Product Datasheet Revision: April Applications
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- Raymond Harrison
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1 Applications Wide Bandwidth Millimeter-wave Imaging RX Chains Sensors Radar Short Haul / High capacity Links X=34 mm Y=16 mm Product Features RF Frequency: 8 to 1 GHz effective bandwidth: Linear Gain (average from 8 to 1 GHz): 16 db typ. Noise Figure (average from 8 to 1 GHz): 4.5 db max. LNA Option (-A) 5.5 db max. Gain Block: Option (-B) Balanced Input and Output Die Size: < 5.5 sq. mm. DC Power: 2 5 ma Description and Application The ALH495 is a Balanced, three-stage, low noise monolithic HEMT amplifier designed for use in Millimeter-Wave Imaging where broad bandwidth and good return loss are important. The small die size allows for extremely compact packaging. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques. Performance Characteristics (Ta = 25 C) Specification Min Typ Max Unit Frequency 8 1 GHz Linear Gain (Average) db Noise Figure (Average) (-LN) db (-GB) db Input Return Loss 15 db 8-9 Ghz 1 db 9-1 Ghz 8 db Output Return Loss 1 15 db P1dB 3 dbm Vd 2 V Vg3a, Vg3b -.4 V Id 5 ma Ordering Information To Order LNA specify: ALH495 (-A) To Order Gain Block Specify: ALH495 (-B) Absolute Maximum Ratings (Ta = 25 C) Parameter Min Max Unit Vd 3 V Id 62 ma Vg3a, Vg3b V Input drive level -1 dbm Assy. Temperature 3 deg. C (6 seconds) Page 1
2 Input Return Loss (db) Output Return Loss (db) Gain (db) Noise Figure (db) ALH495 Measured Performance Characteristics (Typical Performance at 25 C) Vd = 2V, Id = 5 ma Linear Gain Versus Frequency Noise Figure Versus Frequency Input Return Loss Versus Frequency Output Return Loss Versus Frequency Page 2
3 Measured Performance Characteristics (Typical Performance at 25 C) Vd = 5 V, Id = 5 ma Freq. (GHz) S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang Page 3
4 Die Size and Bond Pad Locations (Not to Scale) X = 34 µm ± 25 µm Y = 16 ± 25 µm RF Bond Pad = 51 x 51 ±.5 µm DC Bond Pad = 81 x 191 ±.5 µm Chip Thickness = 11 ± 5 µm 29 µm 34 µm 365 µm 11 µm VG1 RFIN VG3 RFOUT1 RFOUT2 VD 54 µm 16 µm 16 µm 29 µm Recommended Assembly Notes 1. Bypass caps should be 1 pf (approximately) ceramic (single-layer) placed no farther than 3 mils from the amplifier. 2. Best performance obtained from use of < 6 mil (long) by 1.5 by.5 mil ribbons on input and output. 3. Vg1 is an optional gate bias pad and can be used in place of Vg3. Typical use would be NC. 4. RFOUT1 is not used under standard operation. Page 4
5 Suggested Bonding Arrangement (Not to Scale) =.1uF, 15V (Shunt) = 1 Ohms, 3V (Series) = 1 pf, 15V (Shunt) Vg3 RF Input Substrate VG1 RFIN VG3 RFOUT1 RFOUT2 VD Substrate RF Output Vd Recommended Assembly Notes 1. Bypass caps should be 1 pf (approximately) ceramic (single-layer) placed no farther than 3 mils from the amplifier. 2. Best performance obtained from use of < 6 mil (long) by 1.5 by.5 mil ribbons on input and output. 3. Vg1 is an optional gate bias pad and can be used in place of Vg3. Typical use would be NC. 4. RFOUT1 is not used under standard operation. Page 5 Approved for Public Release: Northrop Grumman Case , 5/11/15
Product Datasheet Revision: January 2015
Applications Short Haul / High Capacity Links Sensors X=23 mm Y=16 mm Product Features RF Frequency: 92 to 96 GHz Linear Gain: 7.5 db typ. Psat: 25 dbm typ. Die Size: 3.7 sq. mm. 2 mil substrate DC Power:
Preliminary Datasheet Revision: July 2014
Applications FCC E-band Communication Systems @ Frequency Band Short Haul / High Capacity Links Enterprise Wireless LAN Wireless Fiber Replacement X=3790 mm Y=2920 mm Product Features RF Frequency: 81
Advance Datasheet Revision: October Applications
APN149 Applications Military SatCom Phased-Array Radar Applications Point-to-Point Radio Point-to-Multipoint Communications Terminal Amplifiers Product Description X = 4.4mm Y = 2.28mm Product Features
Advance Datasheet Revision: January 2015
Advance Datasheet Revision: January 215 Applications Military SatCom Phased-Array Radar Applications Terminal Amplifiers X = 3.7mm Y = 3.2mm Product Features RF frequency: 43 to 46 GHz Linear Gain: 2 db
Advance Datasheet Revision: May 2013
Applications Military SatCom Phased-Array Radar Applications Point-to-Point Radio Point-to-Multipoint Communications Terminal Amplifiers X = 4.4mm Y = 2.28mm Product Features RF frequency: 18 to 23 GHz
Advance Datasheet Revision: April 2015
APN 1-1 GHz Advance Datasheet Revision: April Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios VSAT Test Instrumentation X = 3 um Y = 3 um Product Features RF frequency: 1
Preliminary Datasheet Revision: January 2016
Preliminary Datasheet Revision: January 216 Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios SATCOM Terminals X = 3.65mm Y = 2.3mm Product Features RF frequency: 27 to 31 GHz
GHz Low Noise Amplifier
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8-18 GHz Wideband Low Noise Amplifier
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5 6.4 GHz 2 Watt Power Amplifier
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Features. = +25 C, 50 Ohm System
Typical Applications Features This is ideal for: Low Insertion Loss:.5 db Point-to-Point Radios Point-to-Multi-Point Radios Military Radios, Radar & ECM Test Equipment & Sensors Space Functional Diagram
Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]
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9-10 GHz LOW NOISE AMPLIFIER
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3 4 ACG1 ACG2. Vgg2 2 RFIN. Parameter Min Typ Max Units Frequency Range
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= 25 C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain db
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Features. = +25 C, Vdd= +5V, Idd = 66mA
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TYPICAL APPLICATIONS
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Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
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Features. = +25 C, 50 Ohm System. Return Loss (Input and Output) 5-18 GHz 8 db
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Design Assistance Assembly Assistance Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming Customised Pack Sizes / Qtys Support for all industry recognised
MMA C3 6-22GHz, 0.1W Gain Block Data Sheet
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CHA3093c RoHS COMPLIANT
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GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of 5mm (Four 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
ASL 1005P3 Data Sheet Rev: 1.0 Apr 2017
ASL P3 Rev:. Apr 27.8 4 GHz Frequency Tunable Ultra Low Noise Amplifier Features Frequency Range:.8-4 GHz.7 db typ. NF Tunable Noise match 2 db 4dBm Nominal PdB On-chip DC Blocks -7mA Tunable Bias current.-um
L-Band 6-Bit Digital Phase Shifter. GaAs Monolithic Microwave IC
CHP3010a98F Description L-Band 6- Digital Phase Shifter CHP3010a98F is an L-Band (1.2, 1.4GHz) monolithic 6-bit digital phase-shifter with a 0-360 range and a high phase accuracy. The typical RMS phase
it to 18 GHz, 2-W Amplifier
it218 to 18 GHz, 2-W Amplifier Description Features Absolute Maximum Ratings Electrical Characteristics (at 2 C) -ohm system V DD = 8 V Quiescent current (I DQ = 1.1 A The it218 is a three-stage, high-power