Preliminary Datasheet Revision: July 2014

Transcription

1 Applications FCC E-band Communication Frequency Band Short Haul / High Capacity Links Enterprise Wireless LAN Wireless Fiber Replacement X=3790 mm Y=2920 mm Product Features RF Frequency: 81 to 86 GHz Linear Gain: 14 db typ. Psat: 25.5 dbm typ.. Die Size: sq. mm. 2 mil substrate DC Power: ma Performance Characteristics (Ta = 25 C) Specification Min Typ Max Unit Frequency GHz Linear Gain db Input Return Loss db Output Return Loss db P1dB TBD dbm Psat dbm Psat % Psat (-3) dbm Vd1=Vd1a, Vd2=Vd2a 4 V Vg1=Vg1a V Vg2=Vg2a V Id1+Id1a 270 ma Id2+Id2a 360 ma Product Description The is a Gallium Arsenide-based broadband, three-stage power amplifier device, designed for use in commercial digital radios and wireless LANs. To ensure rugged and reliable operation, GaAs phemt devices are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression, and thermosonic wire bonding assembly techniques. Absolute Maximum Ratings (Ta = 25 C) Parameter Min Max Unit Vd1=Vd1a, Vd2=Vd2a 4 V Vg1=Vg1a V Vg2=Vg2a V Id1+Id1a 270 ma Id2+Id2a 360 ma Input drive level 16 dbm Assy. Temperature 300 deg. C (60 seconds) Phone: (310) Fax: (310) as-mps.sales@ngc.com Page 1

2 Input Return Loss (db) Output Return Loss (db) Gain (db) Psat (dbm), Gain )db), PAE% Measured (On-Wafer) Performance Characteristics (Typical Performance at 25 C) Vd = 4V, Id1+Id1a = 270 ma, Id2+Id2a = 360 ma Linear Gain vs. Frequency Output Power, Gain, PAE% vs. Frequency * Gain SS (db) Psat (dbm) dBm Psat Input Return Loss vs. Frequency Output Return Loss vs. Frequency * Pulsed-Power On-Wafer Phone: (310) Fax: (310) as-mps.sales@ngc.com Page 2

3 Pout (dbm) Measured (On-Wafer) Performance Characteristics (Typical Performance at 25 C) Vd = 4V, Id1+Id1a = 270 ma, Id2+Id2a = 360 ma Pout vs. Pin * Pin (dbm) 78 GHz 79 GHz 80 GHz 81 GHz 82 GHz 83 GHz 84 GHz 85 GHz 86 GHz 87 GHz * Pulsed-Power On-Wafer Phone: (310) Fax: (310) as-mps.sales@ngc.com Page 3

4 Measured (On-Wafer) Performance Characteristics (Typical Performance at 25 C) Vd = 4V, Id1+Id1a = 270 ma, Id2+Id2a = 360 ma Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang Phone: (310) Fax: (310) as-mps.sales@ngc.com Page 4

5 VG1A VD1A VG2A VD2A VG1 VD1 VG2 VD2 Die Size and Bond Pad Locations (Not to Scale) 2604µm 2005 µm 1605 µm 1204 µm RFIN X = 3790 µm 25 µm Y = µm DC Bond Pad = 101 x µm RF Bond Pad = 50 x µm Chip Thickness = 50 5 µm RFOUT 1262 µm 1658 µm 2920 µm 1204 µm 1605 µm 2005 µm 2604µm 3790 µm Phone: (310) Fax: (310) as-mps.sales@ngc.com Page 5 Approved for Public Release: Northrop Grumman Case 13-xxxx, 05/xx/13

6 VG1A VD1A VG2A VD2A VG1 VD1 VG2 VD2 Suggested Bonding Arrangement = 0.1uF, 15V (Shunt) VD1 VG2 = 10 Ohms, 30V (Series) VG1 VD2 = 100 pf, 15V (Shunt) RF Input RF Output Substrate RF IN RFIN RFOUT Substrate VG1A VD2A VD1A VG2A Recommended Assembly Notes 1. Bypass caps should be 100 pf ceramic (single-layer) placed no further than 30 mils from the amplifier. 2. Best performance obtained from use of <6 mil (long) by 1.5 by 0.5 mil ribbons on input and output. Phone: (310) Fax: (310) as-mps.sales@ngc.com Page 6 Approved for Public Release: Northrop Grumman Case , 07/24/14