Innogration (Suzhou) Co., Ltd.

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Alicia Gibson
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Gallium Nitride 28V 50W, RF Power Transistor Description The GTAH58050GX is a 50W internally matched, GaN HEMT, designed from 5 to 6GHz, especially point-to-point communication, broadband wireless

Typical pulsed CW performance (on wide band fixture with device soldered) V DD=28V I DQ=200mA, Pulse width=20us, Duty cycle=10%.

1 Gallium Nitride 28V 50W, RF Power Transistor Description The GTAH58050GX is a 50W internally matched, GaN HEMT, designed from 5 to 6GHz, especially point-to-point communication, broadband wireless access, 5.8GHz ISM applications, as well as either Pulse or CW application There is no guarantee of performance when this part is used in applications designed Outside of these frequencies. Typical pulsed CW performance (on wide band fixture with device soldered) V DD=28V I DQ=200mA, Pulse width=20us, Duty cycle=10%. Freq(MHz) P1dB(dBm) P3dB(W) Eff(%)@P3dB GTAH58050GX Typical CW performance (on wide band fixture with device soldered) V DD=28V I DQ=200mA, Pout Freq(MHz) Pin(dBm) Pout(dBm) Pout(W) Ids(A) Eff(%) % % % % % % % % %. Applications and Features Suitable for wireless communication infrastructure, High Reliability Metallization Process wideband amplifier, EMC testing, ISM etc. Excellent thermal Stability and Excellent Ruggedness High Efficiency and Linear Gain Operations Compliant to Restriction of Hazardous Substances (RoHS) Thermally Enhanced Industry Standard Package Directive 2002/95/EC Important Note: Proper Biasing Sequence for GaN HEMT Transistors Turning the device ON Turning the device OFF 1. Set VGS to the pinch--off (VP) voltage, typically 5 V 1. Turn RF power off 2. Turn on VDS to nominal supply voltage (28V) 2. Reduce VGS down to VP, typically 5 V 3. Increase VGS until IDS current is attained 3. Reduce VDS down to 0 V 4. Apply RF input power to desired level 4. Turn off VGS 1 / 6

2 ACPR(dBc) Table 1. Maximum Ratings Innogration (Suzhou) Co., Ltd. Rating Symbol Value Unit Drain--Source Voltage VDSS 150 Vdc Gate--Source Voltage VGS -10,+2 Vdc Operating Voltage VDD 40 Vdc Maximum Forward Gate TC = 25 C Igmax 14.4 ma Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature TC +150 C Operating Junction Temperature(See note 1) TJ +200 C Total Device Power Dissipation Pdiss 75 W (Derated above 25 C, see note 2) Note: 1. Continuous operation at maximum junction temperature will affect MTTF 2.Bias Conditions should also satisfy the following expression: Pdiss < (Tj Tc) / RJC and Tc = Tcase Table 2. Thermal Characteristics Thermal Resistance, Junction to Case T C= 85 C, T J=200 C, RF CW operation Characteristic Symbol Value Unit Table 3. Electrical Characteristics (T C = 25 unless otherwise noted) DC Characteristics R JC 2.5 Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS =-8V; I DS =14.4mA V DSS 150 V Gate Threshold Voltage V DS = 28V, I D =14.4mA V GS (th) -2.7 V Gate Quiescent Voltage V DS =28V, I DS =200mA, Measured in Functional Test V GS(Q) V Functional Tests (In GHz wideband Production Test Fixture, 50 ohm system) :V DD = 28 Vdc, I DQ = 200 ma, f = 5800 MHz, WCDMA signal, Pout=10W Characteristic Symbol Min Typ Max Unit Power Gain Gp 9 10 db Drain P out Eff % Saturated Power by CCDF test P SAT 50 W Input Return Loss IRL -5 db Mismatch stress at all phases (Device no damage) VSWR 10:1 Figure 1: ACPR linearity across the band V DD=28V I DQ=200mA, WCDMA 1 Carrier 0.01% probability Pout(dBm) / 6

3 Figure 2: Network Analyzer plots for gain and IRL V DD=28V I DQ=200mA Figure 3: Pulsed CW performance at different power supply 28V and 32V 3 / 6

4 Figure 4: Photo and bill of materials of GHz wide band application circuit PCB:RO4350B 30Mil (Layout gerber file upon request) C5 C6 + - C2 R1 C3 C7 C1 C4 40x50 inputmatch 40x50 outputmatch Designator Value Quantity Package Reference C1 C2 C3 C4 3.6pF ATC600F C5 C6 10uF X7R C7 100uF/50V 1 aluminum electrolytic capacitor R1 10Ω / 6

5 Package Outline Flanged ceramic package; 2 leads OUTLINE VERSION REFERENCE IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE PKG-GXB 10/10/2017 Figure 1. Package Outline PKG-G2E 5 / 6

6 Revision history Table 4. Document revision history Date Revision Datasheet Status 2018/11/22 V1.0 Preliminary Datasheet Creation Notice Specifications are subject to change without notice. Innogration believes the information within the data sheet to be reliable. Innogration makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameter is the average values expected by Innogration in quantities and are provided for information purposes only. It can and do vary in different applications and related performance can vary over time. All parameters should be validated by customer s technical experts for each application. Innogration products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Innogration product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For any concerns or questions related to terms or conditions, please check with Innogration and authorized distributors Copyright by Innogration (Suzhou) Co.,Ltd. 6 / 6

NME6003H GaN TRANSISTOR

NME6003H GaN TRANSISTOR Gallium Nitride 28V 25W, RF Power Transistor Description The NME6003H is a 25W, unmatched GaN HEMT, designed for multiple applications with frequencies up to 6GHz. NME6003H There is no guarantee of performance