4W CW, MHz Power Transistor

Transcription

1 4W CW, Power Transistor FEATURES Frequency: Mhz: 16.5dB 900: 37dBm Psat: V Operation DESCRIPTION The is a broadband capable 4W GaN on Silicon power transistor optimized for frequency band. The input and output can be matched on board for best power and efficiency for the desired band. APPLICATIONS Land Mobile Radios Military Radios Wideband and Narrowband Amplifiers The is packaged in a compact, low cost Quad Flat No lead (QFN) 3x3mm, 16 leads plastic package. TUNED DEMO BOARDS Figure 1: Functional Block Diagram (top view) ORDERING INFORMATION Base Part Number Package Type Form Standard Pack Quantity Orderable Part Number QFN 3 mm x 3 mm Tape and Reel 3000 MTRPBF Tagore Technology Rev1.1

2 PIN DESCRIPTION PIN NUMBER PIN NAME DESCRIPTION 1,2, 4, 5, 6, 7, 8, 9, 11, 12, 13, 14, 15, 16 NC Not Connected 3 Vgg & RFin Gate Voltage and RF Input Vdd & RFout Drain Voltage and RF Output 17 1 Paddle/Slug Ground Note 1: Backside ground slug of the package must be grounded directly to the ground plane through multiple vias to ensure proper operation ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNITS Breakdown Voltage VDS +0 V Gate Source Voltage Range VGS -7 to +1.5 V Drain Current IDS 400 ma Gate Current IGS 2.4 ma Power dissipation 25degC Pdiss 6.0 W RF Input Power CW, 25degC, 900 RFin 25 dbm Junction Temperature Tj 180 C Storage temperature Range T st -40 to +150 C Operating Temperature Range T op -40 to +85 C Exceeding one or a combination of the Absolute Maximum Ratings conditions may cause permanent damage to the device RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL Min Typ Max UNITS Drain Voltage Vd V Gate Voltage Vgg V Drain Bias Current Idq 30 ma Drain Current Id 300 ma Power dissipation CW 2 Pdiss 5.5 W Operating Temperature Range T op C Note 2: Package base at 85deg C Tagore Technology Rev1.1

3 THERMAL CHARACTERISTICS PARAMETER Test Condition Symbol Typ UNITS Thermal Resistance Vd = 28V, Tj = 180 degc θ JC 20 C/W RF Electrical Specifications Data taken on Broadband Reference Design, Vdd = 28V, Idq = 30mA, CW, Room Temp PARAMETER Test Conditions Min Typ Max UNITS Small Signal Gain (Gss) db Small Signal Gain (Gss) db Large Signal Gain Pout = 36dBm, db Large Signal Gain Pout = 36dBm, db Psat dbm Power Added Efficiency (PAE) Pout = 36dBm, % Drain Voltage 28 Vdd Ruggedness All phase angles, Pout = 36dBm TBD Tagore Technology Rev1.1

4 Gain [db] Drain Efficiency [%] Gain [db] Drain Efficiency [%] Preliminary Specification Power Drive-Up of EVB Note: Vd = 28V, Idq = 30mA, CW, Room Temp EFF Total Pout [dbm] 20 0 EFF 200 EFF 450 EFF 900 Figure 2: Gain, Efficiency vs Pout (30 900) Total Pout [dbm] EFF 1.0 EFF 1.8 EFF 2.2 EFF 2.7 Figure 3: Gain, Efficiency vs Pout ( ) Tagore Technology Rev1.1

5 Gain [db] Drain Efficiency [%] Gain [db] Drain Efficiency [%] Preliminary Specification Power Drive-Up of EVB Note: Vd = 20V, Idq = 30mA, CW, Room Temp Total Pout [dbm] EFF 30 EFF 200 EFF 450 EFF 900 Figure 4: Gain, Efficiency vs Pout (30 900) EFF Total Pout [dbm] Figure 5: Gain, Efficiency vs Pout ( ) 20 0 EFF 1.8 EFF 2.2 EFF Tagore Technology Rev1.1

6 IMD5 [dbc] IMD3 [dbc] Preliminary Specification Typical Two Tone Power Drive-Up of EVB Note: Vd = 28V, Idq = 30mA, Room Temp, Frequency Spacing Lower IM3, 450 Upper IM3, 450 MHZ Lower IM3, 1.5 Upper IM3, 1.5 Lower IM3, 2.7 Upper IM3, "PEP"Output (Pavg + 3) [dbm] Figure 8: IMD3 vs Pout Lower IM5, 450 Upper IM5, 450 Lower IM5, 1.5 Upper IM5, 1.5 Lower IM5, 2.7 Upper IM5, "PEP" Output (Pavg + 3) [dbm] Figure 9: IMD5 vs Pout Tagore Technology Rev1.1

7 IMD5 [dbc] IMD3 [dbc] Preliminary Specification Note: Vd = 20V, Idq = 30mA, Room Temp, Frequency Spacing Lower IM3, 450 Upper IM3, 450 MHZ Lower IM3, 1.5 Upper IM3, 1.5 Lower IM3, 2.7 Upper IM3, "PEP"Output (Pavg + 3) [dbm] Figure : IMD3 vs Pout Lower IM5, 450 Upper IM5, 450 Lower IM5, 1.5 Upper IM5, 1.5 Lower IM5, 2.7 Upper IM5, "PEP" Output (Pavg + 3) [dbm] Figure 11: IMD5 vs Pout Tagore Technology Rev1.1

8 Bias and Sequencing Turn ON Device 1. Set Vg to -5V. 2. Set Vd to +28V. 3. Adjust Vg to achieve Idq current. 4. Apply RF power Turn OFF Device 1. Turn RF power off. 2. Turn off Vd 3. Turn off Vg Tagore Technology Rev1.1

9 EVB Schematic Tuned for VDD Vgg 28V -v e D1 C3 C5 0uF C4 0.1uF L2 0.1uF RF IN C1 4.7nF L1 1.6nH C2 1.2pF 18nH R2 200ohm R3 51ohm PA L3 900nH L4 1.6nH C6 0.7pF C9 4.7nF RF OUT Part List Reference Value Manufacturer Part/Series C1, C9 4.7nF Murata GRM18 Series C2 1.2pF ATC 600S1R2CT250XT L1,L4 1.6nH Coilcraft 0603HC-1N6XGLW L2 18nH Coilcraft 0402CS-18N0XGLW L3 900nH Coilcraft 08AF-901XJLC C3 0.1uF AVX 0603ZC4K4T2A C4 0.1uF, 50V Murata GRM31C5C1H4JA01L C5 0uF Nichicon UPW1J1MPD1TD C6 0.7pF ATC ATC0A0R7GW150XT R2 200 ohms Panasonic ERJ-3EKF2000V R3 51 ohms Panasonic ERJ-PA3F51R0V D1 7.5 V Zener On Semiconductor MMSZ5236BT 1G PCB Rogers RO4350B, 20 mils, 2 ounce copper Tagore Technology Rev1.1

10 PACKAGE INFORMATION Figure 12: Package drawings Tagore Technology Rev1.1

11 QUALIFICATION INFORMATION Qualification Level Consumer Moisture Sensitivity Level 3x3 QFN MSL1 Human Body Model Charged Device Model TBD NA RoHS Compliant Yes The information provided in this document is believed to be accurate and reliable. However, Tagore Technology assumes no responsibility for the consequences of the use of this information. Tagore Technology assumes no responsibility for any infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any patent or patent rights of Tagore Technology. The specifications mentioned in this document are subject to change without notice. This document supersedes and replaces all information previously supplied. For technical support, please contact Tagore Technology WORLD HEADQUARTERS: 5 East College Dr. Suite 200, Arlington Heights, IL Tagore Technology Rev1.1