to X-Band applications. In the frequency range from 5 GHz to 12 GHz MECGaNLNACX
More informationFeatures. = +25 C, Vdd 1, 2, 3 = +3V
v.91 HMC519 AMPLIFIER, 1-32 GHz Typical Applications The HMC519 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors
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More informationFeatures. = +25 C, Vdd= +8V *
Typical Applications Features This is ideal for: Fiber Optic Modulator Driver Fiber Optic Photoreceiver Post Amplifi er Gain Block for Test & Measurement Equipment Point-to-Point/Point-to-Multi-Point Radio
More informationFeatures. = +25 C, Vdd 1, 2, 3 = +3V
Typical Applications Functional Diagram v.97 The HMC is ideal for use as a LNA or driver amplifi er for : Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military &
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