GaN/SiC Bare Die Power HEMT DC-15 GHz

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Tyrone Jenkins
5 years ago
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FEATURES High Frequency Operation up to 15GHz Gain=19dB PAE=% P 5dB =46.

1 GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of mm (Eight 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz. It can provide a typically saturated power of 46.1 dbm. This part is RoHS compliant. FEATURES High Frequency Operation up to 15GHz Gain=19dB PAE=% P 5dB =46.1 dbm APPLICATIONS Cellular Radio base stations WLAN, Repeaters C-Band VSAT Radar Test Instrumentation Military TYPICAL RF PERFORMANCE (CW) FREQUENCY 2 (GHz) (GHz) P 5dB (dbm) P 5dB % % Small Signal Gain (db) 19 Load Reflection Coeff (Per 1. *(V ds =28V, I ds = 1.5A) **Bond wires are not included and the reference line is 75 microns from the edge of the bonding pads towards the device. ABSOLUTE MAXIMUM RATING Parameters Symbol Rating Drain-Source Voltage (V) V ds Gate-Source Voltage (V) V gs -6 Drain Current (ma) I ds 00 Continuous Dissipation At Room Temp. (W) P t Operating Temp. ( o C) T A -55 to +85 Max. Channel Temp. ( o C) T ch +0 DC PARAMETERS Parameters Conditions MIN TYP MAX Saturation Current I dss (ma) V ds =V, V gs =0V Pinch-off Voltage V p (V) V ds =V, Ids=2.5% I dss Drain to Gate Breakdown Voltage BV gd (V) I dg = 1 ma/mm Thermal Resistance ( o C/W)

2 SMALL SIGNAL MEASUREMENTS * S-Parameters for. V ds =28V, V gs = -2.V, I ds = 1.5A* Freq(GHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) *Notes: 1) Bond wires are not included and the reference line is 75 microns from the edge of the bonding pads towards the device. 2) S2P file downloadable from the web :

3 Gmax (db) MAXIMUM AVAILABLE GAIN (Gmax) 28V/1.5A POWER DATA (CW) 1) Optimum P SAT tune (V ds =28V, I ds = 1.5A)* Frequency SOURCE Γ LOAD Γ Gain (db) P 1dB (dbm) P 5dB (dbm) P 5dB 2 GHz % 4 GHz % 6 GHz % 8 GHz % GHz % *Notes: 1) Source tuning has effect on P 1dB & small signal gain, and the source points in this table is a compromise between high gain and high P 1dB at that frequency. 2) Bond wires are not included and the reference line is 75 microns from the edge of the bonding pads towards the device. 3) is mm device which consists of eight 1.mm cells in parallel.

4 P5dB (dbm) PAE % Optimum P SAT tune (28V/ 1.5 A) P5dB PAE ) Optimum PAE tune (V ds =28V, I ds = 1.5A)* Frequency SOURCE Γ LOAD Γ Gain (db) P 1dB (dbm) P 5dB (dbm) P 5dB 2 GHz % 4 GHz % 6 GHz % 8 GHz % GHz % *Notes: 1) Source tuning has effect on P 1dB & small signal gain, and the source points in this table is a compromise between high gain and high P 1dB at that frequency. 2) Bond wires are not included and the reference line is 75 microns from the edge of the bonding pads towards the device. 3) is mm device which consists of eight 1.mm cells in parallel.

5 P5dB (dbm) PAE % Optimum PAE tune (28V/ 1.5 A) P5dB PAE CHIP OUTLINE 36 GATES Notes: 1- mm GaN HEMT 2- Chip is 0 µm thick 3- Dimensions in microns 4- Use eutectic bonding Au85Sn15 at 290 C DRAINS

6 R1 C3 R2 R3 R3 P1dB & P5dB (dbm) Efficiency % Gain & Return losses (db) TEST CIRCUIT 28V/mA 2.5GHz Vds=28V Ids=1.5A GHz Vds=28V Ids=1.5A 0 Small signal gain Input RL Output RL P1dB P5dB EFF P1dB EFF P5dB C5 C2 C2 R4 R4 Notes: 1- mils Rogers 43 Material (LoPro) 2- Ckt is for mm 2.5GHz 3- =0pF, C2=00pF, C3=5.6pF, C4=1uF, C5=47pF R1=1ohm, R2=470ohms, R3=22ohms, R4=3ohms 4- All Caps & Resistors are 0603 size

GaN/SiC Bare Die Power HEMT DC-15 GHz

GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of 5mm (Four 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.