NF (db) Symbol Parameters Units Frequency Min. Typ. Max GHz 28.5 S 21 Small Signal Gain 3.5 GHz GHz 1.

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1 Product Description The SGL-6 is a low power, high gain, fully matched LNA designed for.1 - GHz operation. This LNA is designed for low power,.7 to 3.6V battery operation. This amplifer is fully matched and requires only -5 external components to achieve 8.5 gain at GHz and a noise figure of 1.5. This RFIC is fabricated using Silicon Germanium technology. The matte tin finish on Sirenza s lead-free Z package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive /95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Gain () Typical Performance NF Gain Frequency (MHz) NF () SGL-6Z Pb Preliminary 1 - MHz Low Noise Amplifier Silicon Germanium Product Features Lead Free, RoHS Compliant & Green Package High Gain and Low Noise, 8.5 and MHz Low Power Consumption, 3.3V Fully Matched LNA, only -5 external components Operates from.7 to 3.6V Small Package: x QFN High input overdrive capability, +18m Applications High Gain GPS Receivers ISM & WiMAX LNAs RoHS Compliant & Green Package Symbol Parameters Units Frequency Min. Typ. Max GHz 8.5 S 1 Small Signal Gain. GHz GHz GHz 1.5 NF Noise Figure. GHz 3.5 GHz GHz 5.3 P 1 Output Power at 1 Compression m. GHz GHz GHz -13 IIP 3 Input Third Order Intercept Point m. GHz GHz GHz 1.3 IRL Input Return Loss. GHz GHz GHz 9.5 ORL Output Return Loss. GHz GHz. S1 Reverse Isolation.5 - GHz -8 I D Operating Current ma Test Conditions: V CC = 3.3V I D = 1.5mA Typ. IIP 3 Tone Spacing = 1MHz, Pout per tone = -15 m T L = 5 C Z S = Z L = 5 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 5 Sirenza Microdevices, Inc.. All worldwide rights reserved. 33 S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO 81 1 EDS-1519 Rev C

2 SGL-6Z 1- MHz SiGe Low Noise Amplifier Typical RF Performance at Key Operating Frequencies (With Application Circuit) Frequency (MHz) Symbol Parameter Unit S 1 Small Signal Gain IIP 3 Input Third Order Intercept Point m P 1 Output at 1 Compression m S 11 Input Return Loss S Output Return Loss S 1 Reverse Isolation NF Noise Figure Test Conditions: V CC = 3.3V I D = 1.5 ma Typ. IIP 3 Tone Spacing = 1MHz, Pout per tone = -15 m T L = 5 C Z S = Z L = 5 Ohms Reliability & Qualification Information Parameter Rating ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL 1 This product qualification report can be downloaded at Noise Figure vs. Frequency Absolute Maximum Ratings Parameter Max Device Current (I D ) Max Device Voltage (V D ) Max. RF Input Power* (See Note) Max. Junction Temp. (T J ) Operating Temp. Range (T L ) Max. Storage Temp. *Note: Load condition 1, Z L = 5 Ohms Load condition, ZL = 1:1 VSWR Absolute Limit ma V +18 m +15 C - C to +85 C +15 C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D < (T J - T L ) / R TH, j-l T L =T LEAD Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed IIP 3 vs. Frequency 1 8 P1 vs. Frequency -C -1 6 IIP3 (m) C P1 (m) S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO 81 EDS-1519 Rev C

3 SGL-6Z 1- MHz SiGe Low Noise Amplifier Application Circuit Data, V CC = 3.3V, I D = 9mA IM3 (c) C IM3 vs. Frequency Id (ma) DCIV over Temperature -C 1 3 Vd (V) S11 vs. Frequency S11_ S11_-C S11_ S1_ S1_-C S1_ S1 vs. Frequency S1 vs. Frequency S vs. Frequency S1_ S1_-C S1_ S_ S_-C S_ S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO 81 3 EDS-1519 Rev C

4 SGL-6Z 1- MHz SiGe Low Noise Amplifier Application Schematic Vs 1uF 1 pf 1pF RF in 1 SGL-6Z 1pF Epad 68nH 1pF RF out Evaluation Board Layout Bill of Materials C1 C C3 C C5 1x TAJB15KLRH Rohm 1.uF 1x MCH11KK Rohm 1pF 1x MCH185A11JK Rohm 1pF 1x MCH185A11JK Rohm 1pF 1x MCH185A11JK Rohm 1pF + L1 1x LL168-FS56NJ Toko 68nH Connectors x PSF-S1-1mm GigaLane Co. Heat sink EEF-159 PCB QFNx 33 S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO 81 EDS-1519 Rev C

5 SGL-6Z 1- MHz SiGe Low Noise Amplifier Pin # Function Description RF output and bias pin. Bias should be supplied to this pin through an external RF choke. 1 RF OUT/V D (See application circuit) GND Connect to ground per application circuit drawing. 3,5,6,7,8 N/A Not Used RF IN EPAD GND RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the application schematics. Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Vias should be located under the EPAD as shown in the recommended land pattern. Part Number Ordering Information Suggested Pad Layout Part Number Reel Size Devices / Reel SGL-6Z 7" 3 Part Identification Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at for tolerances. 33 S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO 81 5 EDS-1519 Rev C