SHF-0186K GHz, 0.5 Watt GaAs HFET

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1 DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits Abstract Sirenza Microdevices SHF-86K is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher power added efficiency and improved linearity. The process has a BV GD =BV GS =-V and an f T = GHz. This application note illustrates several application circuits for key frequency bands in the 8- MHz spectrum. Introduction The application circuits were designed to achieve the optimum combination of PdB and OIP while maintaining flat gain and reasonable return losses. These designs were created to illustrate the general performance capabilities of the device under CW conditions. Users may wish to modify these designs to achieve optimum performance under specific input conditions and system requirements. The circuits contain only surface mountable devices and were designed with automated manufacturing requirements in mind. All recommended components are standard values available from well-known manufacturers. The components specified in the bill of materials (BOM) have known parasitics which in some cases are critical to the circuit s performance. Deviating from the recommended BOM may result in a performance shift due to varying parasitics primarily in the inductors and capacitors. Component placement is also critical to each circuit s performance. Circuit Details SMDI will provide the detailed layout (AutoCad format) to users wishing to use the exact same layout and material shown in the following circuits. The circuits recommended within this application note were designed using the following PCB stackup: SHF-86K. - 6 GHz,. Watt GaAs HFET Product Features 8 dbm PdB Typical 4 dbm Output IP Typical High Drain Efficiency: Up to 46% at Class AB 8 db at 9 MHz (Application circuit) 4. db at 96 MHz (Application circuit) Applications Analog and Digital Wireless System Cellular PCS, CDPD, Wireless Data, Pagers Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items should be implemented to maximize MTTF and RF performance:. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL]. Incorporate a large ground pad area with multiple plated-through vias around the device. [CRITICAL]. Use one-to-three point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as close to the ground tab (pin 4) as possible. [RECOMMENDED] 4. Use ounce copper to improve the PCB s heat spreading capability. [RECOMMENDED]. Thermal transfer paste should be used between the PCB and the mounting plate. [RECOMMENDED] Material: GETEK MLC Core thickness:. Copper cladding: oz both sides Dielectric constant: 4. Dielectric loss tangent:.89 (@ GHz) Customers not wishing to use the exact material and layouts shown in this application note can design their own PCB using the critical transmission line impedances and phase lengths shown in the BOMs and layouts. The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright Sirenza Microdevices, Inc. All worldwide rights reserved. Almanor Ave., Sunnyvale, CA 948 Phone: (8) SMI-MMIC EAN-6 Rev B

2 87-96 MHz Application Circuit (V DS =ma, C) DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits -Vg 8V L IN SHF-86K OUT SIRENZA MICRODEVICES ECB-67 Rev A SHF-86K 94 MHz Eval Bd Note: Vias under device leads may be removed for improved manufacturability without risk of RF performance degradation. Ref,6,9, 7,8,4,, L, Part Number uf TANTALUM, size "A", volt 8 TOKO LL68-series TOKO LL68-series Ref. Z Z Z Z Z6 Z7 Ohms,.6 94 MHz Ohms, 94 MHz Ohms,.8 94 MHz Ohms, 8 94 MHz Ohms, 4 94 MHz Ohms,.4 94 MHz Ohms,.8 94 MHz - Vg 8 V SHF-86K 9 Z L Z Z Z Z6 Z7 Almanor Ave., Sunnyvale, CA 948 Phone: (8) SMI-MMIC EAN-6 Rev B

3 DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits Typical Performance MHz Application Circuit (V DS =ma, C) - 9 PdB, OIP vs Frequency Isolation Isolation PdB PdB dbm/tone OIP Pout,, Ic vs Pin IRL, ORL - ORL - - IRL Pout, 8 Pout 6 4 Ic f=9 MHz 6 9 Pin Ic (ma) - IM vs Tone Level Noise Figure vs Frequency IM (dbc) f=9 MHz, MHz separation Pout / Tone Noise Figure Freq (GHz) PdB OIP S S NF Almanor Ave., Sunnyvale, CA 948 Phone: (8) SMI-MMIC EAN-6 Rev B

4 9-99 MHz Application Circuit (V DS =ma, C) DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits -Vg 8V IN SHF-86K OUT SIRENZA MICRODEVICES ECB-67 Rev A SHF-86K 96 MHz Eval Bd Note: Vias under device leads may be removed for improved manufacturability without risk of RF performance degradation. Ref,9,6, 4,7, 8,, Part Number uf TANTALUM, size "A", volt. 7 TOKO LL68-series. Ref. Z Z Z Z Ohms, MHz Ohms, 7 96 MHz Ohms, MHz Ohms, MHz Ohms,.8 96 MHz 8 V - Vg Z Z Z SHF-86K Z Almanor Ave., Sunnyvale, CA 948 Phone: (8) SMI-MMIC 4 EAN-6 Rev B

5 DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits Typical Performance MHz Application Circuit (V DS =ma, C) PdB, OIP vs Frequency Isolation Isolation PdB PdB dbm/tone OIP IRL, ORL ORL IRL Pout, Pout,, Ic vs Pin 9 Pout 7 Ic f=96 MHz Pin Ic (ma) - IM vs Tone Level Noise Figure vs Frequency IM (dbc) f=96 MHz, MHz separation Pout / Tone Noise Figure Freq (GHz) PdB OIP S S NF Almanor Ave., Sunnyvale, CA 948 Phone: (8) SMI-MMIC EAN-6 Rev B

6 -7 MHz Application Circuit (V DS =ma, C) DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits -Vg 8V IN SHF-86K OUT SIRENZA MICRODEVICES ECB-67 Rev A SHF-86K 4 MHz Eval Bd Note: Vias under device leads may be removed for improved manufacturability without risk of RF performance degradation. Ref Part Number Ref.,6 7,8,4, uf TANTALUM, size "A", volt 7 7 TOKO LL68-series TOKO LL68-series. Z Z Z Z Z6 Ohms, MHz Ohms,. 4 MHz Ohms, 8. 4 MHz Ohms, MHz Ohms,.4 4 MHz Ohms, 6. 4 MHz 8 V - Vg Rbias Z Rbias Z Z SHF-86K Z Z6 Almanor Ave., Sunnyvale, CA 948 Phone: (8) SMI-MMIC 6 EAN-6 Rev B

7 DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits Typical Performance - -7 MHz Application Circuit (V DS =ma, C) PdB, OIP vs Frequency Isolation Isolation PdB 9 PdB dbm/tone OIP IRL, ORL ORL IRL Pout, Pout,, Ic vs Pin Pout f=4 MHz Pin Ic Ic (ma) - IM vs Tone Level Noise Figure vs Frequency IM (dbc) f=4 MHz, MHz separation Pout / Tone Noise Figure Freq (GHz) PdB OIP S S NF Almanor Ave., Sunnyvale, CA 948 Phone: (8) SMI-MMIC 7 EAN-6 Rev B

8 4- MHz Application Circuit (V DS =ma, C) DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits -Vg 8V IN SHF-86K OUT SIRENZA MICRODEVICES ECB-67 Rev A SHF-86K 4 MHz Eval Bd Note: Vias under device leads may be removed for improved manufacturability without risk of RF performance degradation. Ref Part Number Ref.,6 7,8,4, 9,.8.. uf TANTALUM, size "A", volt 9 TOKO LL68-series.7 Z Z Z Z Ohms, MHz Ohms,.4 44 MHz Ohms,. 44 MHz Ohms, MHz Ohms, MHz - Vg 8 V Rbias Z Z Rbias Z SHF-86K Z Almanor Ave., Sunnyvale, CA 948 Phone: (8) SMI-MMIC 8 EAN-6 Rev B

9 DESIGN APPLICATION NOTE --- AN SHF-86K Amplifier Application Circuits Typical Performance - 4- MHz Application Circuit (V DS =ma, C) PdB, OIP vs Frequency Isolation Isolation PdB PdB dbm/tone OIP IRL, ORL - ORL - - IRL Pout, Pout,, Ic vs Pin Pout Pin Ic Ic (ma) - IM vs Tone Level. Noise Figure vs Frequency IM (dbc) Noise Figure Pout / Tone Freq (GHz) PdB OIP S S NF Almanor Ave., Sunnyvale, CA 948 Phone: (8) SMI-MMIC 9 EAN-6 Rev B