FHX35LG/LP. Super Low Noise HEMT. FEATURES Low Noise Figure: 1.2B High Associated Gain: 10.0dB

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1 FEATURES Low Noise Figure:.B High Associated Gain:.dB Lg ².µm, Wg = µm Gold Gate Metallization for High Reliability Cost Effective Ceramic Microstrip (SMT) Package FHXLG/LP DESCRIPTION The FHXLG/LP is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the -GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(lg) or epoxy-sealed(lp) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature *Note: Mounted on Al O board ( x x.6mm) FHXLG FHXLP FHXLG FHXLP Symbol VDS VGS Pt* Tstg Tch Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:. The drain-source operating voltage (V DS ) should not exceed volts.. The forward and reverse gate currents should not exceed. and -.7 ma respectively with gate resistance of W.. The operating channel temperature (T ch ) should not exceed. Rating to +7-6 to + 7 Unit V V mw ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=) Item Symbol Test Conditions Min. Limit Typ. Max. Unit Saturated Drain Current IDSS VDS = V, VGS = V ma Transconductance gm VDS = V, IDS = ma 6 - ms Pinch-off Voltage Vp VDS = V, IDS = ma V Gate Source Breakdown Voltage VGSO IGS = -µa V Noise Figure NF VDS = V, IDS = ma -..6 db Associated Gain Gas f = GHz.. - db Thermal Resistance Rth Channel to Case - /W AVAILABLE CASE STYLES: LG/LP Note: RF parameters for LG/LP devices are measured on a sample basis as follows: Lot qty. Sample qty. Accept/Reject or less (,) to (,) to (,) or over (,) Edition. July 999

2 FHXLG/LP POWER DERATING CURVE Total Power Dissipation (mw) LP LG Ambient Temperature () Drain Current (ma) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE VGS =V -.V -.V -.6V -.V -.V Drain-Source Voltage (V)

3 FHXLG/LP NF & Gas vs. FREQUENCY NF & Gas vs. IDS Noise Figure (db) IDS=mA Gas NF Associated Gain (db) Noise Figure (db) f=ghz Gas NF 9 7 Associated Gain (db) 6 Frequency (GHz) Drain Current (ma) NF & Gas vs. TEMPERATURE OUTPUT POWER vs. INPUT POWER Noise Figure (db)... f=ghz IDS=mA Gas NF Associated Gain (db) Output Power (dbm) f=ghz IDS=mA - Ambient Temperature ( K) Input Power (dbm)

4 FHXLG/LP TYPICAL NOISE FIGURE CIRCLE +j +j +j +j -j Gopt.... +j -j f = GHz VDS = V IDS = ma Gopt =.6Ð7 Rn/ =. NFmin =.db -j -j NOISE PARAMETERS FHXLG V DS = V, I DS = ma Ga(max) AND S vs. FREQUENCY FHXLG Freq. (GHz) 6 6 Gopt (MAG) (ANG) NFmin (db) Rn/ Gain (db) V DS = V I DS = ma Ga(max) S 6 Frequency (GHz) NOISE PARAMETERS FHXLP V DS = V, I DS = ma Freq. (GHz) Gopt (MAG) (ANG) NFmin (db) Rn/

5 FHXLG/LP +j +j +j S S +9.6 S S +j GHz W GHz. GHz +j. GHz SCALE FOR S.... GHz.GHz SCALE FOR S -j -j GHz GHz -j -j -j -9 S-PARAMETERS FHXLG V DS = V, I DS = ma FREQUENCY S S S S (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

6 FHXLG/LP S-PARAMETERS FHXLP V DS = V, I DS = ma FREQUENCY S S S S (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

7 FHXLG/LP Case Style "LG/LP" Metal-Ceramic Hermetic Package.7±..±. (.9).7±. (.7).±. (.9). (.9).±. (.9).7±. (.7).7±..±. (.9). (.). Max (.). (.) Gold Plated Leads. Gate. Source. Drain. Source Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Zanker Rd. San Jose, CA 9-, U.S.A. Phone: () -9 FAX: () -9 FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 FJ Phone:+ ()6 FAX:+ ()6 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. 99 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI9M 7