Ceramic Packaged GaAs Power phemt DC-10 GHz

Transcription

1 Ceramic Packaged GaAs Power phemt DC- GHz DESCRIPTION AMCOM s is part of the BI series of GaAs phemts. This part has a total gate width of 6mm. The is designed for high power microwave applications, operating up to GHz. The BI series uses a specially designed ceramic package with bent (BI-G) or straight (BI) leads in a drop-in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground, and thermal path. This part is RoHS compliant. FEATURES High Frequency Operation up to GHz High Gain & High Power, P 1dB 4GHz Surface Mountable Bottom ground for Effective Heat Removal RF PERFORMANCE Load 4 GHz, (V ds = 8V, I ds =.9A) Parameters MIN TYP P 1dB * (dbm) 34.. P 1dB - 47% P 3dB * (dbm). 36. P 3dB - 6% Small Signal Gain (db) IP3 (dbm) - 44 * Power typically remains the same as frequency changes. APPLICATIONS Wireless Local Loop Network Cellular Radio Driver Amplifier Repeaters C-Band VSAT Radar ABSOLUTE MAXIMUM RATING Parameters Symbol Rating Drain-Source Voltage (V) V ds Gate-Source Voltage (V) V gs - Drain Current (A) I ds 2.4 Continuous Dissipation At Room Temp. (W) P t 11. Operating Temp. ( o C) T A - to +8 Max. Channel Temp. ( o C) T ch +17 DC PARAMETERS Parameters Conditions MIN TYP MAX Saturation Current I dss (A) V ds =3V, Vgs=V Pinch-off Voltage V p (V) V ds =3V, Ids=2.% Idss Drain to Gate Breakdown Voltage BV gd (V) I dg = 6mA Thermal Resistance ( o C/W) 13

2 MAG (db) SMALL SIGNAL MEASUREMENTS S-parameters for at 8 V,.6 A * measured at Freq(GHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) * S2P file downloadable from the web : MAXIMUM AVAILABLE GAIN (8V,6mA)

3 MAG (db) S-parameters for at 8 V,.9 A * measured at Freq(GHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) * S2P file downloadable from the web : MAXIMUM AVAILABLE GAIN (8V,9mA)

4 IMD3 (dbc) Pout(dBm), Gain(dB) Efficiency % POWER DATA Optimum load test (8V,9mA) Frequency MAG(Γ L ) ANG(Γ L ) Gain* (db) P 1dB (dbm) P 1dB P 3dB (dbm) P 3dB 2 GHz % 37. 9% 3. GHz % % 4 GHz % % 6 GHz % % 8 GHz % % Frequency = 4GHz, Bias = 8V/9mA 4 3 Gain[dB] Pout[dBm] EFF Input power (dbm) Pout (dbm) *Small signal power gain at optimum load.

5 PACKAGE OUTLINE 6 WX (Straight Leads) 6 WX (Bent Leads)

6 MOUNTING INSTRUCTIONS The device may dissipate several watts of power. It is important to provide a good heat sink to dissipate the heat. There are two options of mounting the device, as shown below. The most effective way is to mount the device to a heat sink pedestal (Option 1). We strongly recommend this way for high power device. The other option, which is mounted directly on PCB, is to add sufficient number of plated through via holes to the PCB. The base of the device is soldered to the PCB (Option 2). The via hole wall should be plated by at least 1 oz thick (1. mil) of high thermal conductivity copper to conduct the heat from the top of PCB to the bottom of PCB. Also fill the via holes with solder to help conducting the heat. Option 1 for Straight Leads (Recommended) Option 2 for Bent Leads.2.7 R.16 R. Plated Vias Heat sink pedestal PCB Cutout.24 * All Dimensions are in inch

7 P1dB & P3dB (dbm) Efficiency % Gain & Return losses (db) TEST CIRCUITS A) 1. GHz to 2.2 GHz 8V/9mA Small Signal Gain Input RL Output RL 36 P3dB P1dB 3 34 EFF P3dB EFF P1dB mm_2 GHz mils 4 D1-

8 P1dB & P3dB (dbm) Efficiency % Gain & Return losses (db) B) 3.2 GHz to 3.6 GHz 8V/9mA Small Signal Gain Input RL Output RL 36 3 P3dB P1dB 34 EFF P3dB EFF P1dB mm_3. GHz mils 4 D1-36