SGA-2263 SGA-2263Z Pb DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier
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- Eunice Berry
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1 Product escription The SGA- is a high performance SiGe HBT MMIC Amplifier. A arlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 C-blocking capacitors, a bias resistor and an optional F choke are required for operation. The matte tin finish on Sirenza s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is ohs compliant per EU irective /95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Gain () Gain & vs. = GAIN () SGA- SGA-Z Pb C-5, Cascadable SiGe HBT MMIC Amplifier ohs Compliant & Green Package Product Features Now available in Lead Free, ohs Compliant, & Green Packaging High Gain : 1.8 at 195 Cascadable 5 Ohm Operates From Single Supply Low Thermal esistance Package Applications PA river Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless ata, Satellite Symbol G Small Signal Gain P 1 Power at 1 Compression OIP Third Order Intercept Point B andwidth etermined by (>1) Input Units m m F requency M in. T yp NF Noise Figure V evice Operating Voltage V I evice Operating Current ma TH, j-l Thermal esistance (junction to lead) Test Conditions: The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 21 Sirenza Microdevices, Inc.. All worldwide rights reserved. Technology Court, Broomfield, CO 821 Phone: (8) SMI-MMIC 1 C/ W 255 = 5 V I = 2 ma Typ. OIP Tone Spacing = 1, Pout per tone = -1 m = 14 Ohms = 25ºC Z S = Z L = 5 Ohms ES-12 ev E
2 SGA- C-5 Cascadable MMIC Amplifier Typical F Performance at Key Operating Frequencies Frequency Frequency () () Symbol Unit G Small Signal Gain OIP Third Order Intercept Point m P 1 Power at 1 Compression m Input S 12 everse Isolation NF Noise Figure Test Conditions: = 85 V I = 8 2 ma Typ. OIP Tone Spacing = 1, Pout per tone = -1 m m = 9 14 Ohms = 25ºC Z S = Z L = 5 Ohms Noise Figure () Noise Figure vs. Frequency V = 2.2 V, I = 2 ma Absolute Maximum atings evice Current evice Absolute Limit ( I ) 4 ma Voltage ( V ) 4 V F Input Power + m Junction Temp. ( T ) + 15 C J Operating Temp. ange ( T ) -4 C to +85 C L S torage Temp. +15 C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: I V < ( T - T ) /, j-l J L TH OIP vs. Frequency V = 2.2 V, I = 2 ma P 1 vs. Frequency V = 2.2 V, I = 2 ma OIP (m) P1 (m) Technology Court, Broomfield, CO 821 Phone: (8) SMI-MMIC 2 ES-12 ev E
3 SGA- C-5 Cascadable MMIC Amplifier Typical F Performance Over Temperature ( Bias: V = 2.2 V, I = 2 ma (Typ.) ) 24 S 21 S 11-1 S21() 12 S11() C C S 12 S S12() -2 S() C C NOTE: Full S-parameter data available at Technology Court, Broomfield, CO 821 Phone: (8) SMI-MMIC ES-12 ev E
4 A SGA- C-5 Cascadable MMIC Amplifier Basic Application Circuit Application Circuit Element Values F in 1 uf 1 C 1,2 SGA- 4,5 F out eference esignator C Frequency (Mhz) ecommended Bias esistor Values for I =2mA = ( V -V / I S ) Supply Voltage(V ) 5 V V 8 V 1 V S uf 1 C Note: provides C bias stability over temperature. B IAS Mounting Instructions CB 1. Use a large ground pad area near device pins 1, 2, 4, and 5 with many plated through-holes as shown.. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 1 mil thick F-4 board with 1 ounce copper on both sides. Part Identification Marking 5 4 A AZ 1 2 Caution: ES sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Pin # 1, 2, 5 Function F IN 4, GN F OUT/ escription F input pin. This pin requires the use an external C blocking capacitor chosen for the frequency of operation. Part Number Ordering Information of Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. F output and bias pin. C voltage is present on this pin, therefore a C blocking capacitor is necessary for proper operation. Part Number eel Size evices/eel SGA- 7" SGA-Z 7" Technology Court, Broomfield, CO 821 Phone: (8) SMI-MMIC 4 ES-12 ev E
5 SGA- C-5 Cascadable MMIC Amplifier SOT- PCB Pad Layout imensions in inches [millimeters] F OUT F I N SOT- Nominal Package imensions imensions in inches [millimeters] A link to the SOT- package outline drawing with full dimensions and tolerances may be found on the product web page at Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. imensions given for 5 Ohm F I/O lines are for 1 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants.. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 1 mil thick Getek with 1 ounce copper on both sides. Technology Court, Broomfield, CO 821 Phone: (8) SMI-MMIC 5 ES-12 ev E
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Device Features NF = 0.95 db @ 900MHz at RF connectors of Demo board Gain = 20.5 db @ 900 MHz OIP3 = 30.0 dbm @ 1900MHz Output P1 db = 17.5 dbm @ 900MHz 5V/27mA, MTTF > 100 Years, MSL 1, Class 0 Lead-free/RoHS-compliant
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More information3 OIP3 _ measured with two tones at an output of 9dBm per tone separated by 1 MHz.
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More informationPreliminary Datasheet
Device Features This can be operated at Vd of 3.0V N.F = 0.78 db @ 1850MHz at Demo board 31.5 dbm Output IP3 at 0dBm/tone at 1850MHz 15.6 db Gain at 1850MHz 17.7 dbm P1dB at 1850 MHz Lead-free/Green/RoHS
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More informationSurface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking 4 V CC. Note: Package marking provides orientation and identification.
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