Preliminary Datasheet Revision: January 2016

Transcription

1 Preliminary Datasheet Revision: January 216 Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios SATCOM Terminals X = 3.65mm Y = 2.3mm Product Features RF frequency: 27 to 31 GHz Linear Gain: 2 db typ. Psat: 39 dbm typ. Die Size: 7.41 sq. mm..2um GaN HEMT Process Product Description The monolithic GaN HEMT amplifier is a broadband, two-stage power device, designed for use in SATCOM Terminals and point-to-point digital radios. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Au-based that is compatible with epoxy and eutectic die attach methods. 4 mil SiC substrate DC Power: 28 6 ma Performance Characteristics (Ta = C) Specification Min Typ Max Unit Frequency GHz Linear Gain 2 db Input Return Loss 1 2 db Output Return Loss 5 2 db P1db TBD dbm Psat dbm Psat 3 % Vd1, Vd2 28 V Vg1-3.5 V Vg2-3.5 V Id1 12 ma Id2 48 ma Export Information ECCN: 3A1.b.2.c HTS (Schedule B) code: Absolute Maximum Ratings (Ta = C) Parameter Min Max Unit Vd1,Vd V Id1 12 ma Id2 48 ma Vg1, Vg2-5 V Input drive level TBD dbm Assy. Temperature 3 deg. C (TBD seconds) 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 1

2 Input Return Loss (db) Output Return Loss (db) Gain (db) Pout (dbm), Gain (db), PAE% Preliminary Datasheet Revision: January 216 Measured Performance Characteristics (Typical Performance at C) Vd = 28. V, Id1 = 12mA, Id2 = 48 ma Linear Gain vs. Frequency * Power, Gain, PAE% vs. Frequency * Linear Gain (db) Pin=5 dbm 5 Psat (dbm) PSat Max PAE% Input Return Loss vs. Frequency * Output Return Loss vs. Frequency * * Pulsed-Power On-Wafer, ** CW Fixtured 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 2

3 Pout (dbm) Pout (dbm) Pout (dbm), Gain (db), PAE% Pout (dbm), Gain (db), PAE% Preliminary Datasheet Revision: January 216 Measured Performance Characteristics (Typical Performance at C) Vd = 28. V, Id1 = 12 ma, Id2 = 48 ma Power, Gain, PAE% vs. Frequency Pulsed-Power On-Wafer Power, Gain, PAE% vs. Frequency CW Fixtured Linear Gain (db) Pin=5 dbm 5 Psat (dbm) PSat Max PAE% Linear Gain (db) Pin= dbm 5 P1dB (dbm) Psat (dbm) PSat PAE% Max Output Power vs. Input Power Pulsed-Power On-Wafer Output Power vs. Input Power CW Fixtured GHz 28 GHz 29 GHz 3 GHz 31 GHz 32 GHz GHz 28 GHz 29 GHz 3 GHz 31 GHz 32 GHz 33 GHz Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 3

4 Drain Current (ma) Drain Current (ma) PAE% PAE% Preliminary Datasheet Revision: January 216 Measured Performance Characteristics (Typical Performance at C) Vd = 28. V, Id1 = 12 ma, Id2 = 48 ma PAE% vs. Input Power Pulsed-Power On-Wafer PAE% vs. Input Power CW Fixtured GHz 28 GHz 29 GHz 3 GHz 31 GHz 32 GHz GHz 28 GHz 29 GHz 3 GHz 31 GHz 32 GHz 33 GHz Stage Currents vs. Input Power Pulsed-Power On-Wafer Stage Currents vs. Input Power CW Fixtured Id1 27 GHz Id1 29 GHz Id1 31 GHz Id2 27 GHz Id2 29 GHz Id2 31 GHz Id 128 GHz Id1 3 GHz Id1 32 GHz Id2 28 GHz Id2 3 GHz Id2 32 GHz Id1 27 GHz Id1 29 GHz Id1 31 GHz Id1 33 GHz Id2 28 GHz Id2 3 GHz Id2 32 GHz Id1 28 GHz Id1 3 GHz Id1 32 GHz Id2 27 GHz Id2 29 GHz Id2 31 GHz Id2 33 GHz Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 4

5 Gain (db), Pout (dbm), PAE% AM-PM (Deg/dB), AM-AM (db/db) Gain (db), Pout (dbm), PAE% AM-PM (Deg/dB), AM-AM (db/db) Preliminary Datasheet Revision: January 216 Measured Performance Characteristics (Typical Performance at C) Vd = 28. V, Id1 = 12 ma, Id2 = 48 ma CW Fixtured Gain, Pout. PAE%, AM-AM & AM-PM vs. 29 GHz * CW Fixtured Gain, Pout. PAE%, AM-AM & AM-PM vs. 3 GHz * 5 Gain (db) PAE% AM-AM (db/db) Pout (dbm) AM-PM (Deg/dB) Gain (db) PAE% AM-AM (db/db) Pout (dbm) AM-PM (Deg/dB) Pin (dbm) Pin (dbm) * In un-calibrated fixture with 2-tone input Thermal Properties Preliminary Thermal Properties with die mounted with 1mil 8/2* AuSn Eutectic to mil CuW Shim. Junction Temperature Tj Thermal Resistance θjc Shim Boundary Conditions Temperature Vd = 28V ºC ºC 6.7 ºC/W Id1 + Id1a = ma ** 47 ºC 2. ºC *** 7.2 ºC/W Id2 + Id2a = ma ** 5 ºC.9 ºC 7.2 ºC/W Pin=29.93 dbm (.98 W) Pout=38.53 dbm (7.13 W) * Assumed thermal conductivity of 57 W/m/K ** Vd = 28. V, Idq1 = 12 ma, Id2q = 48 ma *** Max recommended. Reliability testing indicates that MTTF in excess of 1 6 hours can be achieved by ensuring Tj is kept below 2ºC. 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 5

6 Preliminary Datasheet Revision: January 216 Measured Performance Characteristics (Typical Performance at C) Vd = 28. V, Id1 = 12 ma, Id2 = 48 ma * Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S Mag S Ang * Pulsed-Power On-Wafer 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 6

7 VG1 VD1 VG2 VD2 Preliminary Datasheet Revision: January 216 Die Size and Bond Pad Locations (Not to Scale) X = 365 µm µm Y = 23 µm DC Bond Pad = 1 x 1.5 µm RF Bond Pad = 1 x 1.5 µm Chip Thickness = 11 5 µm 761 µm 1161 µm 2161 µm 61 µm 365 µm 23 µm RFIN RFOUT 592 µm 59 µm Biasing/De-Biasing Details: Listed below are some guidelines for GaN device testing and wire bonding: a. Limit positive gate bias (G-S or G-D) to < 1V b. Know your devices breakdown voltages c. Use a power supply with both voltage and current limit. d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to your test fixture. i. Apply negative gate voltage (-5 V) to ensure that all devices are off ii. Ramp up drain bias to ~1 V iii. Gradually increase gate bias voltage while monitoring drain current until 2% of the operating current is achieved iv. Ramp up drain to operating bias v. Gradually increase gate bias voltage while monitoring drain current until the operating current is achieved e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable): i. Gradually decrease drain bias to V. ii. Gradually decrease gate bias to V. iii. Turn off supply voltages f. Repeat de-bias procedure for each amplifier stage 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 7

8 VG1 VD1 VG2 VD2 Preliminary Datasheet Revision: January 216 Suggested Bonding Arrangement =.1uF, 5V (Shunt) [4] =.1uF, V (Shunt) =.1uF, 5V (Shunt) = 1 pf, 5V (Shunt) =.1uF, V (Shunt) = 1 Ohms, 3V (Series) VG1 VD1 [4] VG2 VD2 [4] = 1 pf, V (Shunt) RF Input RF Output Substrate RFIN RFOUT Substrate Recommended Assembly Notes 1. Bypass caps should be 1 pf (approximately) ceramic (single-layer) placed no farther than 3 mils from the amplifier. 2. Best performance obtained from use of <1 mil (long) by 3 by.5 mil ribbons on input and output. 3. Part must be biased from both sides as indicated. 4. The.1uF, 5V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be used, do NOT use the.1uf, 5V Capacitors. Mounting Processes Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum recommended temp during die attach is 32 o C for 3 seconds. Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up tool. CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS. PLEASE ALSO REFER TO OUR GaN Chip Handling Application Note BEFORE HANDLING, ASSEMBLING OR BIASING THESE MMICS! 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 8 Approved for Public Release: Northrop Grumman Case 16-****, 1/**/16