Advance Datasheet Revision: January 2015
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1 Advance Datasheet Revision: January 215 Applications Military SatCom Phased-Array Radar Applications Terminal Amplifiers X = 3.7mm Y = 3.2mm Product Features RF frequency: 43 to 46 GHz Linear Gain: 2 db typ. Psat: 39 dbm typ. Psat: 2% Die Size: < sq. mm..2um GaN HEMT 4 mil substrate DC Power: ma Product Description The monolithic GaN HEMT amplifier is a broadband, two-stage power device, designed for use in Military SatCom and Radar Applications. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression, and thermosonic wire bonding assembly techniques. Performance Characteristics (Ta = 25 C) Specification Min Typ Max Unit Frequency GHz Linear Gain 18 2 db Input Return Loss db Output Return Loss db P1dB 35.5 dbm Psat dbm Psat 2 % Vd1=Vd1a, Vd2=Vd2a 28 V Vg1=Vg1a -4.5 V Vg2=Vg2a -4.5 V Id1+Id1a 336 ma Id2+Id2a 672 ma * Pulsed-Power On-Wafer Absolute Maximum Ratings (Ta = 25 C) Parameter Min Max Unit Vd1=Vg1a, Vd2=Vg2a 2 28 V Id1+Id1a 336 ma Id2+Id1a 672 ma Vg1, Vg1a, Vg2, Vg2a -5 V Input drive level TBD dbm Assy. Temperature 3 deg. C (6 seconds) 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 1
2 Input Return Loss (db) Output Return Loss (db) Gain (db) Pout (dbm), Gain (db), PAE% Advance Datasheet Revision: January 215 Vd = 28. V, Id1+Id1a = 336 ma, Id2+Id2a = 672 ma Linear Gain vs. Frequency Power, Gain, PAE% vs. Frequency ** Gain SS Gain@Pin=dBm 5 P1dB Psat PAE%@Psat Max PAE% Input Return Loss vs. Frequency Output Return Loss vs. Frequency * Pulsed-Power On-Wafer, ** CW Fixtured 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 2
3 Input Return Loss (db) Output Return Loss (db) Gain (db) Pout (dbm), Gain (db), PAE% Advance Datasheet Revision: January 215 Vd = 24. V, Id1+Id1a = 336 ma, Id2+Id2a = 672 ma * Linear Gain vs. Frequency Power, Gain, PAE% vs. Frequency Gain(dB)@Pin=dBm P1dB(dBm) Psat (dbm) PAE%@Psat PAE% Max Input Return Loss vs. Frequency Output Return Loss vs. Frequency * Pulsed-Power On-Wafer 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 3
4 Pout (dbm) Pout (dbm) Pout (dbm), Gain (db), PAE% Pout (dbm), Gain (db), PAE% Advance Datasheet Revision: January 215 Vd = 28. V, Id1+Id1a = 336 ma, Id2+Id2a = 672 ma Power, Gain, PAE% vs. Frequency * Power, Gain, PAE% vs. Frequency ** dBm (db) P1dB (dbm) 5 Psat (dbm) Psat Max PAE% Linear Gain (db) Gain SS Gain@Pin=dBm 5 P1dB Psat PAE%@Psat Max PAE% Output Power vs. Input Power * Output Power vs. Input Power ** GHz 43.5 GHz 44.5 GHz 45.5 GHz 46.5 GHz GHz 42 GHz 43 GHz 44 GHz 45 GHz 46 GHz * Pulse-Power On-Wafer, ** CW Fixtured 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 4
5 Id (ma) Id (ma) Advance Datasheet Revision: January 215 Vd = 28. V, Id1+Id1a = 336 ma, Id2+Id2a = 672 ma Power, Gain, PAE% vs. Frequency * Power, Gain, PAE% vs. Frequency ** Id1_42.5G Id1_44.5G Id1_46.5G Id2_43.5G Id2_45.5G Id1_43.5G Id1_45.5G Id2_42.5G Id2_44.5G Id2_46.5G Id1_41G Id1_43G Id1_45G Id1_47G Id2_42G Id2_44G Id2_46G Id1_42G Id1_44G Id1_46G Id2_41G Id2_43G Id2_45G Id2_47G * Pulse-Power On-Wafer, **CW Fixtured Thermal Properties Preliminary Thermal Properties with die mounted with 1mil 8/2 AuSn Eutectic to 25mil CuW Shim. Junction Temperature Tjc Thermal Resistance θjc Shim Boundary Conditions Temperature Vd = 28V, Id1+Id1a = 368 ma * 25 ºC ºC 4.9 ºC/W Id2 + Id2a = 921 ma * 49.6 ºC 2. ºC ** 5.3 ºC/W Pin=25.95 dbm Pout=39.8 dbm * Vd = 28. V, Idq1+Id1aq = 336 ma, Id2q+Id2aq = 672 ma ** Max recommended. Pre-qualification reliability testing indicates that MTTF in excess of 1 5 hours can be achieved by ensuring Tjc is kept below 2ºC. 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 5
6 Advance Datasheet Revision: January 215 Vd = 28. V, Id1+Id1a = 336 ma, Id2+Id2a = 672 ma * Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang * Pulsed-Power On-Wafer 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 6
7 VG1A VD1A VG2B VD2B VG1 VD1 VG2 VD2 Advance Datasheet Revision: January 215 Die Size and Bond Pad Locations (Not to Scale) 2438µm 1838 µm 1438 µm 138 µm RFIN X = 37 µm 25 µm Y = µm DC Bond Pad = 1 x 1.5 µm RF Bond Pad = 1 x 1.5 µm Chip Thickness = 11 5 µm RFOUT 119 µm 32 µm 138 µm 1438 µm 1838 µm 2438 µm 37 µm Biasing/De-Biasing Details: Bias for 1 st stage is from top. The 2 nd stages must bias up from both sides. Listed below are some guidelines for GaN device testing and wire bonding: a. Limit positive gate bias (G-S or G-D) to < 1V b. Know your devices breakdown voltages c. Use a power supply with both voltage and current limit. d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to your test fixture. i. Apply negative gate voltage (-5 V) to ensure that all devices are off ii. Ramp up drain bias to ~1 V iii. Gradually increase gate bias voltage while monitoring drain current until 2% of the operating current is achieved iv. Ramp up drain to operating bias v. Gradually increase gate bias voltage while monitoring drain current until the operating current is achieved e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable): i. Gradually decrease drain bias to V. ii. Gradually decrease gate bias to V. iii. Turn off supply voltages f. Repeat de-bias procedure for each amplifier stage 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 7 Approved for Public Release: Northrop Grumman Case 13-xxxx, 5/xx/13
8 VG1A VD1A VG2A VD2A VG1 VD1 VG2 VD2 Advance Datasheet Revision: January 215 VD1 VG2 VD2 Suggested Bonding Arrangement [4] [4] =.1uF, 5V (Shunt) [4] VG1 =.1uF, 5V (Shunt) = 1 pf, 5V (Shunt) RF Input RF Output Substrate RFIN RFOUT Substrate VG1A [4] [4] =.1uF, 15V (Shunt) =.1uF, 15V (Shunt) = 1 Ohms, 3V (Series) VD1A VG2A VD2A = 1 pf, 15V (Shunt) Recommended Assembly Notes 1. Bypass caps should be 1 pf (approximately) ceramic (single-layer) placed no farther than 3 mils from the amplifier. 2. Best performance obtained from use of <1 mil (long) by 3 by.5 mil ribbons on input and output. 3. Part must be biased from both sides as indicated. 4. The.1uF, 5V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be used, do NOT use the.1uf, 5V Capacitors. Mounting Processes Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum recommended temp during die attach is 32 o C for 3 seconds. Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up tool. CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS. PLEASE ALSO REFER TO OUR GaN Chip Handling Application Note BEFORE HANDLING, ASSEMBLING OR BIASING THESE MMICS! 214 Northrop Grumman Systems Corporation Phone: (31) Fax: (31) as-mps.sales@ngc.com Page 8 Approved for Public Release: Northrop Grumman Case /7/15
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Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
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GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of mm (Eight 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
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33-47 GHz Wide Band Driver Amplifier Key Features Frequency Range: 33-47 GHz 27.5 dbm Nominal Psat @ 38GHz 27 dbm P1dB @ 38 GHz 36 dbm OTOI @ Pin = 19 dbm/tone 18 db Nominal Gain @ 38GHz db Nominal Return
More informationTGA2509. Wideband 1W HPA with AGC
Product Description The TriQuint TGA2509 is a compact Wideband High Power Amplifier with AGC. The HPA operates from 2-22 GHz and is designed using TriQuint s proven standard 0.25 um gate phemt production
More informationFeatures. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
More informationFeatures. = +25 C, 50 Ohm System
Typical Applications Features This is ideal for: Low Insertion Loss:.5 db Point-to-Point Radios Point-to-Multi-Point Radios Military Radios, Radar & ECM Test Equipment & Sensors Space Functional Diagram
More informationMMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012
Features: Frequency Range: 30KHz 40 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 13.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω In 4x4mm QFN package Applications: Fiber optics communication
More informationFeatures. = +25 C, Vdd = 5V
v3.117 HMC1LH5 Typical Applications The HMC1LH5 is a medium PA for: Telecom Infrastructure Military Radio, Radar & ECM Space Systems Test Instrumentation Functional Diagram Features Gain: 5 db Saturated
More informationMMA GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vds=5V Psat: 19.5 dbm @ Gain: 14 db Vdd =3 to 6 V Ids = 13 ma Input and Output Fully Matched to 5 Ω Applications: Communication systems Microwave instrumentations
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More informationFeatures. = +25 C, Vdd = 5V, Idd = 200 ma*
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v2.211 HMC949 Typical Applications The HMC949 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Features Saturated Output Power: +5.5 dbm
More informationFeatures. = +25 C, Vdd= +5V, Idd = 66mA
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More informationFeatures OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma
v.1111 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram P1dB Output Power: + dbm Psat Output Power: +
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More informationFeatures. = +25 C, Vdd= +5V
Typical Applications This is ideal for: Wideband Communication Systems Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation * VSAT Functional Diagram
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6 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz > 38 dbm Nominal Psat 55% Maximum PAE 15 db Nominal Power Gain Bias: Vd = 28-40 V, Idq = 125 ma, Vg = -3 V Typical Technology:
More informationFeatures. = +25 C, Vdd = +6V, Idd = 375mA [1]
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PRELIMINARY DATASHEET 8-12 GHz 41dBm Power Amplifier DESCRIPTION The is a high performance dual line-up 3 stages GaAs Power Amplifier MMIC designed to operate in the X band. The has an output power of
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v9.917 HMC441 Typical Applications Features The HMC441 is ideal for: Point-to-Point and Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram Gain:.5 db Saturated
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