TB263 Frequency=30-512MHz Pout=180W Gain= dB Vds=28Vdc Idq=0.5A Efficiency=56-70% LS2641
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1 TB263 Frequency=-512MHz Pout=18W Gain= dB Vds=28Vdc Idq=.5A Efficiency=56-7% LS2641 Order of Operations: 1. Review amplifier s performance curves in the data package to learn its RF power limitations. 2. Terminate the RF In/Out connectors to ohm source and load impedance. 3. Connect Ground and Vds power supply to DC power supply. 4. Apply 28Vdc to Vds voltage. 5. Verify Idq=.5A (amps) 6. Apply RF drive signal (refer to curves in data package to avoid overdrive). 7. Avoid allowing the base plate to reach 85 deg C by using proper cooling techniques (aluminum heat sink and min 22CFM fan).
2 Gain(dB) TB263, LS2641 Gain/Efficiency vs. Frequency: Vds = 28VDC, Idq =.5A, Pout = 18W Efficiency (%) Frequency (Mhz) Gain Efficiency
3 Pout (dbm) TB263, LS2641 Pout/Gain/Efficiency vs. Pin : Vds = 28VDC, Idq =.5A, Freq = Mhz Efficiency (%/) / Gain(dB) Pin (dbm) Pout Efficiency Gain
4 Pout (dbm) TB263, LS2641 Pout/Gain/Efficiency vs. Pin : Vds = 28VDC, Idq =.5A, Freq = 2Mhz Efficiency (%/) / Gain(dB) Pin (dbm) Pout Efficiency Gain
5 Pout (dbm) TB263, LS2641 Pout/Gain/Efficiency vs. Pin : Vds = 28VDC, Idq =.5A, Freq = 512Mhz Efficiency (%/) / Gain(dB) Pin (dbm) Pout Efficiency Gain
6 Power (W) 26 TB263 LS2641 P1dB & P3dB vs. Frequency: Vds=28VDC, Idq=.5A Frequency (Mhz) P3dB P1dB
7 Attenuation (dbc) TB263, LS2641 2nd/3rd Harmonics vs. Frequency: Pout = 18W, Vds = 28VDC, Idq =.5A Frequency (Mhz) 2nd Harmonics 3rd Harmonic
8 Attenuation (dbc) TB263, LS2641 IMDs vs. Frequency: Vds = 28VDC, Idq =.5A, PEP = 18W, Separation = 1kHz Frequency (Mhz) IM3 IM5
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12 NOMENCLATURE DESCRIPTION VENDER VENDER PART # C4 2.7pF+/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N1RBW1 C5, C1 1.2pF+/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N3RBW1 C6 1pF+/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N9R1BW1 C7 47pF +/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N4BW1 C11, C36 3.pF +/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N3R3BW1 C16 Aluminum Electrolytic Capacitors - SMD 35Volts 22uF 2% United Chemi-Con EMZJ3ADA221MHAG C19,C22,C25,C28.1uF +/-1% RF By-Pass Capacitors,1111X Passive Plus, Inc 1111X14KW C24,C27 1uF TANCERAM HIGH CAP. SMD 126 Passive Plus, Inc PPI-GMC31X5R16K1 C23,C26 4.7uF TANCERAM HIGH CAP. SMD 126 Passive Plus, Inc PPI-GMC31X7R475K25NT C8,C9,C17,C2 1pF +/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N12GW C1,C2,C3,C12,C14,C15, C18,C21 1,pF +/-1% RF By-Pass Capacitors,1111X Passive Plus, Inc 111X13KW C29 1uF 63V 2% AVX Tantalum Capacitors AVX TCJE16M63R1 C Aluminum Electrolytic Capacitors - SMD 47UF 35V TK SMD Panasonic EE-TK1V47P C31 3.3uF TANCERAM HIGH CAP. SMD 126 Johanson Dielectrics 1r18x335KV4E C32 1nF 1% Hi-Q/Low ESR Passive Plus, Inc 5x12KW C33,C34 1uF 1%TAMCERAM HIGH CAP. SMD 63 Johanson Dielectrics 2r14x15kv4t C35 1uF 1%TAMCERAM HIGH CAP. SMD 85 Johanson Dielectrics 1r15x16kv4e R1,R2 W, 2OHM Innovative Power Products-IPP IPP-RB21-2 R3,R4 RES 22ohm 2W 1% 2512 SMD Stackpole Electronics Inc RHC2512FT22R R5 RES 1K OHM 1/4W 5% 126 SMD Rohm Semiconductor MCR18EZPJ13 R7 RES 5K 1/2W 5% CARBON FILM Stackpole Electronics Inc CF12JT5K R8,R9,R14 1K 1/4W 85 SMD Rohm Semiconductor MCR1EZHJ13 R1 56K 1/4W 85 SMD Rohm Semiconductor MCR1EZPJ563 R11 4.7K 1/4W 85 SMD Rohm Semiconductor MCR1EZPF471 R12 RES OHM 1W 5% METAL OXIDE Xicon 281--RC R15 RES 1 OHM 1W 5% METAL OXIDE Xicon RC RT1 1 OHM TEMP SENSOR AXIAL NXP Semiconductors KTY83/11,113 POT1 Trimmer Resistors - 1K OHM.25W SMD Murata Electronics North America PVG5A13C3R L1,L2 85 1kohms HiSpeed EMI Filter Beads,Chokes & Arrays Murata Electronics North America 81-BLM21BD12SH1D L3 2turns 18AWG I.D 195mils MW28SPNRD WIRE 18 AWG Hook-up Wire UL Belden U1 IC REG LDO ADJ ma 8-MSOP Linear Technology LT1EMS8E#PBF U2 IC OP AMP R-R I/O SOT23-5 National Semiconductor LM7321MF/NOPB T1 Semi-ridge Coax,1.8 inch, ohm MICROWAVE UT-34-M17 T2a,T2b Semi-ridge Coax,1.8 inch, 25ohm MICROWAVE UT-34-25
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SHF-0186K GHz, 0.5 Watt GaAs HFET
DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits Abstract Sirenza Microdevices SHF-86K is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount
Features. Description. Table 1: Device summary Order code Marking Package Packing SD2932W SD2932 (1) M244 Tube
HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features Gold metallization Excellent thermal stability Common source push-pull configuration POUT = 300 W min. with 15 db gain @ 175 MHz
SELECTION GUIDE. Nominal Input Voltage Output Voltage. Output Current
www.murata-ps.com CRV2 Series SELECTION GUIDE Order Code Nominal Input Voltage Output Voltage Output Current Input Current at Rated Load Load Regulation (Typ) Load Regulation (Max) Ripple & Noise (Typ)
0.5-20GHz Driver. GaAs Monolithic Microwave IC
Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide
GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-26-931SM The ADM-26-931SM is a broadband, power efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. The ADM-26-931SM is designed to provide optimal LO drive for T3 mixers.
Efficiency: 68% Temperature Range: +0 to 60 C Max VSWR: 5:1. Class: Supply Voltage:
Part Number Revision 2.C Release Date July 11 2007 Revision Notes - updated new format Amplifier Name Technical Specifications Summary Frequency Range: P1dB: Class: Supply Voltage: 88-108 MHz 750 Watts
Features. = +25 C, Vcc = +5V
Typical Applications Low noise wideband MMIC VCO for applications such as: Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM Functional Diagram Features Wide Tuning Bandwidth
GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-26-929SM The ADM-26-929SM is a broadband, efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. It is designed to provide optimal LO drive for T3 mixers and offers 13 db typical
HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]
![HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]](/thumbs/96/128456064.jpg "HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]")
Typical Applications The HMC44ST8 / HMC44ST8E is ideal for applications requiring a high dynamic range amplifi er: GSM, GPRS & EDGE CDMA & W-CDMA CATV/Cable Modem Fixed Wireless & WLL Features Output IP3:
Features. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -7 dbc/hz @ khz Noise Figure: 6 db Gain:
Demo Circuit DC550A Quick Start Guide.
May 12, 2004 Demo Circuit DC550A. Introduction Demo circuit DC550A demonstrates operation of the LT5514 IC, a DC-850MHz bandwidth open loop transconductance amplifier with high impedance open collector
ASL 1005P3 Data Sheet Rev: 1.0 Apr 2017
ASL P3 Rev:. Apr 27.8 4 GHz Frequency Tunable Ultra Low Noise Amplifier Features Frequency Range:.8-4 GHz.7 db typ. NF Tunable Noise match 2 db 4dBm Nominal PdB On-chip DC Blocks -7mA Tunable Bias current.-um
GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-12-931SM The ADM-12-931SM is a small, low power, and economical T3 driver or T3A pre-amplifier. It is a GaAs PHEMT distributed amplifier in a 3mm QFN surface mount package. The ADM-12-931SM can provide
AGR09085E 85 W, 865 MHz 895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for
Ultra Wide Band Low Noise Amplifier GHz. Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System
Ultra Wide Band Low Noise Amplifier 0.5 46GHz Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.5 20 20 46 GHz Gain 13 13 db Gain Variation Over Temperature (-45 ~ +85) ±3 ±2 db Noise Figure
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC32LC Typical Applications
MMA M GHz, 1W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 37-41 GHz P1dB: +30.5 dbm IM3 Level: -41 dbc @Po=18dBm/tone Gain: 22 db Vdd = 4 to 6 V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector
Frequency Range: MHz. Efficiency: 10% Temperature Range: 0 to 60 C Max VSWR: 5:1. Class: Supply Voltage: 28.0V
Part Number Revision 1.c Release Date July 24, 2007 Revision Notes Amplifier Name Technical Specifications Summary Frequency Range: 50-88 MHz P1dB: 60 Watts CW Class: A Supply Voltage: 28.0V Gain: 36dB
MER1 Series 1kVDC Isolated 1W Single Output DC-DC Converters
www.murata-ps.com MER1 Series SELECTION GUIDE Order Code Nominal Input Voltage Output Voltage Output Current Input Current at Rated Load Load Regulation (Typ) Load Regulation (Max) Ripple & Noise (Typ)
DC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units
7-3 RF-LAMBDA DC-20 GHz Distributed Driver Amplifier Electrical Specifications, T A =25 Features Ultra wideband performance Positive gain slope High output power Low noise figure Microwave radio and VSAT
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications Low noise wideband
HMC346MS8G / 346MS8GE
Typical Applications v7.18 Features This attenuator is ideal for use as a VVA for DC - 8 GHz applications: Point-to-Point Radio VSAT Radio Functional Diagram Wide Bandwidth: DC - 8 GHz Low Phase Shift
Frequency Divider, Divide by 2 Prescaler Module, 500 MHz to 18 GHz, Field Replaceable SMA
Features Divide by 2 Prescaler Wide Frequency Band GaAs HBT MMIC Technology Low Phase Noise -15 dbc/hz @ 1 khz offset Output Power -4 dbm Low Reverse Leakage Level 55 db typical Applications Electronic
Features. Pout: +9 dbm. Parameter Min. Typ. Max. Units
Typical Applications Phase-Locked Oscillator for: SAT Radio Point-to-Point & Point-to-Multi-Point Radio Test Equipment & Industrial Controls Military End-Use Functional Diagram Features Pout: +9 dbm Phase
MMA GHz, 1W MMIC Power Amplifier Data Sheet March, 2012
Features: Frequency Range: 37 40 GHz P1dB: +30.5 dbm IM3 Level: -40 dbc @Po=18dBm/tone Gain: 22 db Vdd = 5V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector Applications:
2-6 GHz Broadband 4-Watt Power Amplifiers. One Product. Multiple Solutions.
2-6 GHz Broadband 4-Watt Power Amplifiers One Product. Multiple Solutions. Spectrum Microwave There is a new microwave technology leader with a proven track record in military and commercial applications...