Gallium Nitride MMIC 15W GHz Power Amplifier

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1 Gallium Nitride MMIC 15W GHz Power Amplifier October 18 REV 0 DESCRIPTION AMCOM s AM75141WN-00 Chip is a broadband GaN MMIC power amplifier. It has 28dB gain, and 42 dbm output power over the 8.25 to GHz band. The AM75141WN-SN-R is in a ceramic package with a flange and straight RF and DC leads for drop-in assembly. It has 27dB gain, and 41dBm output power over the 8.25 to GHz band. Because of high DC power dissipation, good heat sinking is required. The package is RoHS compliant. This MMIC is matched to Ohms. FEATURES Broadband from 7.75 to 12.25GHz Saturated output power Psat is 42dBm High gain, 28dB Input & output matched to Ohms APPLICATIONS Instrumentation Commercial telecom transmission equipment Fixed microwave backhaul TYPICAL PERFORMANCE * (Bare Die) Parameters Minimum Typical ** Maximum Frequency GHz GHz Small Signal Gain 23dB 28dB Gain Ripple ± 2 ± 4.0dB P1dB 35dBm 38 dbm Psat 39 dbm 42 dbm Psat Efficiency 25% Noise Figure IP3 Input Return Loss 15dB Output Return Loss 7dB Thermal Resistance * Specifications subject to change without notice. ** Bias Conditions**: V ds1, 2, 3 = +28V, I dsq1, 2 = 0.65A, I dsq3 = 0.90A, V gs1 = V gs2 = V gs3 =-1.8V. info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

2 AMCOM Communications, Inc. (Packaged) Parameters Minimum Typical ** Maximum Frequency GHz GHz Small Signal Gain 22dB 27dB Gain Ripple ± 2 ± 4.0dB P1dB 34.5 dbm 37.5 dbm Psat 38 dbm 41 dbm Psat Efficiency % Noise Figure IP3 Input Return Loss db Output Return Loss 7dB Thermal Resistance * Specifications subject to change without notice. ** Bias Conditions**: V ds1, 2, 3 = +28V, I dsq1, 2 = 0.65A, I dsq3 = 0.90A, V gs1 = V gs2 = V gs3 =-1.8V. ABSOLUTE MAXIMUM RATING Parameters Symbol Rating First & second stage drain voltages V ds1, V ds2 32V Third stage drain voltage V ds3 32V Gate source voltage V gs1, V gs2, V gs3-6v Drain source current I dsq1 + I dsq2 1A Drain source current I dsq3 1.5A Continuous dissipation at 25ºC P t 80W Channel temperature T ch 0 C Operating temperature T op -55 C to +85 C Storage temperature T sto -55 C to +135 C info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

3 Gain & Return lossess (db) Gain & Return lossess (db) AMCOM Communications, Inc. SMALL SIGNAL DATA* Bare Die GAIN Input RL OUTPUT RL Packaged Gain Input RL Output RL * S-Parameters measured using test fixture. Bias Conditions**: V ds1, 2, 3 = +28V, I dsq1+2 = 0.65A, I dsq3 = 0.90A, V gs1 = V gs2 = V gs3 =-1.8V. info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

4 P1dB (dbm) EFFICIENCY % P5dB (dbm) EFFICIENCY % AMCOM Communications, Inc. POWER DATA (Recommended bias conditions) (Bare Die) 45 28V/6mA/900mA P5dB PAEF V/6mA/900mA P1dB PAEF info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

5 SSG (db) Psat (dbm) PAE % AMCOM Communications, Inc. POWER DATA vs V dd (Bare Die) 45 28V 24V V 28V 24V V V 24V V info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

6 SSG (db) Psat (dbm) PAE % AMCOM Communications, Inc. POWER DATA (Recommended bias conditions) (Packaged) 45 28V 24V V 28V 24V V V 24V V ** Power measured using test fixture. Bias Conditions**: V ds1, 2,3 = +28V, I dsq1+ 2 = 0.65A, I dsq3 = 0.90A, info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

7 AMCOM Communications, Inc. V gs1 = V gs2 = V gs3 =-1.8V. BARE DIE OUTLINE Notes: 1) Chip size is : 00 X 3800 microns. 2) RF bond pads are 1X180 microns, ohm matched and DC blocked. 3) Drains and Gates pads are all 0x0 microns 4) Use eutectic perform for ship assembly info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

8 AMCOM Communications, Inc. PACKAGE OUTLINE Dimensions in inches Pin Layout Pin No. Function Bias 1 Vds2 +28V 2 Vds1 +28V 3 RF in - 4 Vgs1 & Vgs2-1.8V 5 Vds2 +28V 6 Vgs3-1.8V 7 Vds3 +28V 8 RF out - 9 Vds3 +28V Vgs3-1.8V info@amcomusa.com Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

9 AMCOM Communications, Inc. TEST CIRCUIT Chip Version Notes: 1- Use epoxy to mount PCB, and Eutectic soldering to mount chip 2- C1=1uF(Dipped Radial Tantalum),C4=0uF(Aluminum Electrolytic) C2=00pF, C3=pF, R1=ohms, R2=ohms, R3=5ohms 3- All SMT Caps & Resistors are 02 size Important Notes: 1- Recommended current biases are 2mA for first, 4mA for second stage and 900mA for the third stage. Gate biases of 1.8V are for reference only. Gate voltages could be adjusted to vary the currents going thru drain pins. 2- Do not apply drain voltages without proper negative voltages on gates. Otherwise MMIC would fail due to excess heat. 3- Eutectic soldering is recommended for chip mounting 4- AutoCAD DXF file is available Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

10 AMCOM Communications, Inc. Packaged Version Notes: 1- Use epoxy to mount PCB 2- C1=1uF, C2=00pF, R1=ohms, R2=ohms, R3=5ohms 3- All SMT Caps & Resistors are 0603 size 4- Use Test Block No. D Important Notes: 1- Recommended current biases are 6mA for first and second stage combined and 900mA for the third stage. Gate biases of -1.8V are for reference only. Gate voltages could be adjusted to vary the currents going thru drain pins. 2- Do not apply drain voltages without proper negative voltages on gates. Otherwise MMIC would fail due to excess heat. Tel. (1) Fax. (1) Website: 1 Professional Drive, Gaithersburg, MD 879

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