Gallium Nitride MMIC Power Amplifier
|
|
- Doreen Lane
- 6 years ago
- Views:
Transcription
1 Gallium Nitride MMIC Power Amplifier AM47TM- AM47SD-2H August 15 Rev 2 DESCRIPTION AMCOM s AM47TM- is an ultra-broadband GaN MMIC power amplifier. It has db gain, and >46dBm output power over the.3 to 4.GHz band. This MMIC is matched to Ohms at the input but un-matched at the output above.5ghz. The chip is also available as a drop-in carrier (AM47SD-2H) for attachment to a metal heat sink. FEATURES APPLICATIONS Ultra wide bandwidth from MHz to 4GHz Saturated output power P5dB > 46dBm High gain, db Input matched to Ohms Software Radio Instrumentation Gain block TYPICAL PERFORMANCE * A) Bias Conditions**: V ds1 = +25V, I dsq1 =.5A, V dd2 = +9V, I ddq2 =.9A) Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 4.GHz Small Signal Gain 16dB db 34dB Gain Ripple ± 2dB ± 5.dB 41dBm 43dBm 2.GHz 41dBm 43dBm 3.5GHz*** 38dBm dbm 45dBm 47dBm 2.GHz 44dBm 46dBm 3.5GHz*** 43dBm 45dBm P5dB 45% P5dB 2.GHz % P5dB 3.5GHz*** 25% Noise Figure IP3 Input Return Loss 1dB 13dB Output Return Loss 5dB Thermal Resistance * Specifications subject to change without notice. ** Results are for 1% duty cycle pulse with 1µsec duration. Gate biases corresponding to above currents are V gs1 =-3.75V, V gs2 =-3.75V, and may vary from lot to lot. *** 3.5GHz data are obtained using broadband matching test circuit with C2=.8pF (see test fixture design) **** Input RF power should not exceed.2w (23dBm). info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879
2 AM47TM- AM47SD-2H August 15, Rev 2 B) Bias Conditions**: V ds1 = +28V, I dq1 =.5A, V dd2 = +28V, I dq2 =.9A (CW) Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 4.GHz Small Signal Gain 18dB 23dB 28dB Gain Ripple ± 3dB ± 6.dB 37.5dBm 39.5dBm 2.GHz 37dBm 39dBm 3.5GHz*** 34dBm 36dBm 38.5dBm.5dBm 2.GHz 38dBm dbm 3.5GHz*** 36dBm 38dBm P5dB 33% P5dB 2.GHz 25% P5dB 3.5GHz*** 14% Noise Figure IP3 Input Return Loss 1dB 12dB Output Return Loss 5dB Thermal Resistance ABSOLUTE MAXIMUM RATING Parameters Symbol Rating First stage drain voltage V ds1 V Second stage drain voltage V dd2 9V Gate source voltage V gs1 & V gs2-6v Drain source current I dq1.6a Drain source current I dq2 1.75A Continuous dissipation at 25ºC P t 1W Channel temperature T ch 175C Operating temperature T op -55C to +85C Storage temperature T sto -55C to +135C Maximum input RF power P in.w info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879
3 AM47TM- AM47SD-2H August 15, Rev 2 SMALL SIGNAL DATA* a) Power Gain at 1% duty cycle pulse b) S-Parameters* * S-Parameters measured using test fixture and under CW class B conditions. Bias is V ds1 =25V, V dd2 =V, I ds1 =ma, I ds2 =ma, V gs1 =-3.75V, V gs2 =-3.75V. Gain is lower for S-parameters due to lower currents and voltage settings to avoid overheating. NOISE DATA () info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879
4 Gain (db) & P1dB (dbm) Efficieny (%) Gain (db) & Psat (dbm) Efficieny (%) AMCOM Communications, Inc. AM47TM- AM47SD-2H August 15, Rev 2 PULSED POWER DATA* A).5 2.5GHz Test Fixture (C2=.pF) B).5 4.GHz Test Fixture (C2=.8pF) P1dB (9V/.9A, 25V/.5A) Psat (9V/.9A, 25V/.5A) 1 S21 1 P1dB EFF Frequency (GHz) 1 S21 1 P1dB EFF Frequency (GHz) * Power measured under 1% pulse duty cycle & 1µsec duration using test fixtures shown in this datasheet. Bias is V ds1 =V, V dd2 =9V, I dsq1 =.5A, I ddq2 =.9A info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879
5 Gain (db) & P1dB (dbm) Efficieny (%) Gain (db) & Psat (dbm) Efficieny (%) AMCOM Communications, Inc. AM47TM- AM47SD-2H August 15, Rev 2 CW POWER DATA** P1dB CW (28V/.9A, 28V/.5A) Psat CW (28V/.9A, 28V/.5A) 1 S21 1 P1dB EFF Frequency (GHz) 1 S21 1 P1dB EFF Frequency (GHz) ** Power measured under CW conditions using test fixtures shown in this datasheet. Bias is V ds1 =28V, V dd2 =28V, I dsq1 =.5A, I ddq2 =.9A (C2=.4pF) info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879
6 AM47TM- AM47SD-2H August 15, Rev 2 CHIP OUTLINE (AM47TM-) Pin Layout Pad No. Function Bias 1 RF in 2 Vgs1-3.5V 3 Vds1 +V 4 Vgs2-3.5V 5 Vgg2 +9V 6 Vdd2 & RF out +9V 7 Vdd2 & RF out +9V 8 Vdd2 & RF out +9V 9 Vdd2 & RF out +9V 1 Vgg2 +9V 11 Vgs2-3.5V 12 Vds1 +V 13 Vgs1-3.5V Gate biases are for reference only and may vary from lot to lot For CW operation all positive voltages are +28V info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879
7 AM47TM- AM47SD-2H August 15, Rev 2 CARRIER OUTLINE (AM47SD-2H) Pin Layout Pin No. Function Bias 1 RF in 2 Vgs1-3.5V 3 Vds1 +V 4 Vgs2-3.5V 5 Vgg2 +9V 6 Vdd2 & RF out +9V 7 Vgg2 +9V 8 Vgs2-3.5V 9 Vds1 +V 1 Vgs2-3.5V Gate biases are for reference only and may vary from lot to lot For CW operation all positive voltages are +28V info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879
8 AM47TM- AM47SD-2H August 15, Rev 2 TEST CIRCUIT for.3 4.GHz Important Notes: 1- The +9V Bias to the output port could be provided via a bias tee or suitable chokes to be soldered on the board. Inductance of choke should be large enough to have high impedance at lowest frequency of operation (nh is adequate). 2- Recommended current biases are ma and ma for the first stage and second stage respectively for CW operation at V and 9V respectively. Gate biases of -3.75V are for reference only. V gs1 &V gs2 could be adjusted to vary the currents going thru the first stage (V ds1 pin) and the second stage (V dd2 pin) respectively. 3- Input RF power should not exceed.w 4- For pulsed operation higher currents could be used as shown in power data in this data sheet. 5- Do not apply V ds1 & V dd2 without proper negative voltages on V gs1 & V gs2. Otherwise MMIC would fail due to excess heat. 6- C2=pF for optimum performance from.5 to 2.5GHz. info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879
Gallium Nitride MMIC Power Amplifier
Gallium Nitride MMIC Power Amplifier August 2015 Rev 4 DESCRIPTION AMCOM s is an ultra-broadband GaN MMIC power amplifier. It has 21dB gain, and >41dBm output power over the 0.03 to 6GHz band. This MMIC
More information50MHz 3.0GHz Gallium Nitride MMIC Power Amplifier
5MHz 3.GHz Gallium Nitride MMIC Power Amplifier AM342WN- AM342WN-SN-R January 219 Rev 1 DESCRIPTION AMCOM s AM342WN- is an ultra-broadband GaN MMIC power amplifier. It has 23dB gain, and >42dBm output
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM83WM-BM-R AM83WM-FM-R March 211 Rev 1 DESCRIPTION AMCOM s AM83WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the.
More informationGallium Nitride MMIC 15W GHz Power Amplifier
Gallium Nitride MMIC 15W 7.75 12.25 GHz Power Amplifier October 18 REV 0 DESCRIPTION AMCOM s AM75141WN-00 Chip is a broadband GaN MMIC power amplifier. It has 28dB gain, and 42 dbm output power over the
More informationGallium Nitride MMIC 15W GHz Power Amplifier
Gallium Nitride MMIC 15W 3.75 8. GHz Power Amplifier AM8041WN-00-R AM8041WN-SN-R November 17 P1 DESCRIPTION AMCOM s AM8041WN-00 Chip is a broadband GaN MMIC power amplifier. It has 33dB gain, and 42 dbm
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM83WM-BM-R AM83WM-FM-R December 214 REV DESCRIPTION AMCOM s AM83WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the.
More informationAM003536WM-BM-R AM003536WM-FM-R
AM0036WM-BM-R AM0036WM-FM-R DESCRIPTION AMCOM s is an ultra broadband GaAs MMIC power amplifier. It has 23 db gain, and 36 dbm output power over the 0.01 to 3.5 GHz band. This MMIC is in a ceramic package
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier September 2011 Preliminary DESCRIPTION AMCOM s (SN-R) is a broadband GaAs MMIC power amplifier. It has 28dB small signal gain, and >41dBm output power over the 8.5 to 10.5GHz
More informationGaAs MMIC Power Amplifier for VSAT & ITU Applications
GaAs MMIC Power Amplifier for VSAT & ITU Applications AM1351642WM-XX-R April 216 Rev 4 DESCRIPTION AMCOM s AM1351642WM--R is a Ku-band GaAs MMIC power amplifier designed for VSAT ground station transmitter
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM14MM-BM-R AM14MM-FM-R Aug 10 Rev 8 DESCRIPTION AMCOM s is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V.
More informationGallium Nitride MMIC 5W DC 10.0 GHz Power Amplifier
Gallium Nitride MMIC W DC. GHz Power Amplifier Oct 17 P2 DESCRIPTION AMCOM s is a broadband GaN MMIC power amplifier. It has 13dB gain, and 37 dbm output power over the DC to GHz band. The is in a ceramic
More informationAM002535MM-BM-R AM002535MM-FM-R
AM002535MM-BM-R AM002535MM-FM-R December 2008 Rev. 1 DESCRIPTION AMCOM s AM002535MM-BM-R is part of the GaAs MMIC power amplifier series. It has 24 db gain, 34 dbm output power over most of the 0.03 to
More informationAM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R
AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R DESCRIPTION AMCOM s is an ultra-broadband GaAs MMIC power amplifier. It has 22 db gain and 36dBm output power over the 0.01 to 3.5 GHz band. This MMIC is
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier December 2012 Rev0 DESCRIPTION AMCOM s AM357037WM is a broadband GaAs MMIC Power Amplifier. It has a nominal CW performance of 26dB small signal gain, and 37dBm (5W) saturated
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier December 2012 Rev0 DESCRIPTION AMCOM s AM357039WM is a broadband GaAs MMIC Power Amplifier. It has a nominal CW performance of 21dB small signal gain, and 38.5dBm (7W) saturated
More informationPCS Base Station High output power, P1dB = 38 dbm. GPS Applications High gain > 20 db. WLAN Repeaters Efficiency > 30%
AM143438WM-BM-R AM143438WM-FM-R DESCRIPTION AMCOM s AM143438WM-BM-R and AM143438WM-FM-R are part of the GaAs HiFET MMIC power amplifier series. These high efficiency MMICs are 2-stage GaAs phemt power
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM153040WM-BM-R AM153040WM-FM-R Aug 2010 Rev 0 DESCRIPTION AMCOM s is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET PHEMT MMIC power amplifier.
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM14344WM-BM-R AM14344WM-FM-R Aug Rev DESCRIPTION AMCOM s is part of the GaAs HiFET MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs phemt power amplifier
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM1327MM-BM-R AM1327MM-FM-R Aug 2010 Rev 2 DESCRIPTION AMCOM s is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM324036WM-BM-R AM324036WM-FM-R Aug 10 Rev 6 DESCRIPTION AMCOM s is part of the GaAs MMIC power amplifier series. It has 29dB gain and 36dBm output power over the 3.2 to 4.0GHz
More informationAM153540WM-BM-R AM153540WM-EM-R AM153540WM-FM-R
AM15354WM-BM-R AM15354WM-EM-R AM15354WM-FM-R November 217 DESCRIPTION AMCOM s AM15354WM-BM-R AM15354WM-EM-R and AM15354WM-FM-R are part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs
More information10W Ultra-Broadband Power Amplifier
(TH1B-01 ) 10W Ultra-Broadband Power Amplifier Amin K. Ezzeddine and Ho. C. Huang AMCOM Communications, Inc 401 Professional Drive, Gaithersburg, MD 20879, USA Tel: 301-353-8400 Email: amin@amcomusa.com
More informationit to 18 GHz, 2-W Amplifier
it218 to 18 GHz, 2-W Amplifier Description Features Absolute Maximum Ratings Electrical Characteristics (at 2 C) -ohm system V DD = 8 V Quiescent current (I DQ = 1.1 A The it218 is a three-stage, high-power
More information2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The is wideband GaAs MMIC
More information2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The CMD29 is wideband GaAs
More informationMMA GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vds=5V Psat: 19.5 dbm @ Gain: 14 db Vdd =3 to 6 V Ids = 13 ma Input and Output Fully Matched to 5 Ω Applications: Communication systems Microwave instrumentations
More informationMMA GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 1 2 3 4 5 32 31 30 29 28 27 26 25 24
More informationMMA R GHz, 0.1W Gain Block Data Sheet October, 2012
Features: Frequency Range: 17 43 GHz P1dB: 18 dbm Psat: 2 dbm Gain: 21 db Vdd =4.5 V (3 V to 5 V) Ids = 25 ma (15mA to 3mA) Input and Output Fully Matched to 5 Ω 2x and 3x Frequency multiplier applications
More informationGaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
More informationCeramic Packaged GaAs Power phemt DC-12 GHz
Ceramic Packaged GaAs Power phemt DC-12 GHz DESCRIPTION AMCOM s is a discrete GaAs phemt that has a total gate width of 1.mm. It is in a ceramic BH package for operating up to 12 GHz. The BH package has
More informationCMD217. Let Performance Drive GHz GaN Power Amplifier
Let Performance Drive Features High Power High linearity Excellent efficiency Small die size Applications Ka-band communications Commercial satellite Military and space Description Functional Block Diagram
More informationDC to 45 GHz MMIC Amplifier
DC to 45 GHz MMIC Amplifier Features 22 dbm Psat (8.5V p-p) Dynamic Gain Control 10 db Gain Low Noise Figure (5 db) Flatness ± 1dB to 40 GHz >18 dbm Pout @ >7 db Gain @ 45 GHz Size: 1640 x 835 µm ECCN
More information1-24 GHz Distributed Driver Amplifier
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Description The CMD197C4 is a wideband GaAs MMIC driver amplifier housed in a leadless
More informationNME6003H GaN TRANSISTOR
Gallium Nitride 28V 25W, RF Power Transistor Description The NME6003H is a 25W, unmatched GaN HEMT, designed for multiple applications with frequencies up to 6GHz. NME6003H There is no guarantee of performance
More informationMMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.14 AMPLIFIER, 18-4 GHz Typical
More informationCMD GHz Low Noise Amplifier. Functional Block Diagram. Features. Description
33- GHz Low Noise Amplifier Features Functional Block Diagram Ultra low noise performance All positive bias Low current consumption Small die size 2 3 Vgg GB RFIN Vdd RFOUT Description The CMD9 is a highly
More informationNPA100-D GHz GaN 20W Power Amplifier. Product Description: Key Features:
Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA6D Watt, MHz - 6 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA6D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
More informationPARAMETER TEST CONDITIONS TYPICAL DATA UNITS Frequency Range 5-18 GHz 6-8 GHz GHz. 18 GHz GHz GHz
FEATURES Wide Band: 5 to GHz NF (ext match): 3.4 db @ 6 GHz 3.0 db @ GHz 3.7 db @ GHz P-1dB: 21 dbm OIP3: 29 dbm Gain: 19 db Bias Condition: VDD = 4.5V IDD = 135 ma 50-Ohm On-chip Matching Unconditionally
More informationMMA GHz 1W Traveling Wave Amplifier Data Sheet
Features: Frequency Range:.1 2 GHz P3dB: +29 dbm Gain: 12.5 db Vdd =12 V Ids =5 ma Input and Output Fully Matched to 5 Ω Applications: Fiber optics communication systems Microwave and wireless communication
More information3 4 ACG1 ACG2. Vgg2 2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance Positive gain slope High output power Low noise figure Small die size 3 4 ACG ACG Vgg RFOUT & Vdd Description RFIN The CMD9 is wideband GaAs
More informationFeatures. = +25 C, Vdd =+28V, Idd = 850 ma [1]
v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Typical Applications The HMC86F is ideal for Test Instrumentation General Communications Radar Functional Diagram Features High Psat: +38. dbm Power Gain at Psat:
More information10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114
9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
More information= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W
CMPA006005D 5 W, 0 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA006005D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
More informationMMA C3 6-22GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vdd=5V P3dB: 19.5 dbm @Vdd=5V Gain: 14 db Vdd =3 to 6 V Ids = 130 ma Input and Output Fully Matched to 50 Ω Applications: Communication systems Microwave
More informationCMD GHz GaN Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Ultra wideband performance Low noise figure High RF power survivablility Low current consumption Small die size Vdd Vgg2 RFOUT Description RFIN The CMD2 is a wideband
More informationMMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012
Features: Frequency Range: 30KHz 40 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 13.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω In 4x4mm QFN package Applications: Fiber optics communication
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA0060002D 2 Watt, MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
More informationInnogration (Suzhou) Co., Ltd.
Gallium Nitride 28V 50W, RF Power Transistor Description The GTAH58050GX is a 50W internally matched, GaN HEMT, designed from 5 to 6GHz, especially point-to-point communication, broadband wireless access,
More informationGaN/SiC Bare Die Power HEMT DC-15 GHz
GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of 5mm (Four 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
More informationPreliminary Datasheet Revision: January 2016
Preliminary Datasheet Revision: January 216 Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios SATCOM Terminals X = 3.65mm Y = 2.3mm Product Features RF frequency: 27 to 31 GHz
More informationCMD GHz GaN Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram High gain Low noise figure High linearity High RF power survivability Small die size Description Vdd The CMD9 is a broadband MMIC GaN low noise amplifier ideally suited
More informationDC to 30GHz Broadband MMIC Low-Noise Amplifier
DC to 30GHz Broadband MMIC Low-Noise Amplifier Features Low noise, ultra-flat gain 6-20GHz: 2.5dB NF, 18 ± 0.3dB gain Excellent 1.5-20GHz performance: Very flat gain (17 ± 0.6dB) High Psat at 20GHz (20dBm)
More informationESD Sensitive Component!!
5 MHz LOW NOISE AMPLIFIER WHM3AE 1 REV E WHM3AE LNA is a low noise figure, wideband, and high linear SMT packaged amplifier with exceptional gain flatness design. The amplifier offers typical.7 db noise
More informationCMD GHz Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Ultra low noise performance High linearity Small die size 2 GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD63 is a high dynamic range GaAs MMIC low noise amplifier ideally
More information5-20GHz MMIC Amplifier with Integrated Bias
5-20GHz MMIC Amplifier with Integrated Bias Features Excellent performance 5-18GHz: High, flat gain (15 ± 0.5dB) Good return loss (15dB) 17.5dBm P1dB, 20dBm Psat Mixed-signal 3.3V operation: Similar small-signal
More information3 4 ACG1 ACG2. 2 Vgg2 RFIN. Parameter Min Typ Max Units. Frequency Range DC - 24 GHz. Gain 18 db. Noise Figure 2.5 db. Output P1dB 25 dbm
Features Ultra wideband performance Positive gain slope High output power Low noise figure Small die size Description The CMD44 is wideband GaAs MMIC distributed amplifier die which operates from DC to
More informationCMD283C GHz Ultra Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Ultra low noise figure High gain broadband performance Low power dissipation Pb-free RoHs compliant 3x3 QFN package Description The CMD283C3 is a broadband MMIC low noise
More informationNPA105-D. Preliminary GHz GaN 40W Power Amplifier. Product Description: Key Features:
Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.
More informationMMA M GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN
More informationMAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.
Features 2 Watt Saturated Output Power Level Variable Drain Voltage (6-V) Operation x mm Lead PQFN Package RoHS Compliant Description The MAAP-67-PKG3 is a 3-stage 2 W power amplifier with on-chip bias
More information6-18 GHz Low Phase Noise Amplifier
-1 GHz Low Phase Noise Amplifier Features Functional Block Diagram Wide bandwidth Low phase noise Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD24C4 is a wideband
More informationFeatures. = +25 C, Vdd = +7V, Idd = 1340 ma [1]
Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Features Saturated
More informationCMD GHz Low Noise Amplifier. Functional Block Diagram. Features. Description
Features Functional Block Diagram Ultra low noise performance Low current consumption Small die size GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD6 is a highly efficient GaAs MMIC low noise amplifier ideally
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-26-931SM The ADM-26-931SM is a broadband, power efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. The ADM-26-931SM is designed to provide optimal LO drive for T3 mixers.
More informationHMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram
v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single
More informationDC to 30GHz Broadband MMIC Low-Power Amplifier
DC to 30GHz Broadband MMIC Low-Power Amplifier Features Very low power dissipation: 4.5V, 85mA (383mW) High drain efficiency (43dBm/W) Good 1.5-20GHz performance: Flat gain (11 ± 0.75dB) 16.5dBm Psat,
More informationMMA GHz, 0.1W Gain Block
Total Size: 172 x 76 Scribe Alley: 7 x 7 MMA-174321 Features: Frequency Range: 17 43 GHz P1dB: 21 dbm Psat: 22 dbm Gain: 22 db Vdd =5 V (3 V to 5 V) Ids = 2 ma (15mA to 3mA) Input and Output Fully Matched
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]
Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High
More informationRF3826TR13. 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz. Features. Applications. Ordering Information RF3826
9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose
More informationFeatures. = +25 C, Vdd = +4V, Idd = 90 ma [2]
v.91 HMCLCB AMPLIFIER, 1-27 GHz Typical Applications This HMCLCB is ideal for: Features Noise Figure: 2.2 db @ 2 GHz Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-26-929SM The ADM-26-929SM is a broadband, efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. It is designed to provide optimal LO drive for T3 mixers and offers 13 db typical
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
The is a broadband, power efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. The is designed to provide optimal LO drive for T3 mixers. Typically, ADM-26-2931SM provides. db
More information5 6.4 GHz 2 Watt Power Amplifier
5 6.4 GHz 2 Watt Power Amplifier Features Frequency Range : 5 6.4GHz 32.5 dbm output P1dB 9 db Power gain 32% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 12 db Dual bias operation No external
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-12-931SM The ADM-12-931SM is a small, low power, and economical T3 driver or T3A pre-amplifier. It is a GaAs PHEMT distributed amplifier in a 3mm QFN surface mount package. The ADM-12-931SM can provide
More information>10 W, GaN Power Amplifier, 0.01 GHz to 1.1 GHz HMC1099
9 1 11 12 13 14 1 16 32 GND 31 29 28 27 26 FEATURES High saturated output power (PSAT):. dbm typical High small signal gain: 18. db typical High power added efficiency (PAE): 69% typical Instantaneous
More informationFeatures. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
More informationCMD GHz Distributed Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Vdd Description RFOUT The CMD97 is a wideband GaAs MMIC driver amplifier ideally suited
More informationHMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications
v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage
More informationBROADBAND DISTRIBUTED AMPLIFIER
ADM-126-83SM The ADM-126-83SM is a broadband, efficient GaAs PHEMT distributed amplifier with an integrated bias tee in a 4mm QFN surface mount package, designed to provide efficient LO drive for T3 mixers.
More informationPRELIMINARY DATASHEET
PRELIMINARY DATASHEET 8-12 GHz 41dBm Power Amplifier DESCRIPTION The is a high performance dual line-up 3 stages GaAs Power Amplifier MMIC designed to operate in the X band. The has an output power of
More information20-43 GHz Double-Balanced Mixer and LO-Amplifier
20-43 GHz Double-Balanced Mixer and LO-Amplifier Features Both Up and Downconverting Functions Harmonic LO Mixing Capability Large Bandwidth: RF Port: 20-43 GHz LO Port Match: DC - 43 GHz LO Amplifier:
More informationAdvance Datasheet Revision: April 2015
APN 1-1 GHz Advance Datasheet Revision: April Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios VSAT Test Instrumentation X = 3 um Y = 3 um Product Features RF frequency: 1
More informationGaN/SiC Bare Die Power HEMT DC-15 GHz
GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of mm (Eight 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
More informationCMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
More informationDC to 30GHz Broadband MMIC Low-Noise Amplifier
DC to 30GHz Broadband MMIC Low-Noise Amplifier Features Great 0.04-30GHz performance: Flat gain (10.25 ± 0.75dB) High Psat at 30GHz (21dBm) High P1dB at 30GHz (18dBm) Excellent input / output return loss
More informationOBSOLETE HMC5846LS6 AMPLIFIERS - LINEAR & POWER - SMT. Electrical Specifications, T A. Features. Typical Applications. General Description
v1.414 Typical Applications The HMC846LS6 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Electrical Specifications, T A = +2 C Vdd = Vdd1,
More informationFeatures. = +25 C, Vdd= 8V, Idd= 75 ma*
HMC46LC5 Typical Applications v3.11 AMPLIFIER, DC - 2 GHz Features The HMC46LC5 is ideal for: Noise Figure: 2.5 db @ 1 GHz Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation
More informationHMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.
v2. Typical Applications The HMC486LP5(E) is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated Power: +33 dbm @ 2% PAE Output IP3:
More information8 11 GHz 1 Watt Power Amplifier
Rev. 1.1 December 2 GHz 1 Watt Power Amplifier Features Frequency Range : GHz 3 dbm output P1dB. db Power gain 3% PAE High IP3 Input Return Loss > db Output Return Loss > db Dual bias operation No external
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.414 Typical Applications The HMC5846LS6
More informationBROADBAND DISTRIBUTED AMPLIFIER
ADM1-26PA The ADM1-26PA is a complete LO driver solution for use with all Marki mixers up to 26. GHz. This single-stage packaged GaAs MMIC distributed amplifier integrates all required biasing circuitry.
More information1.0 6 GHz Ultra Low Noise Amplifier
1.0 6 GHz Ultra Low Noise Amplifier Features Frequency Range: 1.0-6 GHz 0.7 db mid-band Noise Figure 18 db mid band Gain 13dBm Nominal P1dB Bias current : 50mA 0.15-um InGaAs phemt Technology 16-Pin QFN
More informationMMA GHz, 1W MMIC Power Amplifier Data Sheet March, 2012
Features: Frequency Range: 37 40 GHz P1dB: +30.5 dbm IM3 Level: -40 dbc @Po=18dBm/tone Gain: 22 db Vdd = 5V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector Applications:
More informationFeatures: Applications: Description: Absolute Maximum Ratings: (Ta= 25 C)* 28-31GHz 2.5W MMIC Power Amplifier Preliminary Data Sheet
Features: Frequency Range: 28-31 GHz P3dB: +34 dbm IM3 Level: -35 dbc @Po=26dBm/tone Gain: 20 db Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω Integrated Output Power Detector
More informationCeramic Packaged GaAs Power phemt DC-10 GHz
Ceramic Packaged GaAs Power phemt DC- GHz DESCRIPTION AMCOM s is part of the BI series of GaAs phemts. This part has a total gate width of 6mm. The is designed for high power microwave applications, operating
More informationMECGaNLNACX. C- to X-Band GaN HEMT Low Noise Amplifier. Main Features. Product Description. Typical Applications. Measured Data
Main Features Product Description MECGaNLNACX is a 0.25µm GaN HEMT Low Noise Amplifier designed and tested by MEC for C- to X-Band applications. In the frequency range from 5 GHz to 12 GHz MECGaNLNACX
More informationFeatures. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*
Typical Applications The HMC637LP5(E) wideband PA is ideal for: Features P1dB Output Power: +29 dbm Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional
More informationAH102. Product Description. Functional Diagram. Product Features. Typical Parameters. Specifications. Absolute Maximum Ratings. Ordering Information
Medium Power, High Linearity Amplifier The Communications Edge Product Features - MHz Bandwidth +45 dbm Output IP3 13 db Gain +27 dbm P1dB MTBF > 7 Hours Internally Matched Multiple Bias Voltages (+7.
More information