DESCRIPTION. APPLICATIONS Microwave Radios Military Radios VSAT Telecom Infrastructure Test Equipment
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- Briana Wells
- 6 years ago
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1 KX W, 6.0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface-Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. FEATURES High Small Signal Gain: 15 4 GHz. High Output Power: 15W P SAT. High Breakdown Voltage, Efficiency and Temperature Operation. APPLICATIONS Microwave Radios Military Radios VSAT Telecom Infrastructure Test Equipment ELECTRICAL CHARACTERISTICS (-40 to 85 C) Parameter Symbol Conditions Min Typical Max Units Small Signal Gain G SS V DD = 28 V, I DQ = 100 ma 15 db Saturated Power Output 1 P SAT V DS = 28 V, I DQ = 100 ma 15 W Drain Efficiency 2 V DS = 28 V, I DQ = 100 ma, P SAT = 15 W Output Mismatch VSWR V DS = 28 V, I DQ = 100 ma, Stress P OUT = 15 W CW 1. PSAT is defined as I G = 0.4 ma. 2. Drain Efficiency = P OUT /P DC. 65 % 10:1 1
2 OPERATING CHARACTERISTICS (-40 TO +85 C) 1 Parameter Symbol Conditions Min Typical Max Units Gate Threshold Voltage V GS(TH) V DS = 10 V, I D = 3.6 ma V Gate Quiescent Voltage V GS(Q) V DS = 28 V, I DQ = 100 ma -2.7 V Drain-Source Breakdown Voltage V BD V GS = -8 V, I D = 3.6 ma 120 V On Resistance R ON V DS = 0.1 V 1.0 Input Capacitance C GS V DS = 28 V, V GS = -8 V, f = 1 MHz Output Capacitance C DS V DS = 28 V, V GS = -8 V, f = 1 MHz Feedback Capacitance C GD V DS = 28 V, V GS = -8 V, f = 1 MHz 4.1 pf 0.9 pf 0.2 pf 1. All operating characteristics are guaranteed over full performance temperature range but not tested. ABSOLUTE MAXIMUM RATINGS Characteristic Conditions Symbol Rating Units Drain-Source voltage 25 C V DSS 84 VDC Gate-Source voltage 25 C V GS -10/+2 VDC Storage temperature -65/+150 C Operating junction temperature 225 C Maximum Forward Gate Current 25 C I GMAX 4 ma Maximum Drain Current 25 C I DMAX 1.5 A Thermal resistance, Junction to Case R JC 5.4 C/W ESD sensitivity (HBM) JEDEC JESD22/A114-D 1A/250V 2
3 TYPICAL PERFORMANCE (+25 C) KX105 GaN HEMT Transistor, 15 W, 6.0 GHz Gain and Return Loss vs Frequency 1 Output Power/Efficiency vs Input Power 1 1. Gain and power data from device in application board 3
4 OUTLINE: DEVICE MARKING/PIN OUT: PIN Designation PIN Designation 1 SOURCE 5 SOURCE 2 SOURCE 6 SOURCE 3 SOURCE 7 SOURCE 4 GATE 8 DRAIN PACKAGE NOTES: Lid: White Ceramic Base: Aluminum Nitride Mounting Surface Finish: Gold over Nickel over Copper ADDITIONAL NOTES: Maximum reflow temperature: 265 C for seconds Package base is the transistor source 4
5 EVALUATION BOARD: BOM for KCB307 Evaluation Board, 20-FEB-2017 Qty Reference Designator Description Digikey Part Number Manufacturer 2 J1,J2 SMA Edge Launch Connector ND 1 J3 0.1" DC Header, 8 Positions 1 U1 KCB307 Power Amplifier N/A 6 C1,C3,C8,C9,C10,C11 12pF, 0402, 100V, 5% ND Murata 1 C2 2.4pF, 0402, 50V, +/-0.1pF ND Johanson 1 C4 3.3pF, 0402, 50V, +/-0.1pF ND Johanson 2 L1, L2 FIXED IND 22NH 350MA 420 MOHM ND Murata 2 R1, R2 RES SMD 49.9 OHM 1% 1/10W 0402 P49.9LCT-ND Panasonic 1 R4 RES SMD 0.0 OHM 1% 1/8W 0402 P0.0JCT-ND Panasonic 1 R3 RES SMD 1.5K OHM 1% 1/10W 0402 P1.50KLCT-ND Panasonic 1 C15 1.0pF, 0402, 100V, +/-0.1pF ND Kemet 1 C16 0.2pF, 0402, 100V, +/-0.05pF ND Murata 1 C18 1.4pF, 0402, 50V, +/-0.1pF ND Murata 1 C12 10nF, 0402, 50V ND Murata 1 C13 Do not populate 1 C19 4.7uF, 2312, 50V, +/-20% ND AVX 5 C5,C6,C7,C14,C17 Do not populate 5
6 S-PARAMETER DATA: (V DS = 28V, I DQ = 100mA) FREQ
7 S-PARAMETER DATA: (V DS = 28V, I DQ = 100mA) FREQ
8 S-PARAMETER DATA: (V DS = 28V, I DQ = 100mA) FREQ
= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA625F 25 W, 2 MHz-6 MHz, GaN MMIC Power Amplifier Cree s CMPA625F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
transistor is available in a flange and pill package. Package Types: & PN s: CG2H40045F & CG2H40045P
Rev 0.0 - May 2017 CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt
= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
CMPA F. 25 W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Applications. Features
CMPA558525F 25 W, 5.5-8.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA558525F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
CMPA801B W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Features. Applications
CMPA801B025 25 W, 8.5-11.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
CGH80030D. 30 W, 8.0 GHz, GaN HEMT Die. 2-Way Private Radio. Broadband Amplifiers. Cellular Infrastructure. Test Instrumentation
CGH80030D 30 W, 8.0 GHz, GaN HEMT Die Cree s CGH80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on Cree s 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties
CGH40120P. 120 W, RF Power GaN HEMT FEATURES APPLICATIONS
Rev 3.1 - November 2017 CGH40120P 120 W, RF Power GaN HEMT Cree s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail,
transistor is available in a flange and pill package. Package Types: & PN s: CG2H40045P & CG2H40045F
Rev 0.0 - May 2017 CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt
transistor is available in a flange and pill package. Package Types: & PN s: CGH40045F & CGH40045P
Rev 4.0 - May 2015 CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail,
= 25 C), 50 V. Parameter 800 MHz 850 MHz 900 MHz 950 MHz 1000 MHz Units. Small Signal Gain db
CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers
CGH40006P. 6 W, RF Power GaN HEMT APPLICATIONS FEATURES
Rev 3. May 15 CGHP W, RF Power GaN HEMT Cree s CGHP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHP, operating from a volt rail, offers a general purpose, broadband
CGH55015F2 / CGH55015P2
Rev 4.0 May 2015 CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree s CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm
CGHV4PP W, 5 V, GaN HEMT Cree s CGHV4PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV4PP, operating from a 5 volt rail, offers a general purpose, broadband solution
= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm
CGHV42PP 2 W, 5 V, GaN HEMT Cree s CGHV42PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV42PP, operating from a 5 volt rail, offers a general purpose, broadband
= 25 C) Note: Measured in CGHV96100F2-TB (838179) under 100 µs pulse width, 10% duty, Pin 42.0 dbm (16 W) Applications. Marine Radar.
CGHV96100F2 100 W, 8.4-9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN
PRELIMINARY. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain db
CGH49PP 9 W, RF Power GaN HEMT PRELIMINARY Cree s CGH49PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH49PP, operating from a 28 volt rail, offers a general purpose,
CMPA F. 30 W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Features. Applications
CMPA83F 3 W,. - 8. GHz, GaN MMIC, Power Amplifier Cree s CMPA83F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA6D Watt, MHz - 6 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA6D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
CG2H W, DC - 6 GHz, RF Power GaN HEMT APPLICATIONS FEATURES
Rev 0.0 May 2017 CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt
well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and = 25 C), 50 V
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general
= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA0060002D 2 Watt, MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
= 25 C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units Gain db W Power P OUT. = 43 dbm
CMPA2560025D 25 W, 2.5-6.0 GHz, GaN MMIC, Power Amplifier Cree s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
= 25 C) of Demonstration Amplifier. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units. 43 dbm
Rev 3.1 - June 2015 CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
CGH55030F2 / CGH55030P2
Rev 3.2 April 2012 CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
Parameter 5.2 GHz 5.5 GHz 5.9 GHz Units. Small Signal Gain db. Output Power W. Efficiency
CMPA5259025F 25 W, 5200-5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Cree s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated
= 25 C), 50 V. Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units. Saturated Output Power W
CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide
maintaining high gain and efficiency. Package Type: 3x4 DFN PN: CGHV1F025S Parameter 8.9 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units = 37 dbm W
Rev.1 July 017 CGHV1F05S 5 W, DC - 15 GHz, 40V, GaN HEMT Cree s CGHV1F05S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W
CMPA006005D 5 W, 0 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA006005D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN
Rev 4.1 May 2017 CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide
CGH35060F1 / CGH35060P1
CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically
= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.
CGHV965F1 5 W, 7.9-9.6 GHz, 5-ohm, Input/Output Matched GaN HEMT Cree s CGHV965F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
= 25 C), 50 V. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain db
CGHV40100 100 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general
PRELIMINARY. Cree s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor
PRELIMINARY CGHV597 7 W, 4.4-5.9 GHz, 5 V, RF Power GaN HEMT Cree s CGHV597 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV597, operating from a 5 volt
= 25 C) Parameter 8.0 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain db P OUT. = 25 dbm W Power P IN
CMPA80B05D 5 W, 8.0 -.0 GHz, GaN MMIC, Power Amplifier Cree s CMP80B05D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has
MHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P
CGHV1425 25 W, 12-14 MHz, GaN HEMT for L-Band Radar Systems Cree s CGHV1425 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and
CGHV1J070D. 70 W, 18.0 GHz, GaN HEMT Die
Rev 1.0 May 2017 CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25
CGHV1J025D. 25 W, 18.0 GHz, GaN HEMT Die
Rev 2.0 May 2017 CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units
Rev 4.0 May 2015 CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for
CGHV60040D. 40 W, 6.0 GHz, GaN HEMT Die. Cellular Infrastructure Class AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms
Rev 1.1 March 2019 CGHV60040D 40 W, 6.0 GHz, GaN HEMT Die Cree s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz = 25 C) Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.
CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency,
MHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P
CGHV1425 25 W, 12-14 MHz, GaN HEMT for L-Band Radar Systems Cree s CGHV1425 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and
= 25 C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain db
CMPA273575D 75 W, 2.7-3.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA273575D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
MAGX MAGX S
Features GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu) RoHS* Compliant +50V Typical Operation
60 W, DC MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications. = 25 C) of Demonstration Amplifier
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic
CGH55030F1 / CGH55030P1
CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
= 25 C) Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units Small Signal Gain db P OUT
CMPA601C025F 25 W, 6.0-12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a
CMPA1D1E025F. 25 W, GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Features.
CMPA1D1E025F 25 W, 13.75-14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Cree s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated
PRELIMINARY = 25 C) Parameter GHz 14.0 GHz 14.5 GHz Units Small Signal Gain db P SAT. = 26 dbm W P 3dB
CMPADE030D PRELIMINARY 30 W, 3.75-4.5 GHz, 40 V, GaN MMIC, Power Amplifier Cree s CMPADE030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit
350 W, MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems. = 25 C) of Demonstration Amplifier
CGHV5935 35 W, 52-59 MHz, 5-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree s CGHV5935 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high
= 25 C) Parameter 5.5 GHz 6.5 GHz 7.5 GHz 8.5 GHz Units Small Signal Gain db P OUT
CMPA5585030D 30 W, 5.5-8.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA5585030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
maintaining high gain and efficiency. Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain db = 28 dbm
CGHVF006S 6 W, DC - 5 GHz, 40V, GaN HEMT Cree s CGHVF006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
NME6003H GaN TRANSISTOR
Gallium Nitride 28V 25W, RF Power Transistor Description The NME6003H is a 25W, unmatched GaN HEMT, designed for multiple applications with frequencies up to 6GHz. NME6003H There is no guarantee of performance
MAGX L00 MAGX L0S
Features GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 C Reflow Compatible +50 V Typical Operation
NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V4P. Features. Functional Schematic.
Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable From 48 V Operation 16 db Gain @ 2.5 GHz 56 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Lead-Free 3x6 mm
NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V6P. Features. Functional Schematic.
Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable from V Power Operation 16 db Gain @ 2.5 GHz 56% Drain Efficiency @ 2.5 GHz 100% RF Tested Lead-Free 3 x
Innogration (Suzhou) Co., Ltd.
Gallium Nitride 28V 50W, RF Power Transistor Description The GTAH58050GX is a 50W internally matched, GaN HEMT, designed from 5 to 6GHz, especially point-to-point communication, broadband wireless access,
25W Power Packaged Transistor. GaN HEMT on SiC
25W Power Packaged Transistor GaN HEMT on SiC Description The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety
MAGX L00 MAGX L0S
Features GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 C Reflow Compatible +50 V Typical Operation
15W Power Packaged Transistor. GaN HEMT on SiC
Gain (db), Pout (dbm) & PAE (%) Drain Current (A) CHK15A-QIA Description The CHK15A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
Efficiency (%) g261701fa-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
g26171fa-gr1a GTVA26171FA Thermally-Enhanced High Power RF GaN on SiC HEMT 17 W, 5 V, 26 269 MHz Description The GTVA26171FA is a 17-watt (P 3dB ) GaN on SiC high electron mobility transistor (HEMT) for
RFHA1004TR7. 25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz. Features. Applications. Ordering Information. Package: Air-Cavity Cu
25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz The is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, military communication radios and general
RF Power Field Effect Transistor LDMOS, MHz, 15W, 26V
RF Power Field Effect Transistor LDMOS, 8 17, 15W, 26V Features Designed for broadband commercial applications up to 1.7GHz High, High Efficiency and High Linearity Typical P1dB performance at 96, 26Vdc,
40W Power Packaged Transistor. GaN HEMT on SiC
Gain (db), Pout (dbm) & PAE (%) Id (A) Description 40W Power Packaged Transistor The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
FP Description. Features. Applications. Packaging Information. 50W, 28V GaN HEMT Die
FP28010060 50W, 28V GaN HEMT Die Description The FP28010060 is a 50W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for X-band operation
GTVA123501FA. Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, MHz. Description. Features. RF Characteristics
g123501fa_gr300-1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 10 1400 MHz Description The is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 10 to 1400 MHz
FP Description. Features. Applications. Packaging Information. 104W, 48V GaN HEMT D
FP48007104 104W, 48V GaN HEMT D Description The FP48007104 is a 104W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
DC35GN-15-Q4 15 Watts 50 Volts Pulsed & CW GaN on SiC Wideband Transistor QFN 4x4 mm
GENERAL DESCRIPTION The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity
CCharacteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR 30 dbc. Output 0.01% CCDF OPAR 7 db
Advance GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 3600 MHz Description The GTRA364002FC is a 400-watt (P SAT ) GaN on SiC high electron mobility transistor (HEMT)
Part Number: IGN2735M250
S-Band Radar Transistor IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the
MAGX PPR. Preliminary Information. 15 W GaN-Si Transistor in Surface Mount Plastic Package DC GHz. Preliminary - Rev. V2P.
Features GaN on Si Depletion Mode Transistor Technology Unmatched, Common-Source Configuration Ideal for CW and Pulsed Applications Operation up to 50 V, Class AB Lead-Free 3 x 6 mm -lead DFN Package Halogen-Free
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-55dB
Product Description Sirenza Microdevices SLD-283CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 27MHz. It is an excellent solution for applications requiring high linearity
SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package
Product Description Sirenza Microdevices SLD-183CZ is a robust 4 Watt high performance LDMOS transistor designed for operation from to 27MHz. It is an excellent solution for applications requiring high
RFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced
700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink
RF3826TR13. 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz. Features. Applications. Ordering Information RF3826
9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose
Features. = +25 C, Vdd= 8V, Idd= 75 ma*
HMC46LC5 Typical Applications v3.11 AMPLIFIER, DC - 2 GHz Features The HMC46LC5 is ideal for: Noise Figure: 2.5 db @ 1 GHz Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation
ST W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz. Datasheet. Features. Applications. Description
Datasheet 10 W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz Features Order code F REQ V DD P OUT (typ.) Gain N D ST16060 930 MHz 28 V 12 W 21 db 63% MM High efficiency and linear gain operations
FP Description. Features. Applications. Packaging Information. 340W, 48V GaN HEMT D
FP48005340 340W, 48V GaN HEMT D Description The FP48005340 is a 340W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
FP Description. Features. Applications. Packaging Information. 260W, 48V GaN HEMT D
FP48005260 260W, 48V GaN HEMT D Description The FP48005260 is a 260W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
Efficiency (%) gtra364002fc_g1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF GaN on SiC HEMT 0 W, 48 V, 30 30 MHz Description The is a 0-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular
Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*
Typical Applications The HMC637LP5(E) wideband PA is ideal for: Features P1dB Output Power: +29 dbm Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional
Gain: 960 MHz Gain: 1030 MHz Gain: 1090 MHz Gain: 1150 MHz Gain: 1215 MHz Eff: 960 MHz Eff: 1030 MHz Eff: 1090 MHz Eff: 1150 MHz Eff: 1215 MHz
g107001efc-gr3 Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 1215 MHz Description The is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz
D1H010DA1 10 W, 6 GHz, GaN HEMT Die
D1H010DA1 10 W, 6 GHz, GaN HEMT Die D1H010DA1 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT). The D1H010DA1, operating at 48 V, offers high efficiency, great gain, easy of
Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 39 ma Operational Voltage
60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = db at 2GHz
HMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description
v.61 Typical Applications The wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: +27.5
TGA3500-SM 2-12 GHz Driver Amplifier
Applications General Purpose QFN 8x8mm 28L Product Features Frequency Range: 2 12 GHz Power: 23 dbm P SAT Gain: 34 db Output TOI: 29 dbm Noise Figure: 3 db Bias: V D = 5 V, I D = 0 ma, V G1 = -0.7 V, V
Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]
![Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]](/thumbs/95/123095816.jpg "Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]")
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: + dbm Gain:
Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
GTRA36282FC Thermally-Enhanced High Power RF GaN on SiC HEMT 28 W, 48 V, 34 36 MHz Description The GTRA36282FC is a 28-watt ( ) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard
BLF6G10LS-135R. 1. Product profile. Power LDMOS transistor. 1.1 General description. 1.2 Features
Rev. 01 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical
>10 W, GaN Power Amplifier, 0.01 GHz to 1.1 GHz HMC1099
9 1 11 12 13 14 1 16 32 GND 31 29 28 27 26 FEATURES High saturated output power (PSAT):. dbm typical High small signal gain: 18. db typical High power added efficiency (PAE): 69% typical Instantaneous
BLF6G10LS Product profile. Power LDMOS transistor. 1.1 General description. 1.2 Features
Rev. 1 18 January 8 Preliminary data sheet 1. Product profile 1.1 General description W LDMOS power transistor for base station applications at frequencies from 8 MHz to 1 MHz. Table 1. Typical performance
RF W GaN WIDEBAND PULSED POWER AMPLIFIER
280W GaN WIDE- BAND PULSED POWER AMPLI- FIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package
Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*
v.7 HMCLH AGC AMPLIFIER, - GHz Typical Applications The HMCLH is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C I Test Instrumentation Fiber Optics Functional Diagram Features
GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
Features. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -67 dbc/hz @ khz Noise Figure: 4.5 db Gain:
Features = +5V. = +25 C, Vdd 1. = Vdd 2
v7.11 HMC1LC3 POWER AMPLIFIER, - GHz Typical Applications The HMC1LC3 is ideal for use as a medium power amplifier for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO
Features. Gain Variation Over Temperature db/ C
HMC-C26 Features Typical Applications The HMC-C26 Wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Gain: 3 db
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, aerospace and defense,
GaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM83WM-BM-R AM83WM-FM-R December 214 REV DESCRIPTION AMCOM s AM83WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the.
RF Power GaN Transistor
Technical Data Document Number: A2G22S190--01S Rev. 0, 09/2018 RF Power GaN Transistor This 36 W RF power GaN transistor is designed for cellular base station applications covering the frequency range