Advance Datasheet Revision: October Applications

Transcription

1 APN149 Applications Military SatCom Phased-Array Radar Applications Point-to-Point Radio Point-to-Multipoint Communications Terminal Amplifiers Product Description X = 4.4mm Y = 2.28mm Product Features RF frequency: 18 to 23 GHz Linear Gain: 20 db typ. Psat: 38 dbm typ. P3dB > 30 % Die Size: < sq. mm. 0.2um GaN HEMT 4 mil SiC substrate DC Power: ma The APN149 monolithic GaN HEMT amplifier is a broadband, two-stage power device, designed for use in Point-to-Point and Multipoint Digital Radios, Military SatCom and Radar Applications. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Au-based that is compatible with epoxy and eutectic die attach methods. Performance Characteristics (Ta = 25 C) Specification Min Typ Max Unit Frequency GHz Linear Gain db Input Return Loss 2 4 db Output Return Loss 7 10 db P1dB 36 dbm P3dB 38 dbm P3dB 32 % Vd1=Vd2 28 V Vg1-4.5 V Vg2-4.6 V Id1 143 ma Id2 394 ma Absolute Maximum Ratings (Ta = 25 C) Parameter Min Max Unit Vd1, Vd2 TBD V Id1 TBD ma Id2 TBD ma Vg1, Vg2 TBD TBD V Input drive level TBD dbm Assy. Temperature 300 deg. C (60 seconds) Page 1 of 6

2 APN149 Measured Performance Characteristics (Typical Performance at 25 C) Vd = 28.0 V, Id1 = 143 ma, Id2 = 394 ma * Linear Gain vs. Frequency Power vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency * Pulsed-Power On-Wafer Page 2 of 6

3 Pout (dbm), Gain (db) Pout (dbm), Gain (db), PAE% APN149 Measured Performance Characteristics (Typical Performance at 25 C) Power vs. Frequency * Power vs. Frequency ** Gain(dB) 28V 28V Frequency (GHz) Gain SS (db) P1dB (dbm) P3dB (dbm) PAE%@P3dB Frequency (GHz) * Pulsed-Power On-Wafer Vd = 28.0 V, Id1 = 143 ma, Id2 = 394 ma ** CW Fixtured Vd = 28.0 V, Id1 = 144 ma, Id2 = 400 ma Page 3 of 6

4 APN149 Measured Performance Characteristics (Typical Performance at 25 C) Vd = 28.0 V, Id1 = 143 ma, Id2 = 394 ma * Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag * Pulsed-Power On-Wafer Page 4 of 6

5 VG1 VD1 VG2 VD2 APN149 Die Size and Bond Pad Locations 3257µm 2681 µm 2281 µm 1881 µm RFIN X = 4400 µm 25 µm Y = µm DC Bond Pad = 100 x µm RF Bond Pad = 100 x µm Chip Thickness = µm RFOUT 2280 µm 1046 µm 1046 µm 4400 µm Biasing Details: Single sided bias Page 5 of 6

6 VG1 VD1 VG2 VD2 APN149 Suggested Bonding Arrangement VG1 VD1 VG2 VD2 = 0.1uF = 10 Ohms = 100 pf RF Input RF Output Substrate RFIN RFOUT Substrate Recommended Assembly Notes 1. Bypass caps should be 100 pf ceramic (single-layer) placed no further than 30 mils from the amplifier. 2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output. Mounting Processes Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum recommended temp during die attach is 320oC for 30 seconds. Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up tool. CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS. Page 6 of 6 Approved for Public Release: Northrop Grumman Case , 10/25/12