Gallium Nitride MMIC Power Amplifier

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1 Gallium Nitride MMIC Power Amplifier AM47TM- AM47SD-2H August 15 Rev 2 DESCRIPTION AMCOM s AM47TM- is an ultra-broadband GaN MMIC power amplifier. It has db gain, and >46dBm output power over the.3 to 4.GHz band. This MMIC is matched to Ohms at the input but un-matched at the output above.5ghz. The chip is also available as a drop-in carrier (AM47SD-2H) for attachment to a metal heat sink. FEATURES APPLICATIONS Ultra wide bandwidth from MHz to 4GHz Saturated output power P5dB > 46dBm High gain, db Input matched to Ohms Software Radio Instrumentation Gain block TYPICAL PERFORMANCE * A) Bias Conditions**: V ds1 = +25V, I dsq1 =.5A, V dd2 = +9V, I ddq2 =.9A) Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 4.GHz Small Signal Gain 16dB db 34dB Gain Ripple ± 2dB ± 5.dB 41dBm 43dBm 2.GHz 41dBm 43dBm 3.5GHz*** 38dBm dbm 45dBm 47dBm 2.GHz 44dBm 46dBm 3.5GHz*** 43dBm 45dBm P5dB 45% P5dB 2.GHz % P5dB 3.5GHz*** 25% Noise Figure IP3 Input Return Loss 1dB 13dB Output Return Loss 5dB Thermal Resistance * Specifications subject to change without notice. ** Results are for 1% duty cycle pulse with 1µsec duration. Gate biases corresponding to above currents are V gs1 =-3.75V, V gs2 =-3.75V, and may vary from lot to lot. *** 3.5GHz data are obtained using broadband matching test circuit with C2=.8pF (see test fixture design) **** Input RF power should not exceed.2w (23dBm). info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

2 AM47TM- AM47SD-2H August 15, Rev 2 B) Bias Conditions**: V ds1 = +28V, I dq1 =.5A, V dd2 = +28V, I dq2 =.9A (CW) Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 4.GHz Small Signal Gain 18dB 23dB 28dB Gain Ripple ± 3dB ± 6.dB 37.5dBm 39.5dBm 2.GHz 37dBm 39dBm 3.5GHz*** 34dBm 36dBm 38.5dBm.5dBm 2.GHz 38dBm dbm 3.5GHz*** 36dBm 38dBm P5dB 33% P5dB 2.GHz 25% P5dB 3.5GHz*** 14% Noise Figure IP3 Input Return Loss 1dB 12dB Output Return Loss 5dB Thermal Resistance ABSOLUTE MAXIMUM RATING Parameters Symbol Rating First stage drain voltage V ds1 V Second stage drain voltage V dd2 9V Gate source voltage V gs1 & V gs2-6v Drain source current I dq1.6a Drain source current I dq2 1.75A Continuous dissipation at 25ºC P t 1W Channel temperature T ch 175C Operating temperature T op -55C to +85C Storage temperature T sto -55C to +135C Maximum input RF power P in.w info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

3 AM47TM- AM47SD-2H August 15, Rev 2 SMALL SIGNAL DATA* a) Power Gain at 1% duty cycle pulse b) S-Parameters* * S-Parameters measured using test fixture and under CW class B conditions. Bias is V ds1 =25V, V dd2 =V, I ds1 =ma, I ds2 =ma, V gs1 =-3.75V, V gs2 =-3.75V. Gain is lower for S-parameters due to lower currents and voltage settings to avoid overheating. NOISE DATA () info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

4 Gain (db) & P1dB (dbm) Efficieny (%) Gain (db) & Psat (dbm) Efficieny (%) AMCOM Communications, Inc. AM47TM- AM47SD-2H August 15, Rev 2 PULSED POWER DATA* A).5 2.5GHz Test Fixture (C2=.pF) B).5 4.GHz Test Fixture (C2=.8pF) P1dB (9V/.9A, 25V/.5A) Psat (9V/.9A, 25V/.5A) 1 S21 1 P1dB EFF Frequency (GHz) 1 S21 1 P1dB EFF Frequency (GHz) * Power measured under 1% pulse duty cycle & 1µsec duration using test fixtures shown in this datasheet. Bias is V ds1 =V, V dd2 =9V, I dsq1 =.5A, I ddq2 =.9A info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

5 Gain (db) & P1dB (dbm) Efficieny (%) Gain (db) & Psat (dbm) Efficieny (%) AMCOM Communications, Inc. AM47TM- AM47SD-2H August 15, Rev 2 CW POWER DATA** P1dB CW (28V/.9A, 28V/.5A) Psat CW (28V/.9A, 28V/.5A) 1 S21 1 P1dB EFF Frequency (GHz) 1 S21 1 P1dB EFF Frequency (GHz) ** Power measured under CW conditions using test fixtures shown in this datasheet. Bias is V ds1 =28V, V dd2 =28V, I dsq1 =.5A, I ddq2 =.9A (C2=.4pF) info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

6 AM47TM- AM47SD-2H August 15, Rev 2 CHIP OUTLINE (AM47TM-) Pin Layout Pad No. Function Bias 1 RF in 2 Vgs1-3.5V 3 Vds1 +V 4 Vgs2-3.5V 5 Vgg2 +9V 6 Vdd2 & RF out +9V 7 Vdd2 & RF out +9V 8 Vdd2 & RF out +9V 9 Vdd2 & RF out +9V 1 Vgg2 +9V 11 Vgs2-3.5V 12 Vds1 +V 13 Vgs1-3.5V Gate biases are for reference only and may vary from lot to lot For CW operation all positive voltages are +28V info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

7 AM47TM- AM47SD-2H August 15, Rev 2 CARRIER OUTLINE (AM47SD-2H) Pin Layout Pin No. Function Bias 1 RF in 2 Vgs1-3.5V 3 Vds1 +V 4 Vgs2-3.5V 5 Vgg2 +9V 6 Vdd2 & RF out +9V 7 Vgg2 +9V 8 Vgs2-3.5V 9 Vds1 +V 1 Vgs2-3.5V Gate biases are for reference only and may vary from lot to lot For CW operation all positive voltages are +28V info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

8 AM47TM- AM47SD-2H August 15, Rev 2 TEST CIRCUIT for.3 4.GHz Important Notes: 1- The +9V Bias to the output port could be provided via a bias tee or suitable chokes to be soldered on the board. Inductance of choke should be large enough to have high impedance at lowest frequency of operation (nh is adequate). 2- Recommended current biases are ma and ma for the first stage and second stage respectively for CW operation at V and 9V respectively. Gate biases of -3.75V are for reference only. V gs1 &V gs2 could be adjusted to vary the currents going thru the first stage (V ds1 pin) and the second stage (V dd2 pin) respectively. 3- Input RF power should not exceed.w 4- For pulsed operation higher currents could be used as shown in power data in this data sheet. 5- Do not apply V ds1 & V dd2 without proper negative voltages on V gs1 & V gs2. Otherwise MMIC would fail due to excess heat. 6- C2=pF for optimum performance from.5 to 2.5GHz. info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

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